Preparation of low cost NaCl single crystal for IR optical window applications

Author(s):  
V. C. Bharath Sabarish ◽  
A. Durairajan ◽  
J. Gajendiran ◽  
B. N. Rajasekhar ◽  
Asim Kumar Das ◽  
...  
2013 ◽  
Vol 747-748 ◽  
pp. 478-482 ◽  
Author(s):  
Jian Wei Xu ◽  
Yun Song Zhao ◽  
Ding Zhong Tang

The tensile properties of a low-cost first generation single crystal superalloy DD16 have been investigated. The results show that values of the tensile strength and yield strength of DD16 alloy were similar at typical temperatures; from room temperature to 760, the yield strength of DD16 alloy increases; However, above 760, the yield strength of DD16 alloy decreases remarkably, and the maximum of the yield strength was 1145.5MPa at 760. From room temperature to 760, the fracture mode was cleavage fracture; But above 760, the fracture characteristics changed from cleavage to dimple.


2021 ◽  
Vol 168 ◽  
pp. 659-667
Author(s):  
Peter Dingus ◽  
James Garnett ◽  
Shumin Wang ◽  
Chaehwi Chong
Keyword(s):  

1987 ◽  
Vol 65 (8) ◽  
pp. 892-896 ◽  
Author(s):  
R. E. Thomas ◽  
C. E. Norman ◽  
S. Varma ◽  
G. Schwartz ◽  
E. M. Absi

A low-cost, high-yield technology for producing single-crystal silicon solar cells at high volumes, and suitable for export to developing countries, is described. The process begins with 100 mm diameter as-sawn single-crystal p-type wafers with one primary flat. Processing steps include etching and surface texturization, gaseous-source diffusion, plasma etching, and contacting via screen printing. The necessary adaptations of such standard processes as diffusion and plasma etching to solar-cell production are detailed. New process developments include a high-throughput surface-texturization technique, and automatic printing and firing of cell contacts.The technology, coupled with automated equipment developed specifically for the purpose, results in solar cells with an average efficiency greater than 12%, a yield exceeding 95%, a tight statistical spread on parameters, and a wide tolerance to starting substrates (including the first 100 mm diameter wafers made in Canada). It is shown that with minor modifications, the present single shift 500 kWp (kilowatt peak) per year capacity technology can be readily expanded to 1 MWp per year, adapted to square and polycrystalline substrates, and efficiencies increased above 13%.


2010 ◽  
Vol 447-448 ◽  
pp. 106-110 ◽  
Author(s):  
H. Takahashi ◽  
Y.B. Tian ◽  
Y. Mikami ◽  
J. Shimizu ◽  
Li Bo Zhou ◽  
...  

Chemo-mechanical grinding (CMG) process is a promising process for large-sized Si substrate fabrication at low cost. However, effect of additive in CMG wheel is not completely understood yet. In this paper, three different CMG wheels were developed, in which one excluded additive and the other two contained two kinds of additive i.e. silicon dioxide and sodium carbonate. Grinding experiments were conducted to explore the influence of exclusion of additive and inclusion of different kinds of additive on CMG performance. The grinding characteristics of the three wheels were also analyzed and discussed to reveal the roles of wheel compositions in CMG process. This work provides some fundamental insights for the selection of different types of additive for optimization of CMG wheel.


1996 ◽  
Vol 426 ◽  
Author(s):  
Shalini Menezes

AbstractElectrochemical deposition of CuInSe2 films has been explored as a low-cost alternative to vacuum deposition. A special feature of this approach is that each element or compound may be selectively deposited or dissolved at a specific potential. This approach could further provide an environmentally benign means to recycle CuInSe2 from spent or defective modules. The paper investigates the reaction mechanisms for co-deposition, as well as, removal of CuInSe2. Rotating ring-disk and photoelectrochemical methods probe the formation and dissolution of Se, Cu2Se, In2Se3 and CuInSe2 films and the corrosion of CuInSe2 single crystal. The results provide important insights into the multiple reaction paths leading to the electrosynthesis of CuInSe2 films and new directions for developing an electrochemical recycling scheme for CuInSe2 modules.


Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3057
Author(s):  
Ulrich Johannes Bahnmüller ◽  
Henning Kuper ◽  
Tobias Seewald ◽  
Yenal Yalҫinkaya ◽  
Jörg August Becker ◽  
...  

Hybrid perovskite materials are one of the most promising candidates for optoelectronic applications, e.g., solar cells and LEDs, which can be produced at low cost compared to established materials. Although this field of research has seen a huge upsurge in the past decade, there is a major lack in understanding the underlying processes, such as shape-property relationships and the role of defects. Our aerosol-assisted synthesis pathway offers the possibility to obtain methylammonium lead bromide (MAPbBr3) microcrystals from a liquid single source precursor. The differently shaped particles are aligned on several substrates, without using a directing agent or other additives. The obtained particles show good stability under dry conditions. This allows us to characterize these materials and their pure surfaces at the single-crystal level using time- and spatially resolved methods, without any influences of size-dependent effects. By optimizing the precursor for the aerosol process, we were able to eliminate any purification steps and use the materials as processed. In addition, we performed theoretical simulations to deepen the understanding of the underlying processes in the formation of the different crystal facets and their specific properties. The model system presented provides insights into the shape-related properties of MAPbBr3 single crystals and their directed but ligand-free synthesis.


2021 ◽  
Vol 16 (5) ◽  
pp. 707-714
Author(s):  
Yan Chen ◽  
Siwen Tao ◽  
Yaqi Liu ◽  
Xuewei Fu ◽  
Mengyi Pei ◽  
...  

Inorganic-organic hybrid perovskite (ABX3, A = organic cation, B = metal ion, X = halogen anion) combines the advantages of inorganic and organic materials. However, the properties and performance of mixed-halide CH3NH3PbBr2.5Cl0.5 (MAPbBr2.5Cl0.5) are still poorly understood. In this study, we synthetized MAPbBr2.5Cl0.5 single crystal and studied its structure, optical, thermal stability properties and optoelectronics applications for photodetector device. Compared with those of MAPbCl3, the interplanar distance of (100) crystal plane for MAPbBr2.5Cl0.5 becomes larger and the absorption spectrum of MAPbBr2.5Cl0.5 is extended to the visible region. The band gap of the MAPbBr2.5Cl0.5 single crystal is 2.28 eV. We find the device based on MAPbBr2.5Cl0.5 has high selectivity from 369 to 564 nm. The maximum ▴J (Jon– Joff) under 3.0 V bias voltage is about 1.2 µAcmr-2 at 454 nm visible light with 1 W mr-2 light intensity (1/1000 of the standard sunlight intensity), which proves the device has a high sensitivity. The linear relationship is established between the value of ▴J and light intensity and bias voltage. The fast current intensity transients (Fit) shows that the disappearance period of photocurrent density is 0.3 ms, which indicates the device is rapidly responsive photodetector. The highest value (1.7%) of external quantum efficiency (EQE) and the highest value of detectivities (D) both appear at 480 nm visible light at 4.0 V bias voltage when the irradiation power is 30 W m-2. Therefore, this simple and low-cost photoresponsive device is promising for industrial production of photodetector and photocatalysts device in the future.


2014 ◽  
Vol 778-780 ◽  
pp. 771-775 ◽  
Author(s):  
Hiroto Maeda ◽  
Ryuichi Takanabe ◽  
Atsunori Takeda ◽  
Syogo Matsuda ◽  
Tomohisa Kato

Development of high efficient and high accuracy slice processing technology is required for realizing the high quality and low cost large SiC wafer. Our target of high speed slicing is slicing a 6 inch SiC single crystal ingot in about 9 hours. This slicing speed is about 10 times higher than the loose abrasive slurry sawing and about 4 times higher than the current technology of diamond wire sawing. The slicing speed and the slicing accuracy are in the relationship of trade-off. Therefore, in this research, we have studied the high speed slicing technique of 3 inch and 4 inch SiC single crystal ingot aiming at reduction of sliced wafers SORI. Moreover, we have extracted subjects to scale-up for the high speed slicing of the 6 inch SiC single crystal ingot.


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