Electrical Properties of High-k MIM Interlevel Capacitors Prepared for RF-CMOS Device Applications

2002 ◽  
Author(s):  
M. Tarutani ◽  
K. Shintani ◽  
T. Mori ◽  
K. Nishikawa ◽  
Y. Hashizume ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Rf Cmos ◽  
High K ◽  
Device Applications

Nanoscale Study of the Influence of Atomic Oxygen on the Electrical Properties of LaAlO3 Thin High-k Oxide Films Deposited by Molecular Beam Epitaxy

2009 ◽  
Author(s):  
Wael Hourani ◽  
Liviu Militaru ◽  
Brice Gautier ◽  
David Albertini ◽  
Armel Descamps-Mandine ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Atomic Oxygen ◽  
Molecular Beam ◽  
Oxide Films ◽  
High K

SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

2007 ◽  
Vol 556-557 ◽  
pp. 153-156
Author(s):  
Chi Kwon Park ◽  
Gi Sub Lee ◽  
Ju Young Lee ◽  
Myung Ok Kyun ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Layer ◽  
Light Emission ◽  
Epitaxial Layers ◽  
Current Voltage ◽  
Space Technique ◽  
Sublimation Method ◽  
Device Applications ◽  
P Type ◽  
Surface Morphologies

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.

Electrical properties of high-k ZrO/sub 2/ gate dielectrics on strained Ge-rich layers

2004 ◽  
Author(s):  
S. Bhattacharya ◽  
J. McCarthy ◽  
B.M. Armstrong ◽  
H.S. Gamble ◽  
G.K. Dalapati ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gate Dielectrics ◽  
High K

Using Conductive Atomic Force Microscopy to the Evaluate Electrical Properties of MoS2 nanoparticles for Device Applications

2021 ◽  
Vol 104 (3) ◽  
pp. 17-19
Author(s):  
Aisha Alhammadi ◽  
Wafa Alnaqbi ◽  
Juveiriah Ashraf ◽  
Ayman Rezk ◽  
Ammar Nayfeh
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Device Applications ◽  
Mos2 Nanoparticles

Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators

2009 ◽  
Vol 94 (4) ◽  
pp. 042901 ◽  
Author(s):  
Yi Zhao ◽  
Koji Kita ◽  
Kentaro Kyuno ◽  
Akira Toriumi
Keyword(s):  
Electrical Properties ◽  
Band Gap ◽  
Gate Insulators ◽  
High K
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