Studies on undoped SnO2 thin film deposited by chemical reactive evaporation method

SnO2 thin films have been grown on Si3N4 substrates and also on Al2O3 sensor substrates with Pt interdigitated electrodes by the pulsed excimer laser deposition (PLD). Palladium doped SnO2 thin film was also prepared by the PLD method combined with the DC sputtering process. The substrate temperature and the oxygen gas pressure were changed from 300 to 500°C and from 100 to 300 mTorr, respectively during deposition. The morphology and structural properties of the prepared thin films have been studied by AFM and XRD. The gas sensing properties of the SnO2 sensor to NO gas was evaluated by measuring electrical resistance between interdigitated electrodes. The highest sensitivity of the undoped SnO2 and Pd doped sensor was found to be around 9.5 and 42, respectively.

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X-Ray Diffraction Study on YBa2Cu3O7-δEpitaxial Thin Film Grown by an Activated Reactive Evaporation Method

Japanese Journal of Applied Physics ◽

10.1143/jjap.27.l1899 ◽

1988 ◽

Vol 27 (Part 2, No. 10) ◽

pp. L1899-L1901 ◽

Cited By ~ 8

Author(s):

Kousei Kamigaki ◽

Hikaru Terauchi ◽

Takahito Terashima ◽

Kenji Iijima ◽

Kazunuki Yamamoto ◽

...

Keyword(s):

Thin Film ◽

Diffraction Study ◽

X Ray Diffraction ◽

X Ray ◽

Evaporation Method ◽

Reactive Evaporation ◽

Activated Reactive Evaporation

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Structural Study on Nd1.85Ce0.15CuO4-δEpitaxial Thin Film Grown by Activated Reactive Evaporation Method

Japanese Journal of Applied Physics ◽

10.1143/jjap.28.l2207 ◽

1989 ◽

Vol 28 (Part 2, No. 12) ◽

pp. L2207-L2209 ◽

Cited By ~ 6

Author(s):

Kousei Kamigaki ◽

Hikaru Terauchi ◽

Takahito Terashima ◽

Kenji Iijima ◽

Kazuto Hirata ◽

...

Keyword(s):

Thin Film ◽

Structural Study ◽

Evaporation Method ◽

Reactive Evaporation ◽

Activated Reactive Evaporation

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Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽

10.3390/electronics10020200 ◽

2021 ◽

Vol 10 (2) ◽

pp. 200

Author(s):

Do Won Kim ◽

Hyeon Joong Kim ◽

Changmin Lee ◽

Kyoungdu Kim ◽

Jin-Hyuk Bae ◽

...

Keyword(s):

Thin Film ◽

Field Effect ◽

Thin Film Transistor ◽

Sol Gel ◽

Precursor Concentration ◽

Sno2 Thin Film ◽

Field Effect Mobility ◽

Si Substrates ◽

Channel Layer ◽

Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

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Enhanced methylene blue removal efficiency of SnO2 thin film using sono-photocatalytic processes

Optical Materials ◽

10.1016/j.optmat.2021.111116 ◽

2021 ◽

Vol 117 ◽

pp. 111116

Author(s):

Mohamed Amine Bezzerrouk ◽

Mohamed Bousmaha ◽

Madani Hassan ◽

Ahmed Akriche ◽

Bachir Kharroubi ◽

...

Keyword(s):

Thin Film ◽

Methylene Blue ◽

Removal Efficiency ◽

Sno2 Thin Film ◽

Methylene Blue Removal ◽

Photocatalytic Processes

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Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Electronics ◽

10.3390/electronics10141629 ◽

2021 ◽

Vol 10 (14) ◽

pp. 1629

Author(s):

Hyeon-Joong Kim ◽

Do-Won Kim ◽

Won-Yong Lee ◽

Sin-Hyung Lee ◽

Jin-Hyuk Bae ◽

...

Keyword(s):

Thin Film ◽

Oxygen Vacancy ◽

Thin Film Transistors ◽

Sol Gel ◽

Sno2 Thin Film ◽

Negative Bias ◽

Semiconductor Films ◽

Saturation Regime ◽

Si Substrates ◽

Ionic Size

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

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Optimization of Fiber Bragg Gratings Inscribed in Thin Films Deposited on D-Shaped Optical Fibers

Sensors ◽

10.3390/s21124056 ◽

2021 ◽

Vol 21 (12) ◽

pp. 4056

Author(s):

José Javier Imas ◽

Carlos R. Zamarreño ◽

Ignacio del Villar ◽

Ignacio R. Matías

Keyword(s):

Thin Film ◽

Film Thickness ◽

Optical Fibers ◽

Flat Surface ◽

Sno2 Thin Film ◽

Thin Film Thickness ◽

A Value ◽

Surrounding Refractive Index ◽

Reflected Power ◽

Fabrication Parameters

A fiber Bragg grating patterned on a SnO2 thin film deposited on the flat surface of a D-shaped polished optical fiber is studied in this work. The fabrication parameters of this structure were optimized to achieve a trade-off among reflected power, full width half maximum (FWHM), sensitivity to the surrounding refractive index (SRI), and figure of merit (FOM). In the first place, the influence of the thin film thickness, the cladding thickness between the core and the flat surface of the D-shaped fiber (neck), and the length of the D-shaped zone over the reflected power and the FWHM were assessed. Reflected peak powers in the range from −2 dB to −10 dB can be easily achieved with FWHM below 100 pm. In the second place, the sensitivity to the SRI, the FWHM, and the FOM were analyzed for variations of the SRI in the 1.33–1.4 range, the neck, and the thin-film thickness. The best sensitivities theoretically achieved for this device are next to 40 nm/RIU, while the best FOM has a value of 114 RIU−1.

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