A Study on the Electrical Breakdown Characteristics of PPLP According to PP Ratio

2021 ◽  
Vol 35 (11) ◽  
pp. 44-48
Author(s):  
Younghun Park ◽  
Seunghee O ◽  
Dewimaruto Ratri ◽  
Bimaridi Afif ◽  
Hyoungku Kang
Keyword(s):  
Electrical Breakdown

Scanning Electron Microscope Induced Electrical Breakdown of Tungsten Windows in Integrated Circuit Processing

2004 ◽  
Author(s):  
David M. Shuttleworth ◽  
Mary Drummond Roby
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Contact Resistance ◽  
Integrated Circuit ◽  
Electrical Breakdown ◽  
Scanning Electron ◽  
Integrated Circuit Processing

Abstract Interaction of inline SEM inspections with tungsten window-1 integrity were investigated. Multiple SEMs were utilized and various points in the processing were inspected. It was found that in certain circumstances inline SEM inspection induced increased window-1 contact resistance in both source/drain and gate contacts, up to and including electrical opens for the source/drain contacts.

scholarly journals Electrical Breakdown Mechanism of Transformer Oil with Water Impurity: Molecular Dynamics Simulations and First-Principles Calculations

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 123
Author(s):  
Bin Cao ◽  
Ji-Wei Dong ◽  
Ming-He Chi
Keyword(s):  
Molecular Dynamics ◽  
Thermal Diffusion ◽  
First Principles ◽  
Electrical Breakdown ◽  
Transformer Oil ◽  
Water Molecules ◽  
Conducting Channel ◽  
Breakdown Mechanism ◽  
Water Impurity ◽  
Dynamics Simulations

Water impurity is the essential factor of reducing the insulation performance of transformer oil, which directly determines the operating safety and life of a transformer. Molecular dynamics simulations and first-principles electronic-structure calculations are employed to study the diffusion behavior of water molecules and the electrical breakdown mechanism of transformer oil containing water impurities. The molecular dynamics of an oil-water micro-system model demonstrates that the increase of aging acid concentration will exponentially expedite thermal diffusion of water molecules. Density of states (DOS) for a local region model of transformer oil containing water molecules indicates that water molecules can introduce unoccupied localized electron-states with energy levels close to the conduction band minimum of transformer oil, which makes water molecules capable of capturing electrons and transforming them into water ions during thermal diffusion. Subsequently, under a high electric field, water ions collide and impact on oil molecules to break the molecular chain of transformer oil, engendering carbonized components that introduce a conduction electronic-band in the band-gap of oil molecules as a manifestation of forming a conductive region in transformer oil. The conduction channel composed of carbonized components will be eventually formed, connecting two electrodes, with the carbonized components developing rapidly under the impact of water ions, based on which a large number of electron carriers will be produced similar to “avalanche” discharge, leading to an electrical breakdown of transformer oil insulation. The water impurity in oil, as the key factor for forming the carbonized conducting channel, initiates the electric breakdown process of transformer oil, which is dominated by thermal diffusion of water molecules. The increase of aging acid concentration will significantly promote the thermal diffusion of water impurities and the formation of an initial conducting channel, accounting for the degradation in dielectric strength of insulating oil containing water impurities after long-term operation of the transformer.

scholarly journals GaN-Based PCSS with High Breakdown Fields

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1600
Author(s):  
Matthew Gaddy ◽  
Vladimir Kuryatkov ◽  
Nicholas Wilson ◽  
Andreas Neuber ◽  
Richard Ness ◽  
...  
Keyword(s):  
Active Region ◽  
High Voltage ◽  
Electrical Breakdown ◽  
Base Material ◽  
Hydride Vapor Phase Epitaxy ◽  
Switching Behavior ◽  
Breakdown Field ◽  
Organic Chemical ◽  
Mesa Structure ◽  
Gap Spacing

The suitability of GaN PCSSs (photoconductive semiconductor switches) as high voltage switches (>50 kV) was studied using a variety of commercially available semi-insulating GaN wafers as the base material. Analysis revealed that the wafers’ physical properties were noticeably diverse, mainly depending on the producer. High Voltage PCSSs were fabricated in both vertical and lateral geometry with various contacts, ohmic (Ti/Al/Ni/Au or Ni/Au), with and without a conductive n-GaN or p-type layer grown by metal-organic chemical vapor deposition. Inductively coupled plasma (ICP) reactive ion etching (RIE) was used to form a mesa structure to reduce field enhancements allowing for a higher field to be applied before electrical breakdown. The length of the active region was also varied from a 3 mm gap spacing to a 600 µm gap spacing. The shorter gap spacing supports higher electric fields since the number of macro defects within the device’s active region is reduced. Such defects are common in hydride vapor phase epitaxy grown samples and are likely one of the chief causes for electrical breakdown at field levels below the bulk breakdown field of GaN. Finally, the switching behavior of PCSS devices was tested using a pulsed, high voltage testbed and triggered by an Nd:YAG laser. The best GaN PCSS fabricated using a 600 µm gap spacing, and a mesa structure demonstrated a breakdown field strength as high as ~260 kV/cm.

scholarly journals Delayed Discharge Bridging Two Sputtering Modes from Modulated Pulsed Power Magnetron Sputtering (MPPMS) to Deep Oscillation Magnetron Sputtering (DOMS)

Plasma ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 239-251
Author(s):  
Masaomi Sanekata ◽  
Hiroshi Nishida ◽  
Tatsuya Watabe ◽  
Yuki Nakagomi ◽  
Yoshihiro Hirai ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Discharge Current ◽  
Electrical Breakdown ◽  
Pulsed Power ◽  
Current Waveform ◽  
Delayed Discharge ◽  
Plot Analysis ◽  
Delay Times ◽  
Discharge Behavior ◽  
Delayed Discharges

Delayed discharges due to electrical breakdown are observed in modulated pulsed pow er magnetron sputtering (MPPMS) plasma of titanium. The delayed discharge, which is remarkable with decreasing argon gas pressure, transforms the discharge current waveform from a standard modulated pulsed discharge current waveform to a comb-like discharge current waveform consisting of several pulses with high power. In addition, the delay times, consisting of statistical times and formative times in the delayed MPPMS discharges, are experimentally measured with the help of Laue plot analysis. The pressure dependence of delay times observed indicates that the delayed discharge behavior matches the breakdown characteristics well. In the present study, the delayed discharge dynamics of the comb-like discharge current waveform, which can be the origin of deep oscillation magnetron sputtering, are investigated based on measurement of the delay times and the characteristics of discharge current waveforms.

On the Mechanism of High-Voltage Pulsed Fragmentation from Electrical Breakdown Process

2021 ◽  
Author(s):  
Xiaohua Zhu ◽  
Yunxu Luo ◽  
Weiji Liu ◽  
Ling He ◽  
Rui Gao ◽  
...  
Keyword(s):  
High Voltage ◽  
Electrical Breakdown ◽  
Breakdown Process

The influence of mechanical properties in the electrical breakdown in poly-styrene-ethylene-butadiene-styrene thermoplastic elastomer

2009 ◽  
Author(s):  
Matthias Kollosche ◽  
Michael Melzer ◽  
Andre Becker ◽  
Hristian Stoyanov ◽  
Denis N. McCarthy ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Electrical Breakdown ◽  
Thermoplastic Elastomer ◽  
Butadiene Styrene
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