scholarly journals EFFECT OF MOLARCONCENTRATION OF PRECURSORSON THE STRUCTURAL, OPTICALAND ELECTRICAL PROPERTIES OF CUALS2 THIN FILMS PREPARED BY CHEMICAL BATH DEPOSITION TECHNIQUE

2021 ◽  
Vol 03 (03) ◽  
pp. 92-102
Author(s):  
Bilal Y. TAHER ◽  
Ahmad S. AHMAD
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Chemical Bath Deposition ◽  
Ph Value ◽  
Substrate Surface ◽  
Concentration Field ◽  
Molar Concentration ◽  
Ultraviolet Region ◽  
Average Grain Size ◽  
Deposited Films

CuAlS2 thin films have been prepared on glass substrates by Chemical bath deposition (CBD) technique at a substrate temperature (Ts) 75C, pH value 10.5.The Effect of three different molar concentration (0.05, 0.025, 0.1), (0.075, 0.0375, 0.15), and (0.1, 0.05, 0.2) M of precursors of (CuSO4.5H2O, Al2(SO4)3.16H2O, and (NH2)2CS), respectively on the structural, optical and electrical properties of deposit thin films was studied. The X-ray diffraction (XRD) patterns showed that the films have an amorphous structure with simple enhancement in the structure of the films with the higher molar concentration. Field emission scanning electron microscopy (FESEM) analysis of thin films showed that the deposited films were a good surface morphology, homogenous and uniform spherical nanoparticles over the substrate surface with very little agglomerated particles with average grain size in the range (45 to 72 nm) increase with increasing molar concentration of precursors. Atomic force microscopy (AFM) showed the topography of deposited films has nanoparticles with structures like conical and lobes shape, with the average grain sizes, root mean square (rms) roughness, and surface roughness increase with increasing molar concentration of precursors. The optical analysis by UV-Vis Spectrophotometer showed high absorption in the ultraviolet region, with absorption edge and direct energy gaps (3.5 to 4eV) variedat different molar concentrations of precursors. The electrical results from Hall effect measurements showed that the values of resistivity, conductivity, mobility, and carrier concentration were varied in range (0.046 to 0.594ohm.cm), (1.86 to 21.7(ohm.cm)-1), (301to 1510 cm2/V.S), and (3.29×1016 to 1.46×1017 cm-3), respectively .Also,n-type conductivity was investigated for all prepared film sat different molar concentration of precursors. The obtained results of the prepared CuAlS2 thin films can be suitable in many optoelectronics applications.

Structure and Electrical Properties of Pulsed Laser Deposited Amorphous Carbon Nitride Thin Films

2002 ◽  
Vol 750 ◽  
Author(s):  
Yoshifumi Aoi ◽  
Kojiro Ono ◽  
Kunio Sakurada ◽  
Eiji Kamijo
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Film Surface ◽  
Input Power ◽  
Localized States ◽  
Active Nitrogen ◽  
Deposited Films

ABSTRACTAmorphous CNx thin films were deposited by pulsed laser deposition (PLD) combined with a nitrogen rf radical beam source which supplies active nitrogen species to the growing film surface. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman scattering, and Fourier transform infrared (FTIR) spectroscopy. Nitrogen content of the deposited films increased with increasing rf input power and N2 pressure in the PLD chamber. The maximum N/C ratio 0.23 was obtained at 400 W of rf input power and 1.3 Pa. XPS N 1s spectra shows the existence of several bonding structures in the deposited films. Electrical properties of the deposited films were investigated. The electrical conductivity decreased with increasing N/C atomic ratio. Temperature dependence of electrical conductivity measurements indicated that electronic conduction occurred by variable-range hopping between p electron localized states.

Influence of Substrate Temperature on Structural and Optical Properties of Co-Evaporated Cu2SnS3/ITO Thin Films

2022 ◽  
Vol 1048 ◽  
pp. 189-197
Author(s):  
Tippasani Srinivasa Reddy ◽  
M.C. Santhosh Kumar
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Nir Spectroscopy ◽  
Stoichiometric Ratio ◽  
Tin Sulfide ◽  
Structural And Optical Properties ◽  
Average Grain Size ◽  
Deposited Films

In this study report the structural and optical properties of Copper Tin Sulfide (Cu2SnS3) thin films on indium tin oxide (ITO) substrate using co-evaporation technique. High purity of copper, tin and sulfur were taken as source materials to deposit Cu2SnS3 (CTS) thin films at different substrate temperatures (200-350 °C). Further, the effect of different substrate temperature on the crystallographic, morphological and optical properties of CTS thin films was investigated. The deposited CTS thin films shows tetragonal phase with preferential orientation along (112) plane confirmed by X-ray diffraction. Micro-Raman studies reveled the formation of CTS thin films. The surface morphology, average grain size and rms values of the deposited films are examined by Scanning electron spectroscopy (SEM) and Atomic Force Microscopy (AFM). The Energy dispersive spectroscopy (EDS) shows the presence of copper, tin and sulfur with a nearly stoichiometric ratio. The optical band gap (1.76-1.63 eV) and absorption coefficient (~105 cm-1) of the films was calculated by using UV-Vis-NIR spectroscopy. The values of refractive index, extinction coefficient and permittivity of the deposited films were calculated from the optical transmittance data.

scholarly journals STRUCTURAL AND ELECTRICAL PROPERTIES OF TANTALUM PENTAOXIDE (Ta2O5) THIN FILMS – A REVIEW

2013 ◽  
Vol 22 ◽  
pp. 564-569
Author(s):  
KANTA RATHEE ◽  
B. P. MALIK
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Metal Oxide ◽  
High Dielectric Constant ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Structural And Electrical Properties ◽  
High Dielectric ◽  
Deposited Films

Down scaling of complementary metal oxide semiconductor transistors has put limitations on silicon dioxide to be used as an effective dielectric. It is necessary to replace the SiO 2 with a physically thicker layer of oxides of high dielectric constant. Thus high k dielectrics are used to suppress the existing challenges for CMOS scaling. Many new oxides are being evaluated as gate dielectrics such as Ta2O5 , HfO2 , ZrO2 , La2O3 , HfO2 , TiO2 , Al2O3 , Y2O3 etc but it was soon found that these oxides in many respects have inferior electronic properties to SiO2 . But the the choice alone of suitable metal oxide with high dielectric constant is not sufficient to overcome the scaling challenges. The various deposition techniques and the conditions under which the thin films are deposited plays important role in deciding the structural and electrical properties of the deposited films. This paper discusses in brief the various deposition conditions which are employed to improve the structural and electrical properties of the deposited films.

scholarly journals Cadmium Sulfide Thin Films Deposited onto MWCNT/Polysulfone Substrates by Chemical Bath Deposition

2016 ◽  
Vol 2016 ◽  
pp. 1-10 ◽  
Author(s):  
M. Moreno ◽  
G. M. Alonzo-Medina ◽  
A. I. Oliva ◽  
A. I. Oliva-Avilés
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Cadmium Sulfide ◽  
Chemical Bath Deposition ◽  
Multiwall Carbon Nanotubes ◽  
Low Concentrations ◽  
Average Grain Size ◽  
Cds Thin Films ◽  
Current Electric Field

Cadmium sulfide (CdS) thin films were deposited by chemical bath deposition (CBD) onto polymeric composites with electric field-aligned multiwall carbon nanotubes (MWCNTs). MWCNT/polysulfone composites were prepared by dispersing low concentrations of MWCNTs within dissolved polysulfone (PSF). An alternating current electric field was “in situ” applied to align the MWCNTs within the dissolved polymer along the field direction until the solvent was evaporated. 80 μm thick solid MWCNT/PSF composites with an electrical conductivity 13 orders of magnitude higher than the conductivity of the neat PSF were obtained. The MWCNT/PSF composites were subsequently used as flexible substrates for the deposition of CdS thin films by CBD. Transparent and adherent CdS thin films with an average thickness of 475 nm were obtained. The values of the energy band gap, average grain size, rms roughness, crystalline structure, and preferential orientation of the CdS films deposited onto the polymeric substrate were very similar to the corresponding values of the CdS deposited onto glass (conventional substrate). These results show that the MWCNT/PSF composites with electric field-tailored MWCNTs represent a suitable option to be used as flexible conducting substrate for CdS thin films, which represents an important step towards the developing of flexible systems for photovoltaic applications.

Synthesis of Nanocrystalline 0.94Bi0.5Na0.5TiO3-0.06BaTiO3 Powder by a Citrate Method

2008 ◽  
Vol 368-372 ◽  
pp. 103-105
Author(s):  
Zhi Bin Tian ◽  
Xiao Hui Wang ◽  
Ji Li ◽  
Wei Zhao ◽  
Long Tu Li
Keyword(s):  
Grain Size ◽  
Electrical Properties ◽  
Traditional Method ◽  
Sintering Temperature ◽  
Ph Value ◽  
Precursor Solution ◽  
Milling Process ◽  
Citrate Method ◽  
Nano Powder ◽  
Average Grain Size

A citrate method to synthesize 0.94Bi0.5Na0.5TiO3-0.06BaTiO3 nano-powder was studied. The stable gel was obtained by the control of the pH value and temperature of the precursor solution. The BNBT nano-powder was produced after calcining the xerogel at 600°C~800°C. The average grain size of the powder calcined at 700°C for 3 h is 50 nm, and the grain size of the ceramic sintered at 1080°C is 0.7 μm. The sintering temperature used is 100°C lower than the BNBT ceramic prepared by traditional method, but the electrical properties were comparable. In addition, it was found that the ball-milling process has important effect on the morphology of the ceramics and the orientation crystals were eliminated due to the disintegration of agglomerates during milling.

EFFECTS OF SODIUM CITRATE AND CURRENT DENSITY ON ELECTROPLATED NANOCRYSTALLINE COBALT-IRON THIN FILMS

2012 ◽  
Vol 05 ◽  
pp. 696-703 ◽  
Author(s):  
BEHTAM ADELI ◽  
MAHMOUD HYDARZADEH SOHI ◽  
SAEED MEHRIZI
Keyword(s):  
Thin Films ◽  
Current Density ◽  
Iron Content ◽  
Sodium Citrate ◽  
Cobalt Content ◽  
Limiting Current ◽  
Lattice Constants ◽  
Average Grain Size ◽  
Scherrer Formula ◽  
Deposited Films

Effects of sodium citrate dosage and current density on composition and phase structure of nanocrystalline CoFe thin films were systematically studied. Energy dispersive spectroscopy (EDS) showed when sodium citrate dosage in the bath was less than 10 g/L, with increasing citrate in the bath, iron content in the deposited films remarkably decreased. However, sodium citrate dosage more than 20 g/L had no effect on composition of the deposited films. In low current densities, cobalt content decreases and iron content increases, as the current density increases. The current density of 15 ma/cm2 could be considered as alloy limiting current density. The XRD analyses showed that only BCC and/or FCC formed in the deposited films and average grain size, estimated by Scherrer formula, were below 55 nm. The results indicated that phase formation in the electrodeposition of CoFe deviated from equilibrium conditions and was controlled by kinetic conditions. The lattice constants for BCC and FCC phases in CoFe films were close to those of BCC iron and FCC cobalt, respectively.

Low-Temperature Processing Using Triple Alkoxide Precursors for Layer-Structured Perovskite Thin Films: Preparation and Characterization of Mbi2Ta2O9 (M: Ca or Ba) Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
K. Kato
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Low Temperature ◽  
Surface Topography ◽  
Annealing Temperature ◽  
Low Temperature Processing ◽  
Deposited Films ◽  
Alkoxide Precursors

AbstractCaBi2Ta2O9 and BaBi2Ta2O9 thin films were successfully prepared by using triple alkoxide precursors such as Ca[BiTa(OC2H5)9]2 and Ba[BiTa(OC2H5)9]2, respectively. As-deposited films were amorphous and crystallized below 500°C by rapid thermal annealing in oxygen. The crystallinity improved with annealing temperature. The development of the crystal structure and surface topography of the thin films were investigated. Additionally, some electrical properties were evaluated.

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