scholarly journals THE CRYSTALLIZATION PROCESS OF METGLASS (Fe0.1Co0.55Ni0.35)78Si8B14 AND THE EFFECT OF HIGH PRESSURE (Ⅱ)——The Crystallization Temperature and The Crystallization Activation Energy

1985 ◽  
Vol 34 (10) ◽  
pp. 1327
Author(s):  
SHEN ZHONG-YI ◽  
YIN XIU-JUN ◽  
ZHANG YUN ◽  
HONG JING-XIN ◽  
HE SHOU-AN ◽  
...  
Keyword(s):  
Activation Energy ◽  
High Pressure ◽  
Crystallization Temperature ◽  
Crystallization Process ◽  
Crystallization Activation Energy

Characteristics of non-isothermal crystallization of polypropylene with and without talc

e-Polymers ◽  
2004 ◽  
Vol 4 (1) ◽  
Author(s):  
Carmen Albano ◽  
José Papa ◽  
Miren Ichazo ◽  
Jeanette González ◽  
Carmen Ustariz
Keyword(s):  
Activation Energy ◽  
Differential Scanning Calorimetry ◽  
Kinetic Equation ◽  
Crystallization Temperature ◽  
Crystallization Process ◽  
Crystallization Rate ◽  
Crystallization Activation Energy ◽  
Scanning Calorimetry ◽  
Homogeneous Crystallization ◽  
Temperature Crystallization

Abstract The non-isothermal behaviour of crystallization of polypropylene (PP) and its talc-filled composites was investigated by means of differential scanning calorimetry. Different analytical methods were used to describe the crystallization process. According to the behaviour of crystallization temperature, crystallization activation energy and crystallization parameters and coefficient, talc results in an increase in PP crystallization rate and in a decrease in total energy opposing to homogeneous crystallization. Velisaris-Seferis’ kinetic equation was found to describe reasonably well the non-isothermal behaviour of crystallization of PP and its filled composites.

The crystallization temperature and the activation energy for crystallization of metglass (F 0.1 Co 0.55 Ni 0.35 ) 78 Si 8 B 14 under high pressure

1985 ◽  
Vol 2 (5) ◽  
pp. 205-208 ◽  
Author(s):  
Shen Zhong-yi ◽  
Yin Xiu-jin ◽  
Zhang Yun ◽  
Hong Jing-xin ◽  
He Shou-an ◽  
...  
Keyword(s):  
Activation Energy ◽  
High Pressure ◽  
Crystallization Temperature

Study on the Crystallization Activation Energy of Poly (L-lactic acid) Nucleated with P-tert-butylcalix[8]arene

2018 ◽  
Vol 26 (2) ◽  
pp. 169-175
Author(s):  
Yaoqi Shi ◽  
Liang Wen ◽  
Zhong Xin
Keyword(s):  
Activation Energy ◽  
Lactic Acid ◽  
Glass Transition ◽  
Transition Temperature ◽  
Glass Transition Temperature ◽  
Crystallization Temperature ◽  
Nucleating Agent ◽  
Crystallization Activation Energy ◽  
Temperature Range ◽  
Chain Mobility

The crystallization activation energy (Δ E) of a polymer comprises the nucleation activation energy Δ F and the transport activation energy Δ E*. In this paper, the Δ E of poly (L-lactic acid) (PLLA) nucleated with nucleating agent p- tert-butylcalix[8]arene (tBC8) was calculated. The results showed that the Δ E of nucleated PLLA was 165.97 kJ/mol, which is higher than that of pure PLLA. The reason why Δ E of PLLA increased when incorporating nucleating agent was studied. The increment of glass transition temperature ( Tg) for nucleated PLLA revealed that the polymer chain mobility was restricted by tBC8, which was considered as the reason for the increase of Δ E*. Further, polyethylene glycol (PEG) was added to improve the chain mobility, thus eliminated the variation of the transport activation energy Δ E* caused by tBC8. Then the effect of the increment of crystallization temperature range on the increase of Δ F was also taken into consideration. It was concluded that both decreasing the mobility of chain segments and increasing the crystallization temperature range caused an increase of Δ E for PLLA/tBC8.

Crystallization behavior of Ge1Cu2Te3 amorphous film

2010 ◽  
Vol 1251 ◽  
Author(s):  
Yuji Sutou ◽  
Toshiya Kamada ◽  
Yuta Saito ◽  
Masashi Sumiya ◽  
Junichi Koike
Keyword(s):  
Activation Energy ◽  
Melting Point ◽  
Phase Change ◽  
Crystallization Temperature ◽  
Electrical Resistance ◽  
Crystallization Behavior ◽  
Crystallization Process ◽  
Amorphous Film ◽  
Chalcopyrite Structure ◽  
Change Material

AbstractThe electrical resistance on the crystallization process of sputtered-deposited Ge1Cu2Te3 film was investigated by two-point probe method. It was found that the amorphous Ge1Cu2Te3 film crystallizes into a single Ge1Cu2Te3 phase with a chalcopyrite structure, which leads to a large resistance drop. The crystallization temperature of the Ge1Cu2Te3 amorphous film was about 250 °C, which is about 70 °C higher than the conventional Ge2Sb2Te5 amorphous film. The activation energy for the crystallization of the Ge1Cu2Te3 amorphous film was higher than that of the Ge2Sb2Te5 amorphous film. The Ge1Cu2Te3 compound with a low melting point can be expected to be suitable as the phase change material for PCRAM.

Field-Assisted Isothermal Oriented Crystallization of SrO-TiO2-SiO2 Polar Glass-Ceramics

2009 ◽  
Vol 66 ◽  
pp. 49-52 ◽  
Author(s):  
Hong Cheng Wang ◽  
Qi Ming Liu ◽  
Jin Shu Cheng
Keyword(s):  
Activation Energy ◽  
Electric Field ◽  
Glass Surface ◽  
Crystallization Process ◽  
Glass Ceramics ◽  
Experimental Results ◽  
Piezoelectric Constant ◽  
Crystallization Activation Energy ◽  
Oriented Growth ◽  
Oriented Crystallization

The polar glass-ceramics of 2.0SrO-1.0TiO2-2.9SiO2 system were prepared by the process of recrystallization with additional applied isothermal and electric field. The results showed that the glass-ceramics piezoelectric constant d33 was 12×10-12 C/N. The study of its oriented crystallization by SEM and XRD indicated that Sr2TiSi2O8 crystal performed oriented growth, which was perpendicular to the glass surface and made it be orientally crystallized with the assisted the isothermal and electric field. The further experimental results showed that the additional electric field reduced the crystallization activation energy, which provided a force for the isothermal orientating crystallization process.

The Study of Fe-Based Broad Amorphous Ribbon’s Variable-Temperature Kinetics

2012 ◽  
Vol 560-561 ◽  
pp. 134-139
Author(s):  
Qiang Gui ◽  
Li Jun Wang
Keyword(s):  
Activation Energy ◽  
Heating Rate ◽  
Differential Scanning Calorimeter ◽  
Crystallization Temperature ◽  
Variable Temperature ◽  
Cube Root ◽  
Crystallization Activation Energy ◽  
Heating Rates ◽  
Amorphous Ribbons ◽  
Initial Crystallization Temperature

Variable temperature kinetics under different heating rates for the Fe-based amorphous ribbons are studied by differential scanning calorimeter (DSC) technology. The results show that imported and domestic amorphous ribbons have the same overheating degree under the same heating rate, and the initial crystallization temperature is proportional to the cube root of the heating rate. The calculation indicate that the crystallization activation energy of imported and domestic amorphous ribbons are about 297~300 kJ/mol and 335~340 kJ/mol, respectively.

Enhanced crystallization and phase transformation of amorphous silicon nitride under high pressure

2001 ◽  
Vol 16 (1) ◽  
pp. 67-75 ◽  
Author(s):  
Ya-Li Li ◽  
Yong Liang ◽  
Fen Zheng ◽  
Xian-Feng Ma ◽  
Suo-Jing Cui ◽  
...  
Keyword(s):  
High Pressure ◽  
Phase Transformation ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystallization Temperature ◽  
Amorphous Materials ◽  
Normal Pressure ◽  
Nucleation And Growth ◽  
Amorphous Silicon Nitride ◽  
Amorphous Si

The crystallization and phase transformation of amorphous Si3N4 ceramics under high pressure (1.0–5.0 GPa) between 800 and 1700 °C were investigated. A greatly enhanced crystallization and α–β transformation of the amorphous Si3N4 ceramics were evident under the high pressure, as characterized by that, at 5.0 GPa, the amorphous Si3N4 began to crystallize at a temperature as low as 1000 °C (to transform to a modification). The subsequent a–b transformation occurred completed between 1350 and 1420 °C after only 20 min of pressing at 5.0 GPa. In contrast, under 0.1 MPa N2, the identical amorphous materials were stable up to 1400 °C without detectable crystallization, and only a small amount of a phase was detected at 1500 °C. The crystallization temperature and the a–b transformation temperatures are reduced by 200–350 °C compared to that at normal pressure. The enhanced phase transformations of the amorphous Si3N4 were discussed on the basis of thermodynamic and kinetic consideration of the effects of pressure on nucleation and growth.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Transformation probability of graphite-diamond assisted by nonmetallic catalysts at high pressure and high temperature

1999 ◽  
Vol 14 (3) ◽  
pp. 631-633 ◽  
Author(s):  
Liling Sun ◽  
Qi Wu ◽  
Yafei Zhang ◽  
Wenkui Wang
Keyword(s):  
Activation Energy ◽  
High Pressure ◽  
High Temperature ◽  
Potential Barrier ◽  
Highly Sensitive

The tendency of graphite-diamond transformation assisted by nonmetallic catalysts of carbonates, sulfates, or phosphorus under high pressure and high temperature has been investigated by calculating the activation energy and transformation probability of the carbon atoms over a potential barrier. It was found that the activation energy is highly sensitive to the catalyst chosen. The value of activation energy in the systems of graphite-carbonates, graphite-phosphorus, and graphite-sulfate are 130.71 × 103, 206.03 × 103, and 221 × 103 J/mol, respectively. If fd stands for the probability of the transformation from graphite to diamond, the probability sequence of graphite-diamond transformation in different systems was put forward: fd(gr.-carbonate) > fd(gr.-phosphorus). fd(gr.-sulfate).

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