Stable colossal permittivity and low loss in (In0.5Nb0.5)0.005Ti0.995O2 + x mol% ZrTiO4 composite ceramics under DC bias voltage

2018 ◽  
Vol 29 (21) ◽  
pp. 18441-18448 ◽  
Author(s):  
Xiulei Cui ◽  
Peng Liu ◽  
Baochun Guo ◽  
Yuechan Song
Keyword(s):  
Bias Voltage ◽  
Composite Ceramics ◽  
Low Loss ◽  
Dc Bias ◽  
Colossal Permittivity

scholarly journals Investigation of the Carrier Movement through the Tunneling Junction in the InGaP/GaAs Dual Junction Solar Cell Using the Electrically and Optically Biased Photoreflectance Spectroscopy

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 638
Author(s):  
Sanam SaeidNahaei ◽  
Hyun-Jun Jo ◽  
Sang Jo Lee ◽  
Jong Su Kim ◽  
Sang Jun Lee ◽  
...  
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Electric Fields ◽  
Bias Voltage ◽  
Tunnel Junction ◽  
Photogenerated Carrier ◽  
Internal Electric Field ◽  
Junction Solar Cell ◽  
Photoreflectance Spectroscopy ◽  
Dc Bias

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n junction electric fields (Fpn) was perturbed by the external DC bias voltage and CW light intensity for EBPR and OBPR experiments, respectively. Moreover, the Fpn was evaluated using the Fast Fourier Transform (FFT) of the Franz—Keldysh oscillation from PR spectra. In the EBPR, the electric field decreased by increasing the DC bias voltage, which also decreased the potential barrier. In OBPR, when incident CW light is absorbed by the top cell, the decrement of the Fpn in the GaAs cell indicates that the photogenerated carriers are accumulated near the p-n junction. Photogenerated carriers in InGaP can pass through the tunnel junction, and the PR results show the contribution of the modification of the electric field by the photogenerated carriers in each cell. We suggest that PR spectroscopy with optical-bias and electrical-bias could be analyzed using the information of the photogenerated carrier passed through the tunnel junction.

Frequency and dc bias voltage dependent dielectric properties and electrical conductivity of BaTiO3SrTiO3/(SiO2)x nanocomposites

2019 ◽  
Vol 45 (9) ◽  
pp. 11989-12000 ◽  
Author(s):  
Y. Slimani ◽  
B. Unal ◽  
E. Hannachi ◽  
A. Selmi ◽  
M.A. Almessiere ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Dielectric Properties ◽  
Bias Voltage ◽  
Voltage Dependent ◽  
Dc Bias

scholarly journals Critical Parameters and Influence on Dynamic Behaviours of Nonlinear Electrostatic Force in a Micromechanical Vibrating Gyroscope

2020 ◽  
Vol 2020 ◽  
pp. 1-15
Author(s):  
Shuying Hao ◽  
Yulun Zhu ◽  
Yuhao Song ◽  
Qichang Zhang ◽  
Jingjing Feng ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Bias Voltage ◽  
Electrostatic Force ◽  
Dynamic Performance ◽  
Great Influence ◽  
Critical Parameters ◽  
Multiple Time Scales ◽  
Multiple Time ◽  
Element Analysis ◽  
Dc Bias

The electrostatic force nonlinearity caused by fringe effects of the microscale comb will affect the dynamic performance of the micromechanical vibrating gyroscopes (MVGs). In order to reveal the influence mechanism, a class of four-degree-of-freedom (4-DOF) electrostatically driven MVG is considered. The influence of DC bias voltage and comb spacing on the nonlinearity of electrostatic force and the dynamic response of the MVG by using multiple time scales method and numerical simulation are discussed. The results indicate that the electrostatic force nonlinearity causes the system to show stiffness softening. The softening characteristics of the electrostatic force cause the offset of the resonance frequency and a decrease in sensitivity. Although the electrostatic nonlinearity has a great influence on the dynamic behaviour, its influence can be avoided by the reasonable design of the comb spacing and DC bias voltage. There exists a critical value for comb spacing and DC bias voltage. In this paper, determining the critical values is demonstrated by nonlinear dynamics analysis. The results can be supported by the finite element analysis and numerical simulation.

Zirconia Coatings Deposited by Inductively Coupled Plasma Assisted CVD

1998 ◽  
Vol 555 ◽  
Author(s):  
P. Colpo ◽  
G. Ceccone ◽  
B. Leclercq ◽  
P. Salvatore ◽  
F. Rossi
Keyword(s):  
Thin Films ◽  
Bias Voltage ◽  
Inductively Coupled Plasma ◽  
Gas Mixture ◽  
Negative Bias ◽  
Negative Bias Voltage ◽  
Inductively Coupled ◽  
Deposition Parameters ◽  
Coating Characteristics ◽  
Dc Bias

AbstractThin films of zirconia have been deposited by an Inductively Coupled Plasma Assisted CVD (ICP-PACVD) reactor from tetra (tert-butoxy)-zircon precursor diluted in Ar and O2 gas mixture. An independent RF generator is used to control carefully the substrate negative bias voltage during the deposition. Zirconia thin films, with thickness up to 10 microns were deposited on Si (100) polished wafers under different plasma conditions. Correlation between deposition parameters, and microstructure has been established showing that the ion bombardment has a large influence on the coating characteristics. In particular, the possibility of tailoring mechanical properties of the films by controlling the applied DC bias voltage is discussed.

scholarly journals Field-enhanced bulk conductivity and resistive-switching in Ca-doped BiFeO3 ceramics

2014 ◽  
Vol 16 (36) ◽  
pp. 19408-19416 ◽  
Author(s):  
Nahum Masó ◽  
Héctor Beltrán ◽  
Marta Prades ◽  
Eloisa Cordoncillo ◽  
Anthony R. West
Keyword(s):  
Bias Voltage ◽  
Resistive Switching ◽  
Room Temperature ◽  
Bulk Conductivity ◽  
Dc Bias

The conductivity at room temperature of Ca-doped BiFeO3 ceramics increases reversibly under the influence of a small dc bias voltage.

Nonequilibrium Green’s Function Approach to Dynamic Properties of Resonant-Tunneling through Double-Barrier Structures

1992 ◽  
Vol 06 (07) ◽  
pp. 1099-1118
Author(s):  
L.Y. Chen ◽  
C.S. Ting
Keyword(s):  
Green’S Function ◽  
Bias Voltage ◽  
Green's Function ◽  
Resonant Tunneling ◽  
Dynamic Properties ◽  
Function Technique ◽  
Double Barrier ◽  
Nonequilibrium Green's Function ◽  
Dc Bias ◽  
Nonequilibrium Green’S Function

In this paper, we review a recently developed approach to the dynamic properties of double barrier resonant tunneling systems, based on the nonequilibrium Green’s function technique and the Feynman path integral theory. The transient behavior of tunneling current, immediately after the switch-on of a dc bias voltage, is characterized by the building up process of tunneling electrons in the quantum well. The novel negative differential conductance demonstrates itself as a function of frequency of the small ac signal imposed upon a dc bias. The imaginary part of admittance is shown to be related to the conductance via a Kronig-Kramers relation. The noise characteristics clearly demonstrate a strong time correlation derived from the Pauli exclusion principle and have evident dependence upon the structure parameters and the bias voltage. All those theoretical results are compared with experiments and numerical simulations.

scholarly journals Origin(s) of the apparent colossal permittivity in (In1/2Nb1/2)xTi1−xO2: clarification on the strongly induced Maxwell–Wagner polarization relaxation by DC bias

RSC Advances ◽  
2017 ◽  
Vol 7 (1) ◽  
pp. 95-105 ◽  
Author(s):  
Wattana Tuichai ◽  
Supamas Danwittayakul ◽  
Narong Chanlek ◽  
Pornjuk Srepusharawoot ◽  
Prasit Thongbai ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Dc Bias ◽  
Colossal Permittivity ◽  
Co Doped

The effects of DC bias on the dielectric and electrical properties of co-doped (In1/2Nb1/2)xTi1−xO2 (IN-T), where x = 0.05 and 0.1, and single-doped Ti0.975Nb0.025O2 ceramics are investigated.

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