Formation mechanisms of Ti2AlC MAX phase on SiC-4H using magnetron sputtering and post-annealing

2018 ◽  
Vol 144 ◽  
pp. 209-213 ◽  
Author(s):  
J. Nicolaï ◽  
C. Furgeaud ◽  
B.W. Fonrose ◽  
C. Bail ◽  
M.F. Beaufort
Keyword(s):  
Magnetron Sputtering ◽  
Max Phase ◽  
Formation Mechanisms ◽  
Post Annealing

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

scholarly journals Fabrication and Mechanical Properties of Cr2AlC MAX Phase Coatings on TiBw/Ti6Al4V Composite Prepared by HiPIMS

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 826
Author(s):  
Muhammad Waqas Qureshi ◽  
Xinxin Ma ◽  
Guangze Tang ◽  
Bin Miao ◽  
Junbo Niu
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Pulse Width ◽  
Average Power ◽  
Max Phase ◽  
Ex Situ ◽  
Gas Temperature ◽  
Degree Of Ionization ◽  
Force Microscopy ◽  
High Degree

The high-power impulse magnetron sputtering (HiPIMS) technique is widely used owing to the high degree of ionization and the ability to synthesize high-quality coatings with a dense structure and smooth morphology. However, limited efforts have been made in the deposition of MAX phase coatings through HiPIMS compared with direct current magnetron sputtering (DCMS), and tailoring of the coatings’ properties by process parameters such as pulse width and frequency is lacking. In this study, the Cr2AlC MAX phase coatings are deposited through HiPIMS on network structured TiBw/Ti6Al4V composite. A comparative study was made to investigate the effect of average power by varying frequency (1.2–1.6 kHz) and pulse width (20–60 μs) on the deposition rate, microstructure, crystal orientation, and current waveforms of Cr2AlC MAX phase coatings. X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to characterize the deposited coatings. The influence of pulse width was more profound than the frequency in increasing the average power of HiPIMS. The XRD results showed that ex situ annealing converted amorphous Cr-Al-C coatings into polycrystalline Cr2AlC MAX phase. It was noticed that the deposition rate, gas temperature, and roughness of Cr2AlC coatings depend on the average power, and the deposition rate increased from 16.5 to 56.3 nm/min. Moreover, the Cr2AlC MAX phase coatings produced by HiPIMS exhibits the improved hardness and modulus of 19.7 GPa and 286 GPa, with excellent fracture toughness and wear resistance because of dense and column-free morphology as the main characteristic.

PREPARATION OF SUPERCONDUCTING Bi–Pb–Sr–Ca–Cu–O FILMS BY DC MAGNETRON SPUTTERING METHOD

1990 ◽  
Vol 04 (13) ◽  
pp. 847-853
Author(s):  
Y.H. WANG ◽  
Y.Z. ZHANG ◽  
Y.Y. ZHAO ◽  
X.G. QIU ◽  
P. XU ◽  
...  
Keyword(s):  
Thin Films ◽  
Critical Current Density ◽  
Magnetron Sputtering ◽  
Current Density ◽  
High Current Density ◽  
High Current ◽  
Dc Magnetron Sputtering ◽  
Sharp Transition ◽  
Interesting Phenomenon ◽  
Post Annealing

Superconducting Bi–Pb–Sr–Ca–Cu–O thin films of zero resistivity temperature 108 K and critical current density of 1000 A/cm2 (at 77 K) were deposited on MgO(100) single-crystal substrates by DC magnetron sputtering. After depositing at 350–400°C and post annealing at 837.5°C for 1–5 hours in air, with different cooling rate we got highly c-axis oriented thin films which show zero resistivity at 103 K, 108 K. The results we got show an interesting phenomenon: the mixture of high and low Tc phase exhibit a low onset, sharp transition and high current density.

The effect of post-annealing under CdCl2 atmosphere on the properties of ITO thin films deposited by DC magnetron sputtering

2009 ◽  
Vol 21 (5) ◽  
pp. 441-444 ◽  
Author(s):  
Shenghao Wang ◽  
Jingquan Zhang ◽  
Bo Wang ◽  
Lianghuan Feng ◽  
Yaping Cai ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Post Annealing ◽  
Ito Thin Films

Fabrication and Study of P-Type ZnO Films by RF Magnetron Sputtering of ZnO: In2O3 Powder Together with the N-Implantation

2012 ◽  
Vol 503-504 ◽  
pp. 350-353
Author(s):  
Mao Nan ◽  
Chun Yang Kong ◽  
Guo Ping Qin ◽  
Hai Bo Ruan
Keyword(s):  
Magnetron Sputtering ◽  
Hole Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Electrical Characteristics ◽  
Radio Frequency Magnetron Sputtering ◽  
Glass Substrates ◽  
Powder Target ◽  
Post Annealing ◽  
P Type

The N-In codoped p-type ZnO films with preferential orientation along (002) plane have been fabricated on quartz glass substrates using radio frequency magnetron sputtering technique of ZnO:In2O3 powder target combining with N-implantation. The samples annealed at 700°C deserved the optimal properties, the best of which exhibits electrical characteristics with the hole concentration of 4.04×1018 cm-3, the lowest resistivity of 1.15 Ωcm and Hall mobility of about 1.35 cm2V-1s-1. The effects of post-annealing on the microstructure and electronic properties of the codoped ZnO films is analyzed via SEM, XRD, XPS and Hall measurements system, and the trend of carrier concentration with annealing time is discussed theoretically.

Effect of Annealing Temperature on Platinum/YSZ Thin Film Fabricated Using RF and DC Magnetron Sputtering

2017 ◽  
Vol 268 ◽  
pp. 229-233
Author(s):  
A.R. Nurhamizah ◽  
Zuhairi Ibrahim ◽  
Rosnita Muhammad ◽  
Yussof Wahab ◽  
Samsudi Sakrani
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Post Annealing ◽  
Two Temperatures ◽  
Platinum Thin Film

This research aims to study the growth and the effect of annealing temperature on the structural properties of Platinum/YSZ/Platinum thin film. The thin films were prepared by RF and DC magnetron sputtering method utilized platinum as electrodes (anode and cathode) and YSZ as electrolyte. Two temperatures of annealing (400 and 600 °C) were conducted onto Platinum/YSZ/Platinum thin film for comparison in this study. Crystalline phase, microstructure and thickness of thin films were evaluated using X-Ray Diffraction (XRD) and Field Emission Scanning Electron Microscope (FE-SEM) technique. Results show that Pt/YSZ/Pt thin film without post-annealing gives a better morphology and crystal phase.

SPUTTERING DEPOSITION OF Tl–Ca–Ba–Cu–O THIN FILMS WITH ZERO RESISTANCE AT 101 K

1989 ◽  
Vol 03 (13) ◽  
pp. 1013-1016 ◽  
Author(s):  
S. L. YAN ◽  
X. J. HU ◽  
Q. X. SONG ◽  
H. L. CAO ◽  
J. YAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Surface Structure ◽  
Single Phase ◽  
Xrd Analysis ◽  
Dc Magnetron Sputtering ◽  
Ceramic Substrates ◽  
Sputtering Deposition ◽  
Post Annealing ◽  
Zero Resistance

Superconducting Tl–Ca–Ba–Cu–O thin films have been prepared by dc magnetron sputtering from a pair of Tl 2 Ca 1 Ba 3 Cu 4 O y bulk targets. The post-annealing films on ZrO 2 ceramic substrates exhibit an onset temperature of about 125 K and zero resistance as high as 101 K. SEM showed a smooth terraced surface structure. The XRD analysis proved that the films were polycrystalline and were not single phase superconducting material.

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