scholarly journals Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter Joining

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 745
Author(s):  
Dongjin Kim ◽  
Yasuyuki Yamamoto ◽  
Shijo Nagao ◽  
Naoki Wakasugi ◽  
Chuantong Chen ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Heat Dissipation ◽  
Wide Band ◽  
Middle Layer ◽  
Thermal Interface Material ◽  
Wide Band Gap ◽  
Power Cycle ◽  
Power Cycling ◽  
Power Modules ◽  
Pattern Line

This study introduced the SiC micro-heater chip as a novel thermal evaluation device for next-generation power modules and to evaluate the heat resistant performance of direct bonded copper (DBC) substrate with aluminum nitride (AlN-DBC), aluminum oxide (DBC-Al2O3) and silicon nitride (Si3N4-DBC) ceramics middle layer. The SiC micro-heater chips were structurally sound bonded on the two types of DBC substrates by Ag sinter paste and Au wire was used to interconnect the SiC and DBC substrate. The SiC micro-heater chip power modules were fixed on a water-cooling plate by a thermal interface material (TIM), a steady-state thermal resistance measurement and a power cycling test were successfully conducted. As a result, the thermal resistance of the SiC micro-heater chip power modules on the DBC-Al2O3 substrate at power over 200 W was about twice higher than DBC-Si3N4 and also higher than DBC-AlN. In addition, during the power cycle test, DBC-Al2O3 was stopped after 1000 cycles due to Pt heater pattern line was partially broken induced by the excessive rise in thermal resistance, but DBC-Si3N4 and DBC-AlN specimens were subjected to more than 20,000 cycles and not noticeable physical failure was found in both of the SiC chip and DBC substrates by a x-ray observation. The results indicated that AlN-DBC can be as an optimization substrate for the best heat dissipation/durability in wide band-gap (WBG) power devices. Our results provide an important index for industries demanding higher power and temperature power electronics.

Thermal Resistance Analysis of Sn-Bi Solder Paste Used as Thermal Interface Material for Power Electronics Applications

2014 ◽  
Vol 136 (1) ◽  
Author(s):  
Rui Zhang ◽  
Jian Cai ◽  
Qian Wang ◽  
Jingwei Li ◽  
Yang Hu ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Power Electronics ◽  
Heat Dissipation ◽  
Laser Flash ◽  
Acoustic Microscopy ◽  
Thermal Interface Material ◽  
Solder Paste ◽  
Good Reliability ◽  
Thermal Interface ◽  
Power Modules

To promote heat dissipation in power electronics, we investigated the thermal conduction performance of Sn-Bi solder paste between two Cu plates. We measured the thermal resistance of Sn-Bi solder paste used as thermal interface material (TIM) by laser flash technique, and a thermal resistance less than 5 mm2 K/W was achieved for the Sn-Bi TIM. The Sn-Bi solder also showed a good reliability in terms of thermal resistance after thermal cycling, indicating that it can be a promising candidate for the TIM used for power electronics applications. In addition, we estimated the contact thermal resistance at the interface between the Sn-Bi solder and the Cu plate with the assistance of scanning acoustic microscopy. The experimental data showed that Sn-Bi solder paste could be a promising adhesive material used to attach power modules especially with a large size on the heat sink.

scholarly journals Research on Modelling and Stability Characteristics of Electric Traffic Energy System Based on ZVS-DAB Converter

2020 ◽  
Vol 2020 ◽  
pp. 1-10
Author(s):  
Ayiguzhali Tuluhong ◽  
Weiqing Wang ◽  
Yongdong Li ◽  
Haiyun Wang ◽  
Lie Xu
Keyword(s):  
Mathematical Model ◽  
High Frequency ◽  
Heat Dissipation ◽  
Wide Band ◽  
Energy System ◽  
Wide Band Gap ◽  
Switching Speed ◽  
Zero Voltage Switching ◽  
Conduction Loss ◽  
Dual Active Bridge

We study and describe mostly used traditional simplified circuits for full-bridge Zero Voltage Switching-Dual Active Bridge (ZVS-DAB) converter and deduce their mathematical model. On this basis, we propose a high-frequency (HF) mathematical model, which takes into account conduction loss and HF characteristics of the ZVS-DAB converter model. We compare the static and dynamic stabilities of the traditional and the proposed HF mathematical model by simulation. Finally, the high-frequency planar transformer (HFPT) with good heat dissipation and the wide band gap (WBG) semiconductor SiC switches with fast switching speed are employed to build a 4.4 kw, 40 KHz experimental prototype to verify the effectiveness of the improved HF circuit of ZVS-DAB converter. The results show that the proposed HF mathematical model is superior to the traditional one, and it fully considers the HF characteristics of the circuit and effectively improves the HF oscillation, DC bias, and waveform distortion of the ZVS-DAB converter.

Synthesis of Diamond on SiC by Microwave Plasma Chemical Vapor Deposition: Comparison of Silicon-Face and Carbon-Face

2020 ◽  
Vol 1014 ◽  
pp. 8-13
Author(s):  
Xue Min Zhang ◽  
Chang Ling Yan ◽  
Chun Hong Zeng ◽  
Yi Qun Wang ◽  
Bao Shun Zhang ◽  
...  
Keyword(s):  
Heat Dissipation ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Wide Band ◽  
Performance Limits ◽  
Wide Band Gap ◽  
Sem Images ◽  
Plasma Chemical Vapor Deposition ◽  
Diffraction Peaks ◽  
Growth Quality

Diamond is arguably the best candidate material for heat dissipation applications, especially in high-power electronic devices. Silicon carbide (SiC) is a kind of wide band gap material, which can be used in applications of silicon (Si) components to reach the performance limits. In this paper, thin diamond films were successfully deposited on C-face and Si-face of 6H-SiC substrates respectively using MPCVD at temperatures from 800 to 1050 °C. SEM images indicated the growth quality comparison of the two faces of SiC. The diffraction peaks of the diamond (111), (220), and (311) crystal planes can be observed by XRD measurement, and the intensity of the diamond diffraction peaks grown on the C-face is stronger than that on Si-face. The growth process was analyzed by Raman spectrum. FWHM of diamond Raman spectra on Si-face and C-face are 6.07cm-1 and 5.47cm-1 respectively. All above measurement results show that the diamond grown on the C-face has higher crystal quality than that on Si-face of SiC.

Analysis of Using Ferrofluid as an Interface Material in a Field Reversible Thermal Connector

2015 ◽  
Vol 137 (2) ◽  
Author(s):  
Ahmed S. Yousif ◽  
Gary L. Solbrekken
Keyword(s):  
Heat Transfer ◽  
Thermal Resistance ◽  
Iron Nanoparticles ◽  
Heat Dissipation ◽  
The Other ◽  
Thermal Interface Material ◽  
Heat Transfer Fluid ◽  
University Of Missouri ◽  
Transfer Path ◽  
Current Design

The electrical functionality of an avionics chassis is limited due to heat dissipation limits. The limits arise due to the fact that components in an avionic computer boxes are packed very compactly, with the components mounted onto plug-in cards, and the harsh environment experienced by the chassis limits how heat can be dissipated from the cards. Convective and radiative heat transfer to the ambient are generally not possible. Therefore, it is necessary to have heat transferred from the components conducted to the edge of the plug-in cards. The heat then needs to conduct from the card edge to a cold block that not only holds the card in place but also removes the generated heat by some heat transfer fluid that is circulated through the cold block. The interface between the plug-in card and the cold block typically has a high thermal resistance since it is necessary for the card to have the capability to be reworkable, meaning that the card can be removed and then returned to the chassis. Reducing the thermal resistance of the interface is the objective of the current study and the topic of this thesis. The current design uses a pressure interface between the card and cold block. The contact pressure is increased through the addition of a wedgelock, which is a field-reversible mechanical connector. To use a wedgelock, the cold block has channels milled on the surface with widths that are larger than the thickness of the plug-in card and the unexpanded wedgelock. The card edge is placed in the channel and placed against one of the channel walls. A wedgelock is then placed between the card and the other channel wall. The wedgelock is then expanded by using either a screw or a lever. As the wedgelock expands, it fills in the remaining channel gap and bears against the other face of the plug-in card. The majority of heat generated by the components on the plug-in card is forced to conduct from the card into the wall of the cold block, effectively a single sided, dry conduction heat transfer path. Having started as a student design competition named RevCon Challenge, work was performed to evaluate the use of new field-reversible thermal connectors. The new design proposed by the University of Missouri utilized oil based iron nanoparticles, commonly known as a ferrofluid, as a thermal interface material. By using a liquid type of interface material, the channel gap can be reduced to a few micrometers, within machining tolerances, and heat can be dissipated off both sides of the card. The addition of nanoparticles improves the effective thermal conductivity of base fluid. The use of iron nanoparticles allows magnets to be used to hold the fluid in place, so the electronic cards may be easily inserted and removed while keeping the ferrofluid in the cold block channel. The ferrofluid-based design which was investigated has shown lower thermal resistance than the current wedgelock design. These results open the door for further development of electronic cards by using higher heat emitting components without compromising the simplicity of attaching/detaching cards from cooling plates.

The Design and Evaluation of an Integrated Wire-Bondless Power Module (IWPM) using Low Temperature Co-fired Ceramic Interposer

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000065-000072 ◽  
Author(s):  
Sayan Seal ◽  
Michael D. Glover ◽  
H. Alan Mantooth
Keyword(s):  
High Performance ◽  
High Reliability ◽  
Feasibility Studies ◽  
Wide Band ◽  
Power Devices ◽  
Power Module ◽  
Wide Band Gap ◽  
Fast Switching ◽  
Power Modules ◽  
Wide Band Gap Semiconductors

Abstract This paper presents the plan and initial feasibility studies for an Integrated Wire Bondless Power Module (IWPM). Contemporary power modules are moving toward unprecedented levels of power density. The ball has been set rolling by a drastic reduction in the size of bare die power devices themselves owing to the advent of wide band gap semiconductors like silicon carbide (SiC) and gallium nitride (GaN). SiC has capabilities of operating at much higher temperatures and faster switching speeds as compared with its silicon counterparts, while being a fraction of their size. However, electronic packaging technology has not kept pace with these developments. High performance packaging technologies do exist in isolation, but there has been limited success in integrating these disparate efforts into a single high performance package of sufficient reliability. This paper lays the foundation for an electronic package which is designed to completely leverage the benefits of SiC semiconductor technology, with a focus on high reliability and fast switching capability.

Maximum Resolution of a Probe-Based, Steady-State Thermal Interface Material Characterization Instrument

2016 ◽  
Vol 139 (1) ◽  
Author(s):  
Ronald J. Warzoha ◽  
Andrew N. Smith ◽  
Maurice Harris
Keyword(s):  
Steady State ◽  
Thermal Resistance ◽  
High Performance ◽  
Heat Dissipation ◽  
Thermal Contact ◽  
Thermal Interface Material ◽  
Interfacial Thermal Resistance ◽  
Uniform Heat Flux ◽  
Thermal Probe ◽  
Thermal Interface

Thermal interface materials (TIMs) constitute a critical component for heat dissipation in electronic packaging systems. However, the extent to which a conventional steady-state thermal characterization apparatus can resolve the interfacial thermal resistance across current high-performance interfaces (RT < 1 mm2⋅K/W) is not clear. In this work, we quantify the minimum value of RT that can be measured with this instrument. We find that in order to increase the resolution of the measurement, the thermal resistance through the instrument's reference bars must be minimized relative to RT. This is practically achieved by reducing reference bar length. However, we purport that the minimization of reference bar length is limited by the effects of thermal probe intrusion along the primary measurement pathway. Using numerical simulations, we find that the characteristics of the probes and surrounding filler material can significantly impact the measurement of temperature along each reference bar. Moreover, we find that probes must be spaced 15 diameters apart to maintain a uniform heat flux at the interface, which limits the number of thermal probes that can be used for a given reference bar length. Within practical constraints, the minimum thermal resistance that can be measured with an ideal instrument is found to be 3 mm2⋅K/W. To verify these results, the thermal resistance across an indium heat spring material with an expected thermal contact resistance of ∼1 mm2⋅K/W is experimentally measured and found to differ by more than 100% when compared to manufacturer-reported values.

Enhancement of Interfacial Thermal Transport by Carbon Nanotube-Graphene Junction

2013 ◽  
Author(s):  
Hua Bao ◽  
Shirui Luo ◽  
Ming Hu
Keyword(s):  
Carbon Nanotube ◽  
Thermal Resistance ◽  
Thermal Transport ◽  
Heat Dissipation ◽  
Thermal Conductance ◽  
Thermal Interface Material ◽  
Interfacial Thermal Resistance ◽  
Material Interfaces ◽  
Material Interface ◽  
Dynamics Simulations

Thermal transport across material interfaces is crucial for many engineering applications. For example, in microelectronics, small interfacial thermal resistance is desired to achieve efficient heat dissipation. Carbon nanotube (CNT) has extremely high thermal conductivity and can potentially serve as an efficient thermal interface material. However, heat dissipation through CNTs is limited by the large thermal resistance at the CNT-material interface. Here we have proposed a CNT-graphene junction structure to enhance the interfacial thermal transport. Non-equilibrium molecular dynamics simulations have been carried out to show that the thermal conductance can be significantly enhanced by adding a single graphene layer in between CNT and silicon. The mechanism of enhanced thermal transport is attributed to the efficient thermal transport between CNT and graphene and the good contact between graphene and silicon surface.

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