Free Catalyst Synthesis of GaN Nanostructures on Si-Substrate via CVD

2013 ◽  
Vol 756 ◽  
pp. 59-65
Author(s):  
Qathan Nofan Abdullah ◽  
Fong Kwong Yam ◽  
Hassan Zainuriah ◽  
Mohamed Bououdina
Keyword(s):  
Gallium Nitride ◽  
Light Emission ◽  
Uv Light ◽  
Chemical Vapor ◽  
Emission Peak ◽  
Metal Catalyst ◽  
Yellow Light ◽  
Catalyst Synthesis ◽  
Scattering Spectrum ◽  
Diffraction Peaks

In this article gallium nitride (GaN) nanostructures have been grown through chemical vapor deposition (CVD) on Silicon substrate, no metal catalyst was used. A high purity of gallium nitride powder was evaporated at 1150°C for 3 hour and then annealed at temperature 1000°C under flow of ammonia (NH3)gas. XRD shows the diffraction peaks located at 2θ= 32.4, 34.4, 36.8, 48.1, 57.8, 63.5, 68.3, 69.2° corresponding to the (100), (002), (101), (102), (110), (103), (200) and (112) diffraction planes of the product. These results revealed that the diffraction peaks can be attributed to the hexagonal GaN phase with lattice constant of a = 3.189 Å and c = 5.200 Å. Raman scattering spectrum shows four phonons mode correspond to GaN nanostructure are detected at 560, 570, 720 and 740 cm-1corresponding E1(TO), E2(high),A1(LO) and E1(LO) respectively. Photoluminescence (PL) of the GaN nanostructure exhibited two emission peaks, a weak and broad ultraviolet (UV) light emission peak at 390 nm and a strong yellow light (YL) emission peak at 550 nm.

Fabrication Gallium Nitride (GaN) Nanowires by Thermal Chemical Vapor Deposition (TCVD) Technique

2014 ◽  
Vol 925 ◽  
pp. 450-454 ◽  
Author(s):  
Qahtan Nofan Abdullah ◽  
Fong Kwong Yam ◽  
Yushamdan Yusof ◽  
Hassan Zainuriah
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Catalyst ◽  
Thermal Chemical Vapor Deposition ◽  
Gan Nanowires ◽  
Diffraction Peaks ◽  
Low Dimensional ◽  
Plane Diffraction

In this paper, low-dimensional gallium nitride (GaN) nanowires have been successfully grown on silicon substrate through thermal chemical vapor deposition (TCVD); no metal catalyst was used to assist growth of nanostructure. A high purity of gallium nitride powder was used as a starting material, evaporated at 1150OC for 2 hour and then annealing at temperature 1000OC under stable flow of ammonia (NH3) gas in horizontal quartz tube. The morphological investigation and crystalline and orientations growth of GaN nanostructure were carried out by employing scanning electron microscopy (SEM), high resolution X-ray diffractmeter (HRXRD). A room temperature micro-Raman spectrum were employed to study the optical properties and crystalline defects. XRD shows the diffraction peaks located at 2θ= 32.43, 34.57, 36.89, 48.05, 57.83, 63.62, 69.02, and 70.470corresponding to the (100 ), (002), (101), (102), (110) , (103),(112 ) and (201) plane diffraction of GaN structure. These results revealed that the diffraction peaks can be attributed to hexagonal GaN phase with lattice constant of a = 3.190 A° and c = 5.1890 A°. Here we report on the growth of GaN nanowires on Si (111) substrate by CVD . This technique is much simpler and cheaper than such techniques as MBE, MOCVD and HVPE.

scholarly journals Horizontal Assembly of Single Nanowire Diode Fabricated byp-nJunction GaN NW Grown by MOCVD

2014 ◽  
Vol 2014 ◽  
pp. 1-9 ◽  
Author(s):  
Ji-Hyeon Park ◽  
Suthan Kissinger ◽  
Yong Ho Ra ◽  
Kang San ◽  
Min Ji Park ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Uv Light ◽  
Light Exposure ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Chemical Vapor Deposition Method ◽  
Transport Studies ◽  
Transmission Electron ◽  
Metal Organic ◽  
Parallel Assembly

Uniaxiallyp-njunction gallium nitride nanowires have been synthesized via metal-organic chemical vapor deposition method. Nanowires prepared on Si(111) substrates were found to grow perpendicular to the substrate, and the transmission electron microscopy studies demonstrated that the nanowires had singlecrystalline structures with a <0001> growth axis. The parallel assembly of thep-njunction nanowire was prepared on a Si substrate with a thermally grown SiO2layer. The transport studies of horizontal gallium nitride nanowire structures assembled fromp- andn-type materials show that these junctions correspond to well-definedp-njunction diodes. Thep-njunction devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The horizontally assembled gallium nitride nanowire diodes suspended over the electrodes exhibited a substantial increase in conductance under UV light exposure. Apart from the selectivity to different light wavelengths, high responsivity and extremely short response time have also been obtained.

Synthesis of GaN Nanostructures at Low Temperatures by Chemical Vapor Deposition

2008 ◽  
Vol 1080 ◽  
Author(s):  
Christopher Y. Chow ◽  
Balaji Raghothamachar ◽  
Joan J. Carvajal ◽  
Hui Chen ◽  
Michael Dudley
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Synthesis Process ◽  
Metal Catalyst ◽  
Ni Catalyst ◽  
Tem Analysis ◽  
Gas Molecules

ABSTRACTIn this study, we report on the synthesis of gallium nitride (GaN) nanopowders on boron nitride (BN) substrates both with and without the use of metal catalyst by chemical vapor deposition (CVD). The synthesis process is based on the reaction between gallium (Ga) atoms from the decomposition of gallium acetylacetonate and ammonia (NH3) gas molecules. Using this process, gallium nitride (GaN) nanopowders have been synthesized at temperatures as low as 400°C, lower than previously reported. The grown nanopowders were characterized by SEM, EDX and TEM. Analysis reveals that higher yields were obtained by treating the BN substrates with Ni catalyst. Experiments to study the effect of growth conditions on the morphology of the nanopowders and analyze the growth mechanism are ongoing.

scholarly journals Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride

2021 ◽  
Vol 15 (6) ◽  
pp. 2170024
Author(s):  
Yuxuan Zhang ◽  
Zhaoying Chen ◽  
Kaitian Zhang ◽  
Zixuan Feng ◽  
Hongping Zhao
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Control of Morphology and Growth Direction of Gallium Nitride Nanostructures

2003 ◽  
Vol 789 ◽  
Author(s):  
Seung Yong Bae ◽  
Hee Won Seo ◽  
Jeunghee Park
Keyword(s):  
Electron Microscopy ◽  
Gallium Nitride ◽  
Large Scale ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Chemical Vapor Deposition Method ◽  
X Ray Diffraction ◽  
Oxide Mixture ◽  
Temperature Range ◽  
Transmission Electron

ABSTRACTVarious shaped single-crystalline gallium nitride (GaN) nanostructures were produced by chemical vapor deposition method in the temperature range of 900–1200 °C. Scanning electron microscopy, transmission electron microscopy, electron diffraction, x-ray diffraction, electron energy loss spectroscopy, Raman spectroscopy, and photoluminescence were used to investigate the structural and optical properties of the GaN nanostructures. We controlled the GaN nanostructures by the catalyst and temperature. The cylindrical and triangular shaped nanowires were synthesized using iron and gold nanoparticles as catalysts, respectively, in the temperature range of 900 – 1000 °C. We synthesized the nanobelts, nanosaws, and porous nanowires using gallium source/ boron oxide mixture. When the temperature of source was 1100 °C, the nanobelts having a triangle tip were grown. At the temperature higher up to 1200 °C the nanosaws and porous nanowires were formed with a large scale. The cylindrical nanowires have random growth direction, while the triangular nanowires have uniform growth direction [010]. The growth direction of the nanobelts is perpendicular to the [010]. Interestingly, the nanosaws and porous nanowires exhibit the same growth direction [011]. The shift of Raman, XRD, and PL bands from those of bulk was correlated with the strains of the GaN nanostructures.

Experimental Study of the Effect of Precursor Composition On the Microstructure of Gallium Nitride Thin Films Grown by the MOCVD Process

2021 ◽  
Author(s):  
Omar D. Jumaah ◽  
Yogesh Jaluria
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Transport Processes ◽  
Carrier Gas ◽  
Precursor Composition

Abstract Chemical vapor deposition (CVD) is a widely used manufacturing process for obtaining thin films of materials like silicon, silicon carbide, graphene and gallium nitride that are employed in the fabrication of electronic and optical devices. Gallium nitride (GaN) thin films are attractive materials for manufacturing optoelectronic device applications due to their wide band gap and superb optoelectronic performance. The reliability and durability of the devices depend on the quality of the thin films. The metal-organic chemical vapor deposition (MOCVD) process is a common technique used to fabricate high-quality GaN thin films. The deposition rate and uniformity of thin films are determined by the thermal transport processes and chemical reactions occurring in the reactor, and are manipulated by controlling the operating conditions and the reactor geometrical configuration. In this study, the epitaxial growth of GaN thin films on sapphire (AL2O3) substrates is carried out in two commercial MOCVD systems. This paper focuses on the composition of the precursor and the carrier gases, since earlier studies have shown the importance of precursor composition. The results show that the flow rate of trimethylgallium (TMG), which is the main ingredient in the process, has a significant effect on the deposition rate and uniformity of the films. Also the carrier gas plays an important role in deposition rate and uniformity. Thus, the use of an appropriate mixture of hydrogen and nitrogen as the carrier gas can improve the deposition rate and quality of GaN thin films.

Epitaxial GaN Layer Growth Using Nitrogen Enriched TiN Buffer Layers

2006 ◽  
Vol 916 ◽  
Author(s):  
Kazuhiro Ito ◽  
Yu Uchida ◽  
Sang-jin Lee ◽  
Susumu Tsukimoto ◽  
Yuhei Ikemoto ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Light Emission ◽  
Chemical Vapor ◽  
Nucleation Site ◽  
Layer Growth ◽  
Buffer Layers ◽  
Organic Chemical ◽  
Nitrogen Enrichment ◽  
Threading Dislocation ◽  
Sapphire Substrates

AbstractAbout 20 years ago, the discovery of an AlN buffer layer lead to the breakthrough in epitaxial growth of GaN layers with mirror-like surface, using a metal organic chemical vapor deposition (MOCVD) technique on sapphire substrates. Since then, extensive efforts have been continued to develop a conductive buffer layer/substrate for MOCVD-grown GaN layers to improve light emission of GaN light-emitting diodes. In the present study, we produced MOCVD-grown, continuous, flat epitaxial GaN layers on nitrogen enriched TiN buffer layers with the upper limit of the nitrogen content of TiN deposited at room temperature (RT) on sapphire substrates. It was concluded that the nitrogen enrichment would reduce significantly the TiN/GaN interfacial energy. The RT deposition of the TiN buffer layers suppresses their grain growth during the nitrogen enrichment and the grain size refining must increase nucleation site of GaN. In addition, threading dislocation density in the GaN layers grown on TiN was much lower than that in the GaN layers grown on AlN.

A Monolithic White-Light LED Based on GaN Doped with Be

2014 ◽  
Vol 93 ◽  
pp. 264-269 ◽  
Author(s):  
Henryk Teisseyre ◽  
Michal Bockowski ◽  
Toby David Young ◽  
Szymon Grzanka ◽  
Yaroslav Zhydachevskii ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
White Light ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Yellow Emission ◽  
Bulk Crystals ◽  
Light Emitting ◽  
Type Conductivity ◽  
P Type ◽  
Colour Rendering

In this communication, the use of gallium nitride doped with beryllium as an efficient converter for white light emitting diode is proposed. Until now beryllium in this material was mostly studied as a potential p-type dopant. Unfortunately, the realization of p-type conductivity in such a way seems impossible. However, due to a very intensive yellow emission, bulk crystals doped with beryllium can be used as light converters. In this communication, it is demonstrated that realisation of such diode is possible and realisation of a colour rendering index is close to that necessary for white light emission.

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