Dislocations in SiC Revealed by NaOH Vapor Etching and a Comparison with X-Ray Topography Taken with Various g-Vectors

2016 ◽  
Vol 858 ◽  
pp. 389-392 ◽  
Author(s):  
Yong Zhao Yao ◽  
Yukari Ishikawa ◽  
Yoshihiro Sugawara ◽  
Koji Sato ◽  
Katsunori Danno ◽  
...  
Keyword(s):  
Threading Dislocations ◽  
Etch Pits ◽  
Burgers Vector ◽  
Monochromatic Beam ◽  
X Ray ◽  
Etch Pit ◽  
Pit Formation ◽  
Dislocation Behavior ◽  
Koh Etching

Threading dislocations (TDs) in 4H-SiC have been studied by comparing etch pits formed by NaOH vapor etching with results of synchrotron monochromatic-beam X-ray topography (XRT) taken under different g-vectors. Burgers vectors determined based on XRT results were utilized to investigate the etch pit characteristics of edge (TED), screw (TSD) and mixed (Burgers vector b=c+a, TMD) threading dislocations. It has been found that pit formation by NaOH vapor etching was very different to that by conventional molten KOH etching. We discuss the possibility of using NaOH vapor etching to distinguish TMDs from TSDs, and report a variety of characteristic etch pits formed by this method and their correlations to dislocation behavior.

Observation of Crystalline Defects Causing pn Junction Reverse Leakage Current

2008 ◽  
Vol 600-603 ◽  
pp. 999-1002 ◽  
Author(s):  
Tomokatsu Watanabe ◽  
Yukiyasu Nakao ◽  
Keiko Fujihira ◽  
Naruhisa Miura ◽  
Yoichiro Tarui ◽  
...  
Keyword(s):  
Leakage Current ◽  
Threading Dislocations ◽  
Etch Pits ◽  
Cross Sectional ◽  
Etch Pit ◽  
Reverse Leakage Current ◽  
Pn Junction ◽  
Crystalline Defect ◽  
Koh Etching ◽  
Epilayer Surface

A major crystalline defect which causes a pn junction reverse leakage current has been identified. A faintish stripe defect (FSD), the main cause of the leakage current, was observed in about 90% of the current leak points of our pn diodes. Double shell pits were observed at the edge of the FSD after molten KOH etching, indicating that the FSD is elongated on a basal plane and crosses the epilayer surface. The FSDs are sorted into several groups in terms of the shapes and arrangements of the etch pits. A cross-sectional TEM image of an FSD shows an eight-hold stacked structure, demonstrating that the defect contains a stacking fault. Etch pit observation after repetitive RIE of an epilayer revealed that FSDs originate both in threading dislocations in SiC substrates and from an SiC epitaxial growth process itself.

Elementary Screw and Mixed-Type Dislocations in 4H-SiC Characterized by X-Ray Topography Taken with Six Equivalent 11-28 g-Vectors and a Comparison to Etch Pit Evaluation

2017 ◽  
Vol 897 ◽  
pp. 185-188 ◽  
Author(s):  
Yong Zhao Yao ◽  
Yukari Ishikawa ◽  
Yoshihiro Sugawara ◽  
Yumiko Takahashi ◽  
Keiichi Hirano
Keyword(s):  
Chemical Etching ◽  
Mixed Type ◽  
Threading Dislocations ◽  
Etch Pits ◽  
X Ray ◽  
Etch Pit

We have studied threading dislocations (TDs) in 4H-SiC by means of X-ray topography (XRT) taken under 6 equivalent g-vector of 11-28 and two different chemical etching methods. Threading screw and mixed-type dislocations (TSDs and TMDs) can be distinguished and the direction of the a-components of TMDs can be determined by XRT. Efforts have been made to examine if there are features of etch pits that can be used to distinguish TMDs from TSDs.

Dislocation Revelation for 4H-SiC by Using Vaporized NaOH: A Possible Way to Distinguish Edge, Screw and Mixed Threading Dislocations by Etch Pit Method

2014 ◽  
Vol 778-780 ◽  
pp. 346-349 ◽  
Author(s):  
Yong Zhao Yao ◽  
Yukari Ishikawa ◽  
Yoshihiro Sugawara ◽  
Koji Sato ◽  
Katsunori Danno ◽  
...  
Keyword(s):  
Threading Dislocations ◽  
Power Devices ◽  
Etch Pits ◽  
X Ray ◽  
Etch Pit ◽  
Optical Images ◽  
Geometrical Features ◽  
Facet Orientation ◽  
Sic Wafer ◽  
Inexpensive Technique

In this paper, we report a newly developed dislocation-revealing etch pit method for 4H-SiC single crystal, which can distinguish edge (TED, Burgers vector b=a), elementary screw (TSD, b=1c) and mixed (TMD, b=c+a) threading dislocations. In this method, vaporized NaOH gas was used to etch the Si-face of a SiC wafer at substrate temperature around 950 °C. By a side-by-side comparison between the optical images of the etch pits and the X-ray topographic (XRT) images, it has been found that threading dislocations (TDs) in SiC could be revealed as hexagonal etch pits with distinct geometrical features (shape, size and facet orientation) depending on their Burgers vectors. Based on these results, we consider this etch pit method as an easily-operated and inexpensive technique to categorize TDs, and it may help to promote our understanding on the different roles that these types of TDs have played in the performance degradation of SiC power devices.

Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a

2011 ◽  
Vol 679-680 ◽  
pp. 269-272 ◽  
Author(s):  
Michael Dudley ◽  
Huan Huan Wang ◽  
Fang Zhen Wu ◽  
Sha Yan Byrapa ◽  
Balaji Raghothamachar ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Growth Conditions ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Threading Dislocations ◽  
Stress Growth ◽  
Burgers Vector ◽  
X Ray ◽  
Dislocation Behavior ◽  
New Generation

Synchrotron White Beam X-ray Topography studies are presented of dislocation behavior and interactions in a new generation of seventy-six millimeter diameter, 4H-SiC wafers grown using Physical Vapor Transport under specially designed low stress conditions. Such low stress growth conditions have enabled reductions of dislocation density by two or three orders of magnitude compared to the lowest previously reported levels [1]. In this paper, detailed topography analysis will be presented of the deflection of threading dislocations with Burgers vectors of c and c+a onto the basal plane leading to reductions of the density of such dislocations down to levels of ~187 cm-2. The deflection of the latter type of dislocations produces complex faulted defect configurations and models for their creation are presented and discussed.

scholarly journals Dislocation Arrangement in a Thick LEO GaN Film on Sapphire

2000 ◽  
Vol 5 (S1) ◽  
pp. 97-103
Author(s):  
Kathleen A. Dunn ◽  
Susan E. Babcock ◽  
Donald S. Stone ◽  
Richard J. Matyi ◽  
Ling Zhang ◽  
...  
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Burgers Vector ◽  
X Ray ◽  
The Third ◽  
Dislocation Arrangement ◽  
Image Position ◽  
Gan Film

Diffraction-contrast TEM, focused probe electron diffraction, and high-resolution X-ray diffraction were used to characterize the dislocation arrangements in a 16µm thick coalesced GaN film grown by MOVPE LEO. As is commonly observed, the threading dislocations that are duplicated from the template above the window bend toward (0001). At the coalescence plane they bend back to lie along [0001] and thread to the surface. In addition, three other sets of dislocations were observed. The first set consists of a wall of parallel dislocations lying in the coalescence plane and nearly parallel to the substrate, with Burgers vector (b) in the (0001) plane. The second set is comprised of rectangular loops with b = 1/3 [110] (perpendicular to the coalescence boundary) which originate in the coalescence boundary and extend laterally into the film on the (100). The third set of dislocations threads laterally through the film along the [100] bar axis with 1/3<110>-type Burgers vectors These sets result in a dislocation density of ∼109 cm−2. High resolution X-ray reciprocal space maps indicate wing tilt of ∼0.5º.

Effects of Pretreatment on the Etch Pit Formation during the Electrochemical Etching of Aluminum

2007 ◽  
Vol 124-126 ◽  
pp. 1561-1564
Author(s):  
Jae Kwang Lee ◽  
Yun Ho Shin ◽  
Jin Wook Kang ◽  
Yong Sug Tak
Keyword(s):  
Electrochemical Etching ◽  
High Density ◽  
Aluminum Surface ◽  
Etch Pits ◽  
Phosphate Ion ◽  
Etch Pit ◽  
Pit Formation ◽  
Fluorosilicic Acid ◽  
Etching Behavior ◽  
Chemical Pretreatments

The effect of chemical pretreatments on the electrochemical etching behavior of aluminum was investigated with the topographic studies of surface and the analysis of initial potential transients. Two-step pretreatments with H3PO4 and H2SiF6 result in a high density of pre-etch pits on aluminum surface by the incorporation of phosphate ion inside the oxide film and the removal of surface layer by aggressive fluorosilicic acid solution. It generates a high density of etch pits during electrochemical etching and results in the capacitance increase of etched Al electrode by expanding the surface area, up to 61.3 μF/cm2 with the pretreatment solution of 0.5M H3PO4 at 65°C and 10 mM H2SiF6 at 45°C.

Defect-Selective Etching of Icosahedral Boron Arsenide (B12As2) Crystals in Molten Potassium Hydroxide

2011 ◽  
Vol 1307 ◽  
Author(s):  
C.E. Whiteley ◽  
A. Mayo ◽  
J.H. Edgar ◽  
M. Dudley ◽  
Y. Zhang
Keyword(s):  
Potassium Hydroxide ◽  
High Energy ◽  
Selective Etching ◽  
Etch Pits ◽  
X Ray ◽  
Etch Pit ◽  
Dislocation Densities ◽  
Boron Arsenide ◽  
Defect Densities ◽  
Molten Nickel

ABSTRACTThe present work reports on the defect-selective etching (DSE) for estimating dislocation densities in icosahedral boron arsenide (B12As2) crystals using molten potassium hydroxide (KOH). DSE takes advantage of the greater reactivity of high-energy sites surrounding a dislocation, compared to the surrounding dislocation-free regions. The etch pits per area are indicative of the defect densities in the crystals, as confirmed by x-ray topography (XRT). Etch pit densities were determined for icosahedral boron arsenide crystals produced from a molten nickel flux as a function of etch time (1-5 minutes) and temperature (400-700°C). The etch pits were predominately triangle shaped, and ranged in size from 5-25μm. The average etch pit density of the triangle and oval etch-pits was on the order of 5x107cm-2 and 3x106cm-2 (respectively), for crystals that were etched for two minutes at 550°C.

Dislocations in diamond and the origin of trigones

1964 ◽  
Vol 278 (1373) ◽  
pp. 234-242 ◽  
Keyword(s):  
Phase Contrast ◽  
Natural Diamond ◽  
The Other ◽  
Burgers Vector ◽  
X Ray ◽  
Etch Pit ◽  
Other Hand ◽  
Vector Orientation

Combined X-ray topographic and phase-contrast micrographic studies of natural diamond octahedral faces show that pyramidal trigons are always associated with dislocation outcrops. No dislocations outcrop at flat-bottomed trigons. On the other hand, absence of trigons does not necessarily imply absence of outcropping dislocations. The X-ray evidence strongly supports the etch-pit hypothesis for the origin of trigons. A dependence of trigon pit slope upon the Burgers vector orientation of its associated dislocation was not conclusively demonstrated.

Investigation of Basal Plane Dislocation Reduction/Elimination by Molten KOH-NaOH Eutectic Etching Method

2012 ◽  
Vol 717-720 ◽  
pp. 125-128 ◽  
Author(s):  
Hai Zheng Song ◽  
Tangali S. Sudarshan
Keyword(s):  
Epitaxial Growth ◽  
Basal Plane ◽  
Etch Pits ◽  
Etch Pit ◽  
Etching Method ◽  
Dislocation Reduction ◽  
Short Period ◽  
Basal Plane Dislocation ◽  
Non Destructive ◽  
Koh Etching

An optimized molten KOH-NaOH eutectic etching method is developed to reveal defects in highly n-doped SiC substrates and to pre-treat the substrate prior to epitaxial growth. Different from the conventional KOH etching method, by way of eutectic method, the basal plane dislocation (BPD) conversion in the subsequent epitaxial growth is independent of the etch pit size pre-generated on the substrate. Even with a short period (~3 minutes) of pretreatment which does not generate any visible etch pits or degradation of surface morphology on the substrate, an epilayer with low BPD density -2 is still achieved. This simple and non-destructive method shows high potential to be practically employed as one of the basic pretreatment steps to the substrates in SiC epitaxial growth in order to achieve very low or free BPD density.

Direct Observation of Stacking Fault Nucleation from Deflected Threading Dislocations with Burgers Vector c+a in PVT Grown 4H-SiC

2014 ◽  
Vol 1693 ◽  
Author(s):  
Fangzhen Wu ◽  
Huanhuan Wang ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Stephan G. Mueller ◽  
...  
Keyword(s):  
Direct Observation ◽  
Basal Plane ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Formation Mechanisms ◽  
Threading Dislocations ◽  
Burgers Vector ◽  
X Ray ◽  
Transmission Geometry ◽  
Made In

ABSTRACTIn our previous studies [1-3], four kinds of stacking faults in 4H-SiC bulk crystal have been distinguished based on their contrast behavior differences in synchrotron white beam x-ray topography images. These faults are Shockley faults, Frank faults, Shockley plus c/2 Frank faults, and Shockley plus c/4 Frank faults. Our proposed formation mechanisms for these stacking faults involve the overgrowth of the surface outcrop associated with threading screw dislocations (TSDs) or threading mixed dislocations (TMDs) with Burgers vector of c+a by macrosteps and the consequent deflection of TSDs or TMDs onto the basal plane. Previous synchrotron x-ray topography observations were made in offcut basal wafers using transmission geometry. In this paper, further evidence is reported to confirm the proposed stacking fault formation mechanism. Observations are made in axially cut slices with surface plane {11-20}. Several kinds of stacking faults are recognized and their contrast behavior agrees with the four kinds previously reported. Direct observation is obtained of a Shockley plus c/4 Frank stacking fault nucleating from a TMD deflected onto the basal plane. The contrast from stacking faults on the basal plane in the axial slices is enhanced by recording images after rotating the crystal about the active -1010 reflection vector enabling a broader projection of the basal plane.

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