Optical and microstructural characterization of amorphous-like Al 2 O 3 , SnO 2 and TiO 2 thin layers deposited using a pulse gas injection magnetron sputtering technique

2017 ◽  
Vol 632 ◽  
pp. 112-118 ◽  
Author(s):  
L. Skowronski ◽  
R. Szczesny ◽  
K. Zdunek
Coatings ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1324
Author(s):  
Emilio Márquez ◽  
Juan J. Ruíz-Pérez ◽  
Manuel Ballester ◽  
Almudena P. Márquez ◽  
Eduardo Blanco ◽  
...  

Several, nearly-1-µm-thick, pure, unhydrogenated amorphous-silicon (a-Si) thin layers were grown at high rates by non-equilibrium rf-magnetron Ar-plasma sputtering (RFMS) onto room-temperature low-cost glass substrates. A new approach is employed for the optical characterization of the thin-layer samples, which is based on some new formulae for the normal-incidence transmission of such a samples and on the adoption of the inverse-synthesis method, by using a devised Matlab GUI environment. The so-far existing limiting value of the thickness-non-uniformity parameter, Δd, when optically characterizing wedge-shaped layers, has been suppressed with the introduction of the appropriate corrections in the expression of transmittance. The optical responses of the H-free RFMS-a-Si thin films investigated, were successfully parameterized using a single, Kramers–Krönig (KK)-consistent, Tauc–Lorentz oscillator model, with the inclusion in the model of the Urbach tail (TLUC), in the present case of non-hydrogenated a-Si films. We have also employed the Wemple–DiDomenico (WDD) single-oscillator model to calculate the two WDD dispersion parameters, dispersion energy, Ed, and oscillator energy, Eso. The amorphous-to-crystalline mass-density ratio in the expression for Ed suggested by Wemple and DiDomenico is the key factor in understanding the refractive index behavior of the a-Si layers under study. The value of the porosity for the specific rf-magnetron sputtering deposition conditions employed in this work, with an Ar-pressure of ~4.4 Pa, is found to be approximately 21%. Additionally, it must be concluded that the adopted TLUC parameterization is highly accurate for the evaluation of the UV/visible/NIR transmittance measurements, on the H-free a-Si investigated. Finally, the performed experiments are needed to have more confidence of quick and accurate optical-characterizations techniques, in order to find new applications of a-Si layers in optics and optoelectronics.


2014 ◽  
Vol 21 (1) ◽  
pp. 132-139 ◽  
Author(s):  
Sónia Simões ◽  
Filomena Viana ◽  
Ana S. Ramos ◽  
Maria T. Vieira ◽  
Manuel F. Vieira

AbstractDiffusion bonding of TiAl alloys can be enhanced by the use of reactive nanolayer thin films as interlayers. Using these interlayers, it is possible to reduce the conventional bonding conditions (temperature, time, and pressure) and obtain sound and reliable joints. The microstructural characterization of the diffusion bond interfaces is a fundamental step toward understanding and identifying the bonding mechanisms and relating them to the strength of the joints. The interface of TiAl samples joined using Ni/Al nanolayers was characterized by transmission electron microscopy and scanning transmission electron microscopy. Microstructural characterization of the bond revealed that the interfaces consist of several thin layers of different composition and grain size (nanometric and micrometric). The bonding temperature (800, 900, or 1,000°C) determines the grain size and thickness of the layers present at the interface. Phase identification by high-resolution transmission electron microscopy combined with fast Fourier transform and electron energy-loss spectroscopy analyses reveals the presence of several intermetallic compounds: AlTiNi, NiAl, and Al2TiNi. For bonds produced at 800 and 900°C, nanometric grains of Ti were detected at the center of the interface.


1991 ◽  
Vol 6 (2) ◽  
pp. 252-263 ◽  
Author(s):  
M. Ece ◽  
R.W. Vook ◽  
John P. Allen

Thin films of Y1Ba2Cu3O7−x have been prepared on MgO, SrTiO3/Al2O3, and Al2O3 substrates by rf magnetron sputtering. A buffer layer of SrTiO3 was deposited on Al2O3 by flash evaporation. The as-deposited films on MgO and SrTiO


Materials ◽  
2017 ◽  
Vol 10 (2) ◽  
pp. 200 ◽  
Author(s):  
A. Faudoa-Arzate ◽  
A. Arteaga-Durán ◽  
R.J. Saenz-Hernández ◽  
M.E. Botello-Zubiate ◽  
P.R. Realyvazquez-Guevara ◽  
...  

2018 ◽  
Vol 25 (1) ◽  
pp. 192-195 ◽  
Author(s):  
Sónia Simões ◽  
Ana Soares ◽  
Carlos José Tavares ◽  
Aníbal Guedes

AbstractThe aim of this study is to evaluate the potential use of titanium foil coated with sputtered silver and copper films as a novel brazing filler for joining TiAl alloys. For this purpose, a detailed microstructural characterization of the resulting brazing interfaces was carried out. The development of brazing fillers that allow the joining of TiAl alloys without compromising the service temperature is a fruitful prospect. Brazing experiments were performed in a vacuum at 900, 950, and 980°C, with a dwell time of 30 min. Microstructural characterization reveals that brazing joints can be obtained successfully at 950 and 980°C. The interface consists of a large central region of α-Ti with an amount of Al and Ti–Ag compound and thin layers, mainly composed of intermetallic compounds, formed close to the base material. A novel brazing filler consisting of Ti foil coated with sputtered Ag and Cu films inhibits the extensive formation of soft (Ag) zones or coarse brittle Ti–Al–(Cu,Ni) particles. Hence, the need for post-brazing heat treatments for the joining of TiAl alloys was avoided.


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