Precursor gas composition optimisation for large area boron doped nano-crystalline diamond growth by MW-LA-PECVD

Carbon ◽  
2018 ◽  
Vol 128 ◽  
pp. 164-171 ◽  
Author(s):  
A. Taylor ◽  
P. Ashcheulov ◽  
P. Hubík ◽  
L. Klimša ◽  
J. Kopeček ◽  
...  
Keyword(s):  
Diamond Growth ◽  
Gas Composition ◽  
Large Area ◽  
Boron Doped ◽  
Nano Crystalline

scholarly journals Deposition of Boron-Doped Thin CVD Diamond Films from Methane-Triethyl Borate-Hydrogen Gas Mixture

Processes ◽  
2020 ◽  
Vol 8 (6) ◽  
pp. 666 ◽  
Author(s):  
Nikolay Ivanovich Polushin ◽  
Alexander Ivanovich Laptev ◽  
Boris Vladimirovich Spitsyn ◽  
Alexander Evgenievich Alexenko ◽  
Alexander Mihailovich Polyansky ◽  
...  
Keyword(s):  
Film Growth ◽  
Chemical Vapor ◽  
Hydrogen Gas ◽  
Diamond Growth ◽  
Structural Defects ◽  
Boron Doped Diamond ◽  
Diamond Deposition ◽  
Synthesis Conditions ◽  
Surface Etching ◽  
Boron Doped

Boron-doped diamond is a promising semiconductor material that can be used as a sensor and in power electronics. Currently, researchers have obtained thin boron-doped diamond layers due to low film growth rates (2–10 μm/h), with polycrystalline diamond growth on the front and edge planes of thicker crystals, inhomogeneous properties in the growing crystal’s volume, and the presence of different structural defects. One way to reduce structural imperfection is the specification of optimal synthesis conditions, as well as surface etching, to remove diamond polycrystals. Etching can be carried out using various gas compositions, but this operation is conducted with the interruption of the diamond deposition process; therefore, inhomogeneity in the diamond structure appears. The solution to this problem is etching in the process of diamond deposition. To realize this in the present work, we used triethyl borate as a boron-containing substance in the process of boron-doped diamond chemical vapor deposition. Due to the oxygen atoms in the triethyl borate molecule, it became possible to carry out an experiment on simultaneous boron-doped diamond deposition and growing surface etching without the requirement of process interruption for other operations. As a result of the experiments, we obtain highly boron-doped monocrystalline diamond layers with a thickness of about 8 μm and a boron content of 2.9%. Defects in the form of diamond polycrystals were not detected on the surface and around the periphery of the plate.

Boron-Doped Nanocrystalline Diamond Films Deposited By Using DC Arc Plasma Jet CVD

2010 ◽  
Vol 426-427 ◽  
pp. 30-34
Author(s):  
Bing Kun Xiang ◽  
Dun Wen Zuo ◽  
Xiang Feng Li ◽  
Feng Xu ◽  
M. Wang
Keyword(s):  
Diamond Film ◽  
Boron Concentration ◽  
Low Frequency ◽  
Nanocrystalline Diamond ◽  
Boron Doped ◽  
Nano Crystalline ◽  
Diamond Peak ◽  
Dc Arc ◽  
Afm Observation ◽  
Peak Value

Boron-doped micro-nanocrystalline diamond coating may be successfully prepared on Mo substrate with DC arc plasmas jet deposition device. Along with the increase of doped-boron concentration in the film, two-point resistance measurement indicates that film resistance presents exponential decrease; Raman spectrum test shows that, the characteristic peak value of diamond 1332cm-1 in the spectrum moves toward low frequency, the semi-height width of diamond peak, peak D and peak G, etc. in the spectrum is expanded, and the component of non-diamond bonds such as sp2, etc. in the film is increased; SEM and AFM observation shows that, increasing the doped-boron concentration could further subdivide the crystal grains in the film, and is beneficial for the growth of nano- or ultra-nano-crystalline diamond film; film annealing test shows that, micro-nanocrystalline diamond film with higher doped-boron concentration has better thermal stability than the micro-nanocrystalline diamond film without doped boron.

First noble gas results from fluid inclusions of the Late Miocene-Pleistocene Macedonian volcanics

2021 ◽  
Author(s):  
Kata Molnár ◽  
Marjan Temovski ◽  
László Palcsu
Keyword(s):  
Fluid Inclusions ◽  
Late Miocene ◽  
Lithospheric Mantle ◽  
Noble Gas ◽  
Mantle Xenoliths ◽  
Gas Composition ◽  
The European Union ◽  
Large Area ◽  
Development Fund ◽  
Wide Range

<p>Late Miocene to Pleistocene volcanism within the Vardar zone (N. Macedonia) covers a large area, has a wide range in composition and it is largely connected to the tectonic evolution of the South Balkan extensional system, the northern part of the Aegean extensional regime. A recent study indicated an increasing rate of mantle metasomatism towards the younger centers in the region [1]. During the last stage of activity, ultrapotassic (UK) centers that formed between ca. 3.2 and 1.5 Ma originated from the lithospheric mantle beneath the region [2]. Although there are no reported mantle xenoliths from these centers, the erupted mafic rocks contain abundant olivine as phenocrysts [3]. Noble gas isotopic characteristics of fluid inclusions in olivine can reveal important information about the origin of the fluid and the metasomatic state of the lithospheric mantle. We analyzed for the first time the noble gas composition of fluid inclusions of olivine phenocrysts from the Mlado Nagoričane volcanic center, the northernmost member of the UK centers with an eruption age of 1.8 ± 0.1 Ma [2]. The R/R<sub>A</sub> ratios give a range of 3.1-4.5 with <sup>4</sup>He/<sup>20</sup>Ne values of 11.7-14.6. These R/R<sub>A</sub> values are lower than the MORB and the averaged subcontinental lithospheric values, and considering the negligible amount of atmospheric contribution, imply a more metasomatized character for the underlying lithospheric mantle beneath the region. Mantle-derived noble gases were detected in a recent geochemical study on the thermal springs and gas exhalations in the region, with up to 20% of mantle contribution calculated based on their noble gas composition using the MORB R/R<sub>A</sub> value [4]. These new Mlado Nagoričane fluid inclusion noble gas values indicate that the mantle contribution in the recent gas emissions in the region could be higher than what was thought.</p><p>This research was supported by the European Union and the State of Hungary, financed by the European Regional and Development Fund in the project of GINOP-2.3.2-15-2016-00009 ‘ICER’ project</p><p>[1] Molnár et al. 2020 – EGU2020-13101.</p><p>[2] Yanev et al., 2008 – Mineralogy and Petrology, 94(1-2), 45-60.</p><p>[3] Yanev et al., 2008 – Geochemistry, Mineralogy and Petrology, Sofia, 46, 35-67.</p><p>[4] Temovski et al. 2020 – EGU2020-2763.</p>

scholarly journals Growth and Isolation of Large Area Boron-Doped Nanocrystalline Diamond Sheets: A Route toward Diamond-on-Graphene Heterojunction

2018 ◽  
Vol 29 (3) ◽  
pp. 1805242 ◽  
Author(s):  
R. Bogdanowicz ◽  
M. Ficek ◽  
M. Sobaszek ◽  
A. Nosek ◽  
Ł. Gołuński ◽  
...  
Keyword(s):  
Nanocrystalline Diamond ◽  
Large Area ◽  
Boron Doped

Routes towards large area, low pressure nanodiamond growth via pulsed microwave linear antenna plasma chemistry

2011 ◽  
Vol 1282 ◽  
Author(s):  
Michael Liehr ◽  
František Fendrych ◽  
Andrew Taylor ◽  
Miloš Nesládek
Keyword(s):  
Substrate Temperature ◽  
Continuous Wave ◽  
Plasma Chemistry ◽  
Diamond Growth ◽  
Linear Antenna ◽  
Large Area ◽  
Processing Technologies ◽  
High Repetition ◽  
Wafer Processing ◽  
Up Scaling

ABSTRACTCurrent experimental configurations for MW PECVD diamond growth do not allow simple up-scaling towards large areas, which is essential for microelectronic industries and other applications. Another important issue is the reduction of the substrate temperature during diamond growth to enhance the compatibility with wafer processing technologies. Such advantages are provided by MW-linear antenna (LA) plasma applicators, allowing a scalable concept for diamond growing plasmas. In the present work we introduce a novel construction of LA MW applicators designed for nanodiamond growth by using plasmas ranging from continuous wave (CW) to high repetition rates pulsed modes (up to 20 kHz) which advantages are discussed in detail.

Development and growth time optimization of boron-doped micro-crystalline, undoped micro-crystalline and undoped nano-crystalline composite diamond film

2016 ◽  
Vol 232 (7) ◽  
pp. 1244-1258 ◽  
Author(s):  
Xinchang Wang ◽  
Chengchuan Wang ◽  
Fanghong Sun
Keyword(s):  
Surface Roughness ◽  
Diamond Film ◽  
Surface Hardness ◽  
Middle Layer ◽  
Growth Time ◽  
Initial Surface ◽  
Diamond Layer ◽  
Boron Doped ◽  
Nano Crystalline ◽  
Composite Diamond

Based on a well-designed growth procedure, a tri-material, namely, a three-layer boron-doped micro-crystalline, undoped micro-crystalline and undoped nano-crystalline composite diamond film, is deposited on the pretreated WC–6 wt% Co substrate, the basic characters of which are systematically studied and compared with some other commonly used diamond films. Besides, the growth times for three respective layers are accordingly determined. It is further clarified that the underlying boron-doped micro-crystalline diamond layer can well adhere to the WC–Co substrate due to either the reduction in the residual stress or the formation of B–Co compounds. There is no doubt that the surface undoped nano-crystalline diamond layer with relatively lower hardness and initial surface roughness is more convenient to be polished to the required surface roughness. Moreover, when the growth times for the middle undoped micro-crystalline diamond layer and the surface undoped nano-crystalline diamond layer are both appropriate, the undoped micro-crystalline diamond layer with extremely high diamond quality and hardness can effectively reinforce the surface hardness of the whole composite film. Based on the discussions on the influences of the growth times for the different layers on the performance of the composite diamond film, the growth times for the boron-doped micro-crystalline diamond, undoped micro-crystalline diamond and undoped nano-crystalline diamond layers are, respectively, determined as 4, 4 and 2 h. Under such conditions, the reinforcement effect of the middle layer on the surface hardness can be guaranteed, and the undoped nano-crystalline diamond grains have totally covered the undoped micro-crystalline diamond layer.

Plasma Parameter Analysis During Nano-Crystalline Diamond Growth Using Automated Langmuir Probe

2015 ◽  
Vol 12 (5) ◽  
pp. 894-900
Author(s):  
B. Paosawatyanyong ◽  
S. Thitianan ◽  
B. Bhanthumnavin ◽  
N. Promros ◽  
C. S. Wong
Keyword(s):  
Langmuir Probe ◽  
Plasma Parameter ◽  
Parameter Analysis ◽  
Diamond Growth ◽  
Nano Crystalline

scholarly journals Comparative electrode kinetics of micro and nano-crystalline boron doped diamond.

2012 ◽  
Vol 1395 ◽  
Author(s):  
E. Saito ◽  
A.F. Azevedo ◽  
F.A. Souza ◽  
N.G. Ferreira ◽  
M.R. Baldan
Keyword(s):  
High Efficiency ◽  
Electrochemical Impedance ◽  
Differential Capacitance ◽  
Nanocrystalline Diamond ◽  
Boron Doped Diamond ◽  
Transfer Constant ◽  
Raman Scattering Spectroscopy ◽  
Boron Doped ◽  
Nano Crystalline ◽  
Boron Source

ABSTRACTComparative study of boron doped micro/nanocrystalline diamond (BDD/BDND) electrodes was performed using electrochemical impedance spectroscopy measurements (EIS). The morphological and structural characterizations of BDD/BDND films were analyzed by scanning electron microscopy and Raman scattering spectroscopy. The films were grown with different boron amounts added in the feed gas. The boron source for BDND was smaller in concentration than that for BDD sample. Nonetheless, differential capacitance (Mott-Schottky plots) and heterogeneous charge transfer constant results showed similar doping level for both electrodes. This behavior indicated the high efficiency to dope nanocrystalline diamond films.

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