Crystalline Recovery after Activation Annealing of Al Implanted 4H-SiC

2008 ◽  
Vol 600-603 ◽  
pp. 585-590
Author(s):  
Ryo Hattori ◽  
Tomokatsu Watanabe ◽  
T. Mitani ◽  
Hiroaki Sumitani ◽  
Tatsuo Oomori
Keyword(s):  
Ion Implantation ◽  
Time Dependence ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Recovery Mechanism ◽  
Poly Type ◽  
Scattering Centers ◽  
Activation Annealing ◽  
Type Recovery

Crystalline recovery mechanism in the activation annealing process of Al implanted 4H-SiC crystals were experimentally investigated. Annealing temperature and annealing time dependence of acceptor activation and activated hole’s behavior were examined. Poly-type recovery from the implantation induced lattice disordering during the annealing was investigated. The existence of meta-stable crystalline states for acceptor activation, and related scattering centers due to annealing is reported To achieve 100% acceptor activation and to reduce strain after ion implantation, annealing at 2000°C for 10 min. was required.

Raman Spectra of Ion Implanted Graphite

1981 ◽  
Vol 7 ◽  
Author(s):  
B.S. Elman ◽  
H. Mazurek ◽  
M.S. Dresselhaus ◽  
G. Dresselhaus
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Raman Spectra ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Lattice Order ◽  
Annealing Temperatures ◽  
High Fluences ◽  
Lattice Damage ◽  
The Way

ABSTRACTRaman spectroscopy is used in a variety of ways to monitor different aspects of the lattice damage caused by ion implantation into graphite. Particular attention is given to the use of Raman spectroscopy to monitor the restoration of lattice order by the annealing process, which depends critically on the annealing temperature and on the extent of the original lattice damage. At low fluences the highly disordered region is localized in the implanted region and relatively low annealing temperatures are required, compared with the implantation at high fluences where the highly disordered region extends all the way to the surface. At high fluences, annealing temperatures comparable to those required for the graphitization of carbons are necessary to fully restore lattice order.

scholarly journals Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

2006 ◽  
Vol 27 (4) ◽  
pp. 205-207 ◽  
Author(s):  
F. Recht ◽  
L. McCarthy ◽  
S. Rajan ◽  
A. Chakraborty ◽  
C. Poblenz ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Gan Hemts ◽  
Activation Annealing

Effect of Homogenization Annealing on Wear Properties of Thixo-Extrued Copper Alloy

2022 ◽  
Vol 327 ◽  
pp. 71-81
Author(s):  
Yun Xin Cui ◽  
Han Xiao ◽  
Chi Xiong ◽  
Rong Feng Zhou ◽  
Zu Lai Li ◽  
...  
Keyword(s):  
Friction Factor ◽  
Annealing Time ◽  
Copper Alloy ◽  
Loss Rate ◽  
Annealing Temperature ◽  
Brinell Hardness ◽  
Annealing Process ◽  
Wear Properties ◽  
Wear Performance ◽  
Semi Solid

The semi-solid extruded CuSn10P1 alloy bushings were homogenization annealed. The effects of annealing process on the hardness and wear properties of bushings were researched. The results show the Brinell hardness increases firstly and then decreases with the increase of annealing temperature and annealing time. With the annealing temperature increasing, the grinding loss rate and friction factor decrease firstly and then increase. At the annealing time of 120 min, the grinding loss rate decreases from 7% at the annealing temperature of 450 °C to 6% at 500 °C, and then increases from 6% at 500 °C to 12% at 600 °C. The friction factor decreases from 0.54 to 0.48 and then increases to 0.83. At the annealing temperature of 500 °C, the grinding loss rate decreases from 11% at the annealing time of 60 min to 6% at 120 min, and then increases to 15% at 150 min. The friction factor decreases from 0.67 to 0.48 and then increases to 0.72. The best wear performance and Brinell hardness can be obtained at annealing temperature of 500 °C for 120 min.

Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing

2009 ◽  
Vol 615-617 ◽  
pp. 477-480 ◽  
Author(s):  
Masahiro Nagano ◽  
Hidekazu Tsuchida ◽  
Takuma Suzuki ◽  
Tetsuo Hatakeyama ◽  
Junji Senzaki ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Basal Plane ◽  
Defect Formation ◽  
Stacking Faults ◽  
Annealing Process ◽  
Extended Defects ◽  
X Ray ◽  
Substrate Interface ◽  
Aluminum Ions ◽  
Activation Annealing

Defect formation during the ion implantation/annealing process in 4H-SiC epilayers is investigated by synchrotron reflection X-ray topography. The 4H-SiC epilayers are subjected to an activation annealing process after Aluminum ions being implanted in the epilayers. The formation modes of extended defects induced by the implantation/annealing process are classified into the migration of preexisting dislocations and the generation of new dislocations/stacking faults. The migration of preexisting basal plane dislocations (BPDs) takes place corresponding to the ion implantation interface or the epilayer/substrate interface. The generation of new dislocations/stacking faults is confirmed as the formation of Shockley faults near the surface of the epilayer and BPD half-loops in the epilayer.

keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon

1994 ◽  
Vol 354 ◽  
Author(s):  
J.K.N. Lindner ◽  
A. Frohnwieser ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Ion Implantation ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Ion Beam ◽  
High Dose ◽  
Layer Formation ◽  
Substrate Orientation ◽  
Ion Beam Synthesis ◽  
Buried Layers ◽  
Precipitate Layer

AbstractHomogenous, epitaxial buried layers of 3C-SÍC have been formed in Si(100) and Si(lll) by ion beam synthesis (IBS) using 180 keV high dose C ion implantation. It is shown that an annealing temperature of 1250 °C and annealing times of 5 to 10 h are sufficient to achieve well-defined Si/SiC/Si layer systems with abrupt interfaces. The influence of dose, annealing time and temperature on the layer formation is studied. The favourable dose is observed to be dependent on the substrate orientation. IBS using 0.8 MeV C ions resulted in a buried SiC precipitate layer of variable composition.

Stress Relaxation of Ion Exchanged Float Aluminosilicate Glass at Different Temperature

2013 ◽  
Vol 650 ◽  
pp. 216-219 ◽  
Author(s):  
Liang Bao Jiang ◽  
Xiao Yu Li ◽  
Xin Tao Guo ◽  
Lei Li ◽  
Guan Li Zhang ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Ion Exchange ◽  
Time Dependence ◽  
Relaxation Rate ◽  
Exponential Function ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Subsequent Treatment ◽  
Aluminosilicate Glass ◽  
Stress Layer

The effect of the annealing temperature (390°C, 410 °Cand 430°C) on the stress relaxation of air side and tin side of ion exchanged glasses was investigated. The annealing time dependence of stress at different temperature can be well fitted by a second order exponential function. The stress relaxation rate on tin side is larger than air side at the ion exchange temperature (410°C) or below (390°C) but smaller above the ion exchange temperature (430°C). The depths of stress layer (DOL) of all ion exchanged glasses increase with the increasing of annealing time and the DOL on air side is always larger than tin side. These provide useful information for subsequent treatment of ion exchanged glasses.

Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC

2008 ◽  
Vol 600-603 ◽  
pp. 611-614 ◽  
Author(s):  
Masahiro Nagano ◽  
Hidekazu Tsuchida ◽  
Takuma Suzuki ◽  
Tetsuo Hatakeyama ◽  
Junji Senzaki ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Defect Formation ◽  
Annealing Process ◽  
Extended Defects ◽  
Nitrogen And Phosphorus ◽  
X Ray ◽  
Transmission Electron ◽  
Before And After ◽  
Activation Annealing ◽  
Shallow Groove

Defect formation during the ion-implantation/annealing process in 4H-SiC epilayers is investigated by X-ray topography, KOH etching analysis and transmission electron microscopy. Nitrogen and phosphorus ions are implanted in the 4H-SiC epilayers and then activation annealing is performed at 1670 °C. Linearly arrayed or clustered extended defects are found to be formed during the implantation/annealing process by comparing X-ray topography images taken before and after the process. It is confirmed that the defect arrays are formed underneath a shallow groove on the surface and consist of a high density of basal-plane Shockley-type stacking faults.

Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process

2010 ◽  
Vol 645-648 ◽  
pp. 323-326 ◽  
Author(s):  
Masahiro Nagano ◽  
Hidekazu Tsuchida ◽  
Takuma Suzuki ◽  
Tetsuo Hatakeyama ◽  
Junji Senzaki ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Defect Formation ◽  
Single Layer ◽  
Annealing Treatment ◽  
Annealing Process ◽  
Extended Defect ◽  
Aluminum Ions ◽  
Transmission Electron ◽  
Activation Annealing ◽  
Nitrogen Phosphorus

Condition dependences of defect formation in 4H-SiC epilayer induced by the implantation/annealing process were investigated using synchrotron reflection X-ray topography and transmission electron microscopy. Nitrogen, phosphorus or aluminum ions were implanted in the 4H-SiC epilayers and then activation annealing was performed. To compare the implantation/annealing process, a sample receiving only the annealing treatment without the implantation was also performed. Two different crucibles (conventional and improved) were used in the annealing process. The formation of single layer Shockley-type stacking faults near the surface was found to have no ion-implantation condition or crucible dependence. The formation of BPD half-loops and the glide of pre-existing BPDs showed clear dependence on the crucibles.

Application of Si-Vapor Ambient Anneal for Post Ion Implantation Anneal and Simultaneous Improvement of Trench Sidewall Smoothness

2018 ◽  
Vol 924 ◽  
pp. 345-348
Author(s):  
Norihito Yabuki ◽  
Satoshi Torimi ◽  
Satoru Nogami ◽  
Makoto Kitabatake ◽  
Tadaaki Kaneko
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Ion Implantation ◽  
Annealing Process ◽  
Tantalum Carbide ◽  
Sidewall Roughness ◽  
Round Shape ◽  
Wafer Thickness ◽  
Activation Annealing ◽  
Sic Wafer

We propose the Si-vapor ambient anneal as a cap-free activation annealing (A/A) method for Silicon Carbide (SiC) using Tantalum Carbide / Tantalum composite materials (TaC/Ta). This method prevents the roughening of SiC surface by controlling the process function without conventional Carbon (C)-cap [1,2]. In this report, we evaluated the warping behavior of SiC wafer to confirm the effect of ion implantation (I/I) temperature (TI/I) and epi-ready treatment using Si-vapor ambient anneal. Wafer warp suppressing effect of high temperature I/I was confirmed and large wafer warpage occurred due to thinning of the wafer thickness. Furthermore we also observed the simultaneous improvement of the sharp edge shape and sidewall roughness of the trench under the appropriate conditions of the Si-vapor ambient anneal. It is possible to shape the round shape of the trench edge and to improve the roughness of trench sidewall by Si-vapor ambient anneal simultaneously with activation annealing process.

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