Efficient encapsulation of low dimensional particles in thin films to obtain functional coatings

2016 ◽  
Vol 104 ◽  
pp. 87-94 ◽  
Author(s):  
E. Enríquez ◽  
M.A. de la Rubia ◽  
F. González ◽  
A. Alburquerque ◽  
J.F. Fernández
Keyword(s):  
Thin Films ◽  
Functional Coatings ◽  
Low Dimensional

Growth, Structural and Mechanical Characterization and Reliability of Chemical Vapor Deposited Co and Co3O4 Thin Films as Candidate Materials for Sensing Applications

2011 ◽  
Vol 495 ◽  
pp. 108-111 ◽  
Author(s):  
Vasiliki P. Tsikourkitoudi ◽  
Elias P. Koumoulos ◽  
Nikolaos Papadopoulos ◽  
Costas A. Charitidis
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Elastic Modulus ◽  
Data Storage ◽  
Mechanical Stability ◽  
Chemical Vapor ◽  
Magnetic Sensors ◽  
Functional Coatings ◽  
Sensing Applications ◽  
Chemical Vapor Deposited

The adhesion and mechanical stability of thin film coatings on substrates is increasingly becoming a key issue in device reliability as magnetic and storage technology driven products demand smaller, thinner and more complex functional coatings. In the present study, chemical vapor deposited Co and Co3O4thin films on SiO2and Si substrates are produced, respectively. Chemical vapor deposition is the most widely used deposition technique which produces thin films well adherent to the substrate. Co and Co3O4thin films can be used in innovative applications such as magnetic sensors, data storage devices and protective layers. The produced thin films are characterized using nanoindentation technique and their nanomechanical properties (hardness and elastic modulus) are obtained. Finally, an evaluation of the reliability of each thin film (wear analysis) is performed using the hardness to elastic modulus ratio in correlation to the ratio of irreversible work to total work for a complete loading-unloading procedure.

scholarly journals Donald William Pashley. 21 April 1927 — 16 May 2009

2010 ◽  
Vol 56 ◽  
pp. 317-340 ◽  
Author(s):  
Bruce A. Joyce ◽  
Michael J. Stowell
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Film Growth ◽  
Epitaxial Thin Films ◽  
Disorder Effects ◽  
Transmission Electron ◽  
Innovative Materials ◽  
Low Dimensional

Donald William (Don) Pashley was one of the most innovative materials scientists of his generation. He was distinguished for his electron diffraction and transmission electron microscope studies of epitaxial thin films, especially for in situ investigations, work that contributed enormously to our understanding of film growth processes. He pioneered the use of moiré patterns to reveal dislocations and other defects. He also made important contributions to long-range disorder effects on semiconductor surfaces and to the structure of low-dimensional semiconductor systems.

scholarly journals Modifying morphology and defects of low-dimensional, semi-transparent perovskite thin films via solvent type

RSC Advances ◽  
2019 ◽  
Vol 9 (21) ◽  
pp. 12047-12054 ◽  
Author(s):  
Jitprabhat Ponchai ◽  
Paphada Kaewurai ◽  
Chirapa Boonthum ◽  
Kusuma Pinsuwan ◽  
Thidarat Supasai ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Surface Morphology ◽  
Crystallite Size ◽  
Solvent Type ◽  
Superior Surface ◽  
Low Dimensional

Low dimensional perovskites via DMF : DMSO = 8 : 2 with potential for semi-transparent solar cell led to superior surface morphology with large crystallite size and low defects.

INTERFACE AND STEP LOCALIZED PHONON MODES BETWEEN TWO TRUNCATED THIN FILMS

2004 ◽  
Vol 11 (02) ◽  
pp. 155-165
Author(s):  
M. TAMINE ◽  
H. BOUMRAR ◽  
O. RAFIL
Keyword(s):  
Thin Films ◽  
Strain Field ◽  
Phonon Dispersion ◽  
Harmonic Approximation ◽  
Elastic Force ◽  
Force Constants ◽  
Step Edge ◽  
Dimensional Structure ◽  
Phonon Modes ◽  
Low Dimensional

We have carried out the calculations of vibrational dynamics in the low-dimensional structure with dimensions on the nanometer scale by using the matching formalism. The nanostructure model consists in the surface step produced at a perpendicular interface between two truncated thin films with different thickness. The theoretical approach determines the vibrational field in the direction where the translation symmetry is broken. The calculation concerns in particular the phonon dispersion curves localized on the interface and step edge, and employs the matching procedure in the harmonic approximation. The nearest and next nearest neighbors elastic force constants between the mass sites in the model, as well as a modification of the elastic strain field induced by the presence of the step, are considered. Analytic expressions are obtained for the phonon dispersion relations of the localized surface and edge elastic waves and the bulk phonons near a step. The breakdown of translational symmetry perpendicular to the step edge gives rise to several Raleigh-like branches localized in the neighborhood of step and interface. The effects of varying the elastic force constants at an interface and the strain field parameter near the step are studied. These factors influence the number of localized modes as well as their frequency, intensity and attenuation.

Unusual properties of nanoscale ferroelectrics

2017 ◽  
Author(s):  
Huaxiang Fu
Keyword(s):  
Thin Films ◽  
Ferroelectric Phase ◽  
Structural Phase ◽  
Ferroelectric Thin Films ◽  
One Dimensional ◽  
Theoretical Approaches ◽  
Polarization Saturation ◽  
Low Dimensional ◽  
Ferroelectric Phase Transitions ◽  
Polarization Phase

This article describes the unusual properties of nanoscale ferroelectrics (FE), including widely tunable polarization and improved properties in strained ferroelectric thin films; polarization enhancement in superlattices; polarization saturation in ferroelectric thin films under very large inplane strains; occurrence of ferroelectric phase transitions in one-dimensional wires; existence of the toroidal structural phase in ferroelectric nanoparticles; and the symmetry-broken phase-transition path when one transforms a vortex phase into a polarization phase. The article first considers some of the critical questions on low-dimensional ferroelectricity before discussing the theoretical approaches used to determine the properties of ferroelectric nanostructures. It also looks at 2D ferroelectric structures such as surfaces, superlattices and thin films, along with 1D ferroelectric nanowires and ferroelectric nanoparticles.

Characterization of Grain Boundary Geometry in the TEM, Exemplified in Si Thin Films

2012 ◽  
Vol 186 ◽  
pp. 7-12 ◽  
Author(s):  
János L. Lábár ◽  
Ákos K. Kiss ◽  
Silke Christiansen ◽  
Fritz Falk
Keyword(s):  
Thin Films ◽  
Degrees Of Freedom ◽  
Sample Surface ◽  
High Energy ◽  
High Energy Density ◽  
Glass Substrates ◽  
Low Dimensional ◽  
Si Films ◽  
Alternative Routes

A method is presented here for complete geometrical characterization of grain boundaries, based on measurement of thin films in the TEM. First, the three parameters, characterizing the misorientation of the two neighboring grains are determined from convergent beam electron diffraction (CBED). Next, the last two (of the total five macroscopic degrees of freedom) parameters are determined from bright field (BF) images to describe the orientation of the boundary plane between them. Ambiguity in the tilt direction of the plane is resolved from BF images recorded at two distinct goniometer settings. Application of the method is demonstrated in Silicon thin films. GB-plane distribution in a thin film is not necessarily identical to the distribution of similar planes in bulk materials. It was observed in low dimensional fcc metals (wires or thin films) that energy minimization of GBs can follow two (mainly alternative) routes. Either low energy planes (like {111}) are formed in 3 boundaries, or alternatively, it is observed that the GB plane has a general index (and high energy density) but it ends at both free surfaces of the sample, resulting in a GB, almost normal to the sample surface, minimizing the total area of the GB. We observed that this later type of planes is mainly characteristic of non-3 boundaries in thin Si films, crystallized from melt on glass substrates (separated by a thin SiN barrier layer). This observation is important for the expected recombination properties of the multicrystalline Si (m-Si) in planned solar cell (SC) applications.

Sign in / Sign up

Export Citation Format

Share Document