CFD modelling of a novel hydrodynamic suspension polishing process for ultra-smooth surface with low residual stress

2017 ◽  
Vol 317 ◽  
pp. 320-328 ◽  
Author(s):  
Huan Qi ◽  
Zhong Xie ◽  
Tao Hong ◽  
Yang-yu Wang ◽  
Fan-zhi Kong ◽  
...  
2013 ◽  
Vol 770 ◽  
pp. 433-436
Author(s):  
Xin Li Tian ◽  
Jian Quan Wang ◽  
Bao Guo Zhang ◽  
Peng Xiao Wang

Fracture strength is one of the key mechanics performances for engineering ceramics products, greatly influenced by the microscopic topography and residual stress field of ground surface. In this work, several testing equipments, such as the metallurgical microscope, surface profiler and X ray residual stress tester were introduced to investigate the relationships between microscopic topography, surface roughness, residual stress and fracture strength of ground ceramics, after the surface grinding and mechanical polishing. The experimental results show that a smoother machined surface with low roughness and residual stress is obtained through polishing with absolute alcohol for 20 minutes; the fracture strength of Si3N4SiC and Al2O3 are increased by 6.64%8.18% and 6.58% respectively, comparing to the ceramics without polishing; the surface stress concentration and residual tensile stress of polished ceramics are both reduced after an appropriate time of polishing process, which causes a certain improvement of ground fracture strength.


2006 ◽  
Vol 315-316 ◽  
pp. 852-855 ◽  
Author(s):  
Cheng Yong Wang ◽  
C. Chen ◽  
Yue Xian Song

In order to achieve the smooth surface of diamond, several kinds of mixture oxidizing agents have been used to polish the single crystal diamond by a designed polishing apparatus. The existing of graphite and amorphous carbon has been found in the surface of diamond after polishing. The mechanochemical actions of oxidizing agents and the polishing iron plate have been proved. The mixture of oxidizing agents can decrease the polishing temperature so that the super-smooth surface of single crystal diamond can be achieved at lower temperature. The method provided is benefit not only to simplify polishing device and control the polishing process, but also to improve the removal rate and surface roughness.


2006 ◽  
Vol 532-533 ◽  
pp. 472-475 ◽  
Author(s):  
Wei Li ◽  
Xiao Dong Hu ◽  
Yang Fu Jin ◽  
Gang Xiang Hu ◽  
Xiao Zhen Hu

Double sided polishing process has become a main machining method for silicon wafer finishing process, but it is difficult to get ultra-smooth surface with the very stringent machining conditions. In this paper, the mechanism of ultra-smooth surface machining process was studied, the main parameters affecting the surface quality of silicon wafer, such as the polishing pad and carrier rotation speed, polishing press, polishing slurries etc. , were discussed and optimized, then ultra-smooth surface of silicon wafer with Ra 0.4nm has been obtained based on the above study. A new double sided polishing machine with computer control system equipped with a digital controlled press valve was developed, and the ultra-smooth machining process of silicon wafer was established in this paper.


2019 ◽  
Vol 103 (5-8) ◽  
pp. 2495-2513 ◽  
Author(s):  
Dongbo Wu ◽  
Hui Wang ◽  
Kaiyao Zhang ◽  
Xiaojun Lin

2013 ◽  
Vol 589-590 ◽  
pp. 447-450 ◽  
Author(s):  
Wen Hua Zhou ◽  
Wei Feng Yao ◽  
Ming Feng ◽  
Bing Hai Lv ◽  
Qian Fa Deng

The surface quality of cylindrical rollers has a great influence on the working life of rolling bearings. In the paper, double-side lapping machine and flannelette pads are applied to polish the cylindrical surface of rollers. After 20 min polishing, rollers with smooth surface are obtained and the roundness of the rollers have a improvement of about 0.3 μm, which means that the polishing process based on double-side lapping method can effectively improve the surface quality and geometric accuracy of cylindrical rollers.


2013 ◽  
Vol 797 ◽  
pp. 135-139 ◽  
Author(s):  
Lei Sun ◽  
Wei Gang Guo ◽  
Ju Long Yuan ◽  
Qian Fa Deng ◽  
Ming Feng ◽  
...  

The Quartz substrates are widely used in various fields, and the requirement for the surface quality of quartz substrate is higher than ever before. This paper focuses on the ultra-precision polishing technology for the quartz substrates, and the material removal mechanism in the process of ultra-precision polishing is discussed. The results showed that an extremely smooth surface of quartz substrate was obtained in the ultra-precision polishing process, and the best surface roughness reached Ra 0.82nm. Meanwhile, the thickness can be controlled very well.


2013 ◽  
Vol 768-769 ◽  
pp. 492-499 ◽  
Author(s):  
Yoshihisa Sakaida ◽  
Hajime Yoshida ◽  
Shigeki Yashiro ◽  
Toshiyuki Murai

2021 ◽  
Vol 127 (12) ◽  
Author(s):  
Pascal Birckigt ◽  
Kevin Grabowski ◽  
Gilbert Leibeling ◽  
Thomas Flügel-Paul ◽  
Martin Heusinger ◽  
...  

AbstractDefect free direct bonding of rigid and large area glass samples, such as prisms, becomes increasingly important for the manufacturing of modern optical and optomechanical components. Typically, in order to apply a static load during the annealing step, specialized heat-resistant pressure mountings are required. This makes manufacturing effortful and cost-intensive. In this paper, we present plasma activated bonding experiments conducted on fused silica plates where residual stress has been introduced prior to the contacting step and where annealing is performed with and without a static load. We find that in case of a sufficiently smooth surface, bonding strength is insensitive towards residual stress or static load, or more precisely, towards the interface stress. Furthermore, the residual Fresnel reflection losses of the realized bonding interface were optically measured and they amount to only $$10^{-6}$$ 10 - 6 . We propose that a consideration of the change in Gibbs free energy, dG, allows qualitatively predicting the resulting bonding strength and its spatial distribution, where dG is determined by surface energy and interface stress. At the end of this article, conceivable applications are discussed.


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