X-, γ, β-ray detector windows of composite material replacing beryllium in the 4.2–420 K temperature range

1986 ◽  
Vol 251 (1) ◽  
pp. 95-100 ◽  
Author(s):  
J.N. Rimbert ◽  
O.A. Testard
Keyword(s):  
Composite Material ◽  
Temperature Range

scholarly journals Effect of Mg-Based of Multi-Layered Structure on Hydrogen Desorption Properties

2019 ◽  
Vol 804 ◽  
pp. 35-40
Author(s):  
Ning Ning Zhou ◽  
Dong Ying Ju
Keyword(s):  
Composite Material ◽  
Hydrogen Storage ◽  
Layered Structure ◽  
Atomic Radius ◽  
Hydrogen Desorption ◽  
Multilayer Composite ◽  
Mixed Powder ◽  
Temperature Range ◽  
Ni Alloy ◽  
Cladding Material

This study proposed the new method of preparing Mg-based composite by mixed powder Ni and Ti onto the surface of pure Mg ingot. The prepared method caused that hydrogen absorbing phase Mg2Ni and catalytic phase NiTi generated and distributed regularly. The pure Mg ingot as the center and the powder Ni and Ti as cladding material on the surface were formed and sintered, in which the temperature range of generated alloy phase Mg2Ni and NiTi was confirmed at first; according to the temperature range, the size of Mg2Ni and NiTi crystal grains at 650°C and 850°C were analyzed and compared, respectively; The size of Mg2Ni alloy phase at the surface and center was calculated by comparing the atomic radius of Ni, Ti to confirm that Mg2Ni distributed on the surface due to the atom Ti replaced the atom Ni in Mg2Ni to generate the alloy phase NiTi; the capacity of the hydrogen desorption reached 4wt% within 5min. The disadvantages that easy to chalking and difficult to activate in the conventional method were avoided and achieved the application of the multilayer composite material in hydrogen storage field.

The Hall Carrier Mobility of AgBiTe2-Ag2Te Composite

2001 ◽  
Vol 691 ◽  
Author(s):  
T. Sakakibara ◽  
Y. Takigawa ◽  
K. Kurosawa
Keyword(s):  
Electrical Conductivity ◽  
Composite Material ◽  
Composite Materials ◽  
Hall Coefficient ◽  
Carrier Mobility ◽  
Matrix Phase ◽  
Second Phase ◽  
Temperature Range ◽  
The Matrix ◽  
Van Der Pauw

ABSTRACTWe prepared a series of (AgBiTe2)1−x(Ag2Te)x(0≤×≤1) composite materials by melt and cool down [1]. The Hall coefficient and the electrical conductivity were measured by the standard van der Pauw technique over the temperature range from 93K to 283K from which the Hall carrier mobility was calculated. Ag2Te had the highest mobility while the mobility of AgBiTe2was the lowest of all samples at 283K. However the mobility of the (AgBiTe2)0.125(Ag2Te)0.875composite material was higher than the motility of Ag2Te below 243K. It seems that a small second phase dispersed in the matrix phase is effective against the increased mobility.

Temperature dependence of TiN/TiAl3/Ti2AlN composite material electric resistivity

2019 ◽  
pp. 36-41
Author(s):  
A. A. Kondakov ◽  
A. V. Karpov ◽  
V. V. Grachev ◽  
A. E. Sytschev
Keyword(s):  
Composite Material ◽  
Electrical Resistance ◽  
Combustion Products ◽  
Specific Electrical Resistance ◽  
Constant Current ◽  
Gaseous Nitrogen ◽  
Full Agreement ◽  
X Ray ◽  
Temperature Range ◽  
Weight Content

The TiN/TiAl3/Ti2AlN composite material was obtained by filtration combustion of the porous TiAl intermetallic samples in gaseous nitrogen. X-ray phase analysis of combustion products provided data to calculate the weight content of each phase as follows: 42 wt.% TiN, 35 wt.% TiAl3, 20 wt.% Ti2AlN and 3 wt.% TiAl. The synthesized composite material containing Ti2AlN МАХ phase features good electrical conductivity of a metallic nature. Specific electrical resistance of the synthesized material was measured by a standard 4-point procedure at constant current in the temperature range 300–1300 K in vacuum 2·10–3 Pa. It was found that specific electrical resistance grows linearly from 0.35 to 1.25 μΩ·m as temperature rises. Subsequent measurements of this indicator at the following heating/cooling cycles demonstrated full agreement of obtained results. This fact indicates that the material has stable electrophysical properties in the investigated temperature range.

scholarly journals Терморезистивный полупроводниковый SiC/Si-композиционный материал

2019 ◽  
Vol 53 (2) ◽  
pp. 231
Author(s):  
С.К. Брантов ◽  
Е.Б. Якимов
Keyword(s):  
Silicon Carbide ◽  
Composite Material ◽  
Thermal Sensitivity ◽  
New Method ◽  
Carbon Foil ◽  
Temperature Range ◽  
Silicon Melt

AbstractA new method for growing a layer of self-bonded silicon-carbide crystallites on the surface of a flexible carbon foil with subsequent impregnation of the formed structures by silicon melt is developed. Thermistors for a temperature range of 900–1450 K with s thermal sensitivity attaining 11 350 K able to be used in air are fabricated based on this composite material. The structural and electrophysical characteristics of the mentioned material are investigated.

Atomic structure of interface of intermetallic compound TiAl and nitride Ti2AIN using HREM and image processing

1991 ◽  
Vol 49 ◽  
pp. 570-571
Author(s):  
E. Sukedai ◽  
H. Mabuchi ◽  
H. Hashimoto ◽  
Y. Nakayama
Keyword(s):  
Mechanical Properties ◽  
Image Processing ◽  
Composite Material ◽  
Intermetallic Compound ◽  
Side Surface ◽  
High Resolution Electron Microscopy ◽  
Hexagonal Structure ◽  
Second Phase ◽  
Resolution Electron ◽  
Compound Tial

In order to improve the mechanical properties of an intermetal1ic compound TiAl, a composite material of TiAl involving a second phase Ti2AIN was prepared by a new combustion reaction method. It is found that Ti2AIN (hexagonal structure) is a rod shape as shown in Fig.1 and its side surface is almost parallel to the basal plane, and this composite material has distinguished strength at elevated temperature and considerable toughness at room temperature comparing with TiAl single phase material. Since the property of the interface of composite materials has strong influences to their mechanical properties, the structure of the interface of intermetallic compound and nitride on the areas corresponding to 2, 3 and 4 as shown in Fig.1 was investigated using high resolution electron microscopy and image processing.

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

Domain coarsening by grain boundary migration in ordered Ni4Mo

1986 ◽  
Vol 44 ◽  
pp. 560-561
Author(s):  
K. Vasudevan ◽  
H. P. Kao ◽  
C. R. Brooks ◽  
E. E. Stansbury
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Short Range ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Rapid Cooling ◽  
Temperature Range ◽  
Fee Structure ◽  
Domain Coarsening ◽  
Boundary Reaction

The Ni4Mo alloy has a short-range ordered fee structure (α) above 868°C, but transforms below this temperature to an ordered bet structure (β) by rearrangement of atoms on the fee lattice. The disordered α, retained by rapid cooling, can be ordered by appropriate aging below 868°C. Initially, very fine β domains in six different but crystallographically related variants form and grow in size on further aging. However, in the temperature range 600-775°C, a coarsening reaction begins at the former α grain boundaries and the alloy also coarsens by this mechanism. The purpose of this paper is to report on TEM observations showing the characteristics of this grain boundary reaction.

The microstructure of a TiB2/Ti-47 Al composite material

1989 ◽  
Vol 47 ◽  
pp. 674-675
Author(s):  
O. Popoola ◽  
A.H. Heuer ◽  
P. Pirouz
Keyword(s):  
Composite Material ◽  
Ion Beam ◽  
Chemical Properties ◽  
Intermetallic Alloys ◽  
Transmission Electron ◽  
Diamond Polishing ◽  
Al Composite ◽  
The Matrix ◽  
Argon Ion ◽  
And Chemical Properties

The addition of fibres or particles (TiB2, SiC etc.) into TiAl intermetallic alloys could increase their toughness without compromising their good high temperature mechanical and chemical properties. This paper briefly discribes the microstructure developed by a TiAl/TiB2 composite material fabricated with the XD™ process and forged at 960°C.The specimens for transmission electron microscopy (TEM) were prepared in the usual way (i.e. diamond polishing and argon ion beam thinning) and examined on a JEOL 4000EX for microstucture and on a Philips 400T equipped with a SiLi detector for microanalyses.The matrix was predominantly γ (TiAl with L10 structure) and α2(TisAl with DO 19 structure) phases with various morphologies shown in figure 1.

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

A Transmission Electron Microscopical Investigation of Phase Transformations in TiNi

1980 ◽  
Vol 38 ◽  
pp. 340-341
Author(s):  
P. Moine ◽  
G. M. Michal ◽  
R. Sinclair
Keyword(s):  
Electron Microscopy ◽  
Phase Transformations ◽  
Applied Stress ◽  
Structural Changes ◽  
Microscopical Investigation ◽  
Temperature Range ◽  
Transmission Electron ◽  
Electron Microscopical ◽  
Diffraction Effects ◽  
Microscopy Images

Premartensitic effects in near equiatomic TiNi have been pointed out by several authors(1-5). These include anomalous contrast in electron microscopy images (mottling, striations, etc. ),diffraction effects(diffuse streaks, extra reflections, etc.), a resistivity peak above Ms (temperature at which a perceptible amount of martensite is formed without applied stress). However the structural changes occuring in this temperature range are not well understood. The purpose of this study is to clarify these phenomena.

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