Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates

2013 ◽  
Vol 740-742 ◽  
pp. 19-22 ◽  
Author(s):  
Valdas Jokubavicius ◽  
Michl Kaiser ◽  
Philip Hens ◽  
Peter J. Wellmann ◽  
Rickard Liljedahl ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Vapor Phase ◽  
Growth Process ◽  
Room Temperature ◽  
Tantalum Foil ◽  
Photoluminescence Intensity ◽  
Room Temperature Photoluminescence ◽  
Optical Stability ◽  
Morphological Instabilities ◽  
Sublimation Growth

Fluorescent silicon carbide was grown using the fast sublimation growth process on low off-axis 6H-SiC substrates. In this case, the morphology of the epilayer and the incorporation of dopants are influenced by the Si/C ratio. Differently converted tantalum foils were introduced into the growth cell in order to change vapor phase stochiometry during the growth. Fluorescent SiC grown using fresh and fully converted tantalum foils contained morphological instabilities leading to lower room temperature photoluminescence intensity while an improved morphology and optical stability was achieved with partly converted tantalum foil. This work reflects the importance of considering the use of Ta foil in sublimation epitaxy regarding the morphological and optical stability in fluorescent silicon carbide.

Growth and Characterization of 2″ 6H-Silicon Carbide

1999 ◽  
Vol 572 ◽  
Author(s):  
Erwin Schmitt ◽  
Robert Eckstein ◽  
Martin Kölbl ◽  
Amd-Dietrich Weber
Keyword(s):  
Silicon Carbide ◽  
Boundary Conditions ◽  
Growth Process ◽  
Defect Density ◽  
Crystal Quality ◽  
Process Conditions ◽  
Thermal Boundary Conditions ◽  
Sublimation Growth ◽  
Defect Densities

ABSTRACTFor the growth of 2″ 6H-SiC a sublimation growth process was developed. By different means of characterization crystal quality was evaluated. Higher defect densities, mainly in the periphery of the crystals were found to be correlated to unfavourable process conditions. Improvement of thermal boundary conditions lead to a decreased defect density and better homogeneity over the wafer area.

Room temperature photoluminescence intensity enhancement in GaAs1-xBix alloys

2011 ◽  
Vol 9 (2) ◽  
pp. 259-261 ◽  
Author(s):  
A. R. Mohmad ◽  
F. Bastiman ◽  
J. S. Ng ◽  
S. J. Sweeney ◽  
J. P. R. David
Keyword(s):  
Room Temperature ◽  
Photoluminescence Intensity ◽  
Room Temperature Photoluminescence ◽  
Intensity Enhancement

Room-temperature Photoluminescence at 1540 nm from Amorphous Silicon Carbide Films Implanted with Erbium

2004 ◽  
Vol 815 ◽  
Author(s):  
Spyros Gallis ◽  
Harry Efstathiadis ◽  
Mengbing Huang ◽  
Alain E. Kaloyeros ◽  
Ei Ei Nyein ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Thermal Quenching ◽  
Chemical Vapor ◽  
Nuclear Reaction Analysis ◽  
Implantation Energy ◽  
Amorphous Silicon Carbide ◽  
Room Temperature Photoluminescence ◽  
Sic Films

AbstractIn the present work, strong room-temperature photoluminescence (PL) at 1540 nm is reported from erbium-implanted and post-annealed amorphous silicon carbide (a-SiC:Er) films. The stoichiometric SiC films were grown by thermal chemical vapor deposition (TCVD) at 800°C, and then implanted to Er fluence of 3×1015 ions/cm2 using 380 keV implantation energy. Post-implantation annealing was carried out at the temperature range of 550°C to 1350°C in argon (Ar) ambient. The resulting SiC films were characterized by Auger electron spectroscopy (AES), Rutherford backscattering (RBS), Fourier transform infrared spectroscopy (FTIR), nuclear reaction analysis (NRA), x-ray diffraction (XRD), and high-resolution transmission electron microscope (HRTEM). Clear PL behavior was seen from the annealed a-SiC:Er samples, even at room temperature, with PL intensity reaching a maximum for samples annealed at 900°C.Additional studies of thermal quenching of Er luminescence from a-SiC:Er samples annealed at 900°C indicated that as the sample temperature increased from 14K to room temperature, the luminescence intensity at 1540 nm dropped by a factor of ∼ 3.6. Moreover, the PL spectra of the a-SiC:Er samples did not exhibit any defect-generated luminescence. It is suggested that the lower density of Si and C vacancies in the stoichiometric a-SiC:Er, as compared to its non-stoichiometric a-Si1-xCx counterpart, along with the incorporation of a higher Er dopant concentration, can effectively diminish defect-produced luminescence and lead to a significant improvement in PL performance.These properties suggest that stoichiometric a-SiC:Er may be a good candidate for producing optoelectronic devices operating in the 1540 nm region.

Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

1996 ◽  
Vol 423 ◽  
Author(s):  
R. Eckstein ◽  
D. Hofmann ◽  
Y. Makarov ◽  
St. G. Müller ◽  
G. Pensl ◽  
...  
Keyword(s):  
Mass Transfer ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Growth Process ◽  
Numerical Models ◽  
Chemical Processes ◽  
Bulk Crystals ◽  
Electrical And Optical Properties ◽  
Bulk Growth ◽  
Sublimation Growth

AbstractExperimental and numerical analysis have been performed on the sublimation growth process of SiC bulk crystals. Crystallographic, electrical and optical properties of the grown silicon carbide (SIC) crystals have been evaluated by various characterization techniques. Numerical models for the global simulation of SiC bulk growth including heat and mass transfer and chemical processes are applied and experimentally verified.

Strong room temperature 510 nm emission from cubic InGaN/GaN multiple quantum wells

2004 ◽  
Vol 831 ◽  
Author(s):  
S.F. Li ◽  
D.J. As ◽  
K. Lischka ◽  
D.G. Pacheco-Salazar ◽  
L.M.R. Scolfaro ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Molecular Beam ◽  
Bandgap Energy ◽  
Multiple Quantum ◽  
Photoluminescence Intensity ◽  
Excitation Spectra ◽  
Room Temperature Photoluminescence ◽  
Double Heterostructures ◽  
Peak Energy

ABSTRACTCubic InGaN/GaN double heterostructures and multi-quantum-wells have been grown by Molecular Beam Epitaxy on cubic 3C-SiC. We find that the room temperature photoluminescence spectra of our samples has two emission peaks at 2.4 eV and 2.6 e V, respectively. The intensity of the 2.6 eV decreases and that of the 2.4 eV peak increases when the In mol ratio is varied between X = 0.04 and 0.16. However, for all samples the peak energy is far below the bandgap energy measured by photoluminescence excitation spectra, revealing a large Stokes-like shift of the InGaN emission. The temperature variation of the photoluminescence intensity yields an activation energy of 21 meV of the 2.6 eV emission and 67 meV of the 2.4 eV emission, respectively. The room temperature photoluminescence of fully strained multi quantum wells (x = 0.16) is a single line with a peak wavelength at about 510 nm.

Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVT

2014 ◽  
Vol 778-780 ◽  
pp. 31-34 ◽  
Author(s):  
Kanaparin Ariyawong ◽  
Nikolaos Tsavdaris ◽  
Jean Marc Dedulle ◽  
Eirini Sarigiannidou ◽  
Thierry Ouisse ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carbon Source ◽  
Single Crystal ◽  
Growth Process ◽  
Graphite Crucible ◽  
Vapor Species ◽  
Sublimation Growth ◽  
Graphite Part ◽  
Additional Carbon Source ◽  
Good Agreement

Graphite crucible in seeded sublimation growth of Silicon Carbide (SiC) single crystal does not only act as a container but also as an additional carbon source. The modeling of the growth process integrated with the etching phenomenon caused by the interaction between vapor species and the graphite crucible is shown to be able to predict the shape of the crystal front during the growth. The additional fluxes produced at the graphite part are delivered to the growing crystal mainly at the crystal periphery. The results obtained from the modeling are in good agreement with the experimental ones.

scholarly journals Behavior of Viscous Liquid Byproduct Formed in Exhaust Tube by Silicon Carbide Epitaxial Growth

2019 ◽  
Vol 8 (12) ◽  
pp. P805-P810
Author(s):  
Ichiro Mizushima ◽  
Hitoshi Habuka
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth ◽  
Viscous Liquid ◽  
Growth Process ◽  
Room Temperature ◽  
Product Layer ◽  
Layer Formation ◽  
Low Concentrations ◽  
Related Compounds ◽  
By Products

The behavior of the by-product produced in an exhaust tube by the semiconductor silicon carbide epitaxial growth process was evaluated. The by-product layer was a dark-colored viscous liquid; it captured precursor gases and gaseous by-products, such as hydrogen, monosilane, propane, hydrogen chloride and chlorosilanes. These captured gases were spontaneously emitted in ambient nitrogen at room temperature. By an etching process using a chlorine trifluoride gas at low concentrations in ambient nitrogen, the by-product layer could be safely decomposed to gaseous fluorides of silicon and carbon. After finishing the etching, there remained a small amount of residue which included particles of carbon, silicon carbide and related compounds. Based on these results, the by-product layer formation process was discussed.

Room Temperature Emission from Erbium Nanoparticles Embedded in a Silicon Matrix

1995 ◽  
Vol 405 ◽  
Author(s):  
A. Thilderkvist ◽  
J. Michel ◽  
S.-T. Ngiam ◽  
L. C. Kimerling ◽  
K. D. Kolenbrander
Keyword(s):  
Heat Treatment ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Optically Active ◽  
Photoluminescence Intensity ◽  
Supersonic Expansion ◽  
Silicon Matrix ◽  
Room Temperature Photoluminescence ◽  
Expansion Technique

AbstractStrong room temperature photoluminescence emission from thin films of Er nanoparticles embedded in a matrix of silicon is reported. The Er nanoparticles were produced by a pulsed laser ablation supersonic expansion technique. After a heat treatment at 500°C in an Ar-atmosphere, intense Er-related luminescence appears at λ = 1.54 gim, characteristic of intra-4f emission from Er3÷. Only a 50% reduction in photoluminescence intensity is observed as the temperature increases from 4 K to 300 K. A photocarrier mediated process is responsible for the excitation of the optically active Er-centers.

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