Mapping Conductance and Switching Behavior of Graphene Devices In Situ

Small Methods ◽  
2021 ◽  
pp. 2101245
Author(s):  
Ondrej Dyck ◽  
Jacob L. Swett ◽  
Charalambos Evangeli ◽  
Andrew R. Lupini ◽  
Jan A. Mol ◽  
...  
2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Marco Gobbi ◽  
Agostino Galanti ◽  
Marc-Antoine Stoeckel ◽  
Bjorn Zyska ◽  
Sara Bonacchi ◽  
...  

Abstract Mastering the dynamics of molecular assembly on surfaces enables the engineering of predictable structural motifs to bestow programmable properties upon target substrates. Yet, monitoring self-assembly in real time on technologically relevant interfaces between a substrate and a solution is challenging, due to experimental complexity of disentangling interfacial from bulk phenomena. Here, we show that graphene devices can be used as highly sensitive detectors to read out the dynamics of molecular self-assembly at the solid/liquid interface in-situ. Irradiation of a photochromic molecule is used to trigger the formation of a metastable self-assembled adlayer on graphene and the dynamics of this process are monitored by tracking the current in the device over time. In perspective, the electrical readout in graphene devices is a diagnostic and highly sensitive means to resolve molecular ensemble dynamics occurring down to the nanosecond time scale, thereby providing a practical and powerful tool to investigate molecular self-organization in 2D.


Author(s):  
Sungkyu Son ◽  
Seungjoon Jeon ◽  
Jangwon Oh ◽  
Won Kim ◽  
Hojoung Kim ◽  
...  

Abstract It is important to understand the switching mechanism of phase change material for failure analysis of PRAM device. In this study, the real time observations of phase transition and void formation mechanism of confined GST structure were investigated using in-situ TEM with multi-pulse AC biasing technique. In-situ SET switching behavior between amorphous state and crystalline state with continuous structural change was successfully observed. Volume shrink of GST, due to the phase transition, induced voids at grain boundary of crystalline phase. Excess Joule-heating after crystallization caused coalescence and migration of voids. These results may give us a crucial clue for endurance failure analysis of PRAM.


1995 ◽  
Vol 393 ◽  
Author(s):  
Katsuhiko Naoi ◽  
Yasushi Oura

ABSTRACTThe electropolymerized polypyrrole films formed from micellar solution of anionic surfactants, viz., Dodecylbenzene sulfonate(DBS), showed potential-dependent anion and cation ion switching behavior and the peculiar columnar structure. The formation process and the redox of the polypyrrole was studied with the in situ atomic force microscopy (AFM) and electrochemical quartz crystal microbalance(EQCM) methods. In-situ AFM observation clearly indicated that such a columnar structure started to form around critical charge densities of 60-100 mC cm−2. The cyclic voltammogram for the PPy doped with DBS− film showed two redox couples, each of which corresponds to a cation and an anion exchange process. Thus, the film behaves as a dual-mode ion doping/undoping exchanger. As the PPy film was prepared in higher concentration of the surfactant dopant, where the micelles are formed in solution, the resulting film showed a considerably higher(ca. three orders of magnitude) diffusion coefficient compared to ordinary PPy films so far reported. Such an enhanced diffusivity of ions could be attributed to a peculiar structure of the polymer formed. The feasibility of such polypyrrole in use of supercapacitor material was discussed.


2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Libei Huang ◽  
Jianjun Su ◽  
Yun Song ◽  
Ruquan Ye

Abstract The discovery of laser-induced graphene (LIG) from polymers in 2014 has aroused much attention in recent years. A broad range of applications, including batteries, catalysis, sterilization, and separation, have been explored. The advantages of LIG technology over conventional graphene synthesis methods are conspicuous, which include designable patterning, environmental friendliness, tunable compositions, and controllable morphologies. In addition, LIG possesses high porosity, great flexibility, and mechanical robustness, and excellent electric and thermal conductivity. The patternable and printable manufacturing process and the advantageous properties of LIG illuminate a new pathway for developing miniaturized graphene devices. Its use in sensing applications has grown swiftly from a single detection component to an integrated smart detection system. In this minireview, we start with the introduction of synthetic efforts related to the fabrication of LIG sensors. Then, we highlight the achievement of LIG sensors for the detection of a diversity of stimuli with a focus on the design principle and working mechanism. Future development of the techniques toward in situ and smart detection of multiple stimuli in widespread applications will be discussed.


Langmuir ◽  
2010 ◽  
Vol 26 (15) ◽  
pp. 12926-12932 ◽  
Author(s):  
Dennis Aulich ◽  
Olha Hoy ◽  
Igor Luzinov ◽  
Martin Brücher ◽  
Roland Hergenröder ◽  
...  

2012 ◽  
Vol 18 (S2) ◽  
pp. 1906-1907
Author(s):  
D. Ko ◽  
S. Kim ◽  
T. Ahn ◽  
S. Kim ◽  
Y. Oh ◽  
...  

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.


1994 ◽  
Vol 361 ◽  
Author(s):  
Michael O. Eatough ◽  
Duane Dimos ◽  
Bruce A. Tuttle ◽  
William L. Warren ◽  
R. Ramesh

ABSTRACTPb(Zr,Ti)O3 (PZT) thin films are being developed for use in optical and electronic memory devices. To study ferroelectric switching behavior, we have produced relatively untextured PZT thin films on Si substrates. We have developed a method for using x-ray diffraction to observe domain switching in situ. Our study involved the use of a micro-diffractometer to monitor the switching behavior in relatively small (0.7mm diameter) electroded areas. Diffraction analyses were done while DC voltages were applied and removed, representing several places in the hysteresis loop. In particular, we were looking for relative intensity changes in the [h 00],[00l] diffraction peaks as a function of position in the hysteresis loop. Our study indicates that the 90° domain switching exhibited by bulk ferroelectrics, is very limited in films on Si when grain sizes are less than about 1 μm.


2014 ◽  
Vol 105 (11) ◽  
pp. 113504 ◽  
Author(s):  
D. S. Hong ◽  
W. X. Wang ◽  
Y. S. Chen ◽  
J. R. Sun ◽  
B. G. Shen

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