scholarly journals Understanding Package Delamination through Package Deformation Modeling at Different Thermal Conditions

2021 ◽  
pp. 142-148
Author(s):  
Jefferson Talledo
Keyword(s):  
Cross Section ◽  
Thermal Conditions ◽  
Specific Situation ◽  
Robust Solution ◽  
Root Cause ◽  
Reflow Temperature ◽  
Semiconductor Packaging ◽  
Section Analysis

Package delamination is one of the problems in semiconductor packaging. Understanding the delamination mechanism in a specific situation is very important to identify the root cause and implement robust solution. In this study, package deformation modeling was done to analyze the deformation of the substrate or package at different thermal conditions. The modeling result was compared with the actual package deformation of the package with delamination problem. It was found out that the observed deformation through actual cross-section analysis matched with the modeling result at reflow temperature condition. Thus, it could be concluded that the delamination happens during package reflow and not after post mold cure or the preceding processes.

Case Analysis on PTH Fracture Caused by Twin Copper

2014 ◽  
Vol 1061-1062 ◽  
pp. 431-435
Author(s):  
Xiao He
Keyword(s):  
Thermal Analysis ◽  
Thermal Stress ◽  
Theoretical Analysis ◽  
Cross Section ◽  
Current Density ◽  
Case Analysis ◽  
Actual Case ◽  
Soldering Process ◽  
Root Cause ◽  
Section Analysis

An actual case of PTH fracture after soldering process was studied. By means of cross section analysis using metallography microscope and SEM, together with thermal analysis results, root cause of PTH fracture was concluded that a high density of twin copper weakened the mechanical strength so seriously that PTHs could not undergo thermal stress from soldering process, and higher CTE was attributed to an accelerative factor. Moreover, it is recommended to enhance current density properly and make sure the effectiveness of electroplating additives to prevent twin copper by theoretical analysis.

Failure Analysis of Stacked-Die Devices by Combining Non-Destructive Localization and Target Preparation Methods

2009 ◽  
Author(s):  
Christian Schmidt ◽  
Michél Simon ◽  
Frank Altmann ◽  
Antoine Nowodzinski
Keyword(s):  
Cross Section ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Preparation Methods ◽  
Target Preparation ◽  
X Ray ◽  
Root Cause ◽  
Lock In ◽  
Non Destructive ◽  
Section Analysis

Abstract The paper will present an approach for non-destructive localization of thermal active defects at multi chip devices combining the Lock-in Thermography and following local X-Ray inspection. In combination of both methods inner defects in inter chip connections of complex device built ups can be found in a non-destructive way before opening the device. The methods were demonstrated at defective flip chip devices with a high ohmic daisy chain with lots of chip to chip contacts. Subsequently, cross section analysis at located high ohmic contacts was performed in order to find the root cause of the failure.

Failure Modes, Reliability Analysis and Case Studies on the Integration of Copper and Low-K Technology

2004 ◽  
Author(s):  
Huixian Wu ◽  
James Cargo ◽  
Huixian Wu ◽  
Marvin White
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Copper Interconnects ◽  
Wet Chemical ◽  
Low K ◽  
Section Analysis

Abstract The integration of copper interconnects and low-K dielectrics will present novel failure modes and reliability issues to failure analysts. This paper discusses failure modes related to Cu/low-K technology. Here, physical failure analysis (FA) techniques including deprocessing and cross-section analysis have been developed. The deprocessing techniques include wet chemical etching, reactive ion etching, chemical mechanical polishing and a combination of these techniques. Case studies on different failure modes related to Cu/low k technology are discussed: copper voiding, copper extrusion; electromigration stress failure; dielectric cracks; delamination-interface adhesion; and FA on circuit-under-pad. For the cross-section analysis of copper/low-K samples, focused ion beam techniques have been developed. Scanning electron microscopy, EDX, and TEM analytical analysis have been used for failure analysis for Cu/low-K technology. Various failure modes and reliability issues have also been addressed.

Cross Section Analysis of Cu Filled TSVs Based on High Throughput Plasma-FIB Milling

2012 ◽  
Author(s):  
Frank Altmann ◽  
Jens Beyersdorfer ◽  
Jan Schischka ◽  
Michael Krause ◽  
German Franz ◽  
...  
Keyword(s):  
High Resolution ◽  
Cross Section ◽  
High Throughput ◽  
Cross Sections ◽  
Electron Backscatter Diffraction ◽  
Grain Structure ◽  
Electron Backscatter ◽  
Section Surface ◽  
Backscatter Diffraction ◽  
Section Analysis

Abstract In this paper the new Vion™ Plasma-FIB system, developed by FEI, is evaluated for cross sectioning of Cu filled Through Silicon Via (TSV) interconnects. The aim of the study presented in this paper is to evaluate and optimise different Plasma-FIB (P-FIB) milling strategies in terms of performance and cross section surface quality. The sufficient preservation of microstructures within cross sections is crucial for subsequent Electron Backscatter Diffraction (EBSD) grain structure analyses and a high resolution interface characterisation by TEM.

Alternating Plane-View and Cross-Section Scanning Capacitance Microscope Technique to Reveal Various Implant Issue

2007 ◽  
Author(s):  
Tsan-Chang Chuang ◽  
Cha-Ming Shen ◽  
Shi-Chen Lin ◽  
Chen-May Huang ◽  
Jin-Hong Chou ◽  
...  
Keyword(s):  
Cross Section ◽  
Scanning Probe Microscopy ◽  
Dopant Concentration ◽  
Scanning Probe ◽  
Correct Selection ◽  
Cross Sectional ◽  
Root Cause ◽  
Excellent Spatial Resolution ◽  
Microscope Technique ◽  
Plane View

Abstract Scanning capacitance microscopy (SCM) is a 2-D carrier and/or dopant concentration profiling technique under development that utilizes the excellent spatial resolution of scanning probe microscopy. However, PV-SCM has limited capability to achieve the goal due to inherent "plane" trait. On top of that, deeper concentration profile just like deep N-well is also one of restrictions to use. For representing above contents more clearly, this paper presents a few cases that demonstrate the alternated and optimized application of PV-SCM and X-SCM. The case studies concern Joint Test Action Group failure and stand-by failure. These cases illustrate that the correct selection from either plane-view or cross-sectional SCM analysis according to the surrounding of defect could help to exactly and rapidly diagnose the failure mechanism. Alternating and optimizing PV-SCM and X-SCM techniques to navigate various implant issue could provide corrective actions that suit local circumstance of defects and identify the root cause.

Objective Cross Section Analysis

1966 ◽  
Vol 5 (3) ◽  
pp. 233-245 ◽  
Author(s):  
R. T. Duquet ◽  
E. F. Danielsen ◽  
N. R. Phares
Keyword(s):  
Cross Section ◽  
Section Analysis

A Cross-Section Analysis of Non-Business Air Travel

1958 ◽  
Vol 53 (284) ◽  
pp. 928-947 ◽  
Author(s):  
John B. Lansing ◽  
Dwight M. Blood
Keyword(s):  
Cross Section ◽  
Air Travel ◽  
Section Analysis

scholarly journals The Cross Section for the J = 0 → 2 Rotational Excitation of Hydrogen by Slow Electrons

1969 ◽  
Vol 22 (6) ◽  
pp. 715 ◽  
Author(s):  
RW Crompton ◽  
DK Gibson ◽  
AI McIntosh
Keyword(s):  
Momentum Transfer ◽  
Cross Section ◽  
Cross Sections ◽  
Vibrational Excitation ◽  
The Cross ◽  
Excitation Processes ◽  
Slow Electrons ◽  
And Diffusion ◽  
Momentum Transfer Cross Section ◽  
Section Analysis

The results of electron drift and diffusion measurements in parahydrogen have been analysed to determine the cross sections for momentum transfer and for rotational and vibrational excitation. The limited number of possible excitation processes in parahydrogen and the wide separation of the thresholds for these processes make it possible to determine uniquely the J = 0 → 2 rotational cross section from threshold to 0.3 eV. In addition, the momentum transfer cross section has been determined for energies less than 2 eV and it is shown that, near threshold, a vibrational cross section compatible with the data must lie within relatively narrow limits. The problems of uniqueness and accuracy inherent in the swarm method of cross section analysis are discussed. The present results are compared with other recent theoretical and experimental determinations; the agreement with the most recent calculations of Henry and Lane is excellent.

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