BaTiO3/ Teflon Nanocomposite Ferroelectric Thin Films for Low Voltage Electrowetting Systems

2018 ◽  
Vol 281 ◽  
pp. 616-621
Author(s):  
Wei Qiang Wang ◽  
Jia Qi Niu ◽  
Yan Su
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
Nanocomposite Film ◽  
High Performance ◽  
Low Voltage ◽  
Cost Effective ◽  
Frequency Change ◽  
Nanocomposite Thin Film ◽  
Teflon Af ◽  
Low Voltage Operation

We present a simple and cost effective method for the design and fabrication of electrowetting devices using a nanocomposite thin film of BaTiO3 and Teflon-AF as the dielectric layer to achieve low voltage operation. The nanocomposite film is prepared by using Teflon-AF as matrix and BaTiO3 nanoparticles as the filler material. The solution is spin coated to deposit thin film on metal electrodes. The characterization results show that the nanocomposite thin film can serve as the dielectric for EWOD with a high dielectric constant and a crack free hydrophobic film. To test the electrowetting effect, the variation of droplet contact angle achieved with DC voltage, AC voltage and AC frequency change are fully experimented. The EWOD device with nanocomposite dielectric layer also manipulates water droplet at low driving voltages. This study shows the potential of using ferroelectric nanocomposite film as the dielectric layer in high-performance EWOD devices.

SuPR-NaP Technique for Printing Ultrafine Silver Electrodes and its Use for Low-Voltage Operation of Organic Thin-Film Transistors

MRS Advances ◽  
2018 ◽  
Vol 3 (49) ◽  
pp. 2931-2936
Author(s):  
G. Kitahara ◽  
K. Aoshima ◽  
J. Tsutsumi ◽  
H. Minemawari ◽  
S. Arai ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Base Layer ◽  
Organic Thin Film ◽  
Low Voltage Operation ◽  
Silver Electrodes

ABSTRACTRecently, an epoch-making printing technology called “SuPR-NaP (Surface Photo-Reactive Nanometal Printing)” that allows easy, high-speed, and large-area manufacturing of ultrafine silver wiring patterns has been developed. Here we demonstrate low-voltage operation of organic thin-film transistors (OTFTs) composed of printed source/drain electrodes that are produced by the SuPR-NaP technique. We utilize an ultrathin layer of perfluoropolymer, Cytop, that functions not only as a base layer for producing patterned reactive surface in the SuPR-NaP technique but also as an ultrathin gate dielectric layer of OTFTs. By the use of 22 nm-thick Cytop gate dielectric layer, we successfully operate polycrystalline pentacene OTFTs below 2 V with negligible hysteresis. We also observe the improvement of carrier injection by the surface modification of printed silver electrodes. We discuss that the SuPR-NaP technique allows the production of high-capacitance gate dielectric layers as well as high-resolution printed silver electrodes, which provides promising bases for producing practical active-matrix OTFT backplanes.

Thin dielectric-layer-enabled low-voltage operation of fully printed flexible carbon nanotube thin-film transistors

2020 ◽  
Vol 31 (23) ◽  
pp. 235301 ◽  
Author(s):  
Jialuo Chen ◽  
Saswat Mishra ◽  
Diego Vaca ◽  
Nitish Kumar ◽  
Woon-Hong Yeo ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Low Voltage Operation ◽  
Thin Dielectric Layer

The mechanical bending effect and mechanism of high performance and low-voltage flexible organic thin-film transistors with a cross-linked PVP dielectric layer

2014 ◽  
Vol 2 (16) ◽  
pp. 2998-3004 ◽  
Author(s):  
Mingdong Yi ◽  
Yuxiu Guo ◽  
Jialin Guo ◽  
Tao Yang ◽  
Yuhua Chai ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Bending Effect ◽  
Mechanical Bending

Low operational voltage flexible organic thin-film transistors (OTFTs) have been achieved using two layers of cross-linked PVP as the dielectric layer on a flexible polyimide (PI) substrate.

Using Ferroelectric Thin Film as the Dielectric for Electrowetting-on-Dielectric

2016 ◽  
Vol 697 ◽  
pp. 227-230 ◽  
Author(s):  
Jia Qi Niu ◽  
Zhen Kun Xie ◽  
Zhen Xing Yue ◽  
Wei Qiang Wang
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
High Performance ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Ceramic ◽  
Frequency Change ◽  
Electrowetting On Dielectric ◽  
Pzt Thin Film ◽  
High Dielectric ◽  
Film Dielectric

In this paper, the dielectric and electrowetting properties of Pb (Zr0.4Ti0.6)O3 (PZT) ferroelectric thin film are studied as the dielectric layer in electrowetting-on-dielectric (EWOD) device. The PZT thin film is formed by spin-coating, pyrolysis and annealing. The characterization results show that PZT thin film can serve as the dielectric of EWOD with a high dielectric constant and a great electrowetting performance when used in silicon oil bath environment. To test the electrowetting effect, a EWOD device with 200nm thick PZT ferroelectric thin film dielectric layer is fabricated. The variation of contact angle between droplet and device surface achieved with DC voltage, AC voltage and AC frequency change of electrowetting on PZT are fully experimented. The EWOD device with PZT dielectric layer can manipulate water droplet at low driving voltages. This study shows the potential of using ferroelectric ceramic material as the dielectric layer in high-performance EWOD devices.

Current State of Biological High-Resolution Scanning Electron Microscopy

1988 ◽  
Vol 46 ◽  
pp. 180-181 ◽  
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Backscattered Electrons ◽  
Lens Position ◽  
Low Voltage Operation ◽  
Signal Collection ◽  
Probe Size ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

A new generation of high performance field emission scanning electron microscopes (FSEM) is now commercially available (JEOL 890, Hitachi S 900, ISI OS 130-F) characterized by an "in lens" position of the specimen where probe diameters are reduced and signal collection improved. Additionally, low voltage operation is extended to 1 kV. Compared to the first generation of FSEM (JE0L JSM 30, Hitachi S 800), which utilized a specimen position below the final lens, specimen size had to be reduced but useful magnification could be impressively increased in both low (1-4 kV) and high (5-40 kV) voltage operation, i.e. from 50,000 to 200,000 and 250,000 to 1,000,000 x respectively.At high accelerating voltage and magnification, contrasts on biological specimens are well characterized1 and are produced by the entering probe electrons in the outmost surface layer within -vl nm depth. Backscattered electrons produce only a background signal. Under these conditions (FIG. 1) image quality is similar to conventional TEM (FIG. 2) and only limited at magnifications >1,000,000 x by probe size (0.5 nm) or non-localization effects (%0.5 nm).

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