Performance of commercial SOI driver in harsh conditions (up to 200°C)

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000054-000057
Author(s):  
K. El Falahi ◽  
B. Allard ◽  
D. Tournier ◽  
D. Bergogne
Keyword(s):  
Cooling System ◽  
Wide Band ◽  
Silicon On Insulator ◽  
Junction Temperature ◽  
Test Results ◽  
Wide Band Gap ◽  
Ambient Temperatures ◽  
Power Modules ◽  
Harsh Conditions

Power electronics based on wide band gap materials, such as silicon carbide (SiC) or gallium nitride (GaN), are nowadays capable of operation at increased ambient temperatures. High Temperature Intelligent Power Modules are unfortunately not available due to a lack of integrated driver able to withstand either harsh environment or enhanced junction temperature due to reduction in the cooling system. The most appropriated technology for such a driver seems to be Silicon on Insulator (SOI). The maximum operating temperature of commercial SOI devices with conventional packaging is usually 150°C up to 175°C as specified by manufacturers. In this paper, we actually try to observe the performance and de-ratings of these SOI circuits at temperatures above 175°C. Experimental characterization of commercial SOI MOSFET drivers from room temperature to 200°C and beyond is presented. Parameters such as output current amplitude, delay time, rise time and fall time of the output waveforms of the drivers are monitored. The test results will be discussed, and will help produce the specifications of an integrated SOI-based core-driver with the necessary functionalities to drive an inverter up to 220°C ambient temperature.

Test Results of Sintered Nanosilver Paste Die Attach for High-Temperature Applications

2016 ◽  
Vol 13 (1) ◽  
pp. 6-16 ◽  
Author(s):  
Paul Croteau ◽  
Sayan Seal ◽  
Ryan Witherell ◽  
Michael Glover ◽  
Shashank Krishnamurthy ◽  
...  
Keyword(s):  
High Temperature ◽  
Cooling System ◽  
Wide Band ◽  
Power Converter ◽  
Test Results ◽  
Wide Band Gap ◽  
Strain Behavior ◽  
Die Attach ◽  
Nanosilver Paste ◽  
Sintered Silver

The emergence of wide band gap devices has pushed the boundaries of power converter operations and high power density applications. It is desirable to operate a power inverter at high switching frequencies to reduce passive filter weight and at high temperature to reduce the cooling system requirement. Therefore, materials and components that are reliable at temperatures ranging from −55°C to 200°C, or higher, are needed. Sintered silver is receiving significant attention in the power electronic industry. The porous nature of sintered nanosilver paste with a reduced elastic modulus has the potential to provide strain relief between the die component and substrate while maintaining its relatively high melting point after sintering. The test results presented herein include tensile testing to rupture of sintered silver film to characterize stress-strain behavior, as well as die shear and thermal cyclic tests of sintered silver-bonded silicon die specimens to copper substrates to determine shear strength and reliability.

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Preparation and Characterization of Polyvinylidene Fluoride/ZrO2-TiO2 Optical Film with Wide Band Gap and High Refractive Index

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  
Keyword(s):  
Refractive Index ◽  
Band Gap ◽  
Polyvinylidene Fluoride ◽  
Wide Band ◽  
High Refractive Index ◽  
Wide Band Gap ◽  
Optical Film

Fabrication and characterization of wide band-gap CuGaSe2 thin films for tandem structure

2010 ◽  
Vol 10 (3) ◽  
pp. S395-S398 ◽  
Author(s):  
Soon Il Jung ◽  
Kyung Hoon Yoon ◽  
Sejin Ahn ◽  
Jihye Gwak ◽  
Jae Ho Yun
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Tandem Structure ◽  
Fabrication And Characterization

scholarly journals Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter Joining

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 745
Author(s):  
Dongjin Kim ◽  
Yasuyuki Yamamoto ◽  
Shijo Nagao ◽  
Naoki Wakasugi ◽  
Chuantong Chen ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Heat Dissipation ◽  
Wide Band ◽  
Middle Layer ◽  
Thermal Interface Material ◽  
Wide Band Gap ◽  
Power Cycle ◽  
Power Cycling ◽  
Power Modules ◽  
Pattern Line

This study introduced the SiC micro-heater chip as a novel thermal evaluation device for next-generation power modules and to evaluate the heat resistant performance of direct bonded copper (DBC) substrate with aluminum nitride (AlN-DBC), aluminum oxide (DBC-Al2O3) and silicon nitride (Si3N4-DBC) ceramics middle layer. The SiC micro-heater chips were structurally sound bonded on the two types of DBC substrates by Ag sinter paste and Au wire was used to interconnect the SiC and DBC substrate. The SiC micro-heater chip power modules were fixed on a water-cooling plate by a thermal interface material (TIM), a steady-state thermal resistance measurement and a power cycling test were successfully conducted. As a result, the thermal resistance of the SiC micro-heater chip power modules on the DBC-Al2O3 substrate at power over 200 W was about twice higher than DBC-Si3N4 and also higher than DBC-AlN. In addition, during the power cycle test, DBC-Al2O3 was stopped after 1000 cycles due to Pt heater pattern line was partially broken induced by the excessive rise in thermal resistance, but DBC-Si3N4 and DBC-AlN specimens were subjected to more than 20,000 cycles and not noticeable physical failure was found in both of the SiC chip and DBC substrates by a x-ray observation. The results indicated that AlN-DBC can be as an optimization substrate for the best heat dissipation/durability in wide band-gap (WBG) power devices. Our results provide an important index for industries demanding higher power and temperature power electronics.

Growth and Characterization of Hydrogenated Amorphous Silicon using Liquid Organic Sources

1991 ◽  
Vol 219 ◽  
Author(s):  
K. Gaughan ◽  
S. Hershgold ◽  
J. M. Viner ◽  
P. C. Taylor
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Wide Band ◽  
Discharge Process ◽  
Wide Band Gap ◽  
Silicon Carbon ◽  
Rf Glow Discharge ◽  
Hydrogenated Amorphous

ABSTRACTThe uses of liquid sources such as tertiarybutylphosphine (TBP) for n-type doping in hydrogenated amorphous silicon (a-Si:H) and ditertiarybutylsilane (DTBS) and n-butylsilane (NBS) for hydrogenated amorphous silicon-carbon alloys (a-SiC:H) are described. A rf glow discharge process is employed to produce the doped a-Si:H and a-SiC:H thin films. Tertiarybutylphosphine (TBP) may ultimately be preferred over phosphine because TBP is less toxic, less pyrophoric and safer to implement. The gross doping properties of a-Si:H doped with TBP are the same as those obtained with phosphine, but there are some differences. N-butylsilane (NBS) and DTBS have been used to produce wide band gap (E04 3 ≈ eV) a-SiC:H.

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