scholarly journals Properties of ZnS1-xFe x thin Films Deposited

2021 ◽  
pp. 1-3
Author(s):  
Jafarli Rufat ◽  
Keyword(s):  
Thin Films ◽  
Aqueous Solution ◽  
Substrate Temperature ◽  
Optical Band Gap ◽  
Visible Region ◽  
Hexagonal Structure ◽  
Solution Technique ◽  
Optical Parameters ◽  
Glass Substrates ◽  
Xrd Study

Semiconducting ZnS1-xFex thin films were prepared with different substrate temperature on glass substrates from aqueous solution technique. ZnS1-xFex films were prepared, using a aqueous solution containing ethyleneglycol, zinc chloride and sulphur. XRD study shows that the aqueous deposited ZnS1-xFex thin films are polycrystalline hexagonal structure. The effect of Fe concentration on the optical parameters such as absorption coefficient, refractive index, dielectric function, optical conductivity, and reflectivity is also investigated. Results revealed that Cd1-xFexS is a suitable compound for spintronics and optoelectronics devices. A good optical transparency of about 75% in the visible region is observed for all prepared ZnS1-xFex thin films. The direct optical band gap of the deposited ZnS1-xFex thin films with different substrate temperature (380°C – 530°C) were lying in the range 3.27–3.35 eV.

scholarly journals Effect of thickness on the optical properties of Gaas thin films

2013 ◽  
Vol 37 (1) ◽  
pp. 83-91 ◽  
Author(s):  
Chitra Das ◽  
Jahanara Begum ◽  
Tahmina Begum ◽  
Shamima Choudhury
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Band Gap ◽  
Optical Band Gap ◽  
Visible Region ◽  
Solar Spectrum ◽  
Band Gap Energy ◽  
Optical Parameters ◽  
Gap Energy

Effect of thickness on the optical and electrical properties of gallium arsenide (GaAs) thin films were studied. The films of different thicknesses were prepared by vacuum evaporation method (~10-4 Pa) on glass substrates at a substrate temperature of 323 K. The film thickness was measured in situ by a frequency shift of quartz crystal. The thicknesses were 250, 300 and 500 nm. Absorption spectrum of this thin film had been recorded using UV-VIS-NIR spectrophotometer in the photon wavelength range of 300 - 2500 nm. The values of some important optical parameters of the studied films (absorption coefficient, optical band gap energy and refractive index; extinction co-efficient and real and imaginary parts of dielectric constant) were determined using these spectra. Transmittance peak was observed in the visible region of the solar spectrum. Here transmittance showed better result when thicknesses were being increased. The optical band gap energy was decreased by the increase of thickness. The refractive index increased by increasing thickness while extinction co-efficient and real and imaginary part of dielectric constant decreased. DOI: http://dx.doi.org/10.3329/jbas.v37i1.15684 Journal of Bangladesh Academy of Sciences, Vol. 37, No. 1, 83-91, 2013

STUDY OF CHEMICAL BATH DEPOSITION OF ZnS THIN FILMS WITH SUBSTRATE VIBRATION

2008 ◽  
Vol 15 (06) ◽  
pp. 821-827 ◽  
Author(s):  
Z. Q. BIAN ◽  
X. B. XU ◽  
J. B. CHU ◽  
Z. SUN ◽  
Y. W. CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Hydrazine Hydrate ◽  
Chemical Bath Deposition ◽  
Visible Region ◽  
Hexagonal Structure ◽  
Complexing Agents ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Alkaline Conditions ◽  
Zns Films

An improved chemical bath deposition (CBD) technique has been provided to prepare zinc sulfide ( ZnS ) thin films on glass substrates deposited at 80–82°C using a mixed aqueous solution of zinc sulfate, ammonium sulfate, thiourea, hydrazine hydrate, and ammonia at the alkaline conditions. Both the traditional magnetic agitation and the substrates vibration by hand frequently were done simultaneously during the deposition. The substrates vibration reduced the formation and residence of gas bubbles on the glass substrates during growth and resulted in growth of clean ZnS thin films with high quality. Ammonia and hydrazine hydrate were used as complexing agents. It is found that hydrazine hydrate played an important role in growth of ZnS films. The structure and microstructure of ZnS films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-vis spectroscopic methods. The XRD showed a hexagonal structure. The formed ZnS films exhibited good optical properties with high transmittance in the visible region and the band gap value was estimated to be 3.5–3.70 eV.

Electrical and Optical Properties of ZnO-Doped Zr0.8Sn0.2TiO4 Thin Films on ITO/Glass Substrates by RF Magnetron Sputtering

2011 ◽  
Vol 687 ◽  
pp. 70-74
Author(s):  
Cheng Hsing Hsu ◽  
His Wen Yang ◽  
Jenn Sen Lin
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Ito Glass

Electrical and optical properties of 1wt% ZnO-doped (Zr0.8Sn0.2)TiO4thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different rf power and substrate temperature were investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the deposition conditions, such as rf power and substrate temperature. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. Optical transmittance spectroscopy further revealed high transparency (over 60%) in the visible region of the spectrum.

Effect of Annealing on the Structural Electrical and Optical Properties of CdSe Thin Films

2018 ◽  
Vol 24 (8) ◽  
pp. 5700-5702
Author(s):  
T. C. M Santhosh ◽  
Kasturi V Bangera ◽  
G. K Shivakumar
Keyword(s):  
Thin Films ◽  
Optical Band Gap ◽  
Hexagonal Structure ◽  
Annealing Duration ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Post Deposition ◽  
Absorption Measurements

CdSe thin films have been deposited on glass substrates at 453 K and subjected to post-deposition annealing. The effect of annealing on the properties of thermally evaporated CdSe thin films has been studied in detail. Structural and compositional studies have been carried out using X-ray diffraction, scanning electron microscopy (SEM) and energy dispersive analysis of X-ray (EDX) techniques. It is observed that as-deposited CdSe as well as annealed CdSe thin films exhibits hexagonal structure. The grain size was found to increase marginally with an increase in the annealing duration. The optical band gap of the grown films was evaluated from absorption measurements found to be 1.67 eV. An improvement in photoconductivity has been observed for annealed films.

Influence of Substrate Temperature on Silicon Nitride Films Deposited by R.F. Magnetron Sputtering

2010 ◽  
Vol 150-151 ◽  
pp. 1391-1395 ◽  
Author(s):  
Feng Gao ◽  
Qing Nan Zhao ◽  
Xiu Jian Zhao ◽  
Yu Hong Dong
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Atomic Ratio ◽  
X Ray ◽  
Glass Substrates ◽  
Silicon Nitride Films ◽  
Influence Of Substrate

Silicon Nitride thin films were deposited on glass substrates by r.f. magnetron sputtering with a mixture gas of N2 and Ar. The properties of the thin films vs substrate temperature have been investigated. The phase structure, surface morphology, chemical composition, thickness and optical properties of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS), ultraviolet-visible spectroscopy (UV-Vis) and nkd-system spectrophotometer. The results show that the films appear amorphous and crystalline structure at the substrate temperature of 20 and 300 , respectively, the atomic ratio of Si to N of the films is nearly 1:1, the transmittance in the ultraviolet-visible region is above 75%; with increasing substrate temperature the refractive index and the optical band gap increase, and the deposition rates of the films decreases.

Substrate Temperature Effect on Structural and Optical Properties of ZnO Thin Films Deposited by Spray Pyrolysis

2019 ◽  
Vol 397 ◽  
pp. 1-7
Author(s):  
Hassene Nezzari ◽  
Riad Saidi ◽  
Adel Taabouche ◽  
Meriem Messaoudi ◽  
Mohamed Salah Aida
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Hexagonal Structure ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Glass Substrates ◽  
Uv Visible ◽  
Heated Glass

In this work, ZnO thin films grown on heated glass substrates in a temperature range of 300 to 500 °C with a 50°C step. The prepared solution is composed of methanol and zinc acetate Zn(CH3COO)2.2H2O. ZnO thin films are deposited by pyrolysis spray technique, our work focuses on the study of the substrate temperature influence on the structural and optical properties of these layers. Therefore, The X-ray diffraction, showed a Wurtzit hexagonal structure of elaborated films, with (002) as a preferred orientation, and a grain size of 64 to 74 nm. The optical transmission spectroscopy UV-Visible, illustrated an increase of optical band gap from 3.19 to 3.25 eV, proportionally with the substrate temperature.

scholarly journals Effect of Substrate Temperature on the Optical and Electrical Properties of Nitrogen-Doped NiO Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 634 ◽  
Author(s):  
Yuan Tian ◽  
Lianguo Gong ◽  
Xueqian Qi ◽  
Yibiao Yang ◽  
Xiaodan Zhao
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Visible Region ◽  
Bandgap Energy ◽  
Optical And Electrical Properties ◽  
Glass Substrates ◽  
Type Semiconductor ◽  
Influence Of Substrate ◽  
Application Fields

NiO is a widely used p-type semiconductor. The desired optical and electrical properties of NiO vary in different application fields. To modulate the properties of NiO, nitrogen (N)-doped NiO thin films were synthesized by reactive radio-frequency magnetron sputtering on ITO-coated glass substrates. The influence of substrate temperature on the properties of NiO was investigated. XRD studies indicated a cubic structure. With the increase of the substrate temperature, the average transmittance in the visible region gradually reduced from 90% to 50%. The bandgap energy narrowed from 3.5 to 3.08 eV. The intensity of the PL spectra weakened, and the electrical conductivity rose. Overall, changing the substrate temperature is an effective method to modulate the optical and electrical properties of N-doped NiO thin films.

scholarly journals Studies on the Optical Properties and Surface Morphology of Cobalt Phthalocyanine Thin Films

2008 ◽  
Vol 5 (1) ◽  
pp. 86-92 ◽  
Author(s):  
Benny Joseph ◽  
C. S. Menon
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Band Gap ◽  
Optical Band Gap ◽  
Cobalt Phthalocyanine ◽  
Scanning Electron Micrographs ◽  
Glass Substrates ◽  
Substrate Temperatures ◽  
Scanning Electron

Thin films of Cobalt Phthalocyanine (CoPc) are fabricated at a base pressure of 10-5m.bar using Hind-Hivac thermal evaporation plant. The films are deposited on to glass substrates at various temperatures 318, 363, 408 and 458K. The optical absorption spectra of these thin films are measured. The present studies reveal that the optical band gap energies of CoPc thin films are almost same on substrate temperature variation. The structure and surface morphology of the films deposited on glass substrates of temperatures 303, 363 and 458K are studied using X-ray diffractograms and Scanning Electron Micrographs (SEM), which show that there is a change in the crystallinity and surface morphology due to change in the substrate temperatures. Full width at half maximum (FWHM) intensity of the diffraction peaks is also found reduced with increasing substrate temperatures. Scanning electron micrographs show that these crystals are needle like, which are interconnected at high substrate temperatures. The optical band gap energy is almost same on substrate temperature variation. Trap energy levels are also observed for these films.

Sol-gel growth of Ni doped CdS on glass substrates: effect of spin coating speed and dopant concentration

2020 ◽  
Vol 10 ◽  
Author(s):  
Atefeh Nazari Setayesh ◽  
Hassan Sedghi
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spin Coating ◽  
Optical Band Gap ◽  
Dopant Concentration ◽  
Rotation Speed ◽  
Sol Gel ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Glass Substrates

Background: In this work, CdS thin films were synthesized by sol-gel method (spin coating technique) on glass substrates to investigate the optical behavior of the film. Methods: Different substrate spin coating speeds of 2400, 3000, 3600 rpm and different Ni dopant concentrations of 0 wt.%, 2.5 wt.%, 5 wt.%) were investigated. The optical properties of thin films such as refraction index, extinction coefficient, dielectric constant and optical band gap energy of the layers were discussed using spectroscopic ellipsometry method in the wavelength range of 300 to 900 nm. Results: It can be deduced that substrate rotation speed and dopant concentration has influenced the optical properties of thin films. By decreasing rotation speed of the substrate which results in films with more thicknesses, more optical interferences were appeared in the results. Conclusion: The samples doped with Ni comparing to pure ones have had more optical band gap energy.

Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Hexagonal Structure ◽  
Optical And Electrical Properties ◽  
Axis Orientation ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sn Doping ◽  
Glass Substrates

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.

Sign in / Sign up

Export Citation Format

Share Document