scholarly journals Investigation of the deposition of calcium fluoride nanoparticles on the chips of CaF2 single crystals

2021 ◽  
Vol 23 (4) ◽  
pp. 607-613
Author(s):  
Pavel P. Fedorov ◽  
Maria N. Mayakova ◽  
Radmir V. Gaynutdinov ◽  
Natalia Yu. Tabachkova ◽  
Gennadiy A. Komandin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Calcium Fluoride ◽  
Substrate Surface ◽  
Complex Structure ◽  
Submicron Particles ◽  
Layer Composite ◽  
Crystal Substrate ◽  
Co Precipitation ◽  
20 Nm ◽  
Fluoride Nanoparticles

The deposition of calcium fluoride nanoparticles on single crystal chips of calcium fluoride was studied. CaF2 nanoparticles were synthesized by co-precipitation from aqueous nitrate solutions using hydrofluoric acid as a fluorinating agent at a batch system. The prepared samples were examined by atomic force microscopy, scanning electron microscopy, transmission electron microscopy and optical transmission. There is an inhomogeneous coating of the substrate surface with submicron particles of about 100–150 nm in size, which are clusters of nanoparticles of 15-20 nm in size. The initial nanoparticles coherently grow on the surface of the crystal substrate. Heat treatment of the substrate-deposited layer composite at 600 °C leads to the coalescence of submicron particles and the formation of a porous layer of a complex structure.

scholarly journals Structural, morphological, magnetic and electrical properties of Ni-doped ZnO nanoparticles synthesized by co-precipitation method

2018 ◽  
Vol 12 (2) ◽  
pp. 100-110 ◽  
Author(s):  
Madhava Dasari ◽  
Umadevi Godavarti ◽  
Vishwanath Mote
Keyword(s):  
Electron Microscopy ◽  
Photo Luminescence ◽  
Precipitation Method ◽  
Nickel Concentration ◽  
Particle Sizes ◽  
Ferromagnetic Behaviour ◽  
Transmission Electron ◽  
Co Precipitation ◽  
20 Nm ◽  
Weak Ferromagnetic

Weak ferromagnetic behaviour was obtained in a systematic way at room temperature by doping of ZnO with nickel (Zn1-xNixO, where x = 0.00, 0.05, 0.15 and 0.20). The obtained results were correlated with conductivity and impedance studies. Diamagnetic to ferromagnetic change was observed with increased concentration of nickel. X-ray diffraction analysis confirmed wurtzite ZnO structure of prepared nanopowders while microstrain was increased with nickel concentration. Incorporation of nickel in ZnO structure was confirmed using EDAX analysis, while FTIR spectroscopy provided further information on functional groups. Transmission electron microscopy images showed that the particle sizes are in the range of 12-20 nm, and scanning electron microscopy analyses that grain size decreases with increase in nickel concentration. Photo luminescence studies confirmed the presence of VO and Zni defects in the prepared samples. It was concluded that the defect induced strain, grain boundaries and lower particle sizes are the reasons for weak ferromagnetic behaviour of the investigated samples.

Morphologies of Nonadherent Al2O3 and Matching Substrate Surfaces

1972 ◽  
Vol 30 ◽  
pp. 524-525
Author(s):  
C. S. Giggins ◽  
J. K. Tien ◽  
B. H. Kear ◽  
F. S. Pettit
Keyword(s):  
Electron Microscopy ◽  
Oxide Scale ◽  
Oxidation Resistance ◽  
Substrate Surface ◽  
Morphological Features ◽  
Thermally Induced ◽  
Oxide Spallation ◽  
Oxidation Resistant ◽  
Induced Stresses ◽  
Substrate Surfaces

The performance of most oxidation resistant alloys and coatings is markedly improved if the oxide scale strongly adheres to the substrate surface. Consequently, in order to develop alloys and coatings with improved oxidation resistance, it has become necessary to determine the conditions that lead to spallation of oxides from the surfaces of alloys. In what follows, the morphological features of nonadherent Al2O3, and the substrate surfaces from which the Al2O3 has spalled, are presented and related to oxide spallation.The Al2O3, scales were developed by oxidizing Fe-25Cr-4Al (w/o) and Ni-rich Ni3 (Al,Ta) alloys in air at 1200°C. These scales spalled from their substrates upon cooling as a result of thermally induced stresses. The scales and the alloy substrate surfaces were then examined by scanning and replication electron microscopy.The Al2O3, scales from the Fe-Cr-Al contained filamentary protrusions at the oxide-gas interface, Fig. 1(a). In addition, nodules of oxide have been developed such that cavities were formed between the oxide and the substrate, Fig. 1(a).

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

Ion thinning of integrated circuit transverse specimens for transmission electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1426-1427
Author(s):  
F. Shaapur
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Integrated Circuit ◽  
Substrate Surface ◽  
Homogeneous Material ◽  
Material System ◽  
Ion Milling ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Motion Profile

Non-uniform ion-thinning of heterogenous material structures has constituted a fundamental difficulty in preparation of specimens for transmission electron microscopy (TEM). A variety of corrective procedures have been developed and reported for reducing or eliminating the effect. Some of these techniques are applicable to any non-homogeneous material system and others only to unidirectionalfy heterogeneous samples. Recently, a procedure of the latter type has been developed which is mainly based on a new motion profile for the specimen rotation during ion-milling. This motion profile consists of reversing partial revolutions (RPR) within a fixed sector which is centered around a direction perpendicular to the specimen heterogeneity axis. The ion-milling results obtained through this technique, as studied on a number of thin film cross-sectional TEM (XTEM) specimens, have proved to be superior to those produced via other procedures.XTEM specimens from integrated circuit (IC) devices essentially form a complex unidirectional nonhomogeneous structure. The presence of a variety of mostly lateral features at different levels along the substrate surface (consisting of conductors, semiconductors, and insulators) generally cause non-uniform results if ion-thinned conventionally.

scholarly journals Effects of Long Durations of RF–Magnetron Sputtering Deposition of Hydroxyapatite on Titanium Dental Implants

2021 ◽  
Author(s):  
Ihab Nabeel Safi ◽  
Basima Mohammed Ali Hussein ◽  
Hikmat J. Aljudy ◽  
Mustafa S. Tukmachi
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Magnetron Sputtering ◽  
Dental Implants ◽  
Substrate Surface ◽  
Rf Magnetron Sputtering ◽  
P Value ◽  
Edx Analysis ◽  
Significant Difference ◽  
Scanning Electron

Abstract Objectives Dental implant is a revolution in dentistry; some shortages are still a focus of research. This study use long duration of radiofrequency (RF)–magnetron sputtering to coat titanium (Ti) implant with hydroxyapatite (HA) to obtain a uniform, strongly adhered in a few micrometers in thickness. Materials and Methods Two types of substrates: discs and root form cylinders were prepared using a grade 1 commercially pure (CP) Ti rod. A RF–magnetron sputtering device was used to coat specimens with HA. Magnetron sputtering was set at 150 W for 22 hours at 100°C under continuous argon gas flow and substrate rotation at 10 rpm. Coat properties were evaluated via field emission scanning electron microscopy (FESEM), scanning electron microscopy–energy dispersive X-ray (EDX) analysis, atomic force microscopy, and Vickers hardness (VH). Student’s t-test was used. Results All FESEM images showed a homogeneous, continuous, and crack-free HA coat with a rough surface. EDX analysis revealed inclusion of HA particles within the substrate surface in a calcium (Ca)/phosphorus (P) ratio (16.58/11.31) close to that of HA. Elemental and EDX analyses showed Ca, Ti, P, and oxygen within Ti. The FESEM views at a cross-section of the substrate showed an average of 7 µm coat thickness. Moreover, these images revealed a dense, compact, and uniform continuous adhesion between the coat layer and the substrate. Roughness result indicated highly significant difference between uncoated Ti and HA coat (p-value < 0.05). A significant improvement in the VH value was observed when coat hardness was compared with the Ti substrate hardness (p-value < 0.05). Conclusion Prolonged magnetron sputtering successfully coat Ti dental implants with HA in micrometers thickness which is well adhered essentially in excellent osseointegration.

scholarly journals Synthesis of Ce1−xPdxO2−δ Solid Solution in Molten Nitrate

Catalysts ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 640
Author(s):  
Hideaki Sasaki ◽  
Keisuke Sakamoto ◽  
Masami Mori ◽  
Tatsuaki Sakamoto
Keyword(s):  
Electron Microscopy ◽  
Solid Solution ◽  
Solid Solutions ◽  
Photoelectron Spectroscopy ◽  
Synthesis Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Co Precipitation ◽  
Ionic States

CeO2-based solid solutions in which Pd partially substitutes for Ce attract considerable attention, owing to their high catalytic performances. In this study, the solid solution (Ce1−xPdxO2−δ) with a high Pd content (x ~ 0.2) was synthesized through co-precipitation under oxidative conditions using molten nitrate, and its structure and thermal decomposition were examined. The characteristics of the solid solution, such as the change in a lattice constant, inhibition of sintering, and ionic states, were examined using X-ray diffraction (XRD), scanning electron microscopy–energy-dispersive X-ray spectroscopy (SEM−EDS), transmission electron microscopy (TEM)−EDS, and X-ray photoelectron spectroscopy (XPS). The synthesis method proposed in this study appears suitable for the easy preparation of CeO2 solid solutions with a high Pd content.

scholarly journals Aluminum Nitride-Silicon Carbide Alloy Crystals Grown on SiC Substrates by Sublimation

2005 ◽  
Vol 10 ◽  
Author(s):  
Z. Gu ◽  
L. Du ◽  
J.H. Edgar ◽  
E.A. Payzant ◽  
L. Walker ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
Original Source ◽  
X Ray ◽  
Alloy Crystal ◽  
Transmission Electron ◽  
Crystal Substrate ◽  
Vapor Distribution ◽  
Uniform Composition

AlN-SiC alloy crystals, with a thickness greater than 500 µm, were grown on 4H- and 6H-SiC substrates from a mixture of AlN and SiC powders by the sublimation-recondensation method at 1860-1990 °C. On-axis SiC substrates produced a rough surface covered with hexagonal grains, while 6H- and 4H- off-axis SiC substrates with different miscut angles (8° or 3.68°) formed a relatively smooth surface with terraces and steps. The substrate misorientation ensured that the AlN-SiC alloy crystals grew two dimensionally as identified by scanning electron microscopy (SEM). X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed that the AlN-SiC alloys had the wurtzite structure. Electron probe microanalysis (EPMA) and x-ray photoelectron spectroscopy (XPS) demonstrated that the resultant alloy crystals had non-stoichiometric ratios of Al:N and Si:C and a uniform composition throughout the alloy crystal from the interface to the surface. The composition ratio of Al:Si of the alloy crystals changed with the growth temperature, and differed from the original source composition, which was consistent with the results predicted by thermodynamic calculation of the solid-vapor distribution of each element. XPS detected the bonding between Si-C, Si-N, Si-O for the Si 2p spectra. The dislocation density decreased with the growth, which was lower than 106 cm−2 at the alloy surface, more than two orders of magnitude lower compared to regions close to the crystal/substrate interface, as determined by TEM.

X-Ray-Optical Multilayer Structures Studied Using High Resolution Electron Microscopy.

1986 ◽  
Vol 77 ◽  
Author(s):  
Mary Beth Stearns ◽  
Amanda K. Petford-Long ◽  
C.-H. Chang ◽  
D. G. Stearns ◽  
N. M. Ceglio ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Substrate Surface ◽  
High Resolution Electron Microscopy ◽  
Atomic Scale ◽  
Degree Of Crystallinity ◽  
Multilayer Systems ◽  
Layer Width ◽  
X Ray ◽  
Resolution Electron

ABSTRACTThe technique of high resolution electron microscopy has been used to examine the structure of several multilayer systems (MLS) on an atomic scale. Mo/Si multilayers, in use in a number of x-ray optical element applications, and Mo/Si multilayers, of interest because of their magnetic properties, have been imaged in cross-section. Layer thicknesses, flatness and smoothness have been analysed: the layer width can vary by up to 0.6nm from the average value, and the layer flatness depends on the quality of the substrate surface for amorphous MLS, and on the details of the crystalline growth for the crystalline materials. The degree of crystallinity and the crystal orientation within the layers have also been investigated. In both cases, the high-Z layers are predominantly crystalline and the Si layers appear amorphous. Amorphous interfacial regions are visible between the Mo and Si layers, and crystalline cobalt suicide interfacial regions between the Co and Si layers. Using the structural measurements obtained from the HREM results, theoretical x-ray reflectivity behaviour has been calculated. It fits the experimental data very well.

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