scholarly journals Oxidation Behavior and Structural Transformation of (CrTaTiVZr)N Coatings

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 415
Author(s):  
Zue-Chin Chang ◽  
Jun-Yang Liang
Keyword(s):  
Annealing Temperature ◽  
Structural Evolution ◽  
Oxide Phase ◽  
Electrical Performance ◽  
Solid Solution Phase ◽  
Face Centered Cubic ◽  
Rutile Tio2 ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Tio2 Phase

(CrTaTiVZr)N coatings were prepared on Si substrates through the reactive magnetron sputtering system to investigate the oxidation behaviors and structural evolution of the coatings at different annealing temperatures in air. The (CrTaTiVZr)N coating had a face-centered cubic structure with an oxidation temperature of up to 300 °C, but its surface changed into the amorphous oxide phase and then into the rutile TiO2 phase when the annealing temperature was increased to 500 °C. The rutile TiO2 phase continued to grow, and an additional solid solution phase of body-centered tetragonal I41/amd was formed at annealing temperatures beyond 600 °C. The high annealing temperature promoted the oxidation to progress along the thickness direction and synergistically developed the porosity. As a result, the hardness and the electrical performance of the coating deteriorated. The hardness decreased from 34.30 GPa to 1.52 GPa, and the electrical resistivity increased from 142 µΩ·cm to 17.5 Ω·cm.

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

TEM assessment of GaN/AlGaN/TiAlTiAu and GaN/AlGaN/TiAlPdAu ohmic contacts

2001 ◽  
Vol 693 ◽  
Author(s):  
M W Fay ◽  
G Moldovan ◽  
I Harrison ◽  
J C Birbeck ◽  
B T Hughes ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
High Temperatures ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Structural Evolution ◽  
Electrical Performance ◽  
Diffusion Front ◽  
Tem Analysis ◽  
Inclusion Formation

AbstractTiAlTiAu and TiAlPdAu contacts to GaN/AlGaN, rapid thermal annealed at temperatures ranging from 650°C to 950°C, have been investigated using conventional and chemical TEM analysis. Ohmic behaviour was seen for TiAlTiAu contacts annealed at 750°C or higher, but was not observed in TiAlPdAu contacts annealed at up to 950°C. The effect of annealing temperature on the structural evolution of the contact is explained in terms of different extents of interfacial reaction. In particular, the formation of TiN after anneals at high temperatures is required to activate the contact. At anneals of 950°C, TiAlTiAu samples show a structure of TiN grains within an interfacial band, with TiN inclusions into the AlGaN preceded by an Al-Au diffusion front. Inclusion formation and the effect on the contact electrical performance is described.

Evolution of Defect Photoluminescence in Annealed N-Rich a-SiNx:H Films

2012 ◽  
Vol 531-532 ◽  
pp. 234-237
Author(s):  
Rui Huang ◽  
Jie Song ◽  
Yan Qing Guo ◽  
Chao Song ◽  
Xiang Wang
Keyword(s):  
Luminescence Intensity ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Very High Frequency ◽  
Pl Spectra ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Vapor Deposition Technique

The N-rich a-SiNx:H films were deposited on Si substrates by very high frequency plasma enhanced chemical vapor deposition technique at a low temperature of 250 °C. Strong blue photoluminescence (PL), which originates from nitrogen dangling bond, can be observed in the as-deposited samples. The dependence of defect PL on annealing temperature was systematically investigated. The PL spectra reveal that the PL peak is almost independent of the annealing temperatures while the luminescence intensity rapidly decreases with the annealing temperature increasing from 400°C to 600°C. However, higher annealing temperatures over 700 °C results in an enhancement of luminescence intensity. Based on the relationship between PL spectra and bonding configurations of the samples, the evolution of defect PL with annealing temperatures was briefly discussed.

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 57-60
Author(s):  
Nicolas Thierry-Jebali ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Mihai Lazar ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Process Condition ◽  
Specific Contact Resistance ◽  
High Doping Level ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
P Type

This work reports on the improvement of ohmic contacts made on heavily p-type doped 4H-SiC epitaxial layer selectively grown by Vapor-Liquid-Solid (VLS) transport. Even before any annealing process, the contact is ohmic. This behavior can be explained by the high doping level of the VLS layer (Al concentration > 1020 cm-3) as characterized by SIMS profiling. Upon variation of annealing temperatures, a minimum value of the Specific Contact Resistance (SCR) down to 1.3x10-6 Ω.cm2 has been obtained for both 500 °C and 800 °C annealing temperature. However, a large variation of the SCR was observed for a same process condition. This variation is mainly attributed to a variation of the Schottky Barrier Height.

Structural Changes of UHV Deposited Titanium Thin Films in Presence of Oxygen Flow and Temperature

2011 ◽  
Vol 110-116 ◽  
pp. 1094-1098
Author(s):  
Haleh Kangarlou ◽  
Mehdi Bahrami Gharahasanloo ◽  
Akbar Abdi Saray ◽  
Reza Mohammadi Gharabagh
Keyword(s):  
Room Temperature ◽  
Structural Changes ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Oxygen Flow ◽  
Glass Substrates ◽  
Annealing Temperatures ◽  
Titanium Thin Films ◽  
Deposition Angle ◽  
Ti Films

Ti films of same thickness, and near normal deposition angle, and same deposition rate were deposited on glass substrates, at room temperature, under UHV conditions. Different annealing temperatures as 393K, 493K and 593K with uniform 8 cm3/sec, oxygen flow, were used for producing titanium oxide layers. Their nanostructures were determined by AFM and XRD methods. Roughness of the films changed due to annealing process. The gettering property of Ti and annealing temperature can play an important role in the nanostructure of the films.

scholarly journals Experimental Investigation on Micro Deep Drawing of Stainless Steel Foils with Different Microstructural Characteristics

2021 ◽  
Vol 34 (1) ◽  
Author(s):  
Jingwei Zhao ◽  
Tao Wang ◽  
Fanghui Jia ◽  
Zhou Li ◽  
Cunlong Zhou ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Deep Drawing ◽  
Annealing Temperature ◽  
Localized Deformation ◽  
Microstructural Characteristics ◽  
Height Profile ◽  
Annealing Temperatures ◽  
Micro Deep Drawing ◽  
Profile Distribution

AbstractIn the present work, austenitic stainless steel (ASS) 304 foils with a thickness of 50 µm were first annealed at temperatures ranging from 700 to 1100 ℃ for 1 h to obtain different microstructural characteristics. Then the effects of microstructural characteristics on the formability of ASS 304 foils and the quality of drawn cups using micro deep drawing (MDD) were studied, and the mechanism involved was discussed. The results show that the as-received ASS 304 foil has a poor formability and cannot be used to form a cup using MDD. Serious wrinkling problem occurs on the drawn cup, and the height profile distribution on the mouth and the symmetry of the drawn cup is quite non-uniform when the annealing temperature is 700 ℃. At annealing temperatures of 900 and 950 ℃, the drawn cups are both characterized with very few wrinkles, and the distribution of height profile, symmetry and mouth thickness are uniform on the mouths of the drawn cups. The wrinkling becomes increasingly significant with a further increase of annealing temperature from 950 to 1100 ℃. The optimal annealing temperatures obtained in this study are 900 and 950 ℃ for reducing the generation of wrinkling, and therefore improving the quality of drawn cups. With non-optimized microstructure, the distribution of the compressive stress in the circumferential direction of the drawn foils becomes inhomogeneous, which is thought to be the cause of the occurrence of localized deformation till wrinkling during MDD.

Amorphous Phase Formation of Titanium Silicide on The 4° off-Axis and on-Axis Si(100) Substrates

1996 ◽  
Vol 427 ◽  
Author(s):  
Hyeongtag Jeon ◽  
Sukjae Lee ◽  
Hwackjoo Lee ◽  
Hyun Ruh
Keyword(s):  
Layer Thickness ◽  
Amorphous Layer ◽  
Film Deposition ◽  
Titanium Silicide ◽  
Atomic Scale ◽  
Phase Identification ◽  
Atomic Steps ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Scale Roughness

AbstractTwo different Si(100) substrates, the 4°off-axis and the on-axis Si(100), were prepared. Ti thin films were deposited in an e-beam evaporation system and the amorphous layers of Ti-silicide were formed at different annealing temperatures. The Si(100) substrates before Ti film deposition were examined with AFM to verify the atomic scale roughness of the initial Si substrates. The amorphous layer was observed by HRTEM and TEM. And the chemical analysis and phase identification were examined by AES and XRD. The Si(100) substrate after HF clean shows the atomic scale microroughness such as atomic steps and pits on the Si surface. The on-axis Si(100) substrate exhibits much rougher surface morphologies than those of the off-axis Si(100). These differences of atomic scale roughnesses of Si substrates result in the difference of the thicknesses of amorphous Ti-silicide layers. The amorphous layer thicknesses on the on-axis exhibit thicker than those of the off-axis Si(100) and these differences inamorphous layer thicknesses became decreased as annealing temperatures increased. These indicate that the role of the atomic scale roughness on the amorphous layer thickness is much significant at low temperatures. In this study, the correlation between the atomic scale roughness and the amorphous layer thickness is discussed in terms of the atomic steps and pits based on the observation with using analysis tools such as AFM, TEM and HRTEM.

Effect of Intercritical Annealing Temperature on Development of Cold Rolled Dual Phase Steel from Q345 Steel

2013 ◽  
Vol 313-314 ◽  
pp. 693-696
Author(s):  
Ji Yuan Liu ◽  
Fu Xian Zhu ◽  
Shi Cheng Ma
Keyword(s):  
Dual Phase Steel ◽  
Annealing Temperature ◽  
Simulation Experiment ◽  
Intercritical Annealing ◽  
Continuous Annealing ◽  
Dual Phase ◽  
Automotive Applications ◽  
Treatment Procedure ◽  
Annealing Temperatures ◽  
Cold Rolled

Cold rolled dual phase steel was developed from Q345 steel by heat treatment procedure for automotive applications. The ultimate tensile strength was improved about 100MPa higher than the traditional cold-rolled Q345 steel in the continuous annealing simulation experiment. The microstructure presented varied characteristics in different intercritical annealing temperatures; mechanical properties were changed correspondingly as well. The chief discussions are focus on the recrystallization, hardenability of austenite and martensite transformation in the experiment.

Optical Waveguide Formation by Ion Implantation of Ti or Ag

1988 ◽  
Vol 100 ◽  
Author(s):  
D. B. Poker ◽  
D. K. Thomas
Keyword(s):  
Ion Implantation ◽  
Concentration Profile ◽  
Optical Waveguides ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Effective Means ◽  
Complete Removal ◽  
Solid Phase Epitaxy ◽  
Annealing Temperatures ◽  
Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

Effects of Annealing Temperature on Morphology and Dielectric Property of BiFeO3 Films

2012 ◽  
Vol 512-515 ◽  
pp. 1736-1739
Author(s):  
Li Li Zhang ◽  
Guo Qiang Tan ◽  
Meng Cheng ◽  
Hui Jun Ren ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Raw Materials ◽  
Sol Gel ◽  
Frequency Range ◽  
Annealing Temperatures ◽  
Pure Phase ◽  
Lower Loss

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.

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