Influence of Sputtering Power on the Structure, Optical and Electric Properties of Cu3N Films
The Cu3N films were deposited successfully by reactive direct current magnetron sputtering, the films were comprehensively and systematically characterized by X-ray diffraction analyzer (XRD), UV-Visible spectrophotometer, four-probe resistance tester and other instruments. Results showed that under low deposition power (80W~100W), crystal orientation increased, which is attributed to higher energy under higher power. When sputtering power exceeded the value, excessive energy led to anti-sputtering hindering the process of further nucleation and growth of films. The transmittance of the films deposited under 100W reached the peak value of 78% on the scope of near-infrared light, and optical band gap (Eg) of 1.35ev. The resistivity of Cu3N films increased from 9.68×102Ω.cm to 2.12×103Ω.cm with increasing in sputtering power up to 100W.