The production of tantalum nitride film resistors using a continuous sputtering machine

AbstractA novel tantalum precursor, bis(ethylcyclopentadienyl)hydridocarbonyltantalum (Ta(EtCp)2(CO)H EtCp:ethylcyclopentadienyl), for chemical vapor deposition (CVD) and atomic layer deposition (ALD) was synthesized. The molecular structure of this precursor was determined by 1H and 13C NMR, IR, ICP-AES and elemental analysis. This precursor is liquid at room temperature, and its vapor pressure and decomposition temperature indicates that this precursor is suitable for CVD and ALD process.The composition analysis of metal tantalum films deposited by thermal CVD revealed that the concentration of carbon was larger than tantalum. On the other hand, an argon plasma CVD technique reduced the carbon concentration drastically.

Download Full-text

Numerical investigation of sputtering power effect on nano-tribological properties of tantalum-nitride film using molecular dynamics simulation

Applied Surface Science ◽

10.1016/j.apsusc.2015.12.075 ◽

2016 ◽

Vol 367 ◽

pp. 197-204 ◽

Cited By ~ 9

Author(s):

S.S. Firouzabadi ◽

K. Dehghani ◽

M. Naderi ◽

F. Mahboubi

Keyword(s):

Molecular Dynamics ◽

Molecular Dynamics Simulation ◽

Numerical Investigation ◽

Tribological Properties ◽

Tantalum Nitride ◽

Dynamics Simulation ◽

Nitride Film ◽

Sputtering Power ◽

Power Effect

Download Full-text

Study on ignition performance of tantalum nitride film energy exchangers based on new bridge area

Modern Physics Letters B ◽

10.1142/s0217984921400200 ◽

2021 ◽

pp. 2140020

Author(s):

Xiao-Ming Ren ◽

Ke-Xin Yu ◽

Wei Ren ◽

Lan Liu ◽

Rui-Zhen Xie ◽

...

Keyword(s):

Experimental Results ◽

Tantalum Nitride ◽

Nitride Film ◽

Ignition Energy ◽

Ignition Voltage ◽

Action Time ◽

Mems Technology ◽

New Type ◽

Film Transducer

In order to reduce the ignition energy of the tantalum nitride film transducer, a new type of energy exchangers bridge area was designed in this paper, and it was fabricated by MEMS technology. The parameters of ignition voltage, ignition energy, as well as action time were tested. The experimental results showed that in terms of ignition voltage, ignition energy, and action time, the value of the energy exchangers element of the new bridge area was lower than the value of the energy exchangers element of the conventional bridge area. In addition, ignition performance can be reduced by many energy exchangers in the new bridge area.

Download Full-text

Substrate composition effects on the interfacial fracture of tantalum nitride films

Journal of Materials Research ◽

10.1557/jmr.1999.0307 ◽

1999 ◽

Vol 14 (6) ◽

pp. 2306-2313 ◽

Cited By ~ 12

Author(s):

N. R. Moody ◽

A. Strojny ◽

D. L. Medlin ◽

A. Talin ◽

W. W. Gerberich

Keyword(s):

Aluminum Nitride ◽

Surface Hardness ◽

Tantalum Nitride ◽

Nitride Film ◽

Interface Composition ◽

Near Surface ◽

Substrate Composition ◽

A Value ◽

Composition And Structure ◽

Film Substrate

In this study we combined nanoscratch testing with a multilayer sapphire and aluminum nitride single-substrate system to determine the effects of interface composition and structure on susceptibility to fracture of hard, thin tantalum nitride films. Nanoindentation tests showed that the elastic moduli of the tantalum nitride and aluminum nitride films, as well as the sapphire substrate, were essentially equal at 400 GPa. On both portions of the substrate, these tests also showed that near surface hardness was near 35 GPa. Nanoscratch tests triggered long blisters and circular spalls on both the sapphire and aluminum nitride portions of the substrate. The blisters showed that the tantalum nitride film was subjected to a compressive residual stress of −6.7 GPa. The spalls showed that failure occurred along the tantalum nitride film-substrate interface regardless of substrate composition. Most importantly, the blisters and spalls showed that the mode I componentof the fracture energies was essentially equal on both substrate materials at a value near 3.1 J/m2. These energies are on the order of the energies for metallic bonding.

Download Full-text