A composite gate structure for enhanced-performance power MOS FET'S

This work investigates the different sensitivities of an ion-sensitive field-effect transistor (ISFET) based on fully depleted silicon-on-insulator (FDSOI). Using computer-aided design (TCAD) tools, the sensitivity of a single-gate FDSOI based ISFET (FDSOI-ISFET) at different temperatures and the effects of the planar dual-gate structure on the sensitivity are determined. It is found that the sensitivity increases linearly with increasing temperature, reaching 890 mV/pH at 75 °C. By using a dual-gate structure and adjusting the control gate voltage, the sensitivity can be reduced from 750 mV/pH at 0 V control gate voltage to 540 mV/pH at 1 V control gate voltage. The above sensitivity changes are produced because the Nernst limit changes with temperature or the electric field generated by different control gate voltages causes changes in the carrier movement. It is proved that a single FDSOI-ISFET can have adjustable sensitivity by adjusting the operating temperature or the control gate voltage of the dual-gate device.

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Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

Nanoscale Research Letters ◽

10.1186/s11671-020-03384-z ◽

2020 ◽

Vol 15 (1) ◽

Author(s):

Siqing Zhang ◽

Yan Liu ◽

Jiuren Zhou ◽

Meng Ma ◽

Anyuan Gao ◽

...

Keyword(s):

Low Voltage ◽

Gate Structure ◽

Ferroelectric Memory

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A high power MOSFET with a vertical drain electrode and a meshed gate structure

IEEE Journal of Solid-State Circuits ◽

10.1109/jssc.1976.1050761 ◽

1976 ◽

Vol 11 (4) ◽

pp. 472-477 ◽

Cited By ~ 14

Author(s):

I. Yoshida ◽

M. Kubo ◽

S. Ochi

Keyword(s):

High Power ◽

Power Mosfet ◽

Vertical Drain ◽

Gate Structure ◽

Drain Electrode

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Simulation and Optimization of a Carbon Nanotube Electron Source

Microscopy and Microanalysis ◽

10.1017/s1431927615013148 ◽

2015 ◽

Vol 21 (S4) ◽

pp. 60-65 ◽

Cited By ~ 1

Author(s):

Alexandr Knápek ◽

Tomáš Radlička ◽

Stanislav Krátký

Keyword(s):

Carbon Nanotube ◽

Electron Beam Lithography ◽

Fabrication Method ◽

Vertically Aligned Carbon Nanotubes ◽

Simulation And Optimization ◽

Gate Structure ◽

Aligned Carbon Nanotubes ◽

Electric Behavior ◽

Vertically Aligned ◽

Structure Calculations

AbstractThis paper deals with an optimization of a field-emission structure concept based on vertically aligned carbon nanotubes (CNT). A design concept for a fabrication method for a gate structure based on electron beam lithography is reviewed in the first part of the paper. A single carbon nanotube is grown by the PECVD method inside the gate structure. Calculations and simulations that help determine gate structure proportions in order to obtain the best possible electron reduced brightness and to predict the cathode's electric behavior are also essential parts of this study.

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