Rapid Optical Annealing for Improved GaAs Fet Uniformity

1985 ◽  
Vol 52 ◽  
Author(s):  
Thomas E. Kazior ◽  
Kamal Tabatabaie-Alavi
Keyword(s):  
Low Noise ◽  
Drift Mobility ◽  
Gate Length ◽  
Furnace Annealing ◽  
Zero Bias ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Performance Results ◽  
Doping Profiles ◽  
Excellent Reproducibility

ABSTRACTAn Eaton Nova Rapid Optical Annealer (ROA 400) has been used to activate n and n+ Si implants for use in power and low noise FET structures for GaAs MMIC's. PECVD SiN capped 3" SI GaAs wafers were annealed at temperatures ranging from 800 to 970 °C for times ranging from 0 (transient light pulse) to 20 sec. Doping profiles were determined using a Polaron concentration profiler; FATFET's were used for measuring drift mobility; and short gate (l.0μm gate length) FET's were fabricated to establish activation uniformity and to determine d.c. and r.f. performance. Results have indicated peak implant activation as high as 90% and electron mobilities of up to 4700cm2/V-sec for carrier concentrations of 1.3×1017/cm3 – results comparable to conventional furnace annealing. The most significant improvement of optical annealing comes in device uniformity. Saturated current uniformities of < ±3% have been achieved over 3" wafers with excellent reproducibility from wafer to wafer. Power FET structures with zero bias gm of 120mS/mm with uniformities of <±5mS/mm have been measured. R.f. measurements on these devices yielded output powers of >500mW/mm with power added efficiencies as high as 35%.

omparisons of Silicide Formation by Rapid Thermal Annealing and Conventional Furnace Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
E. Ma ◽  
M. Natan ◽  
B.S. Lim ◽  
M-A. Nicolet
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Cross Sectional ◽  
Conventional Furnace ◽  
Diffusion Controlled ◽  
Conventional Furnace Annealing ◽  
Kinetics Of

ABSTRACTSilicide formation induced by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) in bilayers of sequentially deposited films of amorphous silicon and polycrystalline Co or Ni is studied with RBS, X-ray diffraction and TEM. Particular attention is paid to the reliability of the RTA temperature measurements in the study of the growth kinetics of the first interfacial compound, Co2Si and Ni2Si, for both RTA and CFA. It is found that the same diffusion-controlled kinetics applies for the silicide formation by RTA in argon and CFA in vacuum with a common activation energy of 2.1+0.2eV for Co2Si and 1.3+0.2eV for Ni Si. Co and Ni atoms are the dominant diffusing species; during silicide formation by both RTA and CFA. The microstructures of the Ni-silicide formed by the two annealing techniques, however, differs considerably from each other, as revealed by cross-sectional TEM studies.

A New Annealing Method to Obtain High Quality Poly-Si

1992 ◽  
Vol 283 ◽  
Author(s):  
Yoon-Ho Song ◽  
Jong-Tae Baek ◽  
Kee-Soo Nam ◽  
Sang-Won Kang
Keyword(s):  
Field Effect ◽  
Field Effect Mobility ◽  
High Quality ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Good Uniformity ◽  
Conventional Furnace Annealing ◽  
Annealing Method ◽  
Si Thin Film ◽  
Free Nucleus

ABSTRACTA new annealing method, a combination of rapid thermal annealing (RTA) and furnace annealing, has been developed to obtain a high quality poly-Si from a-Si deposited by LPCVD. This method produces a large grain poly-Si with good uniformity, which may result from the growth of relatively defect-free nucleus generated at a high temperature by RTA. Poly-Si thin film transistors fabricated by this new annealing method have higher field effect mobility and better uniformity compared with those by the conventional furnace annealing.

Quantum State in Solid-Phase Crystallization of a-Si:H by FA

2010 ◽  
Vol 44-47 ◽  
pp. 4154-4156
Author(s):  
Rui Min Jin ◽  
Ding Zhen Li ◽  
Lan Li Chen ◽  
Xiang Ju Han ◽  
Jing Xiao Lu
Keyword(s):  
Thin Film ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Quantum States ◽  
Solid Phase Crystallization ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Different Temperatures ◽  
Conventional Furnace Annealing ◽  
Electronic Microscope

Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by conventional furnace annealing (FA) at different temperatures. From the Raman spectra and scanning electronic microscope (SEM), it is found that the thin film grain size present quantum states with annealing temperature.

Rapid Thermal Annealing of High Energy Si Implants Into GaAs

1987 ◽  
Vol 92 ◽  
Author(s):  
Ronald N. Legge ◽  
Wayne M. Paulson
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ohmic Contacts ◽  
Low Dose ◽  
High Energy ◽  
Low Noise ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Capacitance Voltage ◽  
Lec Gaas

ABSTRACTRapid thermal annealing (RTA) technology offers potential advantages for the processing of ion implanted GaAs. High energy implants of 300 keV or above are used for power MESFETs as well as in the ohmic contacts for low noise devices. The purpose of this paper is to investigate and characterize the RTA of Si implants into LEC GaAs using implant energies of 300keV and above, and a range of doses from 2.3 ×1012 to 3×1014 /cm2. The wafers were analyzed using capacitance-voltage and Hall measurements. Factors which cause variability in pinchoff voltage are identified and an RTA process comparable to conventional furnace annealing is presented for low dose implants. Superior implant activation is observed for higher dose implants through the use of higher annealing temperature.

Smooth Silicide Formation by Ion Beam Mixing of Ti/Si-Layers

1986 ◽  
Vol 74 ◽  
Author(s):  
K. Kohlhof ◽  
S. Mantl ◽  
B. Stritzker
Keyword(s):  
Ion Beam ◽  
Liquid Nitrogen Temperature ◽  
Silicide Formation ◽  
Furnace Annealing ◽  
Ion Beam Mixing ◽  
X Ray ◽  
Surfaces And Interfaces ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Substrate Temperatures

AbstractIon beam mixing experiments of Ti-Si layers have been performed with Kr ions of 250 keV energy and doses ranging from 7 1015 to 7 1016 cm-2 at temperatures between liquid nitrogen temperature and 450°C. At substrate temperatures below 120°C no silicide formation could be detected. Only weak mixing at the Ti-Si interface is observed. At temperatures above 120°C the formation of TiSi2 could be verified by Rutherford backscattering and X-ray diffractometry. Layers of TiSi2 produced by ion beam mixing show smooth surfaces in contrast to those prepared by conventional furnace annealing. Those display rough surfaces and interfaces.

A comparative corrosion study of electroless Ni-P coatings treated by microwave and conventional furnace annealing

2014 ◽  
Vol 32 (1-2) ◽  
pp. 43-49
Author(s):  
M. Edwin Sahayaraj ◽  
Jepas T. Winowlin Jappes ◽  
Irulappasamy Siva ◽  
Murugan Sundaram Senthil Saravanan
Keyword(s):  
Heat Treatment ◽  
Corrosion Behavior ◽  
Steel Substrate ◽  
Corrosion Performance ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Heat Treated ◽  
Conventional Furnace Annealing ◽  
Corrosion Mechanisms ◽  
Electroless Ni

AbstractThis work aims at studying the corrosion behavior of electroless Ni-P coating on mild steel substrate heat-treated by microwave and conventional furnace (muffle) annealing. The corrosion behavior of the deposits has been evaluated by potentiodynamic polarization studies in 3.5 wt% sodium chloride solution. The heat treatment temperatures of both the microwave and the conventional furnace annealing were kept at regular intervals to study the corrosion performance of the coatings. Microwave heat treatment significantly improved the corrosion performance of the coatings. Further, corrosion mechanisms of as-coated, various microwave- and conventional heat-treated coatings were discussed for the consideration of phase constituents, grain sizes and microstrain.

Electrical Activation of Boron in B+ + C+ Implanted Si during RTA with Different Heating Rates

1994 ◽  
Vol 342 ◽  
Author(s):  
H. Boudinov ◽  
J.P. de Souza
Keyword(s):  
Point Defects ◽  
Annealing Time ◽  
Dwell Time ◽  
Electrical Activation ◽  
Heating Rates ◽  
Time Duration ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Deactivation Process

ABSTRACTSilicon samples were single implanted with B+ (5 x 1014 cm−2, 50 keV) or co-implanted with C+ (5 x 1015 cm−2, 55 keV). Rapid thermal annealing (RTA) with heating rates (HR) of 1°C/s and 100°C/s with dwell time duration from 2 s to 15 min was used for B activation and the results compared with those provided by conventional furnace annealing (FA) for 30 min. In single implanted samples it was found that below 600°C or above 800°C the activation always increases with the annealing time. However, in the temperature range of 600-800°C and annealing times longer than 60 s a fraction of the initially activated B concentration deactivates. For temperatures in the range of 700-800°C the deactivation is followed again by another activation period. There is no noticeable difference between the activation yields after RTA with high HR for 15 min or FA for 30 min. In the C co-implanted samples the activation of boron saturates after few minutes. In addition the deactivation process is significantly reduced. A model assuming interaction of the B atoms with point defects and the C atoms with Si self- interstitial atoms is proposed to explain the results.

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