A Wide-gain-range Intermediate Frequency Integrated Circuit for a Superheterodyne Receiver

2018 ◽  
Vol 18 (4) ◽  
pp. 525-535
Author(s):  
Changchun Zhang ◽  
Jingjian Zhang ◽  
Ying Zhang ◽  
Yi Zhang ◽  
Jie Liu ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Intermediate Frequency ◽  
Superheterodyne Receiver

scholarly journals A 5G C-RAN Optical Fronthaul Architecture for Hotspot Areas Using OFDM-Based Analog IFoF Waveforms

2019 ◽  
Vol 9 (19) ◽  
pp. 4059 ◽  
Author(s):  
Charoula Mitsolidou ◽  
Christos Vagionas ◽  
Agapi Mesodiakaki ◽  
Pavlos Maniotis ◽  
George Kalfas ◽  
...  
Keyword(s):  
Wavelength Division Multiplexing ◽  
Integrated Circuit ◽  
Orthogonal Frequency Division Multiplexing ◽  
Access Network ◽  
Intermediate Frequency ◽  
Error Vector Magnitude ◽  
Photonic Integrated Circuit ◽  
Wavelength Division ◽  
High Data ◽  
Radio Access

Analog fronthauling is currently promoted as a bandwidth and energy-efficient solution that can meet the requirements of the Fifth Generation (5G) vision for low latency, high data rates and energy efficiency. In this paper, we propose an analog optical fronthaul 5G architecture, fully aligned with the emerging Centralized-Radio Access Network (C-RAN) concept. The proposed architecture exploits the wavelength division multiplexing (WDM) technique and multicarrier intermediate-frequency-over-fiber (IFoF) signal generation per wavelength in order to satisfy the demanding needs of hotspot areas. Particularly, the fronthaul link employs photonic integrated circuit (PIC)-based WDM optical transmitters (Txs) at the baseband unit (BBU), while novel reconfigurable optical add-drop multiplexers (ROADMs) cascaded in an optical bus are used at the remote radio head (RRH) site, to facilitate reconfigurable wavelength switching functionalities up to 4 wavelengths. An aggregate capacity of 96 Gb/s has been reported by exploiting two WDM links carrying multi-IF band orthogonal frequency division multiplexing (OFDM) signals at a baud rate of 0.5 Gbd with sub-carrier (SC) modulation of 64-QAM. All signals exhibited error vector magnitude (EVM) values within the acceptable 3rd Generation Partnership Project (3GPP) limits of 8%. The longest reach to place the BBU away from the hotspot was also investigated, revealing acceptable EVM performance for fiber lengths up to 4.8 km.

A G-band cryogenic MMIC heterodyne receiver module for astronomical applications

2012 ◽  
Vol 4 (3) ◽  
pp. 283-289 ◽  
Author(s):  
Patricia Voll ◽  
Lorene Samoska ◽  
Sarah Church ◽  
Judy M. Lau ◽  
Matthew Sieth ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Second Harmonic ◽  
Block Design ◽  
Noise Temperature ◽  
High Electron Mobility Transistor ◽  
Intermediate Frequency ◽  
Local Oscillator ◽  
High Electron ◽  
Heterodyne Receiver ◽  
Receiver Module

We report cryogenic noise temperature and gain measurements of a prototype heterodyne receiver module designed to operate in the atmospheric window centered on 150 GHz. The module utilizes monolithic microwave integrated circuit (MMIC) InP high electron mobility transistor (HEMT) amplifiers, a second harmonic mixer, and bandpass filters. Swept local oscillator (LO) measurements show an average gain of 22 dB and an average noise temperature of 87 K over a 40 GHz band from 140 to 180 GHz when the module is cooled to 22 K. A spot noise temperature of 58 K was measured at 166 GHz and is a record for cryogenic noise from HEMT amplifiers at this frequency. Intermediate frequency (IF) sweep measurements show a 20 GHz IF band with less than 94 K receiver noise temperature for a fixed LO of 83 GHz. The compact housing features a split-block design that facilitates quick assembly and a condensed arrangement of the MMIC components and bias circuitry. DC feedthroughs and nano-miniature connectors also contribute to the compact design, so that the dimensions of the moduleare approximately 2.5 cm per side.

A homodyne transceiver MMIC using SiGe:C technology for 60 GHz wireless applications

2011 ◽  
Vol 3 (2) ◽  
pp. 147-155 ◽  
Author(s):  
Hans Peter Forstner ◽  
Markus Ortner ◽  
Ludger Verweyen ◽  
Herbert Knapp
Keyword(s):  
Integrated Circuit ◽  
Noise Figure ◽  
Intermediate Frequency ◽  
Maximum Output ◽  
Voltage Controlled Oscillator ◽  
60 Ghz ◽  
Monolithic Integrated Circuit ◽  
Fully Differential ◽  
Operational Frequency ◽  
On Chip

A highly integrated transceiver microwave monolithic integrated circuit (MMIC) manufactured in a 200-GHz SiGe:C production technology is presented, applicable for sensing- and broadband communication applications. To simplify the analog frontend, the fully differential design is based on a homodyne architecture. It comprises an LO signal generation unit based on a wideband 60 GHz fundamental Voltage Controlled Oscillator (VCO) and an on-chip prescaler, covering the full operational frequency band of 57–64 GHz. Within this bandwidth, the upconverter exhibits an upconversion gain of 23.6–26.4 dB and a maximum output-referred 1-dB compression point of 14 dBm. The downconverter provides a Double Sideband (DSB) noise figure of 9–12 dB with a downconversion gain of 37–71 dB. On chip AC-coupling of the receiver IF-output with a lower −3 dB cut-off frequency as low as 16 kHz eliminates mixer DC-offsets and enables on-chip Intermediate Frequency (IF) amplification. The whole transceiver MMIC draws a current of 415 mA from a single 3.3 V supply and requires few components externally to the chip.

scholarly journals Design of a Multipurpose Photonic Chip Architecture for THz Dual-Comb Spectrometers

Sensors ◽  
2020 ◽  
Vol 20 (21) ◽  
pp. 6089
Author(s):  
Andrés Betancur-Pérez ◽  
Pedro Martín-Mateos ◽  
Cristina de Dios ◽  
Pablo Acedo
Keyword(s):  
Integrated Circuit ◽  
Multispectral Imaging ◽  
Mode Selection ◽  
Building Blocks ◽  
Intermediate Frequency ◽  
General Purpose ◽  
Thz Spectroscopy ◽  
Photonic Integrated Circuit ◽  
Dc System ◽  
Time Operation

In this work, we present a multipurpose photonic integrated circuit capable of generating multiheterodyne complex Dual-Combs (DC) THz signals. Our work focuses on translating the functionality of an electro-optic tunable DC system into a photonic chip employing standard building blocks to ensure the scalability and cost efficiency of the integrated device. The architecture we analyze for integration is based on three stages: a seed comb, a mode selection stage and a DC stage. This final DC stage includes a frequency shifter, a key element to improve the final detection of the THz signals and obtain real-time operation. This investigation covers three key aspects: (1) a solution for comb line selection on GHz spaced combs using OIL or OPLL on photonic chips is studied and evaluated, (2) a simple and versatile scheme to produce a frequency shift using the double sideband suppressed carrier modulation technique and an asymmetric Mach Zehnder Interferometer to filter one of the sidebands is proposed, and (3) a multipurpose architecture that can offer a versatile effective device, moving from application-specific PICs to general-purpose PICs. Using the building blocks (BBs) available from an InP-based foundry, we obtained simulations that offer a high-quality Dual-Comb frequency shifted signal with a side mode suppression ratio around 21 dB, and 41 dB after photodetection with an intermediate frequency of 1 MHz. We tested our system to generate a Dual-Comb with 10 kHz of frequency spacing and an OOK modulation with 5 Gbps which can be down-converted to the THz range by a square law detector. It is also important to note that the presented architecture is multipurpose and can also be applied to THz communications. This design is a step to enable a commercial THz photonic chip for multiple applications such as THz spectroscopy, THz multispectral imaging and THz telecommunications and offers the possibility of being fabricated in a multi-project wafer.

Principle and Realization of Frequency Measuring with Countingdown Method

2014 ◽  
Vol 556-562 ◽  
pp. 2693-2696
Author(s):  
Lian Xiang Xu ◽  
Xiong Shi
Keyword(s):  
Integrated Circuit ◽  
Frequency Control ◽  
Intermediate Frequency ◽  
Frequency Measurement ◽  
Single Chip ◽  
Transmission Frequency ◽  
Square Wave ◽  
Frequency Control System ◽  
Standard Pulse ◽  
Down Conversion

The intermediate frequency signal, which is generated by down conversion of radar transmission pulse, is settled as square wave through the signal processing circuit; in N cycle of the unknown square wave of this frequency, the frequency measurement circuit with counting down method uses the counter and the time-sequence control circuit consisting of TTL integrated circuit, such as F161 and LS221, to count the standard pulse exported by homothermal crystal with high stability and then load the result in single chip in order to obtain the frequency measuring result. This frequency measuring circuits, a digital frequency measurement module, can rapidly and timely survey the transmission frequency during the constant radar transmission pulse and has been successfully applied in a self-adaption frequency control system of meter wave warning radar.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

Characterization of RF Sputtered ZnO Piezoelectric Films Using Transmission Electron Microscope

1975 ◽  
Vol 33 ◽  
pp. 86-87
Author(s):  
Kemining W. Yeh ◽  
Richard S. Muller ◽  
Wei-Kuo Wu ◽  
Jack Washburn
Keyword(s):  
Integrated Circuit ◽  
Acoustic Waves ◽  
New Technology ◽  
Surface Acoustic Waves ◽  
Electromechanical Properties ◽  
Leading Role ◽  
Saw Devices ◽  
Transmission Electron ◽  
High Degree

Considerable and continuing interest has been shown in the thin film transducer fabrication for surface acoustic waves (SAW) in the past few years. Due to the high degree of miniaturization, compatibility with silicon integrated circuit technology, simplicity and ease of design, this new technology has played an important role in the design of new devices for communications and signal processing. Among the commonly used piezoelectric thin films, ZnO generally yields superior electromechanical properties and is expected to play a leading role in the development of SAW devices.

Scanning Electron Microscopy in Hybrid Microelectronics

1976 ◽  
Vol 34 ◽  
pp. 456-457
Author(s):  
S. Khadpe ◽  
R. Faryniak
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Integrated Circuit ◽  
Failure Modes ◽  
Three Dimensional ◽  
Circuit Components ◽  
Hybrid Microcircuit ◽  
Electrical Connections ◽  
Scanning Electron

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.

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