Ion Implantation of Ti INTO LiNbO3: Fabrication of Waveguides and Simple Modulators

1989 ◽  
Vol 152 ◽  
Author(s):  
C. W. White ◽  
D. K. Thomas ◽  
P. R. Ashley ◽  
W. S. C. Chang ◽  
C. Buchal
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Surface Region ◽  
Amorphous Region ◽  
Index Of Refraction ◽  
Near Surface ◽  
Channel Waveguides ◽  
High Doses ◽  
Water Saturated ◽  
Saturated Oxygen

ABSTRACTIon implantation has been used to introduce Ti at very high doses (>3 × 1017 /cm2) into the near-surface region of LiNbO3 to change the index of refraction.’ In the as-implanted state, the near surface is amorphous. Thermal annealing in water-saturated oxygen 1000°C crystallizes the amorphous region and incorporates the Ti into substitutional sites in the lattice at concentrations that exceed 10 at.%. Recrystallization takes place by solid-phase epitaxy. Both planar and channel waveguides have been fabricated with optical attenuations of <1 dB/cm. Both Mach-Zehnder and Bragg modulators have been fabricated using Ti implantation of LiNbO3. The characteristics of these devices have been determined and will be reported. The higher Ti concentrations which can be achieved by implantation allows tighter mode confinement and smaller mode profiles than with Ti-diffused guides.

Solid-phase epitaxy of Ti-implanted LiNbO3

1989 ◽  
Vol 4 (2) ◽  
pp. 412-416 ◽  
Author(s):  
D. B. Poker ◽  
D. K. Thomas
Keyword(s):  
Optical Waveguides ◽  
Solid Phase ◽  
Complete Removal ◽  
Amorphous Region ◽  
Liquid Nitrogen Temperature ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Complete Recrystallization ◽  
Water Saturated ◽  
Saturated Oxygen

The solid-phase epitaxy of LiNbO3 following ion implantation of Ti dopant for the purpose of producing optical waveguides has been studied. Implanting 360-keV Ti at liquid nitrogen temperature produces a highly damaged region extending to a depth of about 400 nm. This essentially amorphous region can be recrystallized epitaxially by annealing in a water-saturated oxygen atmosphere at temperatures near 400 °C. though complete removal of all irradiation-induced damage requires temperatures in excess of 600 °C. The activation energy of the regrowth is 2.0 eV for implanted fluences below 3 ⊠ 1016 Ti/cm2. At higher fluences the regrowth proceeds more slowly, and Ti dopant segregates at the regrowth interface. Complete recrystallization following high-dose implantation requires annealing temperatures in excess of 800 °C.

Solid-phase epitaxy of ion-implanted LiNbO3 for optical waveguide fabrication

1987 ◽  
Vol 2 (2) ◽  
pp. 222-230 ◽  
Author(s):  
Ch. Buchal ◽  
P. R. Ashley ◽  
B. R. Appleton
Keyword(s):  
Optical Waveguides ◽  
Solid Phase ◽  
Surface Region ◽  
Liquid Nitrogen Temperature ◽  
High Concentration ◽  
Near Surface ◽  
Crystalline Substrate ◽  
A New Technique ◽  
Waveguide Fabrication ◽  
Water Saturated

A new technique for successfully fabricating high-quality optical waveguides in LiNbO3 is reported. A high concentration of Ti is implanted with the substrate at liquid nitrogen temperature and an amorphous, Ti-rich, nonequilibrium phase is produced in the implanted, near-surface region. Subsequent thermal annealing in water-saturated oxygen atmosphere at up to 1000°C initiates solid-phase epitaxial regrowth onto the crystalline substrate. A highquality single crystalline layer results that is rich in Ti and has excellent waveguiding properties.

scholarly journals Ion Implantation and Annealing of SrTiO3 and CaTiO3

1987 ◽  
Vol 93 ◽  
Author(s):  
C. W. White ◽  
L. A. Boatner ◽  
J. Rankin ◽  
M. J. Aziz
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Surface Region ◽  
Single Crystal Substrate ◽  
Recrystallization Process ◽  
Near Surface ◽  
Ion Channeling ◽  
Implantation Damage ◽  
Crystal Substrate ◽  
Kinetics Of

ABSTRACTIon implantation damage and thermal annealing results are presented for single crystals of SrTiO3 and CaTiO3. The near-surface region of both of these materials can be made amorphous by low doses (∼1015/cm2 ) of heavy ions (Pb at 540 keV). During annealing, the amorphous implanted region crystallizes epitaxially on the underlying single-crystal substrate. The kinetics of this solid-phase epitaxial recrystallization process have been measured by employing ion channeling techniques.

The Effects of Ion Implantation on the Surface Features of Inconel 600

1985 ◽  
Vol 43 ◽  
pp. 288-289
Author(s):  
John D. Rubio
Keyword(s):  
Grain Boundary ◽  
Ion Implantation ◽  
Nuclear Power ◽  
Power Plants ◽  
Surface Region ◽  
Selective Dissolution ◽  
Boundary Region ◽  
Near Surface ◽  
Inconel 600 ◽  
Steam Generator Tubing

The degradation of steam generator tubing at nuclear power plants has become an important problem for the electric utilities generating nuclear power. The material used for the tubing, Inconel 600, has been found to be succeptible to intergranular attack (IGA). IGA is the selective dissolution of material along its grain boundaries. The author believes that the sensitivity of Inconel 600 to IGA can be minimized by homogenizing the near-surface region using ion implantation. The collisions between the implanted ions and the atoms in the grain boundary region would displace the atoms and thus effectively smear the grain boundary.To determine the validity of this hypothesis, an Inconel 600 sample was implanted with 100kV N2+ ions to a dose of 1x1016 ions/cm2 and electrolytically etched in a 5% Nital solution at 5V for 20 seconds. The etched sample was then examined using a JEOL JSM25S scanning electron microscope.

scholarly journals Microstructure and Mechanical Properties of Ti + N Ion Implanted Cronidur30 Steel

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 427 ◽  
Author(s):  
Jie Jin ◽  
Wei Wang ◽  
Xinchun Chen
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Structural Modification ◽  
Surface Region ◽  
Grazing Incidence ◽  
Bearing Steel ◽  
Near Surface ◽  
X Ray ◽  
Ion Implanted

In this study, Ti + N ion implantation was used as a surface modification method for surface hardening and friction-reducing properties of Cronidur30 bearing steel. The structural modification and newly-formed ceramic phases induced by the ion implantation processes were investigated by transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and grazing incidence X-ray diffraction (GIXRD). The mechanical properties of the samples were tested by nanoindentation and friction experiments. The surface nanohardness was also improved significantly, changing from ~10.5 GPa (pristine substrate) to ~14.2 GPa (Ti + N implanted sample). The friction coefficient of Ti + N ion implanted samples was greatly reduced before failure, which is less than one third of pristine samples. Furthermore, the TEM analyses confirmed a trilamellar structure at the near-surface region, in which amorphous/ceramic nanocrystalline phases were embedded into the implanted layers. The combined structural modification and hardening ceramic phases played a crucial role in improving surface properties, and the variations in these two factors determined the differences in the mechanical properties of the samples.

Modification of The Near-Surface Region Of Al2O3 By Ion Implantation

1983 ◽  
Vol 24 ◽  
Author(s):  
C. W. White ◽  
G. C. Farlow ◽  
H. Naramoto ◽  
C. J. Mchargue ◽  
B. R. Appleton
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Structural Property ◽  
Surface Region ◽  
Impurity Incorporation ◽  
Near Surface ◽  
Implantation Damage ◽  
Property Changes

ABSTRACTPhysical and structural property changes resulting from ion implantation and thermal annealing of α-A12O3 are reviewed. Emphasis is placed on damage production during implantation, damage recovery during thermal annealing, and impurity incorporation during thermal annealing. Physical and structural property changes caused by ion implantation and annealing are correlated with changes in the mechanical properties.

Solid-Phase Epitaxy of Ti-Implanted LiNbO3

1987 ◽  
Vol 93 ◽  
Author(s):  
D. B. Poker
Keyword(s):  
Activation Energy ◽  
Optical Waveguides ◽  
Solid Phase ◽  
Complete Removal ◽  
Liquid Nitrogen Temperature ◽  
Index Of Refraction ◽  
Optical Index ◽  
Epitaxial Regrowth ◽  
Residual Damage ◽  
Water Saturated

ABSTRACTThe implantation of Ti into LiNbO3 has been studied as a means of altering the optical index of refraction to produce optical waveguides. Implanting 2 × 1017 atoms/cm2 of 360-keV Ti at liquid nitrogen temperature produces a highly damaged region extending to a depth of about 4000 Å. Solid-phase epitaxial regrowth of the LiNbO3 can be achieved by annealing in a water-saturated oxygen atmosphere at 400°C, though complete removal of the residual damage usually requires temperatures in excess of 800°C. The solid-phase epitaxial regrowth rate exhibits an activation energy of 2 eV at doses below 3 × 1016 Ti/cm2, but both the regrowth rate and activation energy decrease at higher doses. At doses above 1 × 1017 Ti/cm2, the solid-phase epitaxial regrowth occurs only at temperatures above 800°C.

Effects of Silicon Ion Implantation upon Thin Gate Oxide Integrity

1992 ◽  
Vol 262 ◽  
Author(s):  
G. -S. Lee ◽  
J. -G. Park ◽  
S. -P. Choi ◽  
C. -H. Shin ◽  
Y. -B. Sun ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Dielectric Breakdown ◽  
Defect Density ◽  
Surface Region ◽  
Gate Oxide ◽  
Near Surface ◽  
Time Dependent Dielectric Breakdown ◽  
Thin Gate Oxide ◽  
Si Ion Implantation ◽  
Gate Oxide Integrity

ABSTRACTIn this study, using oxide breakdown voltage and time-dependent-dielectric breakdown measurements, thermal wave modulated reflectance and chemical etching/optical microscopy, we investigated effects of Si ion implantation upon formation of D-defects and thin gate oxide integrity. Our data show that addition of Si ion implantation with a dose of up to 1013 ions/cm2 improves oxide integrity if the implantation is done at a certain step just before sacrificial oxidation in the Mb DRAM process. However, no improvement in oxide integrity is observed when the same implantation is done on the virgin wafer surfaces at the start of the same Mb DRAM process. We discuss our hypothesis that the improvement in oxide integrity is due to a reduction in the D-defect density in the near-surface region of the wafer.

scholarly journals Nanophase Composites Produced by Ion Implantation: Properties, Problems, and Potential

2000 ◽  
Vol 650 ◽  
Author(s):  
A. Meldrum ◽  
L. A. Boatner ◽  
C. W. White ◽  
R. F. Haglund
Keyword(s):  
Ion Implantation ◽  
Surface Region ◽  
Nanocomposite Materials ◽  
Future Research ◽  
Materials Synthesis ◽  
Research Directions ◽  
Near Surface ◽  
Nanophase Materials ◽  
Future Research Directions ◽  
The Many

ABSTRACTIon implantation has become a versatile and powerful technique for synthesizing nanometer-scale clusters and crystals embedded in the near-surface region of a variety of hosts. The resulting nanocomposite materials often show unique optical, magnetic, and electronic properties. Here we review some of the principal features of this nanophase materials synthesis technique and discuss the outstanding experimental difficulties that currently hamper the development of devices based on the many unique properties of these nanocomposite materials. Possible solutions to these problems and future research directions are discussed.

scholarly journals Nanophase Composites Produced by Ion Implantation: Properties, Problems, and Potential

2000 ◽  
Vol 647 ◽  
Author(s):  
A. Meldrum ◽  
L. A. Boatner ◽  
C. W. White ◽  
R. F. Haglund
Keyword(s):  
Ion Implantation ◽  
Surface Region ◽  
Nanocomposite Materials ◽  
Future Research ◽  
Materials Synthesis ◽  
Research Directions ◽  
Near Surface ◽  
Nanophase Materials ◽  
Future Research Directions ◽  
The Many

AbstractIon implantation has become a versatile and powerful technique for synthesizing nanometer-scale clusters and crystals embedded in the near-surface region of a variety of hosts. The resulting nanocomposite materials often show unique optical, magnetic, and electronic properties. Here we review some of the principal features of this nanophase materials synthesis technique and discuss the outstanding experimental difficulties that currently hamper the development of devices based on the many unique properties of these nanocomposite materials. Possible solutions to these problems and future research directions are discussed.

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