scholarly journals Microwave Annealing of Ion Implanted 6H-SiC

1996 ◽  
Vol 430 ◽  
Author(s):  
J. A. Gardner ◽  
M. V. Rao ◽  
Y. L. Tian ◽  
O. W. Holland ◽  
G. Kelner ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Rapid Thermal Annealing ◽  
Photoluminescence Spectra ◽  
Furnace Annealing ◽  
Microwave Annealing ◽  
Conventional Furnace ◽  
Good Lattice ◽  
Lattice Damage ◽  
Conventional Furnace Annealing ◽  
Van Der Pauw

AbstractMicrowave rapid thermal annealing has been utilized to remove the lattice damage caused by nitrogen (N) ion-implantation as well as to activate the dopant in 6H-SiC. Samples were annealed at temperatures as high as 1400 °C, for 10 min. Van der Pauw Hall measurements indicate an implant activation of 36%, which is similar to the value obtained for the conventional furnace annealing at 1600 °C. Good lattice quality restoration was observed in the Rutherford backscattering and photoluminescence spectra.

omparisons of Silicide Formation by Rapid Thermal Annealing and Conventional Furnace Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
E. Ma ◽  
M. Natan ◽  
B.S. Lim ◽  
M-A. Nicolet
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Cross Sectional ◽  
Conventional Furnace ◽  
Diffusion Controlled ◽  
Conventional Furnace Annealing ◽  
Kinetics Of

ABSTRACTSilicide formation induced by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) in bilayers of sequentially deposited films of amorphous silicon and polycrystalline Co or Ni is studied with RBS, X-ray diffraction and TEM. Particular attention is paid to the reliability of the RTA temperature measurements in the study of the growth kinetics of the first interfacial compound, Co2Si and Ni2Si, for both RTA and CFA. It is found that the same diffusion-controlled kinetics applies for the silicide formation by RTA in argon and CFA in vacuum with a common activation energy of 2.1+0.2eV for Co2Si and 1.3+0.2eV for Ni Si. Co and Ni atoms are the dominant diffusing species; during silicide formation by both RTA and CFA. The microstructures of the Ni-silicide formed by the two annealing techniques, however, differs considerably from each other, as revealed by cross-sectional TEM studies.

scholarly journals Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC

2007 ◽  
Vol 36 (4) ◽  
pp. 324-331 ◽  
Author(s):  
SIDDARTH G. SUNDARESAN ◽  
MULPURI V. RAO ◽  
YONGLAI TIAN ◽  
JOHN A. SCHREIFELS ◽  
MARK C. WOOD ◽  
...  
Keyword(s):  
Solid State ◽  
Furnace Annealing ◽  
Microwave Annealing ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Ion Implanted

Rapid Themal Annealing of Shallow. Diffused Contact Regions in GaAs

1985 ◽  
Vol 52 ◽  
Author(s):  
N. J. Kepler ◽  
N. W. Cheung ◽  
P. K. Chu
Keyword(s):  
Thin Film ◽  
Rapid Thermal Annealing ◽  
High Intensity ◽  
Ohmic Contacts ◽  
Diffusion Profile ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Specific Contact ◽  
Heavily Doped ◽  
Conventional Furnace Annealing

ABSTRACTRapid thermal annealing (RTA) is used to form shallow and heavily-doped contact regions in undoped, semi-insulating GaAs. These layers are formed by using a high-intensity tungstenhalogen lamp to diffuse germanium and selenium from a deposited GeSe thin-film. RTA reduces surface degradation and permits better control of the diffusion profile than conventional furnace annealing. Optimal 20-second RTA occurs above a diffusion threshold at 950°C but below the failure of the SiO2 encapsulant at 1100°C. The n+ regions created have peak impurity concentrations over 1020/cm3 at depths under 750 Å with sheet resistances less than 60 Ω/▩. Non-alloyed ohmic contacts exhibit specific contact resistivites of 2.2 × 10−4 Ω · cm−2.

Rapid Thermal Annealing of Ion Implanted GaAs and InP

1983 ◽  
Vol 23 ◽  
Author(s):  
K.V. Vaidyanathan ◽  
H.L. Dunlap
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Intensity ◽  
Annealing Process ◽  
Electrical Activation ◽  
High Fluence ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Ion Implanted

ABSTRACTThis paper discusses the properties of high intensity lamp-annealed silicon or beryllium-implanted GaAs and InP samples. We find this annealing process can result in efficient activation of dopants. Conventional furnace annealing at the same temperature does not result in increased electrical activation of the dopants. High fluence silicon implants can be activated in anneal times as short as 2 seconds, while low fluence silicon implants require more extended annealing. Activation of low fluence implants in GaAs depends strongly on the properties of the bulk semiinsulating material.

Rapid Thermal Annealing of III–V Compound Materials

1983 ◽  
Vol 23 ◽  
Author(s):  
M. Kuzuhara ◽  
H. Kohzu ◽  
Y. Takayama
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Dose ◽  
Furnace Annealing ◽  
Promising Alternative ◽  
Gaas Mesfet ◽  
Annealing Conditions ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Compound Materials

ABSTRACTRapid thermal process utilizing radiation from halogen lamps has been used to post-anneal ion-implanted GaAs. Annealing conditions for Si implants in GaAs are discussed from the view point of applying this technique to GaAs MESFET fabrication. Also, the properties of S and Mg implants in GaAs followed by rapid thermal annealing are comparatively studied with the results after conventional furnace annealing. High electrical activation and minimized implant diffusion for both low and high dose implants are the principal features of this technique. The fabricated MESFET showed much higher transconductance without any anomalous characteristics, indicating this technique to be a promising alternative to conventional furnace annealing.

Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

Rapid Optical Annealing for Improved GaAs Fet Uniformity

1985 ◽  
Vol 52 ◽  
Author(s):  
Thomas E. Kazior ◽  
Kamal Tabatabaie-Alavi
Keyword(s):  
Low Noise ◽  
Drift Mobility ◽  
Gate Length ◽  
Furnace Annealing ◽  
Zero Bias ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Performance Results ◽  
Doping Profiles ◽  
Excellent Reproducibility

ABSTRACTAn Eaton Nova Rapid Optical Annealer (ROA 400) has been used to activate n and n+ Si implants for use in power and low noise FET structures for GaAs MMIC's. PECVD SiN capped 3" SI GaAs wafers were annealed at temperatures ranging from 800 to 970 °C for times ranging from 0 (transient light pulse) to 20 sec. Doping profiles were determined using a Polaron concentration profiler; FATFET's were used for measuring drift mobility; and short gate (l.0μm gate length) FET's were fabricated to establish activation uniformity and to determine d.c. and r.f. performance. Results have indicated peak implant activation as high as 90% and electron mobilities of up to 4700cm2/V-sec for carrier concentrations of 1.3×1017/cm3 – results comparable to conventional furnace annealing. The most significant improvement of optical annealing comes in device uniformity. Saturated current uniformities of < ±3% have been achieved over 3" wafers with excellent reproducibility from wafer to wafer. Power FET structures with zero bias gm of 120mS/mm with uniformities of <±5mS/mm have been measured. R.f. measurements on these devices yielded output powers of >500mW/mm with power added efficiencies as high as 35%.

Nitridation of vanadium in molecular nitrogen: a comparison of rapid thermal processing (RTP) and conventional furnace annealing

Vacuum ◽  
2001 ◽  
Vol 61 (2-4) ◽  
pp. 479-484 ◽  
Author(s):  
I Galesic ◽  
U Reusch ◽  
C Angelkort ◽  
H Lewalter ◽  
A Berendes ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Molecular Nitrogen ◽  
Rapid Thermal Processing ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing

A New Annealing Method to Obtain High Quality Poly-Si

1992 ◽  
Vol 283 ◽  
Author(s):  
Yoon-Ho Song ◽  
Jong-Tae Baek ◽  
Kee-Soo Nam ◽  
Sang-Won Kang
Keyword(s):  
Field Effect ◽  
Field Effect Mobility ◽  
High Quality ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Good Uniformity ◽  
Conventional Furnace Annealing ◽  
Annealing Method ◽  
Si Thin Film ◽  
Free Nucleus

ABSTRACTA new annealing method, a combination of rapid thermal annealing (RTA) and furnace annealing, has been developed to obtain a high quality poly-Si from a-Si deposited by LPCVD. This method produces a large grain poly-Si with good uniformity, which may result from the growth of relatively defect-free nucleus generated at a high temperature by RTA. Poly-Si thin film transistors fabricated by this new annealing method have higher field effect mobility and better uniformity compared with those by the conventional furnace annealing.

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