Electron Spectroscopy of Metallic Systems

1984 ◽  
pp. 709-759 ◽  
Author(s):  
P. J. Durham
Keyword(s):  
Electron Spectroscopy ◽  
Metallic Systems

A standard for transmission electron spectroscopy

1978 ◽  
Vol 36 (1) ◽  
pp. 530-531 ◽  
Author(s):  
Dennis Maher ◽  
David Joy ◽  
Peggy Mochel
Keyword(s):  
Thin Films ◽  
Electron Spectroscopy ◽  
Host Lattice ◽  
Single Element ◽  
Multicomponent Systems ◽  
Transmission Electron ◽  
Major Interest ◽  
Standard Specimens ◽  
Forms Of Carbon ◽  
Electron Energy Loss

A variety of standard specimens is needed in order to systematically investigate the instrumentation, specimen, data reduction and quantitation variables in electron energy-loss spectroscopy (EELS). Pure single element specimens (e.g. various forms of carbon) have received considerable attention to date but certain elements of interest cannot be prepared directly as thin films. Since studies of the first and second row elements in two- or multicomponent systems will be of considerable importance in microanalysis using EELS, there is a need for convenient standards containing these species. For many investigations a standard should contain the desired element, or elements, homogeneously dispersed through a suitable matrix and at an accurately known concentration. These conditions may be met by the technique of implantation.Silicon was chosen as the host lattice since its principal ionization energies, EL23 = 98 eV and Ek = 1843 eV, are well removed from the K-edges of most elements of major interest such as boron (Ek = 188 eV), carbon (Ek = 283 eV), nitrogen (Ek = 400 eV) and oxygen (Ek = 532 eV).

Valence electron spectroscopy of inhomogeneous media

1992 ◽  
Vol 50 (2) ◽  
pp. 1150-1151
Author(s):  
A. Howie ◽  
D.W. McComb
Keyword(s):  
Specific Gravity ◽  
Loss Function ◽  
Electron Spectroscopy ◽  
Valence Electron ◽  
Peak Height ◽  
Loss Functions ◽  
Loss Peak ◽  
High Energies ◽  
Valence Electron Density ◽  
Electron Microscopist

The bulk loss function Im(-l/ε (ω)), a well established tool for the interpretation of valence loss spectra, is being progressively adapted to the wide variety of inhomogeneous samples of interest to the electron microscopist. Proportionality between n, the local valence electron density, and ε-1 (Sellmeyer's equation) has sometimes been assumed but may not be valid even in homogeneous samples. Figs. 1 and 2 show the experimentally measured bulk loss functions for three pure silicates of different specific gravity ρ - quartz (ρ = 2.66), coesite (ρ = 2.93) and a zeolite (ρ = 1.79). Clearly, despite the substantial differences in density, the shift of the prominent loss peak is very small and far less than that predicted by scaling e for quartz with Sellmeyer's equation or even the somewhat smaller shift given by the Clausius-Mossotti (CM) relation which assumes proportionality between n (or ρ in this case) and (ε - 1)/(ε + 2). Both theories overestimate the rise in the peak height for coesite and underestimate the increase at high energies.

Grain boundary segregation in metals

1992 ◽  
Vol 50 (2) ◽  
pp. 1204-1205
Author(s):  
C.L. Briant
Keyword(s):  
Fracture Surface ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Material Properties ◽  
Electron Spectroscopy ◽  
High Vacuum ◽  
Boundary Segregation ◽  
Grain Boundary Segregation ◽  
Local Concentration ◽  
The One

Grain boundary segregation is the process by which solute elements in a material diffuse to the grain boundaries, become trapped there, and increase their local concentration at the boundary over that in the bulk. As a result of this process this local concentration of the segregant at the grain boundary can be many orders of magnitude greater than the bulk concentration of the segregant. The importance of this problem lies in the fact that grain boundary segregation can affect many material properties such as fracture, corrosion, and grain growth.One of the best ways to study grain boundary segregation is with Auger electron spectroscopy. This spectroscopy is an extremely surface sensitive technique. When it is used to study grain boundary segregation the sample must first be fractured intergranularly in the high vacuum spectrometer. This fracture surface is then the one that is analyzed. The development of scanning Auger spectrometers have allowed researchers to first image the fracture surface that is created and then to perform analyses on individual grain boundaries.

Angular Resolved Electron Spectroscopy with Parallel Recording

1990 ◽  
Vol 48 (2) ◽  
pp. 370-371
Author(s):  
Huang Min ◽  
P.S. Flora ◽  
C.J. Harland ◽  
J.A. Venables
Keyword(s):  
Electron Spectroscopy ◽  
Low Voltage ◽  
Solid Angle ◽  
Detection System ◽  
Voltage Electron ◽  
Cylindrical Mirror ◽  
Inner Radius ◽  
Channel Plate ◽  
And Performance ◽  
Type Detector

A cylindrical mirror analyser (CMA) has been built with a parallel recording detection system. It is being used for angular resolved electron spectroscopy (ARES) within a SEM. The CMA has been optimised for imaging applications; the inner cylinder contains a magnetically focused and scanned, 30kV, SEM electron-optical column. The CMA has a large inner radius (50.8mm) and a large collection solid angle (Ω > 1sterad). An energy resolution (ΔE/E) of 1-2% has been achieved. The design and performance of the combination SEM/CMA instrument has been described previously and the CMA and detector system has been used for low voltage electron spectroscopy. Here we discuss the use of the CMA for ARES and present some preliminary results.The CMA has been designed for an axis-to-ring focus and uses an annular type detector. This detector consists of a channel-plate/YAG/mirror assembly which is optically coupled to either a photomultiplier for spectroscopy or a TV camera for parallel detection.

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

CORE ELECTRON SPECTROSCOPY OF SURFACE LAYERS ON LIQUID SUBSTRATES

1987 ◽  
Vol 48 (C9) ◽  
pp. C9-955-C9-959 ◽  
Author(s):  
S. HOLMBERG ◽  
R. MOBERG ◽  
O. BOHMAN ◽  
H. SIEGBAHN
Keyword(s):  
Electron Spectroscopy ◽  
Surface Layers ◽  
Core Electron

Solid-surface electron spectroscopy

1982 ◽  
Vol 136 (1) ◽  
pp. 105 ◽  
Author(s):  
M.V. Gomoyunova
Keyword(s):  
Solid Surface ◽  
Electron Spectroscopy ◽  
Surface Electron

The Effects of Nitrogen on Electrical and Structural Properties in TaSixNy/SiO2/p-Si MOS Capacitors

2002 ◽  
Vol 716 ◽  
Author(s):  
You-Seok Suh ◽  
Greg Heuss ◽  
Jae-Hoon Lee ◽  
Veena Misra
Keyword(s):  
Structural Properties ◽  
Electron Spectroscopy ◽  
Oxygen Diffusion ◽  
Gate Dielectric ◽  
Barrier Properties ◽  
Reaction Rates ◽  
Cross Sectional ◽  
Mos Capacitors ◽  
Transmission Electron ◽  
Thermal Stability Of

AbstractIn this work, we report the effects of nitrogen on electrical and structural properties in TaSixNy /SiO2/p-Si MOS capacitors. TaSixNy films with various compositions were deposited by reactive sputtering of TaSi2 or by co-sputtering of Ta and Si targets in argon and nitrogen ambient. TaSixNy films were characterized by Rutherford backscattering spectroscopy and Auger electron spectroscopy. It was found that the workfunction of TaSixNy (Si>Ta) with varying N contents ranges from 4.2 to 4.3 eV. Cross-sectional transmission electron microscopy shows no indication of interfacial reaction or crystallization in TaSixNy on SiO2, resulting in no significant increase of leakage current in the capacitor during annealing. It is believed that nitrogen retards reaction rates and improves the chemical-thermal stability of the gate-dielectric interface and oxygen diffusion barrier properties.

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