Redistribution and precipitation of dopant on thermal annealing of bismuth implanted silicon

1983 ◽  
Vol 41 ◽  
pp. 126-127
Author(s):  
S. J. Pennycook ◽  
J. Narayan ◽  
O. W. Holland
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Cross Section ◽  
Solid Solutions ◽  
Annealing Temperature ◽  
High Dose ◽  
Extended Defects ◽  
High Concentration ◽  
Equilibrium Solubility ◽  
Original Surface

Ion implantation above a certain dose leads to the formation of amorphous layers, which if recrystallized under interface-controlled growth at 450-600°C, result in solid solutions far exceeding the equilibrium solubility limits. In this investigation, we have annealed high-dose implanted specimens at 1000°C for one hour to study the redistribution and precipitation of dopant due to the presence of extended defects.Figure 1 shows a cross section TEM image taken near the [01] Si pole of (100)Si implanted with 209Bi+ (250 KeV, 5 x 1015 cm−2) and annealed (1000°C, 1 hr). As well as a band of precipitates typically 5 nm in size centered at a depth of 100 nm there are some much larger precipitates (28 nm in size) at the original surface of the silicon. These show a curved meniscus protruding out of the surface since the bismuth is liquid at the annealing temperature. These precipitates are located on twins suggesting that the dopant has diffused along the twin boundaries from the band of high concentration to the surface.

Supersaturated P-Type Polycrystaline Films Produced by Rapid Thermal Annealing of High Dose Boron Ion Implants for Interconnects and Shallow Junction Diffusion Sources

1990 ◽  
Vol 182 ◽  
Author(s):  
B. Raicu ◽  
M.I. Current ◽  
W.A. Keenan ◽  
D. Mordo ◽  
R. Brennan ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Thermal Annealing ◽  
Cross Section ◽  
Rapid Thermal Annealing ◽  
Single Crystal Silicon ◽  
High Dose ◽  
Crystal Silicon ◽  
Polysilicon Films ◽  
P Type

AbstractHighly conductive p+-polysilicon films were fabricated over Si(100) and SiO2 surfaces using high-dose ion implantation and rapid thermal annealing. Resistivities close to that of single crystal silicon were achieved. These films were characterized by a variety of electrical and optical techniques as well as SIMS and cross-section TEM.

Evolution of Photoluminescence Mechanisms of Si+-Implanted SiO2 Films with Thermal Annealing

2008 ◽  
Vol 8 (7) ◽  
pp. 3555-3560 ◽  
Author(s):  
L. Ding ◽  
T. P. Chen ◽  
Y. Liu ◽  
C. Y. Ng ◽  
M. Yang ◽  
...  
Keyword(s):  
Band Structure ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Energy Gap ◽  
The Other ◽  
Extended Defects ◽  
Band Transition ◽  
Luminescent Centers ◽  
Subsequent Thermal Annealing ◽  
Si Ion Implantation

The information of band structure of silicon nanocrystal (nc-Si) embedded in SiO2 thin films synthesized by Si ion implantation and subsequent thermal annealing at various temperatures has been obtained from spectroscopy ellipsometric (SE) analysis. The indirect band structure and the energy gap of the nc-Si are not affected by the annealing. In contrast, the photoluminescence (PL) spectra show a continuous evolution with the annealing. Six PL bands located at 415, 460, 520, 630, 760, and 845 nm, respectively, have been observed depending on the annealing temperature. The annealing at 1100 °C yields the strongest PL band at 760 nm (∼1.63 eV) with the intensity much higher than that of all the other PL bands. Based on the knowledge of the band structure, the 760 nm-PL band could be attributed to the indirect band-to-band transition of the nc-Si assisted by the Si—O vibration of the nc-Si/SiO2 interface with the stretching frequency of ∼1083 cm−1 (&sim0.13 eV). On the other hand, the first four PL bands mentioned above could originate from different extended defects in the oxide matrix, while the 845-nm PL band could be related to the interface luminescent centers.

keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon

1994 ◽  
Vol 354 ◽  
Author(s):  
J.K.N. Lindner ◽  
A. Frohnwieser ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Ion Implantation ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Ion Beam ◽  
High Dose ◽  
Layer Formation ◽  
Substrate Orientation ◽  
Ion Beam Synthesis ◽  
Buried Layers ◽  
Precipitate Layer

AbstractHomogenous, epitaxial buried layers of 3C-SÍC have been formed in Si(100) and Si(lll) by ion beam synthesis (IBS) using 180 keV high dose C ion implantation. It is shown that an annealing temperature of 1250 °C and annealing times of 5 to 10 h are sufficient to achieve well-defined Si/SiC/Si layer systems with abrupt interfaces. The influence of dose, annealing time and temperature on the layer formation is studied. The favourable dose is observed to be dependent on the substrate orientation. IBS using 0.8 MeV C ions resulted in a buried SiC precipitate layer of variable composition.

Incorporation of Highly Concentrated Iron Impurities in InP by High Temperature Ion Implantation

2002 ◽  
Vol 719 ◽  
Author(s):  
T. Cesca ◽  
A. Gasparotto ◽  
N. El Habra ◽  
A. Coati ◽  
B. Fraboni ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Temperature ◽  
Deep Level ◽  
Thermal Treatments ◽  
High Concentration ◽  
X Ray ◽  
Lattice Position ◽  
Defect Reactions ◽  
High Fraction ◽  
Substitutional Fe

AbstractIron was introduced in InP by ion implantation with the aim of obtaining a high concentration of substitutional, electrically active, deep level impurities. A substrate temperature higher than 200 °C was maintained during implantation in order to reduce damage accumulation and Fe defect reactions. The lattice position of the implanted Fe atoms and its modification during annealing treatments was studied by means of Proton Induced X-ray Emission (PIXE) in channeling conditions and correlated with the ion induced damage measured by different techniques. The results show that a high fraction of substitutional Fe atoms is present after the implantation. This fraction is progressively reduced during thermal treatments by increasing the annealing temperature, with the formation of inactive Fe aggregates, probably in the form of small Fe-P complexes.

scholarly journals The microstructure of Si surface layers after plasma-immersion He+ion implantation and subsequent thermal annealing

2017 ◽  
Vol 50 (2) ◽  
pp. 539-546 ◽  
Author(s):  
Andrey Lomov ◽  
Kirill Shcherbachev ◽  
Yurii Chesnokov ◽  
Dmitry Kiselev
Keyword(s):  
High Resolution ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Structural Changes ◽  
Layer Structure ◽  
Characteristic Size ◽  
High Dose ◽  
X Ray ◽  
P Type ◽  
Subsequent Thermal Annealing

The structural changes in the surface layer of p-type Cz-Si(001) samples after high-dose low-energy (2 keV) He+plasma-immersion ion implantation and subsequent thermal annealing were studied using a set of complementary methods: high-resolution X-ray reflectometry, high-resolution X-ray diffraction, transmission electron microscopy and atomic force microscopy. The formation of a three-layer structure was observed (an amorphous a-SiOxlayer at the surface, an amorphous a-Si layer and a heavily damaged tensile-strained crystalline c-Si layer), which remained after annealing. Helium-filled bubbles were observed in the as-implanted sample. The influence of annealing on the evolution of the three-layer structure and the bubbles is considered. The bubbles are shown to grow after annealing. Their characteristic size is determined to be in the range of 5–20 nm. Large helium-filled bubbles are located in the amorphous a-Si layer. Small bubbles form inside the damaged crystalline Si layer. These bubbles are a major source of tensile strain in the c-Si layer.

SIMS Investigation of Gex(4H-SiC)1-x Solid Solutions Synthesized by Ge-Ion Implantation up to x=0.2

2009 ◽  
Vol 615-617 ◽  
pp. 465-468
Author(s):  
Hervé Peyre ◽  
Jörg Pezoldt ◽  
M. Voelskow ◽  
Wolfgang Skorupa ◽  
Jean Camassel
Keyword(s):  
Ion Implantation ◽  
Solid Solutions ◽  
Depth Distribution ◽  
High Dose ◽  
Measurement Results ◽  
Very High

A detailed investigation of the Ge concentration in implanted samples has been carried out by SIMS and the effects affecting the depth distribution and measurement results have been determined. It is found that the MCs+ SIMS technique is best suited to investigate Gex(4H-SiC)1-x solid solutions up to x=0.2, while the O2+ SIMS configuration is limited to x=0.1. The Ge concentrations obtained by SIMS are very close to the nominal values. On the opposite, performing a comparison with previous RBS data, we find that the RBS values are systematically underestimated by ~30%. Finally, at very high dose, we find that some of the implanted species are lost by recoil and sputtering effects.

scholarly journals Nanocrystals and Quantum Dots Formed by High-Dose Ion Implantation

1995 ◽  
Vol 396 ◽  
Author(s):  
C.W. White ◽  
J. D. Budai ◽  
J. G. Zhu ◽  
S. P. Withrow ◽  
D. M. Hembree ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Quantum Confinement ◽  
Compound Semiconductors ◽  
High Dose ◽  
Confinement Effects ◽  
Quantum Confinement Effects ◽  
Wide Range ◽  
Elemental Semiconductors

AbstractIon implantation and thermal annealing have been used to produce a wide range of nanocrystals and quantum dots in amorphous (SiO2) and crystalline (AI2O3) matrices. Nanocrystals of metals (Au), elemental semiconductors (Si and Ge), and even compound semiconductors (SiGe, CdSe, CdS) have been produced. In amophous matrices, the nanocrystals are randomly oriented, but in crystalline matrices they are three dimensionally aligned. Evidence for photoluminescence and quantum confinement effects are presented.

Relaxation Behavior of Metastable As and P Concentrations in Si After Pulsed and CW Laser Annealing

1983 ◽  
Vol 23 ◽  
Author(s):  
J. Goetzlich ◽  
P.H. Tsien ◽  
H. Ryssel
Keyword(s):  
Ion Implantation ◽  
Time Dependence ◽  
Carrier Concentration ◽  
Laser Irradiation ◽  
Solid Solutions ◽  
Laser Annealing ◽  
High Dose ◽  
Cw Laser ◽  
Different Temperatures ◽  
Removal Technique

ABSTRACTMetastable solid solutions of arsenic and phosphorus atoms were created by high-dose ion implantation in silicon, followed by annealing either with pulsed (Nd:YAG) or CW (CO2;) laser irradiation. The relaxation of these supersaturated layers was investigated by thermal post-treatment at temperatures between 600 and 1000°C. By measuring the time dependence of the sheet carrier concentration, the time constant and the activation energies for the relaxation of the electrically-active As and P atoms were investigated. In addition, the equilibrium carrier concentrations at different temperatures were obtained by Halleffect measurements in connection with a layer-removal technique.

Hydrogen Passivation of Si Nanocrystals in Silica

2000 ◽  
Vol 650 ◽  
Author(s):  
Stephanie Cheylan ◽  
Robert G. Elliman
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Silicon Nanocrystals ◽  
Emission Spectra ◽  
Red Shift ◽  
High Dose ◽  
Hydrogen Passivation ◽  
High Fluence ◽  
Si Nanocrystals ◽  
Pl Emission

ABSTRACTThis paper explores the effect of hydrogen on the luminescence properties of silicon nanocrystals formed in silica by high-dose ion-implantation and thermal annealing. For samples implanted to low fluence (small nanocrystals), passivation is shown to result in a uniform enhancement of the PL emission for all wavelengths. However, for samples implanted to high fluence, preferential enhancement of the emission from larger nanocrystals is evident, resulting in a red-shift of emission spectra. Both the intensity enhancement and the red-shift are shown to be reversible, with spectra returning to their pre-passivation form when H is removed from the samples by annealing. The luminescence lifetime is also shown to increase after passivation, confirming that defect-containing nanocrystals luminesce.

Structure and Lattice Location of Ge Implanted 4H-SiC

2008 ◽  
Vol 600-603 ◽  
pp. 623-626
Author(s):  
Thomas Kups ◽  
Katja Tonisch ◽  
M. Voelskow ◽  
Wolfgang Skorupa ◽  
Alexander Konkin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Solutions ◽  
Lattice Location ◽  
Transmission Electron

Pseudomorphic 4H-(Si1-xC1-y)Gex+y solid solutions were formed by ion implantation at 600°C and rapid thermal annealing at implanted Ge concentrations below 10%. At higher implantation doses followed by annealing 3C-SiC inclusion and SiGe precipitates are formed. Transmission electron microscopy investigations accompanied with “atomic location by channeling enhanced microanalysis” of the annealed samples revealed an increasing incorporation of Ge on Si lattice sites.

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