FIB system for TEM specimen preparation and its application

1996 ◽  
Vol 54 ◽  
pp. 1032-1033
Author(s):  
T. Yaguchi ◽  
T. Kamino ◽  
H. Koike ◽  
T. Ishitani ◽  
Y. Kitano
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Specific Area ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Beam Diameter ◽  
Positional Accuracy ◽  
Preparation Methods ◽  
Specimen Holder ◽  
Transmission Electron

The transmission electron microscope(TEM) is one of the most powerful instrument in materials characterization, and various TEM specimen preparation methods have been developed. It is known that Ar-etching method is most widely applied in the studies of high technology materials. However, it is time-consuming when a specific area is desired for examination. Because it is necessary to iterate through Ar-ion etching and TEM examination until the desired information is obtained.There is a great demand on a new specimen preparation technique that has high positional accuracy, reliability, and throughput.Focused ion beam (FIB) milling has been proposed as a solution to the above requirements. We have developed the FIB system (FB-2000) for SEM/TEM specimen preparation. An external view of the system is shown in Fig.l. The system is designed to use a compatible specimen holder (Fig.2) which allows both FIB milling and TEM observation without re-mounting the specimen. The instrument has maximum accelerating voltage of 30kV and a minimum beam diameter of lOnm. The FIB current density of 15A/cm2 is available.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

TEM FIB Lift-Out of Mount Saint Helens Volcanic Ash

1999 ◽  
Vol 5 (S2) ◽  
pp. 908-909
Author(s):  
J.L. Drown-MacDonald ◽  
B.I. Prenitzer ◽  
T.L. Shofner ◽  
L.A. Giannuzzi
Keyword(s):  
Cross Sections ◽  
Volcanic Ash ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron ◽  
Silver Paint

Focused Ion Beam (FIB) specimen preparation for both scanning and transmission electron microscopy (SEM and TEM respectively) has seen an increase in usage over the past few years. The advantage to the FIB is that site specific cross sections (or plan view sections) may be fabricated quickly and reproducibly from numerous types of materials using a finely focused beam of Ga+ ions [1,2]. It was demonstrated by Prenitzer et al. that TEM specimens may be acquired from individual Zn powder particles by employing the FIB LO specimen preparation technique [3]. In this paper, we use the FIB LO technique to prepare TEM specimens from Mount Saint Helens volcanic ash.Volcanic ash from Mount Saint Helens was obtained at the Microscopy and Microanalysis 1998 meeting in Atlanta. TEM analysis of the ash was performed using the FIB lift out technique [1]. Ash powders were dusted onto an SEM sample stud that had been coated with silver paint.

Site Specific TEM Specimen Preparation using an FIB/TEM System

2000 ◽  
Vol 6 (S2) ◽  
pp. 510-511 ◽  
Author(s):  
T. Kamino ◽  
T. Yaguchi ◽  
T. Ohnishi ◽  
K. Umemura ◽  
S. Tomimatsu
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Site Specific ◽  
Specimen Holder ◽  
Transmission Electron ◽  
Wide Range ◽  
Scanning Transmission

The focused ion beam(FIB) technique, developed for the microelectronics industry has become a major method for site specific transmission electron microscopy(TEM) specimen preparation in a wide range of materials[l]. The FIB lift-out technique has improved the specimen preparation procedures by removing complicated initial fabrication required prior to the FIB milling[2]. However, conventional FIB techniques are still having increased difficulty in meeting failure analysis needs from high technology industries such as microelectronics.We have developed a site specific TEM specimen preparation method using a combination of an FIB instrument and an intermediate voltage TEM equipped with a scanning attachment [3]. In this method, the specimen is mounted on an FIB-TEM compatible specimen holder, so that localization of the specific site can be carried out in the FIB and TEM using the same holder. The scanning electron imaging mode may be used to observe surface structures of the milled area, and the scanning transmission electron microscopy(STEM) mode may be used to observe structures inside of the milled surface.

Revisiting the FIB TEM Lift-Out Specimen Preparation Technique

2000 ◽  
Vol 6 (S2) ◽  
pp. 508-509
Author(s):  
L. A. Giannuzzi ◽  
F. A. Stevie
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Subsequent Development ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Tem Analysis ◽  
Plan View ◽  
Geological Materials ◽  
Transmission Electron ◽  
Primary Advantage

In recent years, the focused ion beam (FIB) instrument has developed into a mainstay tool for the production of specimens for both scanning and transmission electron microscopy ((S)TEM). The inception and subsequent development of the FIB TEM lift-out (LO) technique has enabled electron transparent membranes of generally uniform thickness to be produced for TEM analysis. In general, the primary advantage of the FIB is that site specific sections may be fabricated quickly (e.g., < 1 hour) and reproducibly. Specifically, the FIB LO technique has been used extensively in our laboratories to produce on the order of a thousand Si-based specimens per year and hundreds of other specimens per year that have included metals, ceramics, composites, biological materials, geological materials, polymers, particles, and fibers, prepared in cross-section, plan view, and from fracture surfaces.

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

Focused Ion Beam Analysis of Low-K Dielectrics

2000 ◽  
Author(s):  
H. J. Bender ◽  
R. A. Donaton
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Step ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Low K ◽  
Scanning Electron

Abstract The characteristics of an organic low-k dielectric during investigation by focused ion beam (FIB) are discussed for the different FIB application modes: cross-section imaging, specimen preparation for transmission electron microscopy, and via milling for device modification. It is shown that the material is more stable under the ion beam than under the electron beam in the scanning electron microscope (SEM) or in the transmission electron microscope (TEM). The milling of the material by H2O vapor assistance is strongly enhanced. Also by applying XeF2 etching an enhanced milling rate can be obtained so that both the polymer layer and the intermediate oxides can be etched in a single step.

A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

2002 ◽  
Author(s):  
Chin Kai Liu ◽  
Chi Jen. Chen ◽  
Jeh Yan.Chiou ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Sensitive Issue ◽  
Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

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