Two-dimensional phase-engineered 1T′– and 2H–MoTe2-based near-infrared photodetectors with ultra-fast response

2019 ◽  
Vol 789 ◽  
pp. 960-965 ◽  
Author(s):  
DongHwan Kim ◽  
Rochelle Lee ◽  
Sung Kim ◽  
TaeWan Kim
Author(s):  
Yun Zhao ◽  
Xiaoqiang Feng ◽  
Menghan Zhao ◽  
Xiaohu Zheng ◽  
Zhiduo Liu ◽  
...  

Employing C3N QD-integrated single-crystal graphene, photodetectors exhibited a distinct photocurrent response at 1550 nm. The photocurrent map revealed that the fast response derive from C3N QDs that enhanced the local electric field near graphene.


Proceedings ◽  
2019 ◽  
Vol 27 (1) ◽  
pp. 33
Author(s):  
Antoni Rogalski

The paper compares two-dimensional (2D) material detectors performance with traditionally and commercially available ones operating in high temperature conditions. The most effective single graphene detectors are THz detectors which utilize plasma rectification phenomena in FETs. Most of 2D layered semiconducting material photodetectors operate at the visible and near-infrared regions and generally their high sensitivity does not coincide with a fast response time, which limits real detector functions.


Nano Research ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 2091-2097 ◽  
Author(s):  
Weiting Xu ◽  
Jiayang Jiang ◽  
Huifang Ma ◽  
Zhengwei Zhang ◽  
Jia Li ◽  
...  

Micromachines ◽  
2020 ◽  
Vol 11 (8) ◽  
pp. 750
Author(s):  
Emma P. Mukhokosi ◽  
Gollakota V.S. Manohar ◽  
Tadaaki Nagao ◽  
Saluru B. Krupanidhi ◽  
Karuna K. Nanda

While band gap and absorption coefficients are intrinsic properties of a material and determine its spectral range, response time is mainly controlled by the architecture of the device and electron/hole mobility. Further, 2D-layered materials such as transition metal dichalogenides (TMDCs) possess inherent and intriguing properties such as a layer-dependent band gap and are envisaged as alternative materials to replace conventional silicon (Si) and indium gallium arsenide (InGaAs) infrared photodetectors. The most researched 2D material is graphene with a response time between 50 and 100 ps and a responsivity of <10 mA/W across all wavelengths. Conventional Si photodiodes have a response time of about 50 ps with maximum responsivity of about 500 mA/W at 880 nm. Although the responsivity of TMDCs can reach beyond 104 A/W, response times fall short by 3–6 orders of magnitude compared to graphene, commercial Si, and InGaAs photodiodes. Slow response times limit their application in devices requiring high frequency. Here, we highlight some of the recent developments made with visible and near-infrared photodetectors based on two dimensional SnSe2 and MoS2 materials and their performance with the main emphasis on the role played by the mobility of the constituency semiconductors to response/recovery times associated with the hetero-structures.


2021 ◽  
Vol 11 (3) ◽  
pp. 1234
Author(s):  
Neusmar J. A. Cordeiro ◽  
Cristina Gaspar ◽  
Maria J. de Oliveira ◽  
Daniela Nunes ◽  
Pedro Barquinha ◽  
...  

Recent advances in the production and development of two-dimensional transition metal dichalcogenides (2D TMDs) allow applications of these materials, with a structure similar to that of graphene, in a series of devices as promising technologies for optoelectronic applications. In this work, molybdenum disulfide (MoS2) nanostructures were grown directly on paper substrates through a microwave-assisted hydrothermal synthesis. The synthesized samples were subjected to morphological, structural, and optical analysis, using techniques such as scanning electron microscopy (SEM), X-ray diffraction (XRD), and Raman. The variation of synthesis parameters, as temperature and synthesis time, allowed the manipulation of these nanostructures during the growth process, with alteration of the metallic (1T) and semiconductor (2H) phases. By using this synthesis method, two-dimensional MoS2 nanostructures were directly grown on paper substrates. The MoS2 nanostructures were used as the active layer, to produce low-cost near-infrared photodetectors. The set of results indicates that the interdigital MoS2 photodetector with the best characteristics (responsivity of 290 mA/W, detectivity of 1.8 × 109 Jones and external quantum efficiency of 37%) was obtained using photoactive MoS2 nanosheets synthesized at 200 °C for 120 min.


2018 ◽  
Vol 6 (18) ◽  
pp. 4861-4865 ◽  
Author(s):  
Yuange Wang ◽  
Xiaowen Huang ◽  
Di Wu ◽  
Ranran Zhuo ◽  
Enping Wu ◽  
...  

High-performance room-temperature infrared photodetectors based on MoS2/CdTe p–n heterojunction with broadband response, high responsivity, specific detectivity as well as fast response speed were demonstrated.


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