Low Cost Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication

2014 ◽  
Vol 778-780 ◽  
pp. 677-680 ◽  
Author(s):  
Takenori Fujiwara ◽  
Yugo Tanigaki ◽  
Yukihiro Furukawa ◽  
Kazuhiro Tonari ◽  
Akihiro Otsuki ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Oxide Layer ◽  
Low Cost ◽  
High Heat ◽  
Device Fabrication ◽  
Heat Resistant ◽  
Mask Layer ◽  
Sic Wafer ◽  
A Current

Cost of silicon carbide (SiC) wafer has been improved owing to the development of larger and higher quality wafer technologies, while the process stays long and complicated. In this paper, we propose a novel short process of ion implantation and provide the fabrication model SiC schottky barrier diodes (SiC-SBDs) devices. Currently common mask layer of ion implantation employs high heat resistant materials such as metal oxides. Because the ion is implanted to SiC wafer at high temperature between 300 °C and 800 °C due to avoid the damage of SiC crystal structure. The process using oxide layer tends to became long and complicated. On the other hand, our proposal process uses a heat resistant photoresist material as the mask instead of the oxide layer. The heat resistant photoresist is applied to newly developed SP-D1000 produced by Toray Industries, Inc.. We demonstrated to fabricate model SiC-SBDs devices based on our proposal process with SP-D1000 and confirmed the device working as same as a current process.

scholarly journals Novel Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication

2014 ◽  
Vol 27 (2) ◽  
pp. 233-236
Author(s):  
Takanori Fujiwara ◽  
Yugo Tanigaki ◽  
Yukihiro Furukawa ◽  
Kazuhiro Tonari ◽  
Akihiro Otsuki ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
High Heat ◽  
Device Fabrication ◽  
Heat Resistant ◽  
Implantation Process

Application of Si-Vapor Ambient Anneal for Post Ion Implantation Anneal and Simultaneous Improvement of Trench Sidewall Smoothness

2018 ◽  
Vol 924 ◽  
pp. 345-348
Author(s):  
Norihito Yabuki ◽  
Satoshi Torimi ◽  
Satoru Nogami ◽  
Makoto Kitabatake ◽  
Tadaaki Kaneko
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Ion Implantation ◽  
Annealing Process ◽  
Tantalum Carbide ◽  
Sidewall Roughness ◽  
Round Shape ◽  
Wafer Thickness ◽  
Activation Annealing ◽  
Sic Wafer

We propose the Si-vapor ambient anneal as a cap-free activation annealing (A/A) method for Silicon Carbide (SiC) using Tantalum Carbide / Tantalum composite materials (TaC/Ta). This method prevents the roughening of SiC surface by controlling the process function without conventional Carbon (C)-cap [1,2]. In this report, we evaluated the warping behavior of SiC wafer to confirm the effect of ion implantation (I/I) temperature (TI/I) and epi-ready treatment using Si-vapor ambient anneal. Wafer warp suppressing effect of high temperature I/I was confirmed and large wafer warpage occurred due to thinning of the wafer thickness. Furthermore we also observed the simultaneous improvement of the sharp edge shape and sidewall roughness of the trench under the appropriate conditions of the Si-vapor ambient anneal. It is possible to shape the round shape of the trench edge and to improve the roughness of trench sidewall by Si-vapor ambient anneal simultaneously with activation annealing process.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

CRONIFER II EXTRA, CRONIFER 45, CRONIFER III EXTRA, CRONIFER IV EXTRA

Alloy Digest ◽  
1992 ◽  
Vol 41 (6) ◽  
Keyword(s):  
Physical Properties ◽  
Tensile Properties ◽  
High Heat ◽  
Heat Resistant

Abstract CRONIFER II EXTRA, 45, III EXTRA AND IV EXTRA alloys are high heat resistant alloys, some with resistance to green rot and hardening environments. This datasheet provides information on composition, physical properties, elasticity, and tensile properties. Filing Code: Ni-405. Producer or source: VDM Technologies Corporation.

High Heat-Resistant and Degradable Polybenzoxazines with a Diacetal Structure

2021 ◽  
Author(s):  
Peng Wang ◽  
Shuai Zhang ◽  
Wanghezi Xu ◽  
Tianming Xiao ◽  
Qichao Ran
Keyword(s):  
High Heat ◽  
Heat Resistant

scholarly journals Molecular Physiological Characterization of a High Heat Resistant Spore Forming Bacillus subtilis Food Isolate

2021 ◽  
Vol 9 (3) ◽  
pp. 667
Author(s):  
Zhiwei Tu ◽  
Peter Setlow ◽  
Stanley Brul ◽  
Gertjan Kramer
Keyword(s):  
Bacillus Subtilis ◽  
Heat Resistance ◽  
Dipicolinic Acid ◽  
Laboratory Strain ◽  
High Heat ◽  
High Heat Resistance ◽  
Vegetative Cells ◽  
Heat Resistant ◽  
Food Isolate ◽  
Wet Heat

Bacterial endospores (spores) are among the most resistant living forms on earth. Spores of Bacillus subtilis A163 show extremely high resistance to wet heat compared to spores of laboratory strains. In this study, we found that spores of B. subtilis A163 were indeed very wet heat resistant and released dipicolinic acid (DPA) very slowly during heat treatment. We also determined the proteome of vegetative cells and spores of B. subtilis A163 and the differences in these proteomes from those of the laboratory strain PY79, spores of which are much less heat resistant. This proteomic characterization identified 2011 proteins in spores and 1901 proteins in vegetative cells of B. subtilis A163. Surprisingly, spore morphogenic protein SpoVM had no homologs in B. subtilis A163. Comparing protein expression between these two strains uncovered 108 proteins that were differentially present in spores and 93 proteins differentially present in cells. In addition, five of the seven proteins on an operon in strain A163, which is thought to be primarily responsible for this strain’s spores high heat resistance, were also identified. These findings reveal proteomic differences of the two strains exhibiting different resistance to heat and form a basis for further mechanistic analysis of the high heat resistance of B. subtilis A163 spores.

scholarly journals A 31 mW, 280 fs passively mode-locked fiber soliton laser using a high heat-resistant SWNT/P3HT saturable absorber coated with siloxane

2012 ◽  
Vol 20 (21) ◽  
pp. 23659 ◽  
Author(s):  
Takato Ono ◽  
Yuichiro Hori ◽  
Masato Yoshida ◽  
Toshihiko Hirooka ◽  
Masataka Nakazawa ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
High Heat ◽  
Heat Resistant

scholarly journals Design high heat-resistant stereocomplex poly(lactide acid) by cross-linking and plasticizing

2017 ◽  
Vol 37 (7) ◽  
pp. 2429-2435 ◽  
Author(s):  
Li Cui ◽  
Yahui Wang ◽  
Rundong Zhang ◽  
Yun Liu
Keyword(s):  
High Heat ◽  
Cross Linking ◽  
Heat Resistant
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