Effects of implantation energy and annealing temperature on the structural evolution of Ge+-implanted amorphous Si

2005 ◽  
Vol 237 (1-2) ◽  
pp. 384-389 ◽  
Author(s):  
J.H. He ◽  
H.H. Lin ◽  
W.W. Wu ◽  
L.J. Chen
Keyword(s):  
Annealing Temperature ◽  
Structural Evolution ◽  
Implantation Energy ◽  
Amorphous Si

Growth of near noble metal Pd and Pt thin film silicides morphology and structure

1984 ◽  
Vol 42 ◽  
pp. 498-499
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh
Keyword(s):  
Noble Metals ◽  
Annealing Temperature ◽  
Chemical Compounds ◽  
Barrier Properties ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Stable Chemical ◽  
Metal Thickness ◽  
Amorphous Si ◽  
Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

Structural and Optical Properties of the Thermally Stable Amorphous Si1−xBx Alloy.

1993 ◽  
Vol 297 ◽  
Author(s):  
Johan R. A. Carlsson ◽  
X.H. Li ◽  
S.F. Gong ◽  
H.T.G. Hentzell
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Vacuum System ◽  
Structural And Optical Properties ◽  
Microstructural Alterations ◽  
Amorphous Si ◽  
Means Of Transmission ◽  
Quartz Substrates

Thin amorphous Si1−xBx films were co-evaporated onto pre-oxidized (100) Si wafers and quartz substrates, by using a high vacuum system with 2 electron guns. Films were deposited in a composition range from x=0 to x=0.5. In order to study how the structural and optical properties depended on concentration and annealing temperature, heat treatments were carried out at temperatures from 400 up to 1000°C. The films were characterized by means of transmission electron microscopy (TEM), Auger electron spectroscopy (AES), and light absorption spectrophotometry. It is shown that the amorphous Si1−xBx alloy is stable up to 1000°C at certain compositions and that the optical band gap of the alloy increases gradually with increasing annealing temperature up to 700 - 900°C, and then increases rapidly when annealed at a higher temperature by about 0.5 eV. These changes can be associated with microstructural alterations. The relationship between the microstructure and the band gap of the films is discussed.

Optical Activation of Ion Implanted Rare-Earths

1993 ◽  
Vol 301 ◽  
Author(s):  
P.N. Favennec ◽  
H. L'haridon ◽  
D. Moutonnet ◽  
M. Salvi ◽  
M. Gauneau
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Rare Earth Elements ◽  
Rare Earths ◽  
Annealing Temperature ◽  
Implantation Energy ◽  
Optical Activation ◽  
Energy Dose ◽  
The Rare Earth ◽  
Ion Implanted

ABSTRACTA review of the main results concerning the ion implantation of the rare-earth elements is given.To obtain the best optical activation of rare-earths, we attempt to optimize the implantation (energy, dose) and annealing (temperature, duration) conditions. The studied materials are Si, II-VI binaries (ZnTe, CdS), III-V binaries (GaAs, InP), III-V ternaries (GaAlAs, GaInAs) and III-V quaternaries (GaInAsP).

Microstructure Evolution of ZK60M Twin-Roll-Casted Magnesium Alloy during Hot Compression and Annealing

2011 ◽  
Vol 284-286 ◽  
pp. 1502-1505 ◽  
Author(s):  
Ru Ma ◽  
Shou Ren Wang ◽  
Yong Wang ◽  
Li Ying Yang
Keyword(s):  
Magnesium Alloy ◽  
Annealing Temperature ◽  
Static Recrystallization ◽  
Shear Bands ◽  
Structural Evolution ◽  
Electron Back Scatter Diffraction ◽  
Hot Compression ◽  
Ebsd Data ◽  
Different Temperatures ◽  
Twin Roll

The effects of hot compression deformation (300°C/0.1s-1) and annealing on the microstructural evolution of ZK60+0.8Zn (ZK60M) alloys were investigated in the present works. Lots of sub-structures were studded in the shear bands under the deformed conditions, and after annealing, the sub-structures in the shear bands occurred static recrystallization following by the growth of recrystallized grains. With the increase of annealing temperature, amounts of twins decrease while static recrystallization (SRX) grains increase while dislocations rearrange forming sub-grains ultimately induced static recrystallization. And that, the micro structural evolution and grain boundary distribution of the specimen as-deformed and as-annealed at different temperatures were analyzed by electron back scatter diffraction (EBSD) data.

Location of Er atoms with respect to Si nanoclusters in luminescent Er and Si co-implanted silicates

2004 ◽  
Vol 832 ◽  
Author(s):  
P. Pellegrino ◽  
B. Garrido ◽  
J. Arbiol ◽  
C. Garcia ◽  
Y. Lebour ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Soda Lime ◽  
Emission Properties ◽  
The Matrix ◽  
Amorphous Si ◽  
Si Content ◽  
Average Size ◽  
First Time ◽  
Aluminium Silicates ◽  
Pl Quenching

ABSTRACTIn this contribution we explore the structural properties of different silicate glasses c o-implanted with Si and Er ions to various doses, and see how they affect the emission properties around 1540 nm. We have used silica, soda-lime and aluminium silicates as substrates. A multiimplantation scheme provided an uniform Si excess (5 or 15%) background to the subsequently implanted Er atoms. Er peak concentration has been varied between 2×1019 cm−3 to 6×1020 cm−3. The structural analysis of the resulting structures have been performed by means of SIMS, XPS, Raman, and EFTEM.It was found that the best photoluminescence (PL) emission properties are the ones for which a phase separation between the implanted Si and the matrix occurs, even without the formation of nanocrystalline aggregates. Amorphous Si nanoclusters with average size around 3 nm (for high Si content) or below 1nm (for low Si content) have been revealed after the EFTEM analysis. By analysing the layers by EELS and HAADF we have been able to determine the location of Er atoms relative to the Si nanoclusters for the first time to our knowledge. In samples with Er concentration higher than 1020 cm−3, the Er atoms are not randomly dispersed in the matrix. On the contrary, they tend to aggregate, forming large agglomerations mostly in the regions of lower density of Si precipitates. This observation correlates with the appearance of PL quenching at concentrations around 2×1020 cm−3. A suitable tuning of the annealing temperature has been found to drastically reduce this deleterious effect.

Growth of CoSi2/Si Multilayer Structures

1988 ◽  
Vol 116 ◽  
Author(s):  
T. L. Ljni ◽  
P. J. Grunthaner ◽  
F. D. Schowengerdt ◽  
R W. Fathauer ◽  
J. H. Mazur ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Multilayer Structures ◽  
Stoichiometric Ratio ◽  
Critical Temperatures ◽  
Amorphous Si ◽  
Minimum Yield

AbstractGrowth techniques for very thin CoSi2 and Si layers for multilayer applications have been studied. CoSi2 layers without observable pinholes are grown by atechnique utilizing the room-temperature codeposition of Co and Si in stoichiometric ratio with a Si cap, followed by annealing. The crystallinity of the resulting CoSI2 layers annealed at various temperatures was studied by in-situ Rutherford backscattering channeling spectroscopy. The channeling minimum yield decreases with increasing annealing temperature, and drops sharply at ~ 570ºC. Si overgrowth was studied on CoSi2 by a Si template technique, which utilizes the deposition of a thin amorphous Si layer followed by annealing prior to the growth of the bulk of the Si layer. The effect of Si thickness and annealing temperature on Islanding of the Si overlayer was studied by Auger electron spectroscopy. Critical temperatures for a numberof Si thicknesses were identified, above which islanding of these layers occurs.

scholarly journals Oxidation Behavior and Structural Transformation of (CrTaTiVZr)N Coatings

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 415
Author(s):  
Zue-Chin Chang ◽  
Jun-Yang Liang
Keyword(s):  
Annealing Temperature ◽  
Structural Evolution ◽  
Oxide Phase ◽  
Electrical Performance ◽  
Solid Solution Phase ◽  
Face Centered Cubic ◽  
Rutile Tio2 ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Tio2 Phase

(CrTaTiVZr)N coatings were prepared on Si substrates through the reactive magnetron sputtering system to investigate the oxidation behaviors and structural evolution of the coatings at different annealing temperatures in air. The (CrTaTiVZr)N coating had a face-centered cubic structure with an oxidation temperature of up to 300 °C, but its surface changed into the amorphous oxide phase and then into the rutile TiO2 phase when the annealing temperature was increased to 500 °C. The rutile TiO2 phase continued to grow, and an additional solid solution phase of body-centered tetragonal I41/amd was formed at annealing temperatures beyond 600 °C. The high annealing temperature promoted the oxidation to progress along the thickness direction and synergistically developed the porosity. As a result, the hardness and the electrical performance of the coating deteriorated. The hardness decreased from 34.30 GPa to 1.52 GPa, and the electrical resistivity increased from 142 µΩ·cm to 17.5 Ω·cm.

TEM assessment of GaN/AlGaN/TiAlTiAu and GaN/AlGaN/TiAlPdAu ohmic contacts

2001 ◽  
Vol 693 ◽  
Author(s):  
M W Fay ◽  
G Moldovan ◽  
I Harrison ◽  
J C Birbeck ◽  
B T Hughes ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
High Temperatures ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Structural Evolution ◽  
Electrical Performance ◽  
Diffusion Front ◽  
Tem Analysis ◽  
Inclusion Formation

AbstractTiAlTiAu and TiAlPdAu contacts to GaN/AlGaN, rapid thermal annealed at temperatures ranging from 650°C to 950°C, have been investigated using conventional and chemical TEM analysis. Ohmic behaviour was seen for TiAlTiAu contacts annealed at 750°C or higher, but was not observed in TiAlPdAu contacts annealed at up to 950°C. The effect of annealing temperature on the structural evolution of the contact is explained in terms of different extents of interfacial reaction. In particular, the formation of TiN after anneals at high temperatures is required to activate the contact. At anneals of 950°C, TiAlTiAu samples show a structure of TiN grains within an interfacial band, with TiN inclusions into the AlGaN preceded by an Al-Au diffusion front. Inclusion formation and the effect on the contact electrical performance is described.

Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 569-572
Author(s):  
Jens Eriksson ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Raffaella Lo Nigro ◽  
Giuseppe Moschetti ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Structural Evolution ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Specific Contact Resistance ◽  
Specific Contact ◽  
Nanoscale Measurements

This paper reports on the macro- and nanoscale electro-structural evolution, as a function of annealing temperature, of nickel-silicide Ohmic contacts to 3C-SiC, grown on 6H-SiC substrates by a Vapor-Liquid-Solid (VLS) technique. The structural and electrical characterization of the contacts, carried out by combining different techniques, showed a correlation between the annealing temperature and the electrical characteristics in both the macro- and the nanoscale measurements. Increasing the annealing temperature between 600 and 950 °C caused a gradual increase of the uniformity of the nanoscale current-distribution, with an accompanying reduction of the specific contact resistance from 5 x 10-5 to 8.4 x 10-6 Ωcm2. After high temperature annealing (950 °C) the structural composition of the contacts stabilized, as only the Ni2Si phase was detected. A comparison with previous literature findings suggests a superior crystalline quality of the single domain VLS 3C-SiC layers.

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