Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers

2010 ◽  
Vol 645-648 ◽  
pp. 865-868 ◽  
Author(s):  
Ruggero Anzalone ◽  
Massimo Camarda ◽  
Daniel Alquier ◽  
M. Italia ◽  
Andrea Severino ◽  
...  
Keyword(s):  
Experimental Data ◽  
Theoretical Study ◽  
Stress Measurement ◽  
Bulk Material ◽  
Raman Shift ◽  
Silicon Substrates ◽  
Free Standing ◽  
Element Analysis ◽  
Micro Fabrication ◽  
Sic Films

The fabrication of SiC MEMS-based sensors requires new processes able to realize microstructures on either bulk material or on the SiC surface. The hetero-epitaxial growth of 3C-SiC on silicon substrates allows one to overcome the traditional limitations of SiC micro-fabrication. In this work a comparison between single crystal and poly crystal 3C-SiC micro-machined structures will be presented. The free-standing structures realized (cantilevers and membrane) are also a suitable method for residual field stress investigation in 3C-SiC films. Measurement of the Raman shift indicates that the mono and poly-crystal 3C-SiC structures release the stress in different ways. Finite element analysis was performed to determine the stress field inside the films and provided a good fit to the experimental data. A comprehensive experimental and theoretical study of 3C-SiC MEMS structures has been performed and is presented.

Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application

2011 ◽  
Vol 679-680 ◽  
pp. 133-136 ◽  
Author(s):  
Ruggero Anzalone ◽  
Massimo Camarda ◽  
Giuseppe D'Arrigo ◽  
Christopher Locke ◽  
Andrea Canino ◽  
...  
Keyword(s):  
Experimental Data ◽  
Residual Stress ◽  
Bulk Material ◽  
Simulated Data ◽  
Silicon Substrates ◽  
Exponential Approximation ◽  
High Quality ◽  
Micro Fabrication ◽  
High Residual Stress ◽  
Micro Structures

SiC is a candidate material for micro- and nano-electromechanical systems (MEMS and NEMS). The fabrication of SiC MEMS-based sensors requires new processes able to realize microstructures on either bulk material or on the SiC surface. The hetero-epitaxial growth of 3C-SiC on silicon substrates allows one to overcome the traditional limitations of SiC micro-fabrication, but the high residual stress created during the film grow limits the development of the material for these applications. In order to evaluate the amount of residual stress released from the epi-film, different micro-machined structures were developed. Finite elements simulations of the micro-machined structures have also been carried out in order to evaluate, in detail, the stress field inside the structures and to test the analytical model used. With finite element modeling a exponential approximation of the stress relationship was studied, yielding a better fit with the experimental data. This study shows that this new approximation of the total residual stress function reduces the disagreement between experimental and simulated data.

Residual Stress Measurement on Hetero-Epitaxial 3C-SiC Films

2009 ◽  
Vol 615-617 ◽  
pp. 629-632
Author(s):  
Ruggero Anzalone ◽  
Christopher Locke ◽  
Andrea Severino ◽  
Davide Rodilosso ◽  
Cristina Tringali ◽  
...  
Keyword(s):  
Residual Stress ◽  
Stress Measurement ◽  
Bulk Material ◽  
Chemical Vapour ◽  
Silicon Substrates ◽  
New Class ◽  
Carbon Supply ◽  
Silicon Bulk ◽  
Pressure Regime ◽  
Sic Films

The fabrication of SiC MEMS-based sensors requires new processes able to realize microstructures on bulk material or on the SiC surface. The hetero-epitaxial growth of 3C-SiC on silicon substrates allows one to overcome the traditional limitations of SiC micro-fabrication. This approach puts together the standard silicon bulk microfabrication methodologies with the robust mechanical properties of 3C-SiC. Using this approach we were able to fabricate SiC cantilevers for a new class of pressure sensor. In the present research, chemical vapour deposition (CVD) in the low pressure regime of 3C–SiC on silicon substrates was carried out using silane (SiH4), propane (C3 H8) and hydrogen (H2) as the silicon supply, carbon supply and gas carrier, respectively. The resulting bow in the MEMS structures was evaluated optically and the residual stress in the films calculated using the modified stoney equation and determined to be approximately 300 MPa.

Mechanical Proprieties and Residual Stress Evaluation on Heteroepitaxial 3C-SiC/Si for MEMS Application

2012 ◽  
Vol 711 ◽  
pp. 51-54 ◽  
Author(s):  
Ruggero Anzalone ◽  
Giuseppe D'Arrigo ◽  
Massimo Camarda ◽  
Nicolò Piluso ◽  
Andrea Severino ◽  
...  
Keyword(s):  
Residual Stress ◽  
Defect Density ◽  
Strong Relationship ◽  
Raman Shift ◽  
Silicon Substrates ◽  
Resonant Frequencies ◽  
Micro Fabrication ◽  
Stress Evaluation ◽  
Shift Analysis ◽  
High Residual Stress

SiC is a candidate material for micro- and nano-electromechanical systems (MEMS and NEMS). The hetero-epitaxial growth of 3C-SiC on silicon substrates allows one to overcome the traditional limitations of SiC micro-fabrication, but the high residual stress created during the film grow limits the development of the material for these applications. In this work, in order to evaluate the amount of residual stress released from the epi-film, different micro-machined structures were developed. Through the measurement of natural resonant frequencies and Raman shift analysis, a strong relationship between the mechanical proprieties of the material (Young’s modulus) and the film crystal quality (defect density) was observed.

scholarly journals A mesoscopic model for compression of granular materials

2018 ◽  
Vol 183 ◽  
pp. 01054
Author(s):  
Elisha Rejovitzky
Keyword(s):  
Experimental Data ◽  
Wave Propagation ◽  
Granular Materials ◽  
Mechanical Model ◽  
Sound Speed ◽  
Bulk Material ◽  
High Sensitivity ◽  
Water Fraction ◽  
Protective Structures ◽  
Solid Spheres

The design of protective structures often requires numerical modeling of shock-wave propagation in the surrounding soils. Properties of the soil such as grain-grading and water-fraction may vary spatially around a structure and among different sites. To better understand how these properties affect wave propagation we study how the meso-structure of soils affects their equation of state (EOS). In this work we present a meso-mechanical model for granular materials based on a simple representation of the grains as solid spheres. Grain-grading is prescribed, and a packing algorithm is used to obtain periodic grain morphologies of tightly packed randomly distributed spheres. The model is calibrated by using experimental data of sand compaction and sound-speed measurements from the literature. We study the effects of graingrading and show that the pressures at low strains exhibit high sensitivity to the level of connectivity between grains. At high strains, the EOS of the bulk material of the grains dominates the behavior of the EOS of the granular material.

Explanation of the Influence of Inflow Air Content on the Lift of Cavitating Hydrofoils

2018 ◽  
Vol 140 (8) ◽  
Author(s):  
Eduard Amromin
Keyword(s):  
Experimental Data ◽  
Theoretical Study ◽  
Lift Coefficient ◽  
Cavity Surface ◽  
Air Bubbles ◽  
Incoming Flow ◽  
Fluid Density ◽  
Air Content ◽  
Theoretical Results ◽  
Good Agreement

According to several known experiments, an increase of the incoming flow air content can increase the hydrofoil lift coefficient. The presented theoretical study shows that such increase is associated with the decrease of the fluid density at the cavity surface. This decrease is caused by entrainment of air bubbles to the cavity from the surrounding flow. The theoretical results based on such explanation are in a good agreement with the earlier published experimental data for NACA0015.

INVESTIGATION OF BIAXIAL ELASTIC MODULUS AND CTE OF BaTiO3 FILMS

2009 ◽  
Vol 23 (24) ◽  
pp. 4933-4941
Author(s):  
GUI-FANG HUANG ◽  
WEI-QING HUANG ◽  
LING-LING WANG ◽  
ZHONG XIE ◽  
BING-SUO ZOU ◽  
...  
Keyword(s):  
Elastic Modulus ◽  
Thermal Cycle ◽  
Laser Scanning ◽  
Stress Measurement ◽  
Coefficient Of Thermal Expansion ◽  
Bulk Material ◽  
Good Reliability ◽  
Scanning Method ◽  
As Stress

To develop high-quality film device with good reliability, it is often essential to be able to evaluate the parameters such as stress, the biaxial elastic modulus, and coefficient of thermal expansion (CTE) of film. Based on the stress measurement in situ during the thermal cycle by laser scanning method, two techniques were used to measure the biaxial elastic modulus and CTE of BaTiO 3 films deposited on substrate. The value of the biaxial elastic modulus and CTE for BaTiO 3 films determined from two methods is close, in which the biaxial elastic modulus of BaTiO 3 films is higher than that of corresponding bulk while the CTE of BaTiO 3 films is a little smaller than that of bulk material.

Strain in 3C–SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates

2008 ◽  
Vol 600-603 ◽  
pp. 207-210 ◽  
Author(s):  
Marcin Zielinski ◽  
Marc Portail ◽  
Thierry Chassagne ◽  
Yvon Cordier
Keyword(s):  
Gaseous Phase ◽  
Growth Temperature ◽  
Growth Conditions ◽  
Silicon Substrates ◽  
Phase Growth ◽  
Growth Duration ◽  
Strain Control ◽  
Heteroepitaxial Layers ◽  
Oriented Layers ◽  
Sic Films

We discuss the influence of the growth conditions (composition of the gaseous phase, growth duration, growth temperature) and wafer properties (orientation, miscut, thickness) on the residual strain of 3C-SiC films grown on silicon substrates. We show that the strain related effects are observed for both studied orientations however some of them (namely the creep effects) were up to now stated only for (100) oriented layers. We also point out the main difference in strain control between the (111) and (100) orientations.

Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

2006 ◽  
Vol 527-529 ◽  
pp. 299-302
Author(s):  
Hideki Shimizu ◽  
Yosuke Aoyama
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Crystalline Structure ◽  
Flow Rate ◽  
Silicon Substrates ◽  
High Quality ◽  
Sic Films ◽  
Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

Three Approaches for Managing Stiffness in Origami-Inspired Mechanisms

2018 ◽  
Author(s):  
Alden Yellowhorse ◽  
Larry L. Howell
Keyword(s):  
Experimental Data ◽  
Finite Element Analysis ◽  
Finite Element ◽  
Engineering Applications ◽  
Element Analysis ◽  
Advantages And Disadvantages ◽  
Large Size ◽  
Selection For

Ensuring that deployable mechanisms are sufficiently rigid is a major challenge due to their large size relative to their mass. This paper examines three basic types of stiffener that can be applied to light, origami-inspired structures to manage their stiffness. These stiffeners are modeled analytically to enable prediction and optimization of their behavior. The results obtained from this analysis are compared to results from a finite-element analysis and experimental data. After verifying these models, the advantages and disadvantages of each stiffener type are considered. This comparison will facilitate stiffener selection for future engineering applications.

Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates

2005 ◽  
Vol 483-485 ◽  
pp. 209-212
Author(s):  
Hideki Shimizu ◽  
Kensaku Hisada ◽  
Yosuke Aoyama
Keyword(s):  
Epitaxial Growth ◽  
Flow Rate ◽  
Hydrogen Plasma ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Ellipsometric Measurement ◽  
X Ray ◽  
Hydrogen Radicals ◽  
Sic Films ◽  
Reflection Electron Diffraction

Effects of the flow rate of C3H8 passed through hydrogen plasma on deposition rates and^microstructures of 3C-SiC films on Si (100) substrate were investigated by a reflection electron diffraction, an X-ray diffraction and an ellipsometric measurement. The deposition rate of the films increased independently of the flow rate of C3H8 with increasing the flow rate of SiH4. The films grown with increasing the flow rate of C3H8 kept single crystalline structure even at high flow rate of SiH4. Hydrogen radicals generated from C3H8 decomposition by plasma increase with increasing the flow rate of C3H8, and play important rolls to keep epitaxial growth.

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