The Interlayer Effects of Nitrogen Implantation in the TiN/N2- Film Synthesis on the NAK80 Steel

2020 ◽  
Vol 977 ◽  
pp. 78-82
Author(s):  
Un Hak Hwang
Keyword(s):  
Phase Change ◽  
Chemical Components ◽  
Micro Hardness ◽  
Nitrogen Implantation ◽  
Tin Film ◽  
Nitrogen Ions ◽  
Nitrogen Ion ◽  
Film Synthesis ◽  
Deposited Film ◽  
Measured Hardness

Nitrogen ions with an energy of 200keV were used for the investigation of the interlayer effects of nitrogen implantation in the TiN/N2-film synthesis on the NAK80 steel. The nitrogen ion plasmas formed a broad ion mixing area at the interface between TiN film and NAK80 substrate. The measured hardness indicates the well mixing of TiN film into the NAK80 substrate, which may have an effect on increasing the adhesion of the deposited film. The chemical components and micro-hardness of the filmed surface were measured. The micro-hardness of Rockwell C-scale (HRC) was increased from 40 to 61 after the films of TiN/N2 were synthesized on the NAK80 substrate, the increased micro-hardness is attributed to the metallurgical phase change and formation of amorphous crystal due to the nitrogen implantation.

Investigation of Titanium Nitride Synthesized by Ion Beam Enhanced Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
Zhou Jiankun ◽  
Liu Xianghuai ◽  
Chen Youshan ◽  
Zheng Zhihong ◽  
Huang Wei ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Ion Beam ◽  
High Hardness ◽  
Columnar Structure ◽  
X Ray Diffraction ◽  
Low Friction ◽  
Oxygen Contamination ◽  
Nitrogen Ions ◽  
Nitrogen Ion ◽  
Deposited Film

ABSTRACTTitanium nitride films have been synthesized at room temperature by alternate deposition of titanium and bombardment by nitrogen ions with an energy of 40KeV. The component depth profiles and the structure of titanium nitride films were investigated by means of RBS, AES, TEM, XPS and X-ray diffraction. The results showed that titanium nitride films formed by ion beam enhanced deposition (IBED) had columnar structure and were mainly composed of TiN crystallites with random orientation. The oxygen contamination in titanium nitride films prepared by IBED was less than that of the deposited film without nitrogen ion bombardment. It was confirmed that a significant intermixed layer exists at the interface. The thickness of this layer was about 40 nm for the film prepared on iron plate. The mechanical properties of the film have been investigated. The films formed by IBED exhibited high hardness, improved wear resistance and low friction.

scholarly journals Characterization of nitrogen species incorporated into graphite using low energy nitrogen ion sputtering

2016 ◽  
Vol 18 (1) ◽  
pp. 458-465 ◽  
Author(s):  
Hisao Kiuchi ◽  
Takahiro Kondo ◽  
Masataka Sakurai ◽  
Donghui Guo ◽  
Junji Nakamura ◽  
...  
Keyword(s):  
Low Energy ◽  
Nitrogen Species ◽  
Ion Sputtering ◽  
Zigzag Edge ◽  
Nitrogen Doped ◽  
Doping Mechanism ◽  
Nitrogen Ions ◽  
Nitrogen Ion

The well-controlled nitrogen doped graphite with graphitic nitrogen located in the zigzag edge and/or vacancy sites can be realized using the low energy nitrogen sputtering. The doping mechanism of nitrogen ions is also discussed.

Synthesis of Iron Oxynitride by Nitrogen Ion Implantation of Iron Oxide

1988 ◽  
Vol 100 ◽  
Author(s):  
S. B. Ogale ◽  
Seema Teli ◽  
Sunita Chopda ◽  
D. M. Phase ◽  
S. M. Kanetkar
Keyword(s):  
Iron Oxide ◽  
Ion Implantation ◽  
Conversion Electron ◽  
Mossbauer Spectroscopy ◽  
Nitrogen Implantation ◽  
Nitrogen Ion Implantation ◽  
Conversion Electron Mössbauer Spectroscopy ◽  
Conversion Electron Mossbauer Spectroscopy ◽  
Implantation Process ◽  
Nitrogen Ion

ABSTRACTThe effect of N2+ ion implantation in ∝-Fe2O3 has been investigated by means of Conversion Electron Mossbauer Spectroscopy (CEMS). It Is shown that at a dose value of 1×1017 ions/cm2 and 3×1017 Ions/cm2 the samples exhibit new Interesting hyperfine features which can not be ascribed to known oxide or nitride phases. It Is thus concluded that Iron Oxynitrlde Is formed by the nitrogen Implantation process.

EFFECT OF ION-ENERGY ON THE PROPERTIES OF AMORPHOUS GaN FILMS PRODUCED BY ION-ASSISTED DEPOSITION

2001 ◽  
Vol 15 (28n29) ◽  
pp. 1355-1360 ◽  
Author(s):  
UDAY LANKE ◽  
ANNETTE KOO ◽  
SIMON GRANVILLE ◽  
JOE TRODAHL ◽  
ANDREAS MARKWITZ ◽  
...  
Keyword(s):  
Room Temperature ◽  
Single Phase ◽  
Thermal Evaporation ◽  
Ion Beam ◽  
Atomic Ratio ◽  
Nuclear Reaction Analysis ◽  
Ion Energy ◽  
X Ray ◽  
Nitrogen Ions ◽  
Nitrogen Ion

Amorphous GaN films were deposited on various substrates viz. Si (100), quartz, glass, Al, stainless steel and glassy carbon by thermal evaporation of gallium in the presence of energetic nitrogen ions from a Kaufman source. The films were deposited at room temperature and 5 × 10-4 mbar nitrogen partial pressure. The effect of a low energy nitrogen ion beam during the synthesis of films was investigated for energies 40 eV and 90 eV. The N:Ga atomic ratio, bonding state, microstructure, surface morphology, and electrical properties of the deposited a-GaN films were studied by different characterisation techniques. The films are found to be X-ray amorphous in nature, which is confirmed by Raman spectroscopy. Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA) indicate the N:Ga atomic ratio in the films. The 400-750 eV energy range is thought to be optimal for the production of single-phase amorphous GaN . The effect of ion-energy on optical, Raman, and electrical conductivity measurements of the films is also presented.

Surface Properties of TiN Films on AZ 31 Magnesium Alloys Deposited by Magnetron Sputtering Technique

2011 ◽  
Vol 314-316 ◽  
pp. 53-57 ◽  
Author(s):  
Xiang Rong Zhu ◽  
Nai Ci Bing ◽  
Zhong Ling Wei ◽  
Qiu Rong Chen
Keyword(s):  
Magnetron Sputtering ◽  
Surface Properties ◽  
Structural Defects ◽  
Micro Hardness ◽  
Dense Structure ◽  
Tin Films ◽  
Tin Film ◽  
Indentation Experiment ◽  
The Stability ◽  
Electronic Microscope

TiN films were deposited on the AZ 31 magnesium alloy substrates by d.c. magnetron sputtering technique. The surface properties of the films were investigated. The scanning electronic microscope observations reveal the dense structure characteristics of as-deposited TiN films. Under 200°C heat treatment for 30 minutes or 4 times’ heat cycles at 85°C for one hour, no structural defects such as cracks are observed on the surface of the films. Adhesion experiment further demonstrates the stability of the film and the strong combination between the film and the substrate. Nano-indentation experiment shows that the average micro-hardness of TiN film reaches 23.85 Gpa. Finally, the corrosion experiments in simulated body fluid initially reveal the degradation property of TiN film.

Structural and mechanical properties of tantalum thin films ected by nitrogen ion implantation

2020 ◽  
Vol 34 (15) ◽  
pp. 2050163 ◽  
Author(s):  
A. H. Ramezani ◽  
S. Hoseinzadeh ◽  
Zh. Ebrahiminejad
Keyword(s):  
Friction Coefficient ◽  
Wear Mechanism ◽  
Mechanism Study ◽  
X Ray Diffraction ◽  
Sem Images ◽  
Force Microscopy ◽  
Atomic Force ◽  
Coefficient Measurement ◽  
Nitrogen Ions ◽  
Nitrogen Ion

Tantalum bulk were implanted with nitrogen ions at different dose of [Formula: see text] ions/cm2 to [Formula: see text] ions/cm2 and at a energy 30 keV. The implanted samples were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), microhardness testing, friction coefficient measurements and wear mechanism study. Scanning electron microscopy (SEM) images were used to analyze the friction of samples. The XRD results confirmed that the increasing dose affects the formation of the TaN phase. Based on AFM images, the morphology and surface roughness change proportionally to grain size after implantation. It was found that hardness increases as energy increases. From the friction coefficient measurement, this coefficient decreases as energy increases. For the un-implanted sample, the wear mechanism has abrasion, and with increasing the energy, it shifts to being flake and sticky.

The Effect of Ion Implantation on Field Emission Property of Nanodiamond Films

2008 ◽  
Vol 8 (8) ◽  
pp. 4141-4145 ◽  
Author(s):  
Huang-Chin Chen ◽  
Umesh Palnitkar ◽  
Huan Niu ◽  
Hsiu-Fung Cheng ◽  
I-Nan Lin
Keyword(s):  
Ion Implantation ◽  
Field Emission ◽  
Structural Damage ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Emission Measurement ◽  
Before And After ◽  
Nitrogen Ions ◽  
Nitrogen Ion

Nanocrystalline diamond films prepared by microwave plasma enhanced chemical vapor deposition (MPECVD) were implanted using 110 keV nitrogen ions under fluence ranging from 1013–1014 ions/cm2. Scanning Electron Microscopy (SEM) and Raman spectroscopy were used to analyze the changes in the surface of the films before and after ion implantation. Results show that with nitrogen ion implantation in nanocrystalline diamond film cause to decrease in diamond crystallinity. The field emission measurement shows a sharp increase in current density with increase in dose. The ion implantation also alters the turn on field. It is observed that the structural damage caused by ion implantation plays a significant role in emission behaviour of nanocrystalline diamonds.

Irradiation Effect of Nitrogen Ion Beam on Carbon Nitride Thin Films

2003 ◽  
Vol 792 ◽  
Author(s):  
Shinichiro Aizawa ◽  
Yuka Nasu ◽  
Masami Aono ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Irradiation Effect ◽  
Carbon Filament ◽  
Cross Sectional ◽  
Nitrogen Ions ◽  
Nitrogen Ion

ABSTRACTIrradiation effect of low-energy nitrogen ion beam on amorphous carbon nitride (a-CNx) thin films has been investigated. The a-CNx films were prepared on silicon single crystal substrates by hot carbon-filament chemical vapor deposition (HFCVD). After deposition, the CNx films were irradiated by a nitrogen ion beam with energy from 0.1 to 2.0 keV. Irradiation effect on the film microstructure and composition was studied by SEM and XPS, focusing on the effect of nitrogen ion beam energy. Surface and cross sectional observations by SEM reveal that the as-deposited films show a densely distributed columnar structure and the films change to be a sparsely distributed cone-like structure after irradiation. It is also found that 2.0 keV ions skeltonize the films more clearly than 0.1 kev ions. Depth profiles of nitrogen in the films observed by XPS show that nitrogen absorption into films is more prominent after irradiation by 0.1 keV nitrogen ions than 2.0 keV ions.

The Effect of Nitrogen Implantation on Martensite in 304 Stainless Steel

1981 ◽  
Vol 7 ◽  
Author(s):  
R. G. Vardiman ◽  
R. N. Bolster ◽  
I. L. Singer
Keyword(s):  
Stainless Steel ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
304 Stainless Steel ◽  
Nitrogen Implantation ◽  
Nitrogen Ion Implantation ◽  
Surface Polishing ◽  
Transmission Electron ◽  
Fine Surface ◽  
Nitrogen Ion

ABSTRACTMartensite will form in austenitic 304 stainless steel when it is deformed. Transmission electron microscope studies show that nitrogen ion implantation causes a reversion of the martensite to austenite. Specimens containing martensite resulting from fine surface polishing and heavy rolling are examined. The transformation is shown not to occur because of temperature increases during implantation. The effect is related to recent wear results in 304 stainless steel.

Optical and electronic properties of nitrogen-implanted diamond-like carbon films

1994 ◽  
Vol 9 (1) ◽  
pp. 85-90 ◽  
Author(s):  
G.L. Doll ◽  
J.P. Heremans ◽  
T.A. Perry ◽  
J.V. Mantese
Keyword(s):  
Amorphous Carbon ◽  
Carbon Film ◽  
Film Surface ◽  
Carbon Films ◽  
Localized States ◽  
Diamond Like Carbon ◽  
Nitrogen Implantation ◽  
Electrical Measurements ◽  
Nitrogen Ion ◽  
Ion Implanted

Optical and electrical measurements on nitrogen ion-implanted diamond-like carbon films are presented. Raman scattering measurements, which probe the crystallinity of the film surface, indicate that nitrogen implantation reduces the finite crystallographic order in the pristine carbon films. The absence of molecular vibrations in the infrared absorption spectra of the films argues against a polymeric structure of the ion-implanted films. Spectroscopic ellipsometry experiments determine the change in the optical constants of the carbon film due to nitrogen implantation. Electrical de conductivity measurements are interpreted within the framework of a schematic density of states picture of graphitic τ-electrons in an amorphous carbon system. Taken collectively, the optical and electrical measurements suggest that nitrogen implantation increases the density of localized states within the 1.5 eV bandgap of the quasi-amorphous carbon film, thereby reducing the bandgap and increasing the conductivity of the nitrogen-implanted films.

Sign in / Sign up

Export Citation Format

Share Document