Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy

2013 ◽  
Vol 740-742 ◽  
pp. 52-55 ◽  
Author(s):  
Thomas Hupfer ◽  
Philip Hens ◽  
Michl Kaiser ◽  
Valdas Jokubavicius ◽  
Mikael Syväjärvi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Theoretical Model ◽  
Mass Transport ◽  
Epitaxial Growth ◽  
Growth Process ◽  
Mean Free Path ◽  
Inert Gas ◽  
Diffusive Growth ◽  
The Mean ◽  
Sublimation Growth

Ballistic and diffusive growth regimes in the Fast Sublimation Growth Process of silicon carbide can be determined using suggested theoretical model for the mean free path calculations. The influences of temperature and inert gas pressure on the mass transport for the growth of epitaxial layers were analyzed theoretically and experimentally.

Growth and Characterization of 2″ 6H-Silicon Carbide

1999 ◽  
Vol 572 ◽  
Author(s):  
Erwin Schmitt ◽  
Robert Eckstein ◽  
Martin Kölbl ◽  
Amd-Dietrich Weber
Keyword(s):  
Silicon Carbide ◽  
Boundary Conditions ◽  
Growth Process ◽  
Defect Density ◽  
Crystal Quality ◽  
Process Conditions ◽  
Thermal Boundary Conditions ◽  
Sublimation Growth ◽  
Defect Densities

ABSTRACTFor the growth of 2″ 6H-SiC a sublimation growth process was developed. By different means of characterization crystal quality was evaluated. Higher defect densities, mainly in the periphery of the crystals were found to be correlated to unfavourable process conditions. Improvement of thermal boundary conditions lead to a decreased defect density and better homogeneity over the wafer area.

Thermodynamic Heat Transfer and Mass Transport Modeling of the Sublimation Growth of Silicon Carbide Crystals

1996 ◽  
Vol 143 (11) ◽  
pp. 3727-3735 ◽  
Author(s):  
M. Pons ◽  
E. Blanquet ◽  
J. M. Dedulle ◽  
I. Garcon ◽  
R. Madar ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Silicon Carbide ◽  
Mass Transport ◽  
Transport Modeling ◽  
Mass Transport Modeling ◽  
Sublimation Growth

Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

1996 ◽  
Vol 423 ◽  
Author(s):  
R. Eckstein ◽  
D. Hofmann ◽  
Y. Makarov ◽  
St. G. Müller ◽  
G. Pensl ◽  
...  
Keyword(s):  
Mass Transfer ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Growth Process ◽  
Numerical Models ◽  
Chemical Processes ◽  
Bulk Crystals ◽  
Electrical And Optical Properties ◽  
Bulk Growth ◽  
Sublimation Growth

AbstractExperimental and numerical analysis have been performed on the sublimation growth process of SiC bulk crystals. Crystallographic, electrical and optical properties of the grown silicon carbide (SIC) crystals have been evaluated by various characterization techniques. Numerical models for the global simulation of SiC bulk growth including heat and mass transfer and chemical processes are applied and experimentally verified.

Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVT

2014 ◽  
Vol 778-780 ◽  
pp. 31-34 ◽  
Author(s):  
Kanaparin Ariyawong ◽  
Nikolaos Tsavdaris ◽  
Jean Marc Dedulle ◽  
Eirini Sarigiannidou ◽  
Thierry Ouisse ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carbon Source ◽  
Single Crystal ◽  
Growth Process ◽  
Graphite Crucible ◽  
Vapor Species ◽  
Sublimation Growth ◽  
Graphite Part ◽  
Additional Carbon Source ◽  
Good Agreement

Graphite crucible in seeded sublimation growth of Silicon Carbide (SiC) single crystal does not only act as a container but also as an additional carbon source. The modeling of the growth process integrated with the etching phenomenon caused by the interaction between vapor species and the graphite crucible is shown to be able to predict the shape of the crystal front during the growth. The additional fluxes produced at the graphite part are delivered to the growing crystal mainly at the crystal periphery. The results obtained from the modeling are in good agreement with the experimental ones.

150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD

2017 ◽  
Vol 897 ◽  
pp. 43-46 ◽  
Author(s):  
Kazukuni Hara ◽  
Hiroaki Fujibayashi ◽  
Yuuichi Takeuchi ◽  
Shoichiro Omae
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Epitaxial Growth ◽  
High Speed ◽  
Growth Process ◽  
High Growth ◽  
High Growth Rate ◽  
High Speed Rotation ◽  
Speed Rotation ◽  
Growth Technology

In this work, we have developed a selective embedded epitaxial growth process on 150-mm-diameter wafer by vertical type hot wall CVD reactor with the aim to realize the all-epitaxial 4H-SiC MOSFETs [1, 2, 3, 4, 5]. We found that at elevated temperature and adding HCl, the epitaxial growth rate at the bottom of trench is greatly enhanced compare to growth on the mesa top. And we obtain high growth rate 7.6μm/h at trench bottom on 150mm-diameter-wafer uniformly with high speed rotation (1000rpm).

Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates

2013 ◽  
Vol 740-742 ◽  
pp. 19-22 ◽  
Author(s):  
Valdas Jokubavicius ◽  
Michl Kaiser ◽  
Philip Hens ◽  
Peter J. Wellmann ◽  
Rickard Liljedahl ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Vapor Phase ◽  
Growth Process ◽  
Room Temperature ◽  
Tantalum Foil ◽  
Photoluminescence Intensity ◽  
Room Temperature Photoluminescence ◽  
Optical Stability ◽  
Morphological Instabilities ◽  
Sublimation Growth

Fluorescent silicon carbide was grown using the fast sublimation growth process on low off-axis 6H-SiC substrates. In this case, the morphology of the epilayer and the incorporation of dopants are influenced by the Si/C ratio. Differently converted tantalum foils were introduced into the growth cell in order to change vapor phase stochiometry during the growth. Fluorescent SiC grown using fresh and fully converted tantalum foils contained morphological instabilities leading to lower room temperature photoluminescence intensity while an improved morphology and optical stability was achieved with partly converted tantalum foil. This work reflects the importance of considering the use of Ta foil in sublimation epitaxy regarding the morphological and optical stability in fluorescent silicon carbide.

scholarly journals Behavior of Viscous Liquid Byproduct Formed in Exhaust Tube by Silicon Carbide Epitaxial Growth

2019 ◽  
Vol 8 (12) ◽  
pp. P805-P810
Author(s):  
Ichiro Mizushima ◽  
Hitoshi Habuka
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth ◽  
Viscous Liquid ◽  
Growth Process ◽  
Room Temperature ◽  
Product Layer ◽  
Layer Formation ◽  
Low Concentrations ◽  
Related Compounds ◽  
By Products

The behavior of the by-product produced in an exhaust tube by the semiconductor silicon carbide epitaxial growth process was evaluated. The by-product layer was a dark-colored viscous liquid; it captured precursor gases and gaseous by-products, such as hydrogen, monosilane, propane, hydrogen chloride and chlorosilanes. These captured gases were spontaneously emitted in ambient nitrogen at room temperature. By an etching process using a chlorine trifluoride gas at low concentrations in ambient nitrogen, the by-product layer could be safely decomposed to gaseous fluorides of silicon and carbon. After finishing the etching, there remained a small amount of residue which included particles of carbon, silicon carbide and related compounds. Based on these results, the by-product layer formation process was discussed.

Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds

2010 ◽  
Vol 645-648 ◽  
pp. 175-178 ◽  
Author(s):  
Remigijus Vasiliauskas ◽  
Maya Marinova ◽  
Mikael Syväjärvi ◽  
Alkyoni Mantzari ◽  
Ariadne Andreadou ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Structural Characterization ◽  
Transmission Electron ◽  
Cubic Silicon Carbide ◽  
Sublimation Growth

Epitaxial growth of cubic silicon carbide on 6H-SiC substrates, and 6H-SiC substrates with (111) 3C-SiC buffer layer, deposited by vapour liquid solid mechanism, was compared. The morphological details of the grown layers were studied by optical microscopy and their microstructure by transmission electron microscopy. The influence of the substrate on the nucleation of 3C-SiC, the initial homoepitaxial 6H-SiC nucleation before 3C-SiC as well as the formation of defects, are discussed.

Complementary Analysis of Epitaxial Fe (001) Films with Improved Electronic Transport and Magnetic Properties

2010 ◽  
Vol 168-169 ◽  
pp. 300-302 ◽  
Author(s):  
G.M. Mikhailov ◽  
L.A. Fomin ◽  
V.Yu. Vinnichenko ◽  
I.V. Malikov ◽  
A.V. Chernikh
Keyword(s):  
Crystal Structure ◽  
Magnetic Properties ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Electronic Transport ◽  
Mean Free Path ◽  
Film Morphology ◽  
Different Temperatures ◽  
The Mean ◽  
Complementary Analysis

Complementary analysis of morphology, crystal structure, electronic transport, and magnetic properties is applied to optimize the epitaxial growth of Fe(001) films with the improved electronic transport and magnetic properties. It was found that the mean free path of residual electrons and coercive forces are correlated in the epitaxial single-crystal Fe(001) films grown under different temperatures and depend on the film morphology.

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