The Effect of pH and Monomer Concentration on Polyaniline Thin Films Grown Using Electrodeposition

2021 ◽  
Vol 317 ◽  
pp. 483-487
Author(s):  
Nur Atikah Shaari ◽  
Nor Azlian Abdul-Manaf
Keyword(s):  
Thin Films ◽  
Monomer Concentration ◽  
Emeraldine Base ◽  
X Ray Diffraction ◽  
Raman Spectrometer ◽  
Full Characterization ◽  
Uv Visible ◽  
Pani Layer ◽  
Reduced State

Polyaniline (PANI) thin films were successfully prepared from an aqueous electrolyte bath containing aniline and sulphuric acid (H2SO4) using electrodeposition method. The present study demonstrates that the properties of PANI thin film depends on the variation of pH and aniline concentration in prepared precursor. The optical and structural of PANI thin films were characterized using UV-Visible spectrometer (UV-Vis), X-ray diffraction spectrometer (XRD), Fourier Transform Infra-Red spectrometer (FTIR) and Raman spectrometer. PANI layer grown at pH 2.00 displayed green colour layer which denoted as emeraldine base (half oxidized state of PANI) while at pH 3.80 the colour of PANI layer was yellow representing the leucoemeraldine base (fully reduced state of PANI). Result obtained from FTIR confirmed the footprint of PANI and Raman spectrometer confirmed the half oxidized emeraldine base of PANI. Optical analysis using UV-Vis demonstrated the smallest energy band gap, Eg of PANI is 3.54 eV for sample with 0.50 M aniline concentration and pH 2.00. The trend shows that the bandgap of PANI is increased as the pH increased from 2.00 to 3.80. XRD result showed that all the deposited PANI layers were amorphous. Full characterization of this material is providing some information on PANI behavior due to pH and concentration in the prepared precursor.

Structural, Morphological, Optical, and Electrical Characterization of Fluorine Doped Tin Oxide (FTO) Thin Films Synthesized by PSP

2019 ◽  
Vol 286 ◽  
pp. 64-71 ◽  
Author(s):  
Raquel Ramírez-Amador ◽  
Gregorio Flores-Carrasco ◽  
Salvador Alcántara-Iniesta ◽  
Julio Rodríguez González ◽  
Ogilver García-Teniza ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Visible Region ◽  
Electrical Characterization ◽  
Optical Transmittance ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Maximum Value ◽  
Uv Visible

This paper reports a study of Fluorine-doped Tin Oxide (FTO) thin films deposited by the Pneumatic Spray Pyrolysis (PSP) technique. The films were deposited on glass substrates at 450 °C with a ~125 nm thickness, using an F/Sn ratio of 0, 0.2, 0.35, 0.5, 0.65 and 0.85, respectively. The samples were characterized by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), UV-visible Spectroscopy and Hall Effect techniques, respectively. XRD results revealed that the FTO thin films were polycrystalline with a tetragonal rutile-type structure and had preferential orientations along (110) planes. SEM studies showed that FTO thin film morphology was totally affected by an increased F/Sn ratio. The calculated grain mean sizes were 10-35 nm. Optical transmittance spectra of the films showed a high transparency of approximately 80-90 % in the visible region. The optical gap of FTO thin films was in a 3.70-4.07 eV range. Electrical and optical properties of these films were studied as a function of the F/Sn ratio. Therefore, the optimal FTO (F/Sn = 0.5) films revealed a maximum value of the figure of merit approximately 8.05 × 10-3 (Ω-1) at λ = 400 nm. The high-conducting and transparent-elaborating FTO thin films may have several promising applications due to its multifunctional properties.

scholarly journals A Versatile Approach to Access Trimetallic Complexes Based on Trisphosphinite Ligands

Molecules ◽  
2020 ◽  
Vol 25 (3) ◽  
pp. 593
Author(s):  
Juan Miranda-Pizarro ◽  
Macarena G. Alférez ◽  
M. Dolores Fernández-Martínez ◽  
Eleuterio Álvarez ◽  
Celia Maya ◽  
...  
Keyword(s):  
Coordination Chemistry ◽  
Late Transition Metal ◽  
X Ray Diffraction ◽  
X Ray ◽  
Full Characterization ◽  
Metal Precursors ◽  
Straightforward Method ◽  
One Step ◽  
Late Transition

A straightforward method for the preparation of trisphosphinite ligands in one step, using only commercially available reagents (1,1,1-tris(4-hydroxyphenyl)ethane and chlorophosphines) is described. We have made use of this approach to prepare a small family of four trisphosphinite ligands of formula [CH3C{(C6H4OR2)3], where R stands for Ph (1a), Xyl (1b, Xyl = 2,6-Me2-C6H3), iPr (1c), and Cy (1d). These polyfunctional phosphinites allowed us to investigate their coordination chemistry towards a range of late transition metal precursors. As such, we report here the isolation and full characterization of a number of Au(I), Ag(I), Cu(I), Ir(III), Rh(III) and Ru(II) homotrimetallic complexes, including the structural characterization by X-ray diffraction studies of six of these compounds. We have observed that the flexibility of these trisphosphinites enables a variety of conformations for the different trimetallic species.

Thermal conversion of CBD grown ZnS thin films to ZnO

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Kooliyankal Naseema ◽  
Kaniyamkandy Ribin ◽  
Nidiyanga Navya ◽  
Prasoon Prasannan
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Thermal Conversion ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
Anion Substitution ◽  
Nano Crystalline ◽  
Before And After ◽  
Uv Visible

AbstractNano crystalline zinc sulfide thin films were deposited onto glass substrates by chemical bath deposition method. One of the samples was annealed at 300 °C for 2 h in air using a muffle furnace. The prepared thin films were investigated by X-ray diffraction (XRD), UV–visible spectroscopy (UV–vis), photoluminescence spectroscopy (PL), scanning electron microscopy (SEM) and Raman spectroscopy (FT-R) studies before and after annealing. The analysis confirmed the thermal-induced anion substitution and conversion of ZnS crystal to ZnO wurtzite crystal. XRD pattern showed that these films were phase pure and polycrystalline in nature. Optical band gap was found to be 3.86 eV for ZnS and 3.21 eV for ZnO. The films prepared by this simple, low-cost technique are suitable for photovoltaic and optoelectronic applications.

Optical properties of anatase TiO2 films modified by N ion implantation

2012 ◽  
Vol 90 (1) ◽  
pp. 39-43 ◽  
Author(s):  
X. Xiang ◽  
D. Chang ◽  
Y. Jiang ◽  
C.M. Liu ◽  
X.T. Zu
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
Light Region ◽  
Uv Visible ◽  
Substrate Temperatures

Anatase TiO2 thin films are deposited on K9 glass samples at different substrate temperatures by radio frequency magnetron sputtering. N ion implantation is performed in the as-deposited TiO2 thin films at ion fluences of 5 × 1016, 1 × 1017, and 5 × 1017 ions/cm2. X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy (XPS), and UV–visible spectrophotometer are used to characterize the films. With increasing N ion fluences, the absorption edges of anatase TiO2 films shift to longer wavelengths and the absorbance increases in the visible light region. XPS results show that the red shift of TiO2 films is due to the formation of N–Ti–O compounds. As a result, photoactivity is enhanced with increasing N ion fluence.

ITO Thin Films on Silicon Buffer by Sol Gel Method

2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Optical Transmission ◽  
Sol Gel ◽  
Precursor Solution ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ito Thin Films ◽  
Uv Visible

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.

Characterization of SrBi2Nb2O9 Thin Films Prepared by Sol Gel Technique

1996 ◽  
Vol 459 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
D. Ravichandran ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Band ◽  
Sol Gel ◽  
Orthorhombic Symmetry ◽  
X Ray Diffraction ◽  
Ft Ir ◽  
Gel Technique ◽  
High Degree ◽  
First Time

ABSTRACTThin films of SrBi2Nb2O9 (SBN) with thicknesses of 0.1, 0.2, and 0.4 μ were grown by Sol-gel technique on silicon, and annealed at 650°C. The SBN films were investigated by Raman scatering for the first time. Raman spectra in some of the samples present bands around 60, 167, 196, 222, 302, 451, 560, 771, 837, and 863 cm−1, which correspond to the SBN formation. The study indicates that the films are inhomogeneous, and only in samples with thicknesses 0.4 μ the SBN material was found in some places. The prominent Raman band around 870 cm−1, which is the A1g mode of the orthorhombic symmetry, is assigned to the symmetric stretching of the NbO6 octahedrals. The frequency of this band is found to shift in different places in the same sample, as well as from sample to sample. The frequency shifts and the width of the Raman bands are discussed in term of ions in non-equilibrium positions. FT-IR spectra reveal a sharp peak at 1260 cm−1, and two broad bands around 995 and 772 cm−1. The bandwidths of the latter two bands are believed to be associated with the presence of a high degree of defects in the films. The experimental results of the SBN films are compared with those obtained in SBT (T=Ta) films. X-ray diffraction and SEM techniques are also used for the structural characterization.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

Structural and Optical Characterization of Zinc Telluride Thin Films

2013 ◽  
Vol 665 ◽  
pp. 254-262 ◽  
Author(s):  
J.R. Rathod ◽  
Haresh S. Patel ◽  
K.D. Patel ◽  
V.M. Pathak
Keyword(s):  
Thin Films ◽  
Extinction Coefficient ◽  
Nir Spectroscopy ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Evaporation Technique ◽  
Film Form ◽  
Znte Thin Films

Group II-VI compounds have been investigated largely in last two decades due to their interesting optoelectronic properties. ZnTe, a member of this family, possesses a bandgap around 2.26eV. This material is now a day investigated in thin film form due to its potential towards various viable applications. In this paper, the authors report their investigations on the preparation of ZnTe thin films using vacuum evaporation technique and their structural and optical characterizations. The structural characterization, carried out using an X-ray diffraction (XRD) technique shows that ZnTe used in present case possesses a cubic structure. Using the same data, the micro strain and dislocation density were evaluated and found to be around 1.465×10-3lines-m2and 1.639×1015lines/m2respecctively. The optical characterization carried out in UV-VIS-NIR region reveals the fact that band gap of ZnTe is around 2.2eV in present case. In addition to this, it was observed that the value of bandgap decreases as the thickness of films increases. The direct transitions of the carries are involved in ZnTe. Using the data of UV-VIS-NIR spectroscopy, the transmission coefficient and extinction coefficient were also calculated for ZnTe thin films. Besides, the variation of extinction coefficient with wavelength has also been discussed here.

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