A High-Performance Ultraviolet Photoconductive Detector Based on a ZnO Film Grown by RF Sputtering

Bi-substituted iron garnet (Bi:IG) compounds synthesized in thin film form are the best semi-transparent magneto-optical (MO) materials for applications in magnetic recording, optical sensors, and photonics. These materials can possess attractive magnetic properties and the highest specific Faraday rotation in the visible and near-infrared spectral regions, if the deposited layers contain a high volumetric fraction of the garnet phase and possess high-quality surfaces and microstructure. In this paper, we study the effects of various deposition and annealing process parameters on the properties of Bi:IG and garnet-oxide nanocomposite films of several composition types fabricated using radio-frequency (RF) sputtering deposition followed by high-temperature isothermal crystallization. We also investigate the kinetics of garnet phase formation within a garnet-Bi-oxide nanocomposite material.

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Oxygen sensor utilizing ultraviolet irradiation assisted ZnO nanorods under low operation temperature

RSC Advances ◽

10.1039/c4ra05500d ◽

2014 ◽

Vol 4 (95) ◽

pp. 52903-52910 ◽

Cited By ~ 15

Author(s):

Chen-Shiun Chou ◽

Yung-Chen Wu ◽

Che-Hsin Lin

Keyword(s):

Uv Irradiation ◽

Ultraviolet Irradiation ◽

High Performance ◽

Oxygen Sensor ◽

Oxygen Sensing ◽

Zno Nanorods ◽

Zno Film ◽

Working Temperature ◽

Operation Temperature

This paper presents a novel ultraviolet (UV) irradiation assisted nanostructured ZnO film for high performance oxygen sensing under a low working temperature.

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Substrate Temperature Effects of the ZnO:AlF3Transparent Conductive Oxide

MRS Proceedings ◽

10.1557/opl.2012.1743 ◽

2013 ◽

Vol 1494 ◽

pp. 91-97

Author(s):

Tien-Chai Lin ◽

Wen-Chang Huang ◽

Chin-Hung Liu ◽

Shang-Chou Chang

Keyword(s):

Substrate Temperature ◽

Carrier Concentration ◽

Electron Mobility ◽

Thermal Effects ◽

Rf Sputtering ◽

Thin Film Deposition ◽

Film Deposition ◽

Zno Films ◽

Zno Film

ABSTRACTThermal effects on the crystal structure, electrical and optical characteristics of the Al and F co-doped ZnO films (ZnO:AlF3) are discussed in the paper. The ZnO:AlF3 thin films are prepared by RF sputtering with a constant power (ZnO/AlF3=100W/75W) toward the ZnO and AlF3 targets. The substrate temperature varied from room temperature to 250 °C with a step of 50 °C during thin film deposition. The crystalline quality of the ZnO:AlF3 film improved as the substrate temperature increased, with a corresponding increase in grain size. The improvement of the film quality leads to a higher electron mobility, with electron mobility of 0.85 cm2/V-s for the film deposited at the substrate temperature of 250 °C. The doping effect of fluorine in ZnO, and hence carrier concentration, was reduced at high temperature due to the vaporization of fluorine. This led to a reduction of carrier concentration with increase of temperature from 25 to 200°C. The corresponding resistivity increased from 3.60×10−2 to 6.0×10−2 Ω-cm. While for a further increase in substrate temperature, the doping of Al to the ZnO film was increased and resulted in an increase in carrier concentration.

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Growth of ZnO Thin Films on Sapphire Substrates by ECR-Assisted MBE

MRS Proceedings ◽

10.1557/proc-474-395 ◽

1997 ◽

Vol 474 ◽

Author(s):

Hee-Bog Kang ◽

Kiyoshi Nakamura ◽

Kazuo Ishikawa

Keyword(s):

Sapphire Substrate ◽

Electron Cyclotron Resonance ◽

Rf Sputtering ◽

Zno Films ◽

Zno Film ◽

Epitaxial Relationship ◽

Rocking Curve ◽

Sapphire Substrates ◽

Relationship Of ◽

Ecr Source

ABSTRACTEpitaxial ZnO films were grown on c-plane sapphire substrate at low temperature using the electron cyclotron resonance-assisted molecular beam epitaxy(ECR-assisted MBE) technique. In this method, Zn vapor provided by a Knudsen cell reacts with oxygen activated in an ECR source on the surface of sapphire substrate. The crystal structure, surface morphology and epitaxial relationship of the films were investigated. It was confirmed that the ECR-assisted MBE technique was capable of growing a high quality epitaxial ZnO films on c-plane sapphire substrates at low temperatures in comparison with CVD and RF sputtering. The FWHM of an x-ray rocking curve of the (0002) peak for a 0.33μ-thick ZnO film was as narrow as 0.58°. The epitaxial relationship between ZnO film and c-plane sapphire substrate was determined to be (0001)ZnO//(0001)Al2O3 with in-plane alignment of [1100]ZnO//[2110]Al2O3, which is equivalent to the 30° rotation of ZnO relative to sapphire in the c-plane.

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Preparation of a Non-Polar ZnO Film on a Single-Crystal NdGaO3 Substrate by the RF Sputtering Method

Journal of Electronic Materials ◽

10.1007/s11664-018-6283-9 ◽

2018 ◽

Vol 47 (8) ◽

pp. 4345-4350 ◽

Cited By ~ 1

Author(s):

Y. Kashiwaba ◽

Y. Tanaka ◽

M. Sakuma ◽

T. Abe ◽

Y. Imai ◽

...

Keyword(s):

Single Crystal ◽

Rf Sputtering ◽

Zno Film

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Investigation of Room Temperature Photoluminescence of ZnO Films Induced by Different Laser Fluence Irradiation

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.901.53 ◽

2014 ◽

Vol 901 ◽

pp. 53-58

Author(s):

Yong Zeng ◽

Yan Zhao ◽

Yi Jian Jiang

Keyword(s):

High Performance ◽

Room Temperature ◽

Optoelectronic Devices ◽

Photoluminescence Property ◽

Longitudinal Optical ◽

Zno Films ◽

Zno Film ◽

Neutral Donor ◽

Exciton Transition ◽

Room Temperature Photoluminescence

In this paper, we investigated the photoluminescence property of ZnO films which were irradiated by KrFexcimer laser. Through the analysis of photoluminescence and UV-VIS spectra, it is shown that the red shift of band gap forthe irradiated sample. Room temperature UV photoluminescence of ZnO film is composed of contribution from the FX, the neutral donor bound exciton (D0X) emission and the longitudinal optical (LO) phonon replicas of the bound exciton transition (D0X-1LO). The visible emission band is ascribed toVO+, VZn-, Oiand Vo++. It shows that KrF laser irradiation could effectively modulate the exciton emission, which is important for the application of high performance of emitting optoelectronic devices.

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Growth and Characterization of ZnO Thin Film by RF Magnetron Sputtering for Photoacoustic Tomography Sensor

MRS Proceedings ◽

10.1557/opl.2013.157 ◽

2013 ◽

Vol 1494 ◽

pp. 19-24 ◽

Cited By ~ 1

Author(s):

Takuya Matsuo ◽

Shuhei Okuda ◽

Katsuyoshi Washio

Keyword(s):

Magnetron Sputtering ◽

Quartz Substrate ◽

Rf Sputtering ◽

Rf Magnetron Sputtering ◽

Optical Transmittance ◽

Deposition Process ◽

Photoacoustic Tomography ◽

Diffraction Measurement ◽

Zno Film ◽

Cross Sectional

ABSTRACTTo apply thin ZnO film to photoacoustic tomography sensors, we investigated methods to improve its piezoelectricity with high optical transmittance. ZnO film was deposited by RF magnetron sputtering on a quartz substrate with various changes of the following conditions: RF sputtering power, Ar gas pressure, and substrate temperature (TSUB). The preliminary optimization of sputtering conditions is to form the ZnO film with good c-axis crystalline alignment. The results of X-ray diffraction measurement and cross-sectional observations indicated that the high-TSUB condition was preferable. This was because the desorption of Zn due to high-TSUB during the deposition process induced the formation of excellent columnar grains normal to the substrate. To enhance the piezoresponse, the substitution of Zn with different crystal-radius atoms was investigated, the aim being to increase the electrically neutral dipole moment by the partial displacement of the Zn-O bond. The transition metal V, with the potential to have the various configurations and coordination numbers, was selected as the dopant. As a result, it was confirmed that the diffraction peak from the (002) plane shifted to low angles with small degradation of the diffraction intensities.

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A Novel Phototransistor Device with Dual Active Layers Composited of CsPbBr3 and ZnO Quantum Dots

Materials ◽

10.3390/ma12081215 ◽

2019 ◽

Vol 12 (8) ◽

pp. 1215 ◽

Cited By ~ 4

Author(s):

Xu Zhang ◽

Qing Li ◽

Shikai Yan ◽

Wei Lei ◽

Jing Chen ◽

...

Keyword(s):

Quantum Dots ◽

High Performance ◽

Low Cost ◽

Conducting Layer ◽

Light Illumination ◽

High Electron ◽

Zno Film ◽

Active Layers ◽

Zno Qds ◽

Photodetector Device

Taking advantage of a large light absorption coefficient, long charge carrier diffusion length and low-cost solution processing, all-inorganic halides perovskite CsPbBr3 quantum dots (QDs) are combined with a ZnO QD film to construct a high-performance photodetector. In this work, a novel photodetector device based on transistor structure with dual active layers composed of CsPbBr3 and ZnO film is proposed. In this structure, CsPbBr3 film functions as the light-absorbing layer and ZnO film acts as the conducting layer. Owing to the high electron mobility and hole-blocking nature of the ZnO QDs film, the photo-induced electron-hole pairs can be separated efficiently. As a result, the device exhibits high performance with response of 43.5 A/W, high detection up to 5.02 × 1011 Jones and on/off ratio of 5.6 × 104 under 365 nm light illumination. Compared with the ZnO-only phototransistor (the photodetector with the structure of transistor) the performance of the CsPbBr3 phototransistor showed significant improvement, which is superior to the majority of photodetectors prepared by perovskite. This work demonstrates that the ZnO QDs film can be applied in the photodetector device as a functional conducting layer, and we believe that the hybrid CsPbBr3/ZnO phototransistor would promote the development of low-cost and high-performance photodetectors.

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