scholarly journals A Study on Improvement and Degradation of Si/SiO2Interface Property for Gate Oxide with TiN Metal Gate

2008 ◽  
Vol 9 (1) ◽  
pp. 6-11 ◽  
Author(s):  
Byung-Hyun Lee ◽  
Yong-Il Kim ◽  
Bong-Soo Kim ◽  
Dong-Soo Woo ◽  
Yong-Jik Park ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Metal Gate ◽  
Tin Metal

Study of metal gate work function modulation using plasma and SiH4 treated TiN thin films

2003 ◽  
Vol 786 ◽  
Author(s):  
F. Fillot ◽  
S. Maîtrejean ◽  
T. Farjot ◽  
B. Guillaumot ◽  
B. Chenevier ◽  
...  
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Film Growth ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Flat Band ◽  
Metal Gate ◽  
Polysilicon Gate ◽  
Tin Thin Films ◽  
Tin Metal

ABSTRACTAs gate oxide thickness decreases, the capacitance associated with the depleted layer in polysilicon gate becomes significant, making it necessary to consider alternative gate electrodes. Titanium nitride (TiN) films elaborated with TiCl4 precursor is widely studied as metal gate in semi-conductor technology. In this work, a study of TiN metal gate deposited by MOCVD using TDMAT (Tetrakisdimethylamino titanium) precursor is proposed. N2, H2 plasma application and SiH4 treatment after TiN thin film growth modify composition and microstructure. Consequently, they alter the physical properties of films. Such treatments may be a way to modulate work function and thus to control threshold voltage.Metallic layers were deposited in a chamber using a commercial 8 inch wafer deposition tool. In this study, structural and compositional properties of TiN were correlated with work function measurements. Firstly, the composition evolution (carbon content) was studied by AES and SIMS as a function of plasma and SiH4 treatments; XRD gave details on the microstructure. Secondly, MOS structures were processed on uniformly p-type doped wafers. C-V curves of capacitors were used to estimate the flat band voltage (VFB) and gave access to the work function, the effect of oxide fixed charges and the density of interface states. It is shown that as-deposited amorphous films exhibit a work function of 4.4 eV. Exposure to SiH4 is shown to increase this work function of about 150 meV. Thin films properties are not impacted by anneal treatments. Work function stability was tested at 425 °C, 900 °C and 1050 °C. Thermodynamic compatibility with gate oxide was verified thanks to experimental results and calculations.

Atomic Layer Deposition of Zirconium-Based High-k Metal Gate Oxide: Effect of Si Containing Zr Precursor

2015 ◽  
Vol 15 (1) ◽  
pp. 382-385
Author(s):  
Jun Hee Cho ◽  
Sang-Ick Lee ◽  
Jong Hyun Kim ◽  
Sang Jun Yim ◽  
Hyung Soo Shin ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Metal Gate ◽  
Layer Deposition ◽  
High K

Deep insights into electrical parameters due to metal gate WFV for different gate oxide thickness in Si step FinFET

2019 ◽  
Vol 14 (4) ◽  
pp. 384-388
Author(s):  
Rajesh Saha ◽  
Brinda Bhowmick ◽  
Srimanta Baishya
Keyword(s):  
Gate Oxide ◽  
Oxide Thickness ◽  
Electrical Parameters ◽  
Metal Gate ◽  
Gate Oxide Thickness

TiN metal gate thickness influence on Fully Depleted SOI MOSFETs physical and electrical properties

2006 ◽  
Author(s):  
J. Widiez ◽  
M. Vinet ◽  
T. Poiroux ◽  
P. Holliger ◽  
B. Previtali ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Gate ◽  
Fully Depleted ◽  
Tin Metal

Improving gate-oxide reliability by TiN capping layer on NiSi FUSI metal gate

2005 ◽  
Vol 26 (7) ◽  
pp. 458-460 ◽  
Author(s):  
J. Liu ◽  
H.C. Wen ◽  
J.P. Lu ◽  
D.L. Kwong
Keyword(s):  
Gate Oxide ◽  
Metal Gate ◽  
Capping Layer ◽  
Oxide Reliability

Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs

2010 ◽  
Vol 54 (12) ◽  
pp. 1592-1597 ◽  
Author(s):  
M. Rodrigues ◽  
J.A. Martino ◽  
A. Mercha ◽  
N. Collaert ◽  
E. Simoen ◽  
...  
Keyword(s):  
Static Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Metal Gate ◽  
Tin Metal ◽  
The Impact
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