Low Power Silicon Carbide RS-485 Transceiver

2016 ◽  
Vol 2016 (HiTEC) ◽  
pp. 000257-000262 ◽  
Author(s):  
M. R. Benavides ◽  
A. N. Castillo ◽  
A. Rahman ◽  
M. Barlow ◽  
D. Abreu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Low Power ◽  
Data Acquisition ◽  
Propagation Delay ◽  
Transmission System ◽  
Temperature Data ◽  
Deep Earth ◽  
High Temperature Data ◽  
Potential Applications

Abstract This paper describes the first RS-485 transceiver for high temperature applications designed in SiC-CMOS. The transceiver was designed and developed in a 1.2μm CMOS HiTSiC® process from Raytheon UK. It has been tested at a voltage supply of 15 V from temperatures of 25°C to 400°C. At 320°C, the rise and fall times are 40 ns (for both), and the propagation delay from driver to output high and to output low is 150 ns and 50 ns respectively. The transceiver has been demonstrated to operate over 700 m of Cat5 cable. A high temperature data acquisition and transmission system has potential applications such as deep earth drilling, remote connection to high temperature locations, and high temperature data acquisition.

Oxygen-doped Sb4Te phase change films for high-temperature data retention and low-power application

2013 ◽  
Vol 551 ◽  
pp. 551-555 ◽  
Author(s):  
Yifeng Hu ◽  
Mingcheng Sun ◽  
Sannian Song ◽  
Zhitang Song ◽  
Jiwei Zhai
Keyword(s):  
High Temperature ◽  
Low Power ◽  
Phase Change ◽  
Temperature Data ◽  
Data Retention ◽  
High Temperature Data ◽  
Power Application

scholarly journals High Temperature Data Converters in Silicon Carbide CMOS

2017 ◽  
Vol 64 (4) ◽  
pp. 1426-1432 ◽  
Author(s):  
Ashfaqur Rahman ◽  
Landon Caley ◽  
Sajib Roy ◽  
Nathan Kuhns ◽  
Alan Mantooth ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Data Converters ◽  
Temperature Data ◽  
High Temperature Data

Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application

2011 ◽  
Vol 65 (4) ◽  
pp. 327-330 ◽  
Author(s):  
Cheng Peng ◽  
Liangcai Wu ◽  
Feng Rao ◽  
Zhitang Song ◽  
Xilin Zhou ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Low Power ◽  
Phase Change ◽  
Temperature Data ◽  
Data Retention ◽  
High Temperature Data ◽  
Power Application

Performance Test Results of a Precision Data Acquisition and Control Platform for 200°C+ High Temperature Environments

2018 ◽  
Vol 2018 (HiTEC) ◽  
pp. 000103-000111
Author(s):  
Jeff Watson ◽  
Maithil Pachchigar ◽  
Ross Bannatyne ◽  
Clay Merritt ◽  
Christopher Conrad ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Power ◽  
Data Acquisition ◽  
Performance Test ◽  
Rapid Development ◽  
Sensor Data ◽  
Harsh Environment ◽  
Test Results ◽  
Precision Data ◽  
And Control

Abstract In recent years there has been an increasing selection of commercially available electronic components specified for very high temperature (200C+) operation, driven by the needs of harsh-environment applications such as oil and gas exploration/production, aerospace, heavy industrial, and automotive. However, there remains a significant technical challenge to integrate these components into reliable, high performance systems. We previously presented a complete reference design of a precision multichannel sensor data acquisition and control system rated to 200C, including characterized hardware, firmware, and software. The design is based around low power 16 bit SAR ADCs and an ARM® Cortex®-M0 processor and is optimized for high resolution and high throughput measurements while maintaining low power and a small footprint. In this paper we present the test results of this system over temperature. The reference platform is available off the shelf, including hardware design files, processor firmware source code, and PC software for data logging and display, providing engineers a rapid development tool for prototyping and a faster path to production for complex harsh-environment applications.

Material Properties as Indicators of Machining Behavior

1999 ◽  
Author(s):  
Robin Stevenson
Keyword(s):  
High Temperature ◽  
High Strain Rate ◽  
Strain Rate ◽  
Deformation Mechanism ◽  
Material Properties ◽  
High Strain ◽  
Temperature Data ◽  
Test Procedures ◽  
High Temperature Data ◽  
Conventional Material

Abstract This paper demonstrates that the material properties developed using conventional material test procedures can be consistent with those developed during machining. However if extensive extrapolation is required to develop the high strain/high strain rate/high temperature data characteristic of machining, it is important to ensure that no change in deformation mechanism occurs over the extrapolation range. If such a mechanism change does occur the extrapolated data will be invalid.

Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures

2013 ◽  
Vol 740-742 ◽  
pp. 891-894 ◽  
Author(s):  
Lucy Claire Martin ◽  
David T. Clark ◽  
E.P. Ramsay ◽  
A.E. Murphy ◽  
R.F. Thompson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Metal Oxide ◽  
Low Power ◽  
Gate Dielectric ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Dielectric Interface ◽  
Charge Pumping ◽  
The Hill

The development of silicon carbide complimentary metal-oxide-semiconductor (CMOS) is a key-enabling step in the realisation of low power circuitry for high-temperature applications. This paper describes investigations using the charge pumping technique into the properties of the gate dielectric interface as part of the development of the technology to realise monolithic fabrication of both n and p channel devices. A comparison of the charge pumping technique and the Hill-Coleman and Terman methods is also carried out to explore the feasibility of the technique.

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