MOCVD growth of ZnO films on Si(111) substrate using a thin AlN buffer layer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Download Full-text

Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2012.08.117 ◽

2013 ◽

Vol 554 ◽

pp. 104-109 ◽

Cited By ~ 13

Author(s):

H. Xiong ◽

J.N. Dai ◽

Xiong Hui ◽

Y.Y. Fang ◽

W. Tian ◽

...

Keyword(s):

Pulsed Laser Deposition ◽

Buffer Layer ◽

Layer Thickness ◽

Sapphire Substrate ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Films ◽

Buffer Layer Thickness ◽

Aln Buffer

Download Full-text

Plasma-Assisted MOCVD Growth of Non-Polar GaN and AlGaN on Si(111) Substrates Utilizing GaN-AlN Buffer Layer

Coatings ◽

10.3390/coatings12010094 ◽

2022 ◽

Vol 12 (1) ◽

pp. 94

Author(s):

Pepen Arifin ◽

Heri Sutanto ◽

Sugianto ◽

Agus Subagio

Keyword(s):

Buffer Layer ◽

Lattice Mismatch ◽

Critical Role ◽

Chemical Vapor ◽

Organic Chemical ◽

Force Microscopy ◽

Mocvd Growth ◽

Metal Organic ◽

Aln Buffer ◽

Gan Buffer Layer

We report the growth of non-polar GaN and AlGaN films on Si(111) substrates by plasma-assisted metal-organic chemical vapor deposition (PA-MOCVD). Low-temperature growth of GaN or AlN was used as a buffer layer to overcome the lattice mismatch and thermal expansion coefficient between GaN and Si(111) and GaN’s poor wetting on Si(111). As grown, the buffer layer is amorphous, and it crystalizes during annealing to the growth temperature and then serves as a template for the growth of GaN or AlGaN. We used scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD) characterization to investigate the influence of the buffer layer on crystal structure, orientation, and the morphology of GaN. We found that the GaN buffer layer is superior to the AlN buffer layer. The thickness of the GaN buffer layer played a critical role in the crystal quality and plane orientation and in reducing the cracks during the growth of GaN/Si(111) layers. The optimum GaN buffer layer thickness is around 50 nm, and by using the optimized GaN buffer layer, we investigated the growth of AlGaN with varying Al compositions. The morphology of the AlGaN films is flat and homogenous, with less than 1 nm surface roughness, and has preferred orientation in a-axis.

Download Full-text

Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH3 Growth Interruption

Micromachines ◽

10.3390/mi12040399 ◽

2021 ◽

Vol 12 (4) ◽

pp. 399

Author(s):

Sang-Jo Kim ◽

Semi Oh ◽

Kwang-Jae Lee ◽

Sohyeon Kim ◽

Kyoung-Kook Kim

Keyword(s):

Buffer Layer ◽

Light Emitting Diodes ◽

Defect Density ◽

Strain Relaxation ◽

Multiple Quantum Well ◽

Light Output ◽

Multiple Quantum ◽

Light Emitting ◽

Growth Interruption ◽

Aln Buffer

We demonstrate the highly efficient, GaN-based, multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrates embedded with the AlN buffer layer using NH3 growth interruption. Analysis of the materials by the X-ray diffraction omega scan and transmission electron microscopy revealed a remarkable improvement in the crystalline quality of the GaN layer with the AlN buffer layer using NH3 growth interruption. This improvement originated from the decreased dislocation densities and coalescence-related defects of the GaN layer that arose from the increased Al migration time. The photoluminescence peak positions and Raman spectra indicate that the internal tensile strain of the GaN layer is effectively relaxed without generating cracks. The LEDs embedded with an AlN buffer layer using NH3 growth interruption at 300 mA exhibited 40.9% higher light output power than that of the reference LED embedded with the AlN buffer layer without NH3 growth interruption. These high performances are attributed to an increased radiative recombination rate owing to the low defect density and strain relaxation in the GaN epilayer.

Download Full-text

The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method

Journal of Electronic Materials ◽

10.1007/s11664-015-4210-x ◽

2015 ◽

Vol 45 (2) ◽

pp. 859-866 ◽

Cited By ~ 3

Author(s):

Wei-Ching Huang ◽

Chung-Ming Chu ◽

Chi-Feng Hsieh ◽

Yuen-Yee Wong ◽

Kai-wei Chen ◽

...

Keyword(s):

Low Temperature ◽

Buffer Layer ◽

Material Properties ◽

Double Step ◽

Nucleation Layer ◽

Aln Buffer

Download Full-text

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

physica status solidi (a) ◽

10.1002/pssa.201900694 ◽

2019 ◽

Vol 217 (7) ◽

pp. 1900694

Author(s):

Uiho Choi ◽

Donghyeop Jung ◽

Kyeongjae Lee ◽

Taemyung Kwak ◽

Taehoon Jang ◽

...

Keyword(s):

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Double Heterostructure ◽

Aln Buffer

Download Full-text

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.251 ◽

2008 ◽

Vol 600-603 ◽

pp. 251-254 ◽

Cited By ~ 1

Author(s):

Yong Mei Zhao ◽

Guo Sheng Sun ◽

Xing Fang Liu ◽

Jia Ye Li ◽

Wan Shun Zhao ◽

...

Keyword(s):

Buffer Layer ◽

Chemical Vapor ◽

Heteroepitaxial Growth ◽

Si Substrate ◽

Si Substrates ◽

Good Crystallinity ◽

Aln Film ◽

Pressure Chemical ◽

Aln Buffer ◽

Sic Film

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

Download Full-text