Impact of the interface layer on the cycling behaviour and retention of ferroelectric hafnium oxide

Reliability is a central aspect of hafnium oxide-based ferroelectric field effect transistors (FeFETs), which are promising candidates for embedded non-volatile memories. Besides the device performance, understanding the evolution of the ferroelectric behaviour of hafnium oxide over its lifetime in FeFETs is of major importance for further improvements. Here, we present the impact of the interface layer in FeFETs on the cycling behaviour and retention of ferroelectric silicon-doped hafnium oxide. Thicker interfaces are demonstrated to reduce the presence of antiferroelectric-like wake-up effects and to improve endurance. However, they show a strong destabilisation of one polarisation state in terms of retention. In addition, measurements of the Preisach density revealed additional insight in the wake-up effect of these metal-ferroelectric-insulator-semiconductor (MFIS) capacitors. Graphic abstract

In-plane ferroelectricity in few-layered GeS and its van der Waals ferroelectric diodes

Few-layered GeS nanoflakes synthesized by a new post-thinning method show in-plane ferroelectric behaviour. The robust interfacial ferroelectricity in the GeS/InSe heterostructure yields a tunable photovoltaic performance.

Artificially induced normal ferroelectric behaviour in aerosol deposited relaxor 65PMN–35PT thick films by interface engineering

A thin dielectric layer of Al2O3 was grown by atomic layer deposition on a relaxor ferroelectric 65Pb(Mg1/3Nb2/3)O3–35PbTiO3 (PMN–PT)/Pt/Si thick film fabricated by the aerosol deposition technique to artificially induce ferroelectric behaviour.

Investigation Of Ferroelectric Properties of Rochelle Salt Type Crystals Using A Modified Model

Rochelle salt type crystals show ferroelectricity. Previously suggested model is little modified to explain ferroelectric behaviour of three crystals. Simple Green’s function approach is used to obtain normal mode frequency formula. This frequency is calculated for different temperatures for Rochelle salt crystal. Theoretical results are compared with others experimental data formulae for dielectric constant and spontaneous polarization are obtained. Values are calculated for Rochelle salt crystal and compared with experimental data of F. Sandy and R. V. Jones (1968).

Dipolar relaxation in thin films of supramolecular stacks of benzenecarboxamides and insights to enhance their ferroelectric characteristics

The relationship between molecular structure and ferroelectric behaviour of thin films is explored in an all-organic supramolecular polymer material based on benzenecarboxamides, using atomistic molecular dynamics simulations.

Coexistence of relaxor behavior and ferromagnetic order in multiferroic Pb(Fe0.5Nb0.5)O3–BiFeO3 solid solution

The magnetic–ferroelectric phase diagram of the (1 − x)Pb(Fe1/2Nb1/2)O3–xBiFeO3 (x ≤ 0.3) solid solution system is constructed which shows the coexistence of relaxor ferroelectric behaviour and a weakly ferromagnetic state at room temperature.