Preparation and Characterization of Cu2ZnSnSe4 Thin Films by Selenization of Electrodeposited Metal Precursors

2011 ◽  
Vol 685 ◽  
pp. 105-109 ◽  
Author(s):  
Ji Li ◽  
Zhong Wei Zhang ◽  
Yang Ou ◽  
Wei Feng Liu ◽  
Guo Shun Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Dispersive Spectrometry ◽  
Saturated Calomel Electrode ◽  
Elemental Selenium ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Metal Precursors ◽  
Different Temperatures ◽  
Electrodeposited Metal

Cu2ZnSnSe4thin films were prepared by selenization of electrodeposited Cu-Zn-Sn precursors. The Cu-Zn-Sn precursors were electrodeposited on the Mo-coated glass substrates from an electrolyte containing copper sulfate, zinc sulfate, tin (II) sulfate at a fixed potential between -1.2V and -1.25V vs. saturated calomel electrode, then the Cu2ZnSnSe4thin films were obtained by selenizing Cu-Zn-Sn precursors in elemental selenium atmosphere at different temperatures. The structure, composition and optical properties of the films were investigated by X-ray diffraction, Energy dispersive spectrometry and UV-VIS absorption spectroscopy. The CZTSe films have a stannite structure and an optical band-gap about 1.6 eV which is suitable for fabricating solar cells.

LUMINESCENT PROPERTIES OF SOL-GEL DEPOSITED Eu:TiO2 THIN FILMS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 769-773 ◽  
Author(s):  
M. GARCIA-ROCHA ◽  
A. CONDE-GALLARDO ◽  
I. HERNANDEZ-CALDERON ◽  
R. PALOMINO-MERINO
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Glass Substrates ◽  
Corning Glass ◽  
Different Temperatures ◽  
Hecd Laser

In this work we show the results on tile growth and optical characterization of TiO 2 thin films doped with Eu atoms. Eu:TiO2 films were grown at room temperature with different Eu concentrations by sol-gel on Si Corning glass substrates. A different crystalline structure is developed for the films deposited on Corning glass than those deposited on Si as observed from x-ray diffraction experiments. Room and low temperature photoluminescence (PL) was measured by using two different lines (325 and 442 nm) of a HeCd laser. A strong PL signal associated to the 5 D 0→7 F 2 transition from Eu +3 was observed. A better emission was obtained from those films deposited on Si substrates, Finally, the evolution of the PL signal is studied when the samples are annealed at different temperatures in O 2 atmosphere.

scholarly journals Characterization of Electrodeposited Cadmium Selenide Thin Films

2012 ◽  
Vol 60 (1) ◽  
pp. 137-140 ◽  
Author(s):  
RI Chowdhury ◽  
MS Islam ◽  
F Sabeth ◽  
G Mustafa ◽  
SFU Farhad ◽  
...  
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Low Cost ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cdse Film ◽  
Cell Structures ◽  
Deposited Film ◽  
Deposited Films

Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352  Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)

Thermoelectric Characterization of Direct Current Magnetron Co-Sputtering Zinc Antimonide Thin Films

2013 ◽  
Vol 734-737 ◽  
pp. 2559-2562
Author(s):  
Ying Zhen Li ◽  
Ping Fan ◽  
Zhuang Hao Zheng ◽  
Peng Juan Liu ◽  
Qing Yun Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Direct Current ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Zinc Antimonide ◽  
Β Phase ◽  
Bk7 Glass ◽  
Diffraction Peaks

Direct current magnetron co-sputtering was used to deposit zinc antimonide thin films on BK7 glass substrates at room-temperature. Then the films were annealed at 573 K to 673 K for 1 hour in Ar atmosphere. The results indicate that the Seebeck coefficient of the thin films increase from 30.5 μVK-1to 132.5 μVK-1 when the annealing temperature changed. The electrical conductivity of the thin films increases from 3.45×103 to 6.86×103 Sm-1 and the Power Factor is enhanced greatly from 0.03×10-4 to 0.99×10-4 Wm-1K-2 when the annealing temperature reached 598 K. X-ray diffraction result shows that the major diffraction peaks of the thin films match those of β phase Zn4Sb3 and high crystalline thin films are achieved after annealing.

Characterization of MnS Thin Films Deposited by Chemical Bath Deposition

2019 ◽  
Vol 969 ◽  
pp. 433-438 ◽  
Author(s):  
Dattatraya K. Sonavane ◽  
S.K. Jare ◽  
M.A. Shaikh ◽  
R.V. Kathare ◽  
R.N. Bulakhe
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Band Gap Energy ◽  
Sulfur Source ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Double Beam

Glass substrates are used to deposit thin films utilizing basic and value effective chemical bath deposition (CBD) technique. The films were prepared from the mixture as solutions of manganous acetate tetrahydrate [C4H6MnO44H2O] as a manganese source, thiourea [(H2 N) 2 CS] as a sulfur source and triethanolamine (TEA) [(HOC2H4)3N] as a complexing agent.In the present paper the deposition was successfully done at 60 °C temperature. The absorption properties and band gap energy were determined employing double beam spectrophotometer. The optical band gap value calculated from absorption spectra of MnS thin film is found to be about 3.1eV.The MnS thin film was structurally characterized by X-ray Diffraction (XRD). The MnS thin film was morphologically characterized by Scanning Electron Microscopy (SEM) and elemental analysis was performed using EDS to confirm the formation of MnS.

Synthesis and Characterization of Nanocrystalline Ba-doped Mn3O4 Hausmannite Thin Films for Optoelectronic Applications

2021 ◽  
Author(s):  
Aus A. Najim ◽  
Kadhim R. Gbashi ◽  
Ammar T. Salih
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural Characteristics ◽  
Optical Transmittance ◽  
Degree Of Crystallinity ◽  
Chemical Spray Pyrolysis ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
The Impact

In the present work, nanocrystalline hausmannite Mn3O4:Ba thin films have been deposited on glass substrates by chemical spray pyrolysis (CSP). Then, we investigated the impact of Ba doping concentrations on the structural, morphological and optical properties. The structural characteristics were investigated by X-ray diffraction technique and clearly show the films have a spinel Mn3O4 polycrystalline structure, the degree of crystallinity was improved by increasing Ba concentrations in Mn3O4 matrix with crystallite size range of 15–33[Formula: see text]nm. The lattice parameters, the unit cell volume and the (Mn-O) bond length of tetrahedral and octahedral sites, were varied by increasing Ba concentrations. SEM micrographs show that the films are homogeneous with nanoparticles dispersed on the surface with sizes range 30–132[Formula: see text]nm. The optical properties were estimated by UV-Vis-NIR spectrophotometer and exhibited that the optical transmittance and band gap were improved by increasing Ba doping concentration. Empirical equations were suggested to estimate some correlated variables with excellent agreement with the experimental data. The optimum condition was recorded in films doped with 3% of Ba where a better crystallinity, a preferable surface morphology and outstanding optical properties have been achieved.

Electrical Resistivity Improvement by Precipitation and Strain in Al-Cu Thin Films

2010 ◽  
Vol 305-306 ◽  
pp. 33-37 ◽  
Author(s):  
S. Lallouche ◽  
M.Y. Debili
Keyword(s):  
Thin Films ◽  
Copper Content ◽  
Room Temperature ◽  
Structural Features ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Hall Method

This work deals with Al-Cu thin films, deposited onto glass substrates by RF (13.56MHz) magnetron sputtering, and annealed at 773K. The film thickness was approximately the same 3-4µm. They are characterized with respect to microstructure, grain size, microstrain, dislocation density and resistivity versus copper content. Al (Cu) deposits containing 1.8, 7.21, 86.17 and 92.5at%Cu have been investigated. The use of X-ray diffraction analysis and transmission electron microscopy lead to the characterization of different structural features of films deposited at room temperature (< 400K) and after annealing (773K). The resistivity of the films was measured using the four-point probe method. The microstrain profile obtained from XRD thanks to the Williamson-Hall method shows an increase with increasing copper content.

Formation of the high temperature phase in vacuum deposited SnSe thin films

1986 ◽  
Vol 175 (1-2) ◽  
Author(s):  
T. Subba Rao ◽  
B. K. Samantaray ◽  
A. K. Chaudhuri
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Substrate Temperatures ◽  
Low Temperature Phase

AbstractThin films of SnSe vacuum deposited on glass substrates kept at different temperatures have been studied by X-ray diffraction. It is observed that the high temperature phase of SnSe, usually found above 807 K is frozen in along with the low temperature phase when deposited at substrate temperatures of 473 K and above.

Production and characterization of TiO2 nanoparticle thin films for its application in DSSCs

2020 ◽  
Vol 117 (6) ◽  
pp. 622
Author(s):  
Saranyoo Chaiwichian ◽  
Sumneang Lunput
Keyword(s):  
Thin Films ◽  
Dye Sensitized Solar Cells ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Dye Sensitized ◽  
Photovoltaic Efficiency ◽  
Transmission Electron ◽  
Sensitized Solar Cells

In this research, TiO2 nanoparticle thin films were successfully prepared on FTO glass substrates through a doctor blade technique, and its application was tested in dye-sensitized solar cells (DSSCs) with different sensitizing dyes such as methylene blue (MB) and methyl orange (MO). The physicochemical properties of intended thin films were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDX) and UV-vis diffuse reflectance spectra (UV-vis DRS) techniques. The experimental results revealed that dipped TiO2 nanoparticle thin films into MB dye solution showed a higher photovoltaic efficiency (1.45%) when compared with the MO dye solution. A reasonable mechanism of DSSCs was also proposed.

Preparation and Characterization of Tungsten Trioxide (WO3) Thin Films

2013 ◽  
Vol 678 ◽  
pp. 32-36 ◽  
Author(s):  
Raveendran Lavanya ◽  
Gandhimathinathan Saroja ◽  
Veerapandy Vasu
Keyword(s):  
Thin Films ◽  
Electron Beam Evaporation ◽  
Glass Substrates ◽  
Heat Treated ◽  
Electron Beam Evaporation Technique ◽  
Different Temperatures ◽  
Evaporation Technique ◽  
Crystalline Nature ◽  
Wo3 Thin Films

The thin films of WO3were prepared on cleaned microscopic glass substrates by the electron beam evaporation technique. The films were coated at room temperature using pure WO3pellets as source. The prepared films were further post heat treated at different temperatures (100°C to 350°C) for about 1hr in air. The optical properties of WO3 thin films were studied in detail. The increase in the density of the film as the annealing temperature increases have been confirmed by the transmittance spectra. The film annealed at 250°C shows a strong photoluminescence peak. The peak intensity is found to be less for all other temperature. The observed results were discussed in terms of crystalline nature of WO3.

Effects of Annealing on the Properties of Copper Oxide Thin Films

2015 ◽  
Vol 819 ◽  
pp. 189-192
Author(s):  
Dewi Suriyani Che Halin ◽  
Ibrahim Abu Talib ◽  
Abdul Razak Daud ◽  
Muhammad Azmi Abd Hamid
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Spin Coating ◽  
Sol Gel ◽  
Cupric Chloride ◽  
X Ray Diffraction ◽  
Oxide Coatings ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures

Thin films of copper oxide were successively deposited on glass substrates by sol-gel like spin coating for 40 s and annealed in air at different temperatures (200-400°C). Precursor solutions were prepared by dissolving cupric chloride in methanol. Various stabilizers and additives were used to enhance the solubility of cupric chloride and to improve the adhesion between the films and the glass substrates. Glucopone was used as a surfactant to reduce the surface energy. The evolution of oxide coatings under thermal treatment was studied by glancing incidence X-ray diffraction and scanning electron microscopy. Annealing the films in air at 300°C converts the films to CuO. The general appearances of the films were uniform and brownish in color.

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