Modeling and Verification of Interface and Bulk Trap Level Density Extraction in SONOS Memory Charge Trapping Layer

The interface between the gate oxide and silicon carbide (SiC) has a strong influence on the performance and reliability of SiC MOSFETs and thus, requires special attention. In order to reduce charge trapping at the interface, post oxidation anneals (POAs) are conventionally applied. However, these anneals do not only influence the device performance, such as mobility and on-resistance, but also the gate oxide reliability. We study the oxide tunneling mechanisms of NH3 annealed 4H-SiC trench MOSFET test structures and compare them to devices which received a NO POA. We show that 3 different mechanisms, namely trap assisted tunneling (TAT), Fowler-Nordheim (FN) tunneling and charge trapping are found for NH3 annealed MOS structures whereas only FN-tunneling is observed in NO annealed devices.The tunneling barrier suggest a trap level with an effective activation energy of 382 meV to enable TAT.

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Using capacitance methods for interface trap level density extraction in graphene field-effect devices

2012 28th International Conference on Microelectronics Proceedings ◽

10.1109/miel.2012.6222868 ◽

2012 ◽

Cited By ~ 8

Author(s):

Gennady I. Zebrev ◽

Evgeny V. Melnik ◽

Daria K. Batmanova

Keyword(s):

Field Effect ◽

Level Density ◽

Interface Trap ◽

Trap Level ◽

Field Effect Devices

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High improvement in trap level density and direct current breakdown strength of block polypropylene by doping with a β-nucleating agent

Applied Physics Letters ◽

10.1063/1.5020736 ◽

2018 ◽

Vol 112 (9) ◽

pp. 091902 ◽

Cited By ~ 7

Author(s):

Chong Zhang ◽

Jun-Wei Zha ◽

Hong-Da Yan ◽

Wei-Kang Li ◽

Zhi-Min Dang

Keyword(s):

Direct Current ◽

Breakdown Strength ◽

Level Density ◽

Nucleating Agent ◽

Trap Level

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Determination of SiO2–Si interface trap level density (Dit) by vibrating capacitor method

Solid-State Electronics ◽

10.1016/s0038-1101(00)00119-2 ◽

2000 ◽

Vol 44 (10) ◽

pp. 1825-1831 ◽

Cited By ~ 9

Author(s):

János Mizsei

Keyword(s):

Level Density ◽

Interface Trap ◽

Trap Level

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Characterization of the Metal-Semiconductor Interface of Pt-GaN Diode Hydrogen Sensors

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.473 ◽

2013 ◽

Vol 740-742 ◽

pp. 473-476

Author(s):

Yoshihiro Irokawa

Keyword(s):

Level Density ◽

Critical Role ◽

Interaction Mechanism ◽

Detection Sensitivity ◽

Trap Level ◽

Semiconductor Interface ◽

Semiconductor Interfaces ◽

Induced Dipole ◽

Hydrogen Exposure ◽

Frenkel Emission

In this paper, interaction mechanism of hydrogen with GaN metal-insulator-semiconductor (MIS) diodes has been investigated, focusing on the metal/semiconductor interfaces. As a result, the following three points are revealed: First, MIS Pt-SiO2-GaN diodes show a marked improvement in detection sensitivity, suggesting that the device interface plays a critical role in sensing. Second, exposure of the diodes to hydrogen is found to change the conduction mechanisms from Fowler-Nordheim tunneling to Pool-Frenkel emission. Third, interface trap level density of the diodes is found to be reduced by hydrogen exposure even at room temperature. These results support the validity of the hydrogen-induced dipole layer model.

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Rapid Thermal Oxidation of GeSi Strained Layers

MRS Proceedings ◽

10.1557/proc-198-521 ◽

1990 ◽

Vol 198 ◽

Author(s):

D. K. Nayak ◽

K. Kamjoo ◽

J. S. Park ◽

J. C. S. Woo ◽

K. L. Wang

Keyword(s):

Oxidation Rate ◽

Level Density ◽

Interface Trap ◽

Trap Level ◽

Cold Wall ◽

Strained Layers ◽

Oxide Charge ◽

Si Substrates ◽

Capacitance Voltage ◽

Gesi Layer

ABSTRACTA cold-wall rapid thermal processor is used for the oxidation of commensurately grown GexSi1−x layers on Si substrates. It is shown for dry oxidation that the oxidation rate of GeSi is the same as that of Si. The dry oxidationrate of GeSi is independent of Ge concentration (up to 20 % considered in this study) in the GeSi layer. For wet oxidation, however, the rate of oxidation of the GexSi1−x layer is found to be significantly higher than that of pure Si, and the oxidation rate increases with the Ge concentration in GexSi1−x layer. Employing highfrequency and quasistatic Capacitance-Voltage measurements, it is found for a thin oxide that a fixed negative oxide charge density in the range of 1011 – 1012/cm2, and the interface trap level density (in the mid-gap region) of about 1012 /cm2.eV are present. Further, the density of this fixed oxide charge at the SiO2 /GeSi interface is found.to increase with the Ge concentration in the commensurately grown GeSi layers.

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Effect of trap level density on breakdown strength and space charge distribution of polypropylene/low‐density polyethylene composites

Polymer Composites ◽

10.1002/pc.25408 ◽

2019 ◽

Vol 41 (2) ◽

pp. 780-787 ◽

Cited By ~ 6

Author(s):

Hong‐Da Yan ◽

Chong Zhang ◽

Wei‐Kang Li ◽

Jun‐Wei Zha

Keyword(s):

Space Charge ◽

Charge Distribution ◽

Breakdown Strength ◽

Level Density ◽

Low Density Polyethylene ◽

Low Density ◽

Trap Level ◽

Space Charge Distribution ◽

Polyethylene Composites

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The Research of Trap Level Distribution of PI/AlN (Treated)-MMT Films with Different Contents Based on Decay Charge Theory

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.981.855 ◽

2014 ◽

Vol 981 ◽

pp. 855-858

Author(s):

Yuan Yuan Liu ◽

Jing Hua Yin ◽

Yao Lei

Keyword(s):

Distribution Function ◽

Energy Level ◽

Discharge Current ◽

Level Density ◽

Experimental Results ◽

Interface Trap ◽

Trap Level ◽

Surface Trap ◽

Trap Energy ◽

Charge Decay

Through the theoretical deviation based on charge decay theory a trap level distribution function relative to the isothermal discharge current is given in this paper. Based on that, the effect of AlN(treated)-MMT nanoparticles with different contents of 1wt%, 3wt%, 5wt% on surface trap level distribution is researched. The experimental results show that the trap level density is significantly increased compared with traditional IDC and TSC methods. Trap level density and the number of trap charges increase due to the doping AlN (treated)-MMT nanoparticles, and increase with doping contents. The maximum trap energy level density of AlN(treated)-MMT film with 5wt% is 9.14×1024/(eV·m3), which is 3.3 times compared with the PI film corresponding to the trap level in the range of 1.0~1.1eV. The trap level density is affected by the interface trap effect caused by the AlN(treated)-MMT nanoparticles and different contents.

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Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

MRS Proceedings ◽

10.1557/proc-444-161 ◽

1996 ◽

Vol 444 ◽

Cited By ~ 1

Author(s):

Hyeon-Seag Kim ◽

D. L. Polla ◽

S. A. Campbell

Keyword(s):

Thin Films ◽

Loss Factor ◽

High Field ◽

Microelectromechanical Systems ◽

Charge Trapping ◽

Metal Organic ◽

Electrical Reliability ◽

Silicon Based ◽

Degradation Properties ◽

Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

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