scholarly journals Особенности МДП-структур с фторидом самария на кремниевых и германиевых подложках

2019 ◽  
Vol 53 (2) ◽  
pp. 241
Author(s):  
М.Б. Шалимова ◽  
Н.В. Сачук
Keyword(s):  
Electric Fields ◽  
Transmission Mechanism ◽  
Interface Traps ◽  
Power Dependence ◽  
Trap Charge ◽  
Insulator Film ◽  
Current Transmission ◽  
Capacitance Voltage ◽  
Silicon And Germanium ◽  
P Type

AbstractThe electrophysical characteristics of silicon and germanium MIS structures with an SmF_3 insulator film, as well as their degradation due to the effect of electric fields, although similar, have a number of specific features. The current-transmission mechanism in all studied structures is described by the power dependence. Interface traps form the charge of electrically active traps, which varies during capacitance–voltage measurements, and the charge of inactive traps, which remains invariable. This charge is negative on the n -Ge surface, and the corresponding charge on the n -type and p -type silicon surface is positive. The trap charge density in the bulk of samarium fluoride lies in the range from –0.2 × 10^–8 to 0.6 × 10^–8 C/cm^2 and is negligibly small when compared with the charge of interface traps in most cases.

scholarly journals Spin current distribution in antiferromagnetic zigzag graphene nanoribbons under transverse electric fields

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jie Zhang ◽  
Eric P. Fahrenthold
Keyword(s):  
Electric Fields ◽  
Transverse Electric ◽  
Graphene Nanoribbons ◽  
Spin Current ◽  
Differential Resistance ◽  
Current Control ◽  
Field Analysis ◽  
Current Transmission ◽  
Transverse Electric Fields ◽  
Zigzag Graphene Nanoribbons

AbstractThe spin current transmission properties of narrow zigzag graphene nanoribbons (zGNRs) have been the focus of much computational research, investigating the potential application of zGNRs in spintronic devices. Doping, fuctionalization, edge modification, and external electric fields have been studied as methods for spin current control, and the performance of zGNRs initialized in both ferromagnetic and antiferromagnetic spin states has been modeled. Recent work has shown that precise fabrication of narrow zGNRs is possible, and has addressed long debated questions on their magnetic order and stability. This work has revived interest in the application of antiferromagnetic zGNR configurations in spintronics. A general ab initio analysis of narrow antiferromagnetic zGNR performance under a combination of bias voltage and transverse electric field loading shows that their current transmission characteristics differ sharply from those of their ferromagnetic counterparts. At relatively modest field strengths, both majority and minority spin currents react strongly to the applied field. Analysis of band gaps and current transmission pathways explains the presence of negative differential resistance effects and the development of spatially periodic electron transport structures in these nanoribbons.

Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator

1989 ◽  
Vol 168 (2) ◽  
pp. 157-163 ◽  
Author(s):  
B. Ullrich ◽  
F. Kuchar ◽  
R. Meisels ◽  
F. Olcaytug ◽  
A. Jachimowicz
Keyword(s):  
Semiconductor Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage ◽  
P Type

Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

2014 ◽  
Vol 1634 ◽  
Author(s):  
Luana S. Araujo ◽  
Olivia Berengue ◽  
Maurício Baldan ◽  
Neidenei Ferreira ◽  
João Moro ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Diamond Surface ◽  
Plasma Cleaning ◽  
Electrical Characteristics ◽  
Capacitance Measurements ◽  
Boron Doped ◽  
Capacitance Voltage ◽  
Surface Adsorbates ◽  
P Type

ABSTRACTDoped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.

scholarly journals Туннельная эмиссия электронов из наноструктурированных кремниевых катодных матриц с фтор-углеродным покрытием

2019 ◽  
Vol 89 (6) ◽  
pp. 952
Author(s):  
Р.К. Яфаров
Keyword(s):  
Field Emission ◽  
Electric Fields ◽  
Silicon Surface ◽  
Silicon Wafers ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Physicochemical Models ◽  
Surface Modified ◽  
P Type ◽  
Carbon Plasma

AbstractVariations of the morphology and field-emission properties of surface-structured n - and p -type silicon wafers have been studied. The silicon surface has been structured by etching in a fluorine–carbon plasma and depositing subnanodimensional island carbon masks. It has been shown that surface structuring in a fluorine–carbon plasma makes it possible to reach desired field-emission currents in electric fields of different strengths. Physicochemical models of field emission mechanisms and models of destruction of surface-modified multipoint silicon array cathodes have been considered.

FABRICATION AND ELECTRICAL PROPERTIES OF Au/PVDF-TrFE/LaZrOx/Si(100) STRUCTURE

2010 ◽  
Vol 24 (22) ◽  
pp. 4203-4208 ◽  
Author(s):  
HUI-SEONG HAN ◽  
GWANG-GEUN LEE ◽  
BYUNG-EUN PARK
Keyword(s):  
Thin Films ◽  
Polyvinylidene Fluoride ◽  
Oxide Thickness ◽  
Voltage Sweep ◽  
Window Width ◽  
Capacitance Voltage ◽  
Coating Method ◽  
Insulator Layers ◽  
Lanthanum Zirconium Oxide ◽  
P Type

Metal-ferroelectric-insulator-semiconductor structure capacitors with a polyvinylidene fluoride trifluoroethylene (75/25) (PVDF-TrFE) ferroelectric and a lanthanum zirconium oxide ( LaZrO x) insulator layers were fabricated on a p-type Si(100) substrate in this work. The thin films were prepared using the spin-coating method. The LaZrO x thin films were crystallized at 750°C for 30 min in an O 2 ambient. Negligible hysteresis was observed from the C–V (capacitance-voltage) characteristic of the LaZrO x/ Si structure. The equivalent oxide thickness (EOT) was about 8.2 nm. Then the PVDF-TrFE film was spin-coated on the LaZrO x/ Si structure. To crystallize the PVDF-TrFE, the structure was annealed at 165°C for 30 min. The memory window width in the C–V curve of the Au/PVDF - TrFE/LaZrO x/ Si structure was about 4 V for a voltage sweep of ±5 V, and the leakage current density was about 10-8 A/cm 2 at 35 kV/cm for a 100-nm-thick film.

Characterization of Aluminium and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique

2005 ◽  
Vol 483-485 ◽  
pp. 701-704 ◽  
Author(s):  
Maciej Wolborski ◽  
Mietek Bakowski ◽  
Viljami Pore ◽  
Mikko Ritala ◽  
Markku Leskelä ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Titanium Oxides ◽  
Al2o3 Film ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method ◽  
Capacitance Voltage ◽  
P Type ◽  
Titanium Oxide Films

Aluminium oxide and titanium oxide films were deposited using the Atomic Layer Deposition method on n-type 4H SiC and p-type Si {001} substrates, with doping 6×1015cm-3 and 2×1016cm-3, respectively, and on 1.2 kV PiN 4H SiC diodes for passivation studies. The Al2O3 and SiC interface was characterised for the existence of an effective negative charge with a density of 1×1012-2×1012 cm-2. The dielectric constant of Al2O3 as determined from capacitance-voltage data was about 8.3. The maximum electric field supported by the Al2O3 film was up to 7.5 MV/cm and 8.4 MV/cm on SiC and Si, respectively.

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 249-252 ◽  
Author(s):  
Sylvie Contreras ◽  
Leszek Konczewicz ◽  
Pawel Kwasnicki ◽  
Roxana Arvinte ◽  
Hervé Peyre ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electrical Transport ◽  
Hole Concentration ◽  
Electrical Transport Properties ◽  
Capacitance Voltage ◽  
Experimental Values ◽  
Cv Measurements ◽  
P Type ◽  
Secondary Ion

In the range 80 K-900 K, we have investigated the electrical properties of heavily aluminum in-situ doped, 4H-SiC samples. The temperature dependence of the hole concentration and Hall mobility was analyzed in the model taking into account heavy and light holes. The modelisation parameters were compared with experimental values of Secondary Ion Mass Spectroscopy (SIMS) and Capacitance-Voltage (CV) measurements.

Hole Trapping in the NBTI Characteristic of SiC MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 667-670
Author(s):  
Yan Jing He ◽  
Hong Liang Lv ◽  
Xiao Yan Tang ◽  
Qing Wen Song ◽  
Yi Meng Zhang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Threshold Voltage Shift ◽  
Hole Trapping ◽  
Primary Mechanism ◽  
Capacitance Voltage ◽  
Cv Measurements ◽  
P Type

P-type implanted metal oxide semiconductor capacitors (MOSCAPs) and metal oxide semiconductor field effect transistors (MOSFETs) have been fabricated. The characteristics of hole trapping at the interface of SiO2/SiC are investigated through capacitance-voltage (CV) measurements with different starting voltages. The negative shift voltage ∆Vshift and the hysteresis voltages ∆VH which caused by the hole traps in the MOSCAPs and MOSFETs are extracted from CV results. The results show that the hole traps extracted from MOSCAPs are larger than the that extracted from the threshold voltage shift in the MOSFETs. It suggests holes trapping are the primary mechanism contributing to the NBTI, but not all the holes work. Part of the hole traps are compensation by sufficient electrons in the MOSFET structure.

Sign in / Sign up

Export Citation Format

Share Document